Cerium oxide based resistive random access memory devices

Resistive Random Access Memory (RRAM) is an emerging technology of non-volatile memory (NVM). Although the observation of metal oxide that can undergo an abrupt insulator-metal transition into a conductive state has been known for over 40 years, researchers started investigating those materials for memory applications in late 1990s. It has been considered as the next generation memory technology to replace current flash memory because RRAM has demonstrated feasible switching characteristics and potential to build high density arrays and also RRAM is also compatible with contemporary CMOS processes, which means RRAM can be integrated into current CMOS chips. While the structure of RRAM is a simple metal-insulator-metal (MIM) device, there are numerous materials that exhibit resistive switching. The switching behavior is not only dependent on the switching layer materials but also dependent on the choice of metal electrodes and their interfacial properties. Many metal oxides such as hafnium oxide, titanium oxide, aluminum oxide, nickel oxide (NiO), tantalum oxide and etc. have been studied in details; however, some materials are unexplored such as cerium oxide. In addition to nonvolatile storage applications, RRAM is considered as one of essential elements for advancing neuromorphic computing because of its analog switching and retention characteristics. This thesis investigated CeO[subscript x]-based RRAMs, from its fundamental device characteristics to neuromorphic applications.Electrical and Computer Engineerin

Reliability-aware memory design using advanced reconfiguration mechanisms

Fast and Complex Data Memory systems has become a necessity in modern computational units in today's integrated circuits. These memory systems are integrated in form of large embedded memory for data manipulation and storage. This goal has been achieved by the aggressive scaling of transistor dimensions to few nanometer (nm) sizes, though; such a progress comes with a drawback, making it critical to obtain high yields of the chips. Process variability, due to manufacturing imperfections, along with temporal aging, mainly induced by higher electric fields and temperature, are two of the more significant threats that can no longer be ignored in nano-scale embedded memory circuits, and can have high impact on their robustness. Static Random Access Memory (SRAM) is one of the most used embedded memories; generally implemented with the smallest device dimensions and therefore its robustness can be highly important in nanometer domain design paradigm. Their reliable operation needs to be considered and achieved both in cell and also in architectural SRAM array design. Recently, and with the approach to near/below 10nm design generations, novel non-FET devices such as Memristors are attracting high attention as a possible candidate to replace the conventional memory technologies. In spite of their favorable characteristics such as being low power and highly scalable, they also suffer with reliability challenges, such as process variability and endurance degradation, which needs to be mitigated at device and architectural level. This thesis work tackles such problem of reliability concerns in memories by utilizing advanced reconfiguration techniques. In both SRAM arrays and Memristive crossbar memories novel reconfiguration strategies are considered and analyzed, which can extend the memory lifetime. These techniques include monitoring circuits to check the reliability status of the memory units, and architectural implementations in order to reconfigure the memory system to a more reliable configuration before a fail happens.Actualmente, el diseño de sistemas de memoria en circuitos integrados busca continuamente que sean más rápidos y complejos, lo cual se ha vuelto de gran necesidad para las unidades de computación modernas. Estos sistemas de memoria están integrados en forma de memoria embebida para una mejor manipulación de los datos y de su almacenamiento. Dicho objetivo ha sido conseguido gracias al agresivo escalado de las dimensiones del transistor, el cual está llegando a las dimensiones nanométricas. Ahora bien, tal progreso ha conllevado el inconveniente de una menor fiabilidad, dado que ha sido altamente difícil obtener elevados rendimientos de los chips. La variabilidad de proceso - debido a las imperfecciones de fabricación - junto con la degradación de los dispositivos - principalmente inducido por el elevado campo eléctrico y altas temperaturas - son dos de las más relevantes amenazas que no pueden ni deben ser ignoradas por más tiempo en los circuitos embebidos de memoria, echo que puede tener un elevado impacto en su robusteza final. Static Random Access Memory (SRAM) es una de las celdas de memoria más utilizadas en la actualidad. Generalmente, estas celdas son implementadas con las menores dimensiones de dispositivos, lo que conlleva que el estudio de su robusteza es de gran relevancia en el actual paradigma de diseño en el rango nanométrico. La fiabilidad de sus operaciones necesita ser considerada y conseguida tanto a nivel de celda de memoria como en el diseño de arquitecturas complejas basadas en celdas de memoria SRAM. Actualmente, con el diseño de sistemas basados en dispositivos de 10nm, dispositivos nuevos no-FET tales como los memristores están atrayendo una elevada atención como posibles candidatos para reemplazar las actuales tecnologías de memorias convencionales. A pesar de sus características favorables, tales como el bajo consumo como la alta escabilidad, ellos también padecen de relevantes retos de fiabilidad, como son la variabilidad de proceso y la degradación de la resistencia, la cual necesita ser mitigada tanto a nivel de dispositivo como a nivel arquitectural. Con todo esto, esta tesis doctoral afronta tales problemas de fiabilidad en memorias mediante la utilización de técnicas de reconfiguración avanzada. La consideración de nuevas estrategias de reconfiguración han resultado ser validas tanto para las memorias basadas en celdas SRAM como en `memristive crossbar¿, donde se ha observado una mejora significativa del tiempo de vida en ambos casos. Estas técnicas incluyen circuitos de monitorización para comprobar la fiabilidad de las unidades de memoria, y la implementación arquitectural con el objetivo de reconfigurar los sistemas de memoria hacia una configuración mucho más fiables antes de que el fallo suced

The Fuzziness in Molecular, Supramolecular, and Systems Chemistry

Fuzzy Logic is a good model for the human ability to compute words. It is based on the theory of fuzzy set. A fuzzy set is different from a classical set because it breaks the Law of the Excluded Middle. In fact, an item may belong to a fuzzy set and its complement at the same time and with the same or different degree of membership. The degree of membership of an item in a fuzzy set can be any real number included between 0 and 1. This property enables us to deal with all those statements of which truths are a matter of degree. Fuzzy logic plays a relevant role in the field of Artificial Intelligence because it enables decision-making in complex situations, where there are many intertwined variables involved. Traditionally, fuzzy logic is implemented through software on a computer or, even better, through analog electronic circuits. Recently, the idea of using molecules and chemical reactions to process fuzzy logic has been promoted. In fact, the molecular word is fuzzy in its essence. The overlapping of quantum states, on the one hand, and the conformational heterogeneity of large molecules, on the other, enable context-specific functions to emerge in response to changing environmental conditions. Moreover, analog input–output relationships, involving not only electrical but also other physical and chemical variables can be exploited to build fuzzy logic systems. The development of “fuzzy chemical systems” is tracing a new path in the field of artificial intelligence. This new path shows that artificially intelligent systems can be implemented not only through software and electronic circuits but also through solutions of properly chosen chemical compounds. The design of chemical artificial intelligent systems and chemical robots promises to have a significant impact on science, medicine, economy, security, and wellbeing. Therefore, it is my great pleasure to announce a Special Issue of Molecules entitled “The Fuzziness in Molecular, Supramolecular, and Systems Chemistry.” All researchers who experience the Fuzziness of the molecular world or use Fuzzy logic to understand Chemical Complex Systems will be interested in this book

Tuning the Computational Effort: An Adaptive Accuracy-aware Approach Across System Layers

This thesis introduces a novel methodology to realize accuracy-aware systems, which will help designers integrate accuracy awareness into their systems. It proposes an adaptive accuracy-aware approach across system layers that addresses current challenges in that domain, combining and tuning accuracy-aware methods on different system layers. To widen the scope of accuracy-aware computing including approximate computing for other domains, this thesis presents innovative accuracy-aware methods and techniques for different system layers. The required tuning of the accuracy-aware methods is integrated into a configuration layer that tunes the available knobs of the accuracy-aware methods integrated into a system