3D Stretchable Arch Ribbon Array Fabricated via Grayscale Lithography.

Microstructures with flexible and stretchable properties display tremendous potential applications including integrated systems, wearable devices and bio-sensor electronics. Hence, it is essential to develop an effective method for fabricating curvilinear and flexural microstructures. Despite significant advances in 2D stretchable inorganic structures, large scale fabrication of unique 3D microstructures at a low cost remains challenging. Here, we demonstrate that the 3D microstructures can be achieved by grayscale lithography to produce a curved photoresist (PR) template, where the PR acts as sacrificial layer to form wavelike arched structures. Using plasma-enhanced chemical vapor deposition (PECVD) process at low temperature, the curved PR topography can be transferred to the silicon dioxide layer. Subsequently, plasma etching can be used to fabricate the arched stripe arrays. The wavelike silicon dioxide arch microstructure exhibits Young modulus and fracture strength of 52 GPa and 300 MPa, respectively. The model of stress distribution inside the microstructure was also established, which compares well with the experimental results. This approach of fabricating a wavelike arch structure may become a promising route to produce a variety of stretchable sensors, actuators and circuits, thus providing unique opportunities for emerging classes of robust 3D integrated systems

Nanometer lithography on silicon and hydrogenated amorphous silicon with low-energy electrons

We report the local oxidation of hydrogen terminated silicon (Si) surfaces induced with the scanning-tunneling microscope (STM) operating in air and by a beam of free low-energy electrons. With STM, oxide lines were written in Si(100) and Si(110) and transferred into the substrate by wet etching. In case of Si(110) trenches with a width as small as 35 nm and a depth of 300 nm were made. The same process has also successfully been applied to the patterning of hydrogenated amorphous silicon (a-Si:H) thin films. We demonstrate the fabrication of metallic ‘nanowires’ using a-Si:H as resist layer. With regard to the process of oxidation, it is found that the oxide written with STM is apparently not proportional to the electron current, in contrast to results obtained with a beam of free electrons in an oxygen gas-environment. The dose needed to remove the hydrogen was determined as a function of electron energy. This dose is minimal for 100 eV electrons amounting to 4 mC/cm2

Dose influence on the PMMA e-resist for the development of high-aspect ratio and reproducible sub-micrometric structures by electron beam lithography

In this work, a statistical process control method is presented showing the accuracy and the reliability obtained with of PMMA E-resist AR-P 672, using an Elphy Quantum Electron Beam Lithography module integrated on a FE-SEM Zeiss Auriga instrument. Reproducible nanostructures with an high aspect ratio between e-resist thickness and width of written geometric structure are shown. Detailed investigation of geometry features are investigated with dimension in the range of 200nm to 1-m. The adopted method will show how tuning the Area Dose factor and the PMMA thickness it was possible to determine the correct and reproducible parameters that allows to obtain well defined electron-beam features with a 4:1 aspect ratio. Such high aspect ratio opens the possibility to realize an electron-beam lithography lift-off process by using a standard e-beam resist. © 2016 Author(s)

Fabrication of mesoscale topographical gradients in bulk titanium and their use in injection moulding

Fabrication methods for titanium substrates exhibiting continuous micro and nano scale arrays, with increasing feature heights over the length of the array are reported. The resultant feature heights spanned 0–2 μm. Patterned gradient arrays of circular features with diameters of: 500 nm, 1 μm and 2 μm, spaced by twice the diameter were manufactured by the process using specially prepared titanium substrates. Patterns were exposed by electron beam lithography and the length of the patterned arrays was 15 mm or 20 mm. This work presents two selectivity amplification processes to achieve a gradient of feature heights ranging over the titanium array after consecutive reactive ion etching processes. The first, route A: a HSQ on Ti, gradient amplification process. The second, route B, a SiO2 layer amplification transfer into Ti. The crucial initial gradient component deposited for the amplification process for both routes was a diffusion limited plasma polymerised hexane gradient. Etching using respective reactive ion etch chemistries for each gradient transfer through the various selectivity amplification layers (employing consecutive etch steps, in this way) enables a dual amplification for each route to manufacture. The original gradient is transferred into titanium as a function of the sum of the respective selectivities between the materials, using the appropriate dry etch plasma conditions. The substrates henceforth are referred to as inlays, and were tested for use as a high throughput platform for polymer replication by injection moulding. It is envisaged that the fabrication methodology and resultant topographies have use in a range of engineering applications. The overall selectivity to Ti for polymerised hexane is increased by more than 20 times using each dual amplification process

Self-folding nano- and micropatterned hydrogel tissue engineering scaffolds by single step photolithographic process

Current progress in tissue engineering is focused on the creation of environments in which cultures of relevant cells can adhere, grow and form functional tissue. We propose a method for controlled chemical and topographical cues through surface patterning of self-folding hydrogel films. This provides a conversion of 2D patterning techniques into a viable method of manufacturing a 3D scaffold. While similar bilayers have previously been demonstrated, here we present a faster and high throughput process for fabricating self-folding hydrogel devices incorporating controllable surface nanotopographies by serial hot embossing of sacrificial layers and photolithography

Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible hydrogen silsesquioxane electron beam lithography process

Hydrogen silsesquioxane (HSQ) is a high resolution negative-tone electron beam resist allowing for direct transfer of nanostructures into silicon-on-insulator. Using this resist for electron beam lithography, we fabricate high density lithographically defined Silicon double quantum dot (QD) transistors. We show that our approach is compatible with very large scale integration, allowing for parallel fabrication of up to 144 scalable devices. HSQ process optimisation allowed for realisation of reproducible QD dimensions of 50 nm and tunnel junction down to 25 nm. We observed that 80% of the fabricated devices had dimensional variations of less than 5 nm. These are the smallest high density double QD transistors achieved to date. Single electron simulations combined with preliminary electrical characterisations justify the reliability of our device and process

Photolithographic Mask Fabrication Process Using Cr/Sapphire Carriers

Elaboration of the technology of novel photolithographic masks fabricated on sapphire substrates for UV and DUV application was described. The main technological steps of mask fabrication as Cr metallization deposition, selection of resist for lithography and Cr layer etching were developed and reported. The etching of Cr films was carried out through resist mask. Detailed study of Cr layer etching process was performed using different solutions such as KMnO4, HCl and ceric ammonium nitrate-based solutions to obtain good-quality structures with the smallest possible undercut of Cr layer and smooth edge. The mask fabrication process was validated by fabrication of test structures of microelectronic device using photolithography technique

Micro-Contacts Testing Using a Micro-Force Sensor Compatible with Biological Systems

This paper presents the performance and reliability testing of microelectromechanical systems (MEMS) switches by using a micro-force sensor which was originally designed/used to conduct mechanical testing of biological cells. MEMS switches are key components for radio frequency (RF) applications due to their extremely low power consumption and small geometries over conventional technologies. However, unstable electrical contact resistance severely degrades the performance and reliability of such micro-switches. Therefore, our focus is to improve the performance and reliability of “cold” switched micro-contacts by using novel contact materials and engineered micro-contact surfaces. The contact metallurgies considered in this work are “similar” thin film combinations of Au, and composite Au/CNT. The non-engineered switch consists of a metallic hemispherical bump and a planar sheet as upper and lower contacts, respectively. On the other hand, the engineered switches have 2D pyramid structure in lower contacts while having a hemispherical bump at upper contact. Hemisphere on planar, Au-Au, contact pairs resulted in initial contact resistance (RC) values of ~0.1Ω (FC=200µN) that linearly increased to ~1.0Ω after ~10×106 cycles and then failed open (~10.0Ω) at ~20×106 switching cycles. The Au-Au/CNT composite, hemisphere on planar contact pair showed similar RC performance with extended reliability (~40×106 switching cycles) when the composite film was integrated into the lower planar contacted. Upper hemisphere on the 2D pyramid, Au-Au, contact pairs resulted in initial RC values of ~0.9Ω (FC=200µN) that linearly decreased to ~0.5Ω at \u3e10×106 cycles (not failed). This work suggests that the combination of engineered lower contacts and composite materials can significantly improve the performance and reliability of micro-switches

Cracking pressure control of parylene checkvalve using slanted tensile tethers

MEMS check valves with fixed cracking pressures are important in micro-fluidic applications where the pressure, flow directions and flow rates all need to be carefully controlled. This work presents a new surface-micromachined parylene check valve that uses residual thermal stress in the parylene to control its cracking pressure. The new check valve uses slanted tethers to allow the parylene tensile stress to apply a net downward force on the valving seat against the orifice. The angle of the slanted tethers is made using a gray-scale mask to create a sloped sacrificial photoresist with the following tether parylene deposition. The resulted check valves have both the cracking pressures and flow profiles agreeable well with our theoretical analysis