Linear Current-Mode Active Pixel Sensor

A current mode CMOS active pixel sensor (APS) providing linear light-to-current conversion with inherently low fixed pattern noise (FPN) is presented. The pixel features adjustable-gain current output using a pMOS readout transistor in the linear region of operation. This paper discusses the pixel’s design and operation, and presents an analysis of the pixel’s temporal noise and FPN. Results for zero and first-order pixel mismatch are presented. The pixel was implemented in a both a 3.3 V 0.35 µm and a 1.8 V 0.18 µm CMOS process. The 0.35 µm process pixel had an uncorrected FPN of 1.4%/0.7% with/without column readout mismatch. The 0.18 µm process pixel had 0.4% FPN after delta-reset sampling (DRS). The pixel size in both processes was 10 X 10 µm2, with fill factors of 26% and 66%, respectively

Image Sensor with Focal Plane Extraction of Polarimetric Information

A novel focal plane imaging sensor capable of real time extraction of polarization information is presented. The imaging system consists of a photo array of 256 by 256 linear current mode active pixel sensors (APS). Analog processing circuitry is included at the focal plane for noise suppression and computation of the Stokes parameters. The imaging sensor was fabricated in 0.18μm process with 10μm pixel pitch and 75% fill factor. An array of micro polarizer is designed and fabricated separately and will be mounted on top of the imaging array. Simulation results of the imaging sensor are presented

Low Fixed Pattern Noise Current-mode Imager Using Velocity Saturated Readout Transistors

This paper described a novel current-mode active pixel sensor (APS) imager. Conversion of photodiode voltage to output current is done using transistors operating in velocity saturation region. The high output impedance of this region makes it more suitable for current-sourcing operation than the linear region. The transistors also exhibit high linearity, allowing us to suppress fixed pattern noise (FPN) by correcting for both offset and gain variations among pixels. Experimental results on the fabricated 110×200 pixel array are presented. With conventional correlated double sampling (CDS), FPN is reduced from 3.8% to 0.85%. Further reduction requires compensation of gain variations, and results in a final FPN of 0.19%. A triple sampling approach is introduced to implement the described correction in hardware

Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology

An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy. The differences between these 14 designs allow us to separately estimate the effect of ionizing radiation on microlenses, on low- and zero-threshold-voltage MOSFETs and on several pixel layouts using P+ guard-rings and edgeless transistors. After irradiation, wavelength dependent responsivity drops are observed. All the sensors exhibit a large dark current increase attributed to the shallow trench isolation that surrounds the photodiodes. Saturation voltage rises and readout chain gain variations are also reported. Finally, the radiation hardening perspectives resulting from this paper are discussed

Dynamic range optimisation of CMOS image sensors dedicated to space applications

Nowadays, CMOS image sensors are widely considered for space applications. Their performances have been significantly enhanced with the use of CIS (CMOS Image Sensor) processes in term of dark current, quantum efficiency and conversion gain. Dynamic Range (DR) remains an important parameter for a lot of applications. Most of the dynamic range limitation of CMOS image sensors comes from the pixel. During work performed in collaboration with EADS Astrium, SUPAERO/CIMI laboratory has studied different ways to improve dynamic range and test structures have been developed to perform analysis and characterisation. A first way to improve dynamic range will be described, consisting in improving the voltage swing at the pixel output. Test vehicles and process modifications made to improve voltage swing will be depicted. We have demonstrated a voltage swing improvement more than 30%. A second way to improve dynamic range is to reduce readout noise A new readout architecture has been developed to perform a correlated double sampling readout. Strong readout noise reduction will be demonstrated by measurements performed on our test vehicle. A third way to improve dynamic range is to control conversion gain value. Indeed, in 3 TMOS pixel structure, dynamic range is related to conversion gain through reset noise which is dependant of photodiode capacitance. Decrease and increase of conversion gain have been performed with different design techniques. A good control of the conversion gain will be demonstrated with variation in the range of 0.05 to 3 of initial conversion gain

Programmable active pixel sensor to investigate neural interactions within the retina

Detection of the visual scene by the eye and the resultant neural interactions of the retina-brain system give us our perception of sight. We have developed an Active Pixel Sensor (APS) to be used as a tool for both furthering understanding of these interactions via experimentation with the retina and to make developments towards a realisable retinal prosthesis. The sensor consists of 469 pixels in a hexagonal array. The pixels are interconnected by a programmable neural network to mimic lateral interactions between retinal cells. Outputs from the sensor are in the form of biphasic current pulse trains suitable to stimulate retinal cells via a biocompatible array. The APS will be described with initial characterisation and test results

Characterization of Thin p-on-p Radiation Detectors with Active Edges

Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100 $\mu$m the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.Comment: 23 pages, 16 figures, 1 tabl