Low-power and high-performance SRAM design in high variability advanced CMOS technology

As process technologies shrink, the size and number of memories on a chip are exponentially increasing. Embedded SRAMs are a critical component in modern digital systems, and they strongly impact the overall power, performance, and area. To promote memory-related research in academia, this dissertation introduces OpenRAM, a flexible, portable and open-source memory compiler and characterization methodology for generating and verifying memory designs across different technologies.In addition, SRAM designs, focusing on improving power consumption, access time and bitcell stability are explored in high variability advanced CMOS technologies. To have a stable read/write operation for SRAM in high variability process nodes, a differential-ended single-port 8T bitcell is proposed that improves the read noise margin, write noise margin and readout bitcell current by 45%, 48% and 21%, respectively, compared to a conventional 6T bitcell. Also, a differential-ended single-port 12T bitcell for subthreshold operation is proposed that solves the half-select disturbance and allows efficient bit-interleaving. 12T bitcell has a leakage control mechanism which helps to reduce the power consumption and provides operation down to 0.3 V. Both 8T and 12T bitcells are analyzed in a 64 kb SRAM array using 32 nm technology. Besides, to further improve the access time and power consumption, two tracking circuits (multi replica bitline delay and reconfigurable replica bitline delay techniques) are proposed to aid the generation of accurate and optimum sense amplifier set time.An error tolerant SRAM architecture suitable for low voltage video application with dynamic power-quality management is also proposed in this dissertation. This memory uses three power supplies to improve the SRAM stability in low voltages. The proposed triple-supply approach achieves 63% improvement in image quality and 69% reduction in power consumption compared to a single-supply 64 kb SRAM array at 0.70 V

Low-power and application-specific SRAM design for energy-efficient motion estimation

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.Cataloged from PDF version of thesis.Includes bibliographical references (p. 181-189).Video content is expected to account for 70% of total mobile data traffic in 2015. High efficiency video coding, in this context, is crucial for lowering the transmission and storage costs for portable electronics. However, modern video coding standards impose a large hardware complexity. Hence, energy-efficiency of these hardware blocks is becoming more critical than ever before for mobile devices. SRAMs are critical components in almost all SoCs affecting the overall energy-efficiency. This thesis focuses on algorithm and architecture development as well as low-power and application-specific SRAM design targeting motion estimation. First, a motion estimation design is considered for the next generation video standard, HEVC. Hardware cost and coding efficiency trade-offs are quantified and an optimum design choice between hardware complexity and coding efficiency is proposed. Hardware-efficient search algorithm, shared search range across CU engines and pixel pre-fetching algorithms provide 4.3x area, 56x on-chip bandwidth and 151 x off-chip bandwidth reduction. Second, a highly-parallel motion estimation design targeting ultra-low voltage operation and supporting AVC/H.264 and VC-1 standards are considered. Hardware reconfigurability along with frame and macro-block parallel processing are implemented for this engine to maximize hardware sharing between multiple standards and to meet throughput constraints. Third, in the context of low-power SRAMs, a 6T and an 8T SRAM are designed in 28nm and 45nm CMOS technologies targeting low voltage operation. The 6T design achieves operation down to 0.6V and the 8T design achieves operation down to 0.5V providing ~ 2.8x and ~ 4.8x reduction in energy/access respectively. Finally, an application-specific SRAM design targeted for motion estimation is developed. Utilizing the correlation of pixel data to reduce bit-line switching activity, this SRAM achieves up to 1.9x energy savings compared to a similar conventional 8T design. These savings demonstrate that application-specific SRAM design can introduce a new dimension and can be combined with voltage scaling to maximize energy-efficiency.by Mahmut Ersin Sinangil.Ph.D

ULTRALOW-POWER, LOW-VOLTAGE DIGITAL CIRCUITS FOR BIOMEDICAL SENSOR NODES

Ph.DDOCTOR OF PHILOSOPH

Ultra-Low Power Circuit Design for Cubic-Millimeter Wireless Sensor Platform.

Modern daily life is surrounded by smaller and smaller computing devices. As Bell’s Law predicts, the research community is now looking at tiny computing platforms and mm3-scale sensor systems are drawing an increasing amount of attention since they can create a whole new computing environment. Designing mm3-scale sensor nodes raises various circuit and system level challenges and we have addressed and proposed novel solutions for many of these challenges to create the first complete 1.0mm3 sensor system including a commercial microprocessor. We demonstrate a 1.0mm3 form factor sensor whose modular die-stacked structure allows maximum volume utilization. Low power I2C communication enables inter-layer serial communication without losing compatibility to standard I2C communication protocol. A dual microprocessor enables concurrent computation for the sensor node control and measurement data processing. A multi-modal power management unit allowed energy harvesting from various harvesting sources. An optical communication scheme is provided for initial programming, synchronization and re-programming after recovery from battery discharge. Standby power reduction techniques are investigated and a super cut-off power gating scheme with an ultra-low power charge pump reduces the standby power of logic circuits by 2-19× and memory by 30%. Different approaches for designing low-power memory for mm3-scale sensor nodes are also presented in this work. A dual threshold voltage gain cell eDRAM design achieves the lowest eDRAM retention power and a 7T SRAM design based on hetero-junction tunneling transistors reduces the standby power of SRAM by 9-19× with only 15% area overhead. We have paid special attention to the timer for the mm3-scale sensor systems and propose a multi-stage gate-leakage-based timer to limit the standard deviation of the error in hourly measurement to 196ms and a temperature compensation scheme reduces temperature dependency to 31ppm/°C. These techniques for designing ultra-low power circuits for a mm3-scale sensor enable implementation of a 1.0mm3 sensor node, which can be used as a skeleton for future micro-sensor systems in variety of applications. These microsystems imply the continuation of the Bell’s Law, which also predicts the massive deployment of mm3-scale computing systems and emergence of even smaller and more powerful computing systems in the near future.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/91438/1/sori_1.pd

Low energy digital circuit design using sub-threshold operation

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2006.Includes bibliographical references (p. 189-202).Scaling of process technologies to deep sub-micron dimensions has made power management a significant concern for circuit designers. For emerging low power applications such as distributed micro-sensor networks or medical applications, low energy operation is the primary concern instead of speed, with the eventual goal of harvesting energy from the environment. Sub-threshold operation offers a promising solution for ultra-low-energy applications because it often achieves the minimum energy per operation. While initial explorations into sub-threshold circuits demonstrate its promise, sub-threshold circuit design remains in its infancy. This thesis makes several contributions that make sub-threshold design more accessible to circuit designers. First, a model for energy consumption in sub-threshold provides an analytical solution for the optimum VDD to minimize energy. Fitting this model to a generic circuit allows easy estimation of the impact of processing and environmental parameters on the minimum energy point. Second, analysis of device sizing for sub-threshold circuits shows the trade-offs between sizing for minimum energy and for minimum voltage operation.(cont.) A programmable FIR filter test chip fabricated in 0.18pum bulk CMOS provides measurements to confirm the model and the sizing analysis. Third, a low-overhead method for integrating sub-threshold operation with high performance applications extends dynamic voltage scaling across orders of magnitude of frequency and provides energy scalability down to the minimum energy point. A 90nm bulk CMOS test chip confirms the range of operation for ultra-dynamic voltage scaling. Finally, sub-threshold operation is extended to memories. Analysis of traditional SRAM bitcells and architectures leads to development of a new bitcell for robust sub-threshold SRAM operation. The sub-threshold SRAM is analyzed experimentally in a 65nm bulk CMOS test chip.by Benton H. Calhoun.Ph.D

Non-invasive Techniques Towards Recovering Highly Secure Unclonable Cryptographic Keys and Detecting Counterfeit Memory Chips

Due to the ubiquitous presence of memory components in all electronic computing systems, memory-based signatures are considered low-cost alternatives to generate unique device identifiers (IDs) and cryptographic keys. On the one hand, this unique device ID can potentially be used to identify major types of device counterfeitings such as remarked, overproduced, and cloned. On the other hand, memory-based cryptographic keys are commercially used in many cryptographic applications such as securing software IP, encrypting key vault, anchoring device root of trust, and device authentication for could services. As memory components generate this signature in runtime rather than storing them in memory, an attacker cannot clone/copy the signature and reuse them in malicious activity. However, to ensure the desired level of security, signatures generated from two different memory chips should be completely random and uncorrelated from each other. Traditionally, memory-based signatures are considered unique and uncorrelated due to the random variation in the manufacturing process. Unfortunately, in previous studies, many deterministic components of the manufacturing process, such as memory architecture, layout, systematic process variation, device package, are ignored. This dissertation shows that these deterministic factors can significantly correlate two memory signatures if those two memory chips share the same manufacturing resources (i.e., manufacturing facility, specification set, design file, etc.). We demonstrate that this signature correlation can be used to detect major counterfeit types in a non-invasive and low-cost manner. Furthermore, we use this signature correlation as side-channel information to attack memory-based cryptographic keys. We validate our contribution by collecting data from several commercially available off-the-shelf (COTS) memory chips/modules and considering different usage-case scenarios

Project and development of hardware accelerators for fast computing in multimedia processing

2017 - 2018The main aim of the present research work is to project and develop very large scale electronic integrated circuits, with particular attention to the ones devoted to image processing applications and the related topics. In particular, the candidate has mainly investigated four topics, detailed in the following. First, the candidate has developed a novel multiplier circuit capable of obtaining floating point (FP32) results, given as inputs an integer value from a fixed integer range and a set of fixed point (FI) values. The result has been accomplished exploiting a series of theorems and results on a number theory problem, known as Bachet’s problem, which allows the development of a new Distributed Arithmetic (DA) based on 3’s partitions. This kind of application results very fit for filtering applications working on an integer fixed input range, such in image processing applications, in which the pixels are coded on 8 bits per channel. In fact, in these applications the main problem is related to the high area and power consumption due to the presence of many Multiply and Accumulate (MAC) units, also compromising real-time requirements due to the complexity of FP32 operations. For these reasons, FI implementations are usually preferred, at the cost of lower accuracies. The results for the single multiplier and for a filter of dimensions 3x3 show respectively delay of 2.456 ns and 4.7 ns on FPGA platform and 2.18 ns and 4.426 ns on 90nm std_cell TSMC 90 nm implementation. Comparisons with state-of-the-art FP32 multipliers show a speed increase of up to 94.7% and an area reduction of 69.3% on FPGA platform. ... [edited by Author]XXXI cicl

Enabling Recovery of Secure Non-Volatile Memories

Emerging non-volatile memories (NVMs), such as phase change memory (PCM), spin-transfer torque RAM (STT-RAM) and resistive RAM (ReRAM), have dual memory-storage characteristics and, therefore, are strong candidates to replace or augment current DRAM and secondary storage devices. The newly released Intel 3D XPoint persistent memory and Optane SSD series have shown promising features. However, when these new devices are exposed to events such as power loss, many issues arise when data recovery is expected. In this dissertation, I devised multiple schemes to enable secure data recovery for emerging NVM technologies when memory encryption is used. With the data-remanence feature of NVMs, physical attacks become easier; hence, emerging NVMs are typically paired with encryption. In particular, counter-mode encryption is commonly used due to its performance and security advantages over other schemes (e.g., electronic codebook encryption). However, enabling data recovery in power failure events requires the recovery of security metadata associated with data blocks. Naively writing security metadata updates along with data for each operation can further exacerbate the write endurance problem of NVMs as they have limited write endurance and very slow write operations. Therefore, it is necessary to enable the recovery of data and security metadata (encryption counters) but without incurring a significant number of writes. The first work of this dissertation presents an explanation of Osiris, a novel mechanism that repurposes error correcting code (ECC) co-located with data to enable recovery of encryption counters by additionally serving as a sanity-check for encryption counters used. Thus, by using a stop-loss mechanism with a limited number of trials, ECC can be used to identify which encryption counter that was used most recently to encrypt the data and, hence, allow correct decryption and recovery. The first work of this dissertation explores how different stop-loss parameters along with optimizations of Osiris can potentially reduce the number of writes. Overall, Osiris enables the recovery of encryption counters while achieving better performance and fewer writes than a conventional write-back caching scheme of encryption counters, which lacks the ability to recover encryption counters. Later, in the second work, Osiris implementation is expanded to work with different counter-mode memory encryption schemes, where we use an epoch-based approach to periodically persist updated counters. Later, when a crash occurs, we can recover counters through test-and-verification to identify the correct counter within the size of an epoch for counter recovery. Our proposed scheme, Osiris-Global, incurs minimal performance overheads and write overheads in enabling the recovery of encryption counters. In summary, the findings of the present PhD work enable the recovery of secure NVM systems and, hence, allows persistent applications to leverage the persistency features of NVMs. Meanwhile, it also minimizes the number of writes required in meeting this crash consistency requirement of secure NVM systems

Spin-Transfer-Torque (STT) Devices for On-chip Memory and Their Applications to Low-standby Power Systems

With the scaling of CMOS technology, the proportion of the leakage power to total power consumption increases. Leakage may account for almost half of total power consumption in high performance processors. In order to reduce the leakage power, there is an increasing interest in using nonvolatile storage devices for memory applications. Among various promising nonvolatile memory elements, spin-transfer torque magnetic RAM (STT-MRAM) is identified as one of the most attractive alternatives to conventional SRAM. However, several design challenges of STT-MRAM such as shared read and write current paths, single-ended sensing, and high dynamic power are major challenges to be overcome to make it suitable for on-chip memories. To mitigate such problems, we propose a domain wall coupling based spin-transfer torque (DWCSTT) device for on-chip caches. Our proposed DWCSTT bit-cell decouples the read and the write current paths by the electrically-insulating magnetic coupling layer so that we can separately optimize read operation without having an impact on write-ability. In addition, the complementary polarizer structure in the read path of the DWCSTT device allows DWCSTT to enable self-referenced differential sensing. DWCSTT bit-cells improve the write power consumption due to the low electrical resistance of the write current path. Furthermore, we also present three different bit-cell level design techniques of Spin-Orbit Torque MRAM (SOT-MRAM) for alleviating some of the inefficiencies of conventional magnetic memories while maintaining the advantages of spin-orbit torque (SOT) based novel switching mechanism such as low write current requirement and decoupled read and write current path. Our proposed SOT-MRAM with supporting dual read/write ports (1R/1W) can address the issue of high-write latency of STT-MRAM by simultaneous 1R/1W accesses. Second, we propose a new type of SOT-MRAM which uses only one access transistor along with a Schottky diode in order to mitigate the area-overhead caused by two access transistors in conventional SOT-MRAM. Finally, a new design technique of SOT-MRAM is presented to improve the integration density by utilizing a shared bit-line structure

Soft Error Resistant Design of the AES Cipher Using SRAM-based FPGA

This thesis presents a new architecture for the reliable implementation of the symmetric-key algorithm Advanced Encryption Standard (AES) in Field Programmable Gate Arrays (FPGAs). Since FPGAs are prone to soft errors caused by radiation, and AES is highly sensitive to errors, reliable architectures are of significant concern. Energetic particles hitting a device can flip bits in FPGA SRAM cells controlling all aspects of the implementation. Unlike previous research, heterogeneous error detection techniques based on properties of the circuit and functionality are used to provide adequate reliability at the lowest possible cost. The use of dual ported block memory for SubBytes, duplication for the control circuitry, and a new enhanced parity technique for MixColumns is proposed. Previous parity techniques cover single errors in datapath registers, however, soft errors can occur in the control circuitry as well as in SRAM cells forming the combinational logic and routing. In this research, propagation of single errors is investigated in the routed netlist. Weaknesses of the previous parity techniques are identified. Architectural redesign at the register-transfer level is introduced to resolve undetected single errors in both the routing and the combinational logic. Reliability of the AES implementation is not only a critical issue in large scale FPGA-based systems but also at both higher altitudes and in space applications where there are a larger number of energetic particles. Thus, this research is important for providing efficient soft error resistant design in many current and future secure applications