Cloud-efficient modelling and simulation of magnetic nano materials

Scientific simulations are rarely attempted in a cloud due to the substantial performance costs of virtualization. Considerable communication overheads, intolerable latencies, and inefficient hardware emulation are the main reasons why this emerging technology has not been fully exploited. On the other hand, the progress of computing infrastructure nowadays is strongly dependent on perspective storage medium development, where efficient micromagnetic simulations play a vital role in future memory design. This thesis addresses both these topics by merging micromagnetic simulations with the latest OpenStack cloud implementation while providing a time and costeffective alternative to expensive computing centers. However, many challenges have to be addressed before a high-performance cloud platform emerges as a solution for problems in micromagnetic research communities. First, the best solver candidate has to be selected and further improved, particularly in the parallelization and process communication domain. Second, a 3-level cloud communication hierarchy needs to be recognized and each segment adequately addressed. The required steps include breaking the VMisolation for the host’s shared memory activation, cloud network-stack tuning, optimization, and efficient communication hardware integration. The project work concludes with practical measurements and confirmation of successfully implemented simulation into an open-source cloud environment. It is achieved that the renewed Magpar solver runs for the first time in the OpenStack cloud by using ivshmem for shared memory communication. Also, extensive measurements proved the effectiveness of our solutions, yielding from sixty percent to over ten times better results than those achieved in the standard cloud.Aufgrund der erheblichen Leistungskosten der Virtualisierung werden wissenschaftliche Simulationen in einer Cloud selten versucht. Beträchtlicher Kommunikationsaufwand, erhebliche Latenzen und ineffiziente Hardwareemulation sind die Hauptgründe, warum diese aufkommende Technologie nicht vollständig genutzt wurde. Andererseits hängt der Fortschritt der Computertechnologie heutzutage stark von der Entwicklung perspektivischer Speichermedien ab, bei denen effiziente mikromagnetische Simulationen eine wichtige Rolle für die zukünftige Speichertechnologie spielen. Diese Arbeit befasst sich mit diesen beiden Themen, indem mikromagnetische Simulationen mit der neuesten OpenStack Cloud-Implementierung zusammengeführt werden, um eine zeit- und kostengünstige Alternative zu teuren Rechenzentren bereitzustellen. Viele Herausforderungen müssen jedoch angegangen werden, bevor eine leistungsstarke Cloud-Plattform als Lösung für Probleme in mikromagnetischen Forschungsgemeinschaften entsteht. Zunächst muss der beste Kandidat für die Lösung ausgewählt und weiter verbessert werden, insbesondere im Bereich der Parallelisierung und Prozesskommunikation. Zweitens muss eine 3-stufige CloudKommunikationshierarchie erkannt und jedes Segment angemessen adressiert werden. Die erforderlichen Schritte umfassen das Aufheben der VM-Isolation, um den gemeinsam genutzten Speicher zwischen Cloud-Instanzen zu aktivieren, die Optimierung des Cloud-Netzwerkstapels und die effiziente Integration von Kommunikationshardware. Die praktische Arbeit endet mit Messungen und der Bestätigung einer erfolgreich implementierten Simulation in einer Open-Source Cloud-Umgebung. Als Ergebnis haben wir erreicht, dass der neu erstellte Magpar-Solver zum ersten Mal in der OpenStack Cloud ausgeführt wird, indem ivshmem für die Shared-Memory Kommunikation verwendet wird. Umfangreiche Messungen haben auch die Wirksamkeit unserer Lösungen bewiesen und von sechzig Prozent bis zu zehnmal besseren Ergebnissen als in der Standard Cloud geführt

Physically Equivalent Intelligent Systems for Reasoning Under Uncertainty at Nanoscale

Machines today lack the inherent ability to reason and make decisions, or operate in the presence of uncertainty. Machine-learning methods such as Bayesian Networks (BNs) are widely acknowledged for their ability to uncover relationships and generate causal models for complex interactions. However, their massive computational requirement, when implemented on conventional computers, hinders their usefulness in many critical problem areas e.g., genetic basis of diseases, macro finance, text classification, environment monitoring, etc. We propose a new non-von Neumann technology framework purposefully architected across all layers for solving these problems efficiently through physical equivalence, enabled by emerging nanotechnology. The architecture builds on a probabilistic information representation and multi-domain mixed-signal circuit style, and is tightly coupled to a nanoscale physical layer that spans magnetic and electrical domains. Based on bottom-up device-circuit-architecture simulations, we show up to four orders of magnitude performance improvement (using computational resolution of 0.1) vs. best-of-breed multi-core machines with 100 processors, for BNs with about a million variables. Smaller problem sizes of ~100 variables can be realized at 20 mW power consumption and very low area around a few tenths of a mm2. Our vision is to enable solving complex Bayesian problems in real time, as well as enable intelligence capabilities at a small scale everywhere, ushering in a new era of machine intelligence

Approximate Computing Survey, Part II: Application-Specific & Architectural Approximation Techniques and Applications

The challenging deployment of compute-intensive applications from domains such Artificial Intelligence (AI) and Digital Signal Processing (DSP), forces the community of computing systems to explore new design approaches. Approximate Computing appears as an emerging solution, allowing to tune the quality of results in the design of a system in order to improve the energy efficiency and/or performance. This radical paradigm shift has attracted interest from both academia and industry, resulting in significant research on approximation techniques and methodologies at different design layers (from system down to integrated circuits). Motivated by the wide appeal of Approximate Computing over the last 10 years, we conduct a two-part survey to cover key aspects (e.g., terminology and applications) and review the state-of-the art approximation techniques from all layers of the traditional computing stack. In Part II of our survey, we classify and present the technical details of application-specific and architectural approximation techniques, which both target the design of resource-efficient processors/accelerators & systems. Moreover, we present a detailed analysis of the application spectrum of Approximate Computing and discuss open challenges and future directions.Comment: Under Review at ACM Computing Survey

Applications of Emerging Memory in Modern Computer Systems: Storage and Acceleration

In recent year, heterogeneous architecture emerges as a promising technology to conquer the constraints in homogeneous multi-core architecture, such as supply voltage scaling, off-chip communication bandwidth, and application parallelism. Various forms of accelerators, e.g., GPU and ASIC, have been extensively studied for their tradeoffs between computation efficiency and adaptivity. But with the increasing demand of the capacity and the technology scaling, accelerators also face limitations on cost-efficiency due to the use of traditional memory technologies and architecture design. Emerging memory has become a promising memory technology to inspire some new designs by replacing traditional memory technologies in modern computer system. In this dissertation, I will first summarize my research on the application of Spin-transfer torque random access memory (STT-RAM) in GPU memory hierarchy, which offers simple cell structure and non-volatility to enable much smaller cell area than SRAM and almost zero standby power. Then I will introduce my research about memristor implementation as the computation component in the neuromorphic computing accelerator, which has the similarity between the programmable resistance state of memristors and the variable synaptic strengths of biological synapses to simplify the realization of neural network model. At last, a dedicated interconnection network design for multicore neuromorphic computing system will be presented to reduce the prominent average latency and power consumption brought by NoC in a large size neuromorphic computing system

Design Space Exploration and Resource Management of Multi/Many-Core Systems

The increasing demand of processing a higher number of applications and related data on computing platforms has resulted in reliance on multi-/many-core chips as they facilitate parallel processing. However, there is a desire for these platforms to be energy-efficient and reliable, and they need to perform secure computations for the interest of the whole community. This book provides perspectives on the aforementioned aspects from leading researchers in terms of state-of-the-art contributions and upcoming trends

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Building Scalable Architectures Using Emerging Memory Technologies

A confluence of trends is reshaping computing today. On one end, the massive amounts of data being generated by the proliferation of sensing and internet services are creating a demand for better computer architectures and systems. The other stream of the confluence is the nanotechnology advances that are unearthing new memory device technologies with the potential to replace (or be combined with) conventional memories. Given these trends, this thesis examines emerging memory device technologies that provide a unique opportunity to build computer architectures with efficient and scalable data storage and processing capabilities. The associated memory architectures of these new systems promise to offer distinctive features such as intrinsic non-volatility, highly dense memory structures, extremely low-power consumption and even embedded processing capabilities. Among others, some examples of emerging memory technologies with such features are PCM, 3D Xpoint, STT-RAM and ReRAM. A central question with the new memory architectures built with emerging memory technologies is whether or not the resultant systems are scalable. Towards answering this question, this thesis identifies that conventional memory architecture specific scaling methods may not directly apply in case of emerging memory technologies. These methods were developed mostly for SRAM and DRAM, and today, they do not provide the desired outcomes for emerging memory technologies. As a result, there exist fundamental unsolved problems concerning scalability in building memory architectures. Unfortunately, this means that even though emerging memory technologies provide distinctive features, they may be largely left untapped. Given the scalability concerns, this thesis then advocates a scalability-first approach for building computer architectures using emerging memory technologies while being aware of the limitations and opportunities associated with them. As demonstrations of the scalability-first approach, the thesis discusses several scalability problems encountered in systems using emerging memory technologies. It also brings out potential solutions for each of these problems in the form of novel techniques and tools. For instance, the thesis discusses the problem and a solution for scaling write order enforcement mechanisms for data persistence on large non-volatile main memory systems, followed by the problem and a potential solution for scaling write bandwidth and thereby reducing memory interference on systems with dense non-volatile memory caches. Also discussed are methods for scaling system architectures with in-memory processing capability subject to its operational complexity and other limits. The proposed scalability-first approach points to prospects and ways for better adoption of emerging memory technologies within existing systems. The approach and the solutions also lead to likely transition paths to even more scalable and markedly different systems of the future