Fault modelling and accelerated simulation of integrated circuits manufacturing defects under process variation

As silicon manufacturing process scales to and beyond the 65-nm node, process variation can no longer be ignored. The impact of process variation on integrated circuit performance and power has received significant research input. Variation-aware test, on the other hand, is a relatively new research area that is currently receiving attention worldwide.Research has shown that test without considering process variation may lead to loss of test quality. Fault modelling and simulation serve as a backbone of manufacturing test. This thesis is concerned with developing efficient fault modelling techniques and simulation methodologies that take into account the effect of process variation on manufacturing defects with particular emphasis on resistive bridges and resistive opens.The first contribution of this thesis addresses the problem of long computation time required to generate logic fault of resistive bridges under process variation by developing a fast and accurate modelling technique to model logic fault behaviour of resistive bridges.The new technique is implemented by employing two efficient voltage calculation algorithms to calculate the logic threshold voltage of driven gates and critical resistance of a fault-site to enable the computation of bridge logic faults without using SPICE. Simulation results show that the technique is fast (on average 53 times faster) and accurate (worst case is 2.64% error) when compared with HSPICE. The second contribution analyses the complexity of delay fault simulation of resistive bridges to reduce the computation time of delay fault when considering process variation. An accelerated delay fault simulation methodology of resistive bridges is developed by employing a three-step strategy to speed up the calculation of transient gate output voltage which is needed to accurately compute delay faults. Simulation results show that the methodology is on average 17.4 times faster, with 5.2% error in accuracy, when compared with HSPICE. The final contribution presents an accelerated simulation methodology of resistive opens to address the problem of long simulation time of delay fault when considering process variation. The methodology is implemented by using two efficient algorithms to accelerate the computation of transient gate output voltage and timing critical resistance of an open fault-site. Simulation results show that the methodology is on average up to 52 times faster than HSPICE, with 4.2% error in accuracy

A DLL Based Test Solution for 3D ICs

Integrated circuits (ICs) are rapidly changing and vertical integration and packaging strategies have already become an important research topic. 2.5D and 3D IC integrations have obvious advantages over the conventional two dimensional IC implementations in performance, capacity, and power consumption. A passive Si interposer utilizing Through-Silicon via (TSV) technology is used for 2.5D IC integration. TSV is also the enabling technology for 3D IC integration. TSV manufacturing defects can affect the performance of stacked devices and reduce the yield. Manufacturing test methodologies for TSVs have to be developed to ensure fault-free devices. This thesis presents two test methods for TSVs in 2.5D and 3D ICs utilizing Delay-Locked Loop (DLL) modules. In the test method developed for TSVs in 2.5D ICs, a DLL is used to determine the propagation delay for fault detection. TSV faults in 3D ICs are detected through observation of the control voltage of a DLL. The proposed test methods present a robust performance against Process, supply Voltage and Temperature (PVT) variations due to the inherent feedback of DLLs. 3D full-wave simulations are performed to extract circuit level models for TSVs and fragments of an interposer wires using HFSS simulation tools. The extracted TSV models are then used to perform circuit level simulations using ADS tools from Agilent. Simulation results indicate that the proposed test solution for TSVs can detect manufacturing defects affecting the TSV propagation delay

Stochastic Memory Devices for Security and Computing

With the widespread use of mobile computing and internet of things, secured communication and chip authentication have become extremely important. Hardware-based security concepts generally provide the best performance in terms of a good standard of security, low power consumption, and large-area density. In these concepts, the stochastic properties of nanoscale devices, such as the physical and geometrical variations of the process, are harnessed for true random number generators (TRNGs) and physical unclonable functions (PUFs). Emerging memory devices, such as resistive-switching memory (RRAM), phase-change memory (PCM), and spin-transfer torque magnetic memory (STT-MRAM), rely on a unique combination of physical mechanisms for transport and switching, thus appear to be an ideal source of entropy for TRNGs and PUFs. An overview of stochastic phenomena in memory devices and their use for developing security and computing primitives is provided. First, a broad classification of methods to generate true random numbers via the stochastic properties of nanoscale devices is presented. Then, practical implementations of stochastic TRNGs, such as hardware security and stochastic computing, are shown. Finally, future challenges to stochastic memory development are discussed

FPGA BASED SELF-HEALING STRATEGY FOR SYNCHRONOUS SEQUENTIAL CIRCUITS

The paper develops an efficient mechanism with a view to healing bridging faults in synchronous sequential circuits. The scheme inserts faults randomly into the system at the signal levels, encompasses ways to intrigue the state of the signals and carries it with steps to rig out the true values at the primary output lines. The attempts espouse the ability of the methodology to explore the occurrence of a variety of single and multiple bridging faults and arrive at the true output. The approach enables to detect the occurrence of wired-OR and wired AND bridging faults in the combinational part of the serial binary adder as the CUT and heal both the inter and intra-gate faults through the use of the proposed methodology. It allows claiming a lower area overhead and computationally a sharp increase in the fault coverage area over the existing Triple Modular Redundancy (TMR) technique. The Field Programmable Gate Arrays (FPGA) based Spartan architecture operates through Very High-Speed Integrated Circuit Hardware Description Language (VHDL) to synthesize the Modelsim code for validating the simulation exercises. The claim incites to increase the reliability of the synchronous sequential circuits and espouse a place for the use of the strategy in the digital world

Contactless Test Access Mechanism for 3D IC

3D IC integration presents many advantages over the current 2D IC integration. It has the potential to reduce the power consumption and the physical size while supporting higher bandwidth and processing speed. Through Silicon Via’s (TSVs) are vertical interconnects between different layers of 3D ICs with a typical 5μm diameter and 50μm length. To test a 3D IC, an access mechanism is needed to apply test vectors to TSVs and observe their responses. However, TSVs are too small for access by current wafer probes and direct TSV probing may affect their physical integrity. In addition, the probe needles for direct TSV probing must be cleaned or replaced frequently. Contactless probing method resolves most of the TSV probing problems and can be employed for small-pitch TSVs. In this dissertation, contactless test access mechanisms for 3D IC have been explored using capacitive and inductive coupling techniques. Circuit models for capacitive and inductive communication links are extracted using 3D full-wave simulations and then circuit level simulations are carried out using Advanced Design System (ADS) design environment to verify the results. The effects of cross-talk and misalignment on the communication link have been investigated. A contactless TSV probing method using capacitive coupling is proposed and simulated. A prototype was fabricated using TSMC 65nm CMOS technology to verify the proposed method. The measurement results on the fabricated prototype show that this TSV probing scheme presents -55dB insertion loss at 1GHz frequency and maintains higher than 35dB signal-to-noise ratio within 5µm distance. A microscale contactless probe based on the principle of resonant inductive coupling has also been designed and simulated. Experimental measurements on a prototype fabricated in TSMC 65nm CMOS technology indicate that the data signal on the TSV can be reconstructed when the distance between the TSV and the probe remains less than 15µm

AI/ML Algorithms and Applications in VLSI Design and Technology

An evident challenge ahead for the integrated circuit (IC) industry in the nanometer regime is the investigation and development of methods that can reduce the design complexity ensuing from growing process variations and curtail the turnaround time of chip manufacturing. Conventional methodologies employed for such tasks are largely manual; thus, time-consuming and resource-intensive. In contrast, the unique learning strategies of artificial intelligence (AI) provide numerous exciting automated approaches for handling complex and data-intensive tasks in very-large-scale integration (VLSI) design and testing. Employing AI and machine learning (ML) algorithms in VLSI design and manufacturing reduces the time and effort for understanding and processing the data within and across different abstraction levels via automated learning algorithms. It, in turn, improves the IC yield and reduces the manufacturing turnaround time. This paper thoroughly reviews the AI/ML automated approaches introduced in the past towards VLSI design and manufacturing. Moreover, we discuss the scope of AI/ML applications in the future at various abstraction levels to revolutionize the field of VLSI design, aiming for high-speed, highly intelligent, and efficient implementations

Test and Diagnosis of Integrated Circuits

The ever-increasing growth of the semiconductor market results in an increasing complexity of digital circuits. Smaller, faster, cheaper and low-power consumption are the main challenges in semiconductor industry. The reduction of transistor size and the latest packaging technology (i.e., System-On-a-Chip, System-In-Package, Trough Silicon Via 3D Integrated Circuits) allows the semiconductor industry to satisfy the latest challenges. Although producing such advanced circuits can benefit users, the manufacturing process is becoming finer and denser, making chips more prone to defects.The work presented in the HDR manuscript addresses the challenges of test and diagnosis of integrated circuits. It covers:- Power aware test;- Test of Low Power Devices;- Fault Diagnosis of digital circuits