1,660 research outputs found
Controlled Synthesis of Organic/Inorganic van der Waals Solid for Tunable Light-matter Interactions
Van der Waals (vdW) solids, as a new type of artificial materials that
consist of alternating layers bonded by weak interactions, have shed light on
fascinating optoelectronic device concepts. As a result, a large variety of vdW
devices have been engineered via layer-by-layer stacking of two-dimensional
materials, although shadowed by the difficulties of fabrication. Alternatively,
direct growth of vdW solids has proven as a scalable and swift way, highlighted
by the successful synthesis of graphene/h-BN and transition metal
dichalcogenides (TMDs) vertical heterostructures from controlled vapor
deposition. Here, we realize high-quality organic and inorganic vdW solids,
using methylammonium lead halide (CH3NH3PbI3) as the organic part (organic
perovskite) and 2D inorganic monolayers as counterparts. By stacking on various
2D monolayers, the vdW solids behave dramatically different in light emission.
Our studies demonstrate that h-BN monolayer is a great complement to organic
perovskite for preserving its original optical properties. As a result,
organic/h-BN vdW solid arrays are patterned for red light emitting. This work
paves the way for designing unprecedented vdW solids with great potential for a
wide spectrum of applications in optoelectronics
Enhanced Visibility of MoS2, MoSe2, WSe2 and Black Phosphorus: Making Optical Identification of 2D Semiconductors Easier
We explore the use of Si3N4/Si substrates as a substitute of the standard
SiO2/Si substrates employed nowadays to fabricate nanodevices based on 2D
materials. We systematically study the visibility of several 2D semiconducting
materials that are attracting a great deal of interest in nanoelectronics and
optoelectronics: MoS2, MoSe2, WSe2 and black phosphorus. We find that the use
of Si3N4/Si substrates provides an increase of the optical contrast up to a
50%-100% and also the maximum contrast shifts towards wavelength values optimal
for human eye detection, making optical identification of 2D semiconductors
easier.Comment: 4 figures + 3 supp.info. figure
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Photochemically Induced Phase Change in Monolayer Molybdenum Disulfide.
Monolayer transition metal dichalcogenide (TMDs) are promising candidates for two-dimensional (2D) ultrathin, flexible, low-power, and transparent electronics and optoelectronics. However, the performance of TMD-based devices is still limited by the relatively low carrier mobility and the large contact resistance between the semiconducting 2D channel material and the contact metal electrodes. Phase-engineering in monolayer TMDs showed great promise in enabling the fabrication of high-quality hetero-phase structures with controlled carrier mobilities and heterojunction materials with reduced contact resistance. However, to date, general methods to induce phase-change in monolayer TMDs either employ highly-hostile organometallic compounds, or have limited compatibility with large-scale, cost-effective device fabrication. In this paper, we report a new photochemical method to induce semiconductor to metallic phase transition in monolayer MoS2 in a benign chemical environment, through a bench-top, cost-effective solution phase process that is compatible with large-scale device fabrication. It was demonstrated that photoelectrons produced by the band-gap absorption of monolayer MoS2 have enough chemical potential to activate the phase transition in the presence of an electron-donating solvent. This novel photochemical phase-transition mechanism advances our fundamental understanding of the phase transformation in 2D transition metal dichalcogenides (TMDs), and will open new revenues in the fabrication of atomically-thick metal-semiconductor heterostructures for improved carrier mobility and reduced contact resistance in TMD-based electronic and optoelectronic devices
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