A study of subterahertz HEMT monolithic oscillators

A detailed study of monolithic InP-based HEMT oscillators for subterahertz operation is presented. InAlAs/InGaAs HEMT's have been optimized for high frequency operation and showed very high maximum oscillation frequencies (f(sub max)) of 310 GHz using offset self-aligned gamma-gate technology. Power characteristics of HEMT oscillators are reported. An oscillation power of more than 10 mW was evaluated by large-signal analysis at 320 GHz using HEMT's with f(sub max) = 450 GHz, V(sub br) = 10 V and a gate width (W(sub g)) of 8 x 22.5 microns. Oscillator topology studies showed that complex feedback schemes such as dual and active feedback enhance the negative resistance. Push-push oscillator designs based on harmonic signal generation can finally be used to overcome the frequency barrier imposed by f(sub max)

An assessment of technology alternatives for telecommunications and information management for the space exploration initiative

On the 20th anniversary of the Apollo 11 lunar landing, President Bush set forth ambitious goals for expanding human presence in the solar system. The Space Exploration Initiative (SEI) addresses these goals beginning with Space Station Freedom, followed by a permanent return to the Moon, and a manned mission to Mars. A well designed, adaptive Telecommunications, Navigation, and Information Management (TNIM) infrastructure is vital to the success of these missions. Utilizing initial projections of user requirements, a team under the direction of NASA's Office of Space Operations developed overall architectures and point designs to implement the TNIM functions for the Lunar and Mars mission scenarios. Based on these designs, an assessment of technology alternatives for the telecommunications and information management functions was performed. This technology assessment identifies technology developments necessary to meet the telecommunications and information management system requirements for SEI. Technology requirements, technology needs and alternatives, the present level of technology readiness in each area, and a schedule for development are presented

Current status of heterojunction bipolar and high-electron mobility transistor technologies

The current status of Heterojunction Bipolar and High-Electron Mobility Transistor technology is reviewed. Applications include analog and digital circuits with focus on high power and optical communications for HBT's and millimeter-wave low-noise and power modules for HEMT's. Material choices, designs, technology, reliability issues and circuit demonstrations are addressed.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/29872/1/0000221.pd

Temperature Dependent Analytical Modeling, Simulation and Characterizations of HEMTs in Gallium Nitride Process

Research is being conducted for a high-performance building block for high frequency and high temperature applications that combine lower costs with improved performance and manufacturability. Researchers have focused their attention on new semiconductor materials for use in device technology to address system improvements. Of the contenders, silicon carbide (SiC), gallium nitride (GaN), and diamond are emerging as the front-runners. GaN-based electronic devices, AlGaN/GaN heterojunction field effect transistors (HFETs), are the leading candidates for achieving ultra-high frequency and high-power amplifiers. Recent advances in device and amplifier performance support this claim. GaN is comparable to the other prominent material options for high-performance devices. The dissertation presents the work on analytical modeling and simulation of GaN high power HEMT and MOS gate HEMT, model verification with test data and device characterization at elevated temperatures. The model takes into account the carrier mobility, the doping densities, the saturation velocity, and the thickness of different layers. Considering the GaN material processing limitations and feedback from the simulation results, an application specific AlGaN/GaN RF power HEMT structure has been proposed. The doping concentrations and the thickness of various layers are selected to provide adequate channel charge density for the proposed devices. A good agreement between the analytical model, and the experimental data is demonstrated. The proposed temperature model can operate at higher voltages and shows stable operation of the devices at higher temperatures. The investigated temperature range is from 1000K to 6000K. The temperature models include the effect of temperature variation on the threshold voltage, carrier mobility, bandgap and saturation velocity. The calculated values of the critical parameters suggest that the proposed device can operate in the GHz range for temperature up to 6000K, which indicates that the device could survive in extreme environments. The models developed in this research will not only help the wide bandgap device researchers in the device behavioral study but will also provide valuable information for circuit designers

Proceedings of the Cold Electronics Workshop

The benefits and problems of the use of cold semiconductor electronics and the research and development effort required to bring cold electronics into more widespread use were examined

The Third International Symposium on Space Terahertz Technology: Symposium proceedings

Papers from the symposium are presented that are relevant to the generation, detection, and use of the terahertz spectral region for space astronomy and remote sensing of the Earth's upper atmosphere. The program included thirteen sessions covering a wide variety of topics including solid-state oscillators, power-combining techniques, mixers, harmonic multipliers, antennas and antenna arrays, submillimeter receivers, and measurement techniques

The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.Includes bibliographical references (p. 135-140).by David Ross Greenberg.Ph.D