When self-consistency makes a difference

Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits. The slow thermal dynamics and the thermal nonlinearity should be accurately included in the model; otherwise, some response features subtly related to the detailed frequency behavior of the slow thermal dynamics would be inaccurately reproduced or completely distorted. In this contribution we show two examples, concerning current collapse in HBTs and modeling of IMPs in GaN HEMTs. Accurate thermal modeling is proved to be be made compatible with circuit-oriented CAD tools through a proper choice of system-level approximations; in the discussion we exploit a Wiener approach, but of course the strategy should be tailored to the specific problem under consideratio

Dynamic, self consistent electro-thermal simulation of power microwave devices including the effect of surface metallizations

We present an efficient simulation technique to account for the thermal spreading effects of surface metallizations in the self-consistent dynamic electro-thermal analysis of power microwave devices. Electro-thermal self-consistency is achieved by solving the coupled nonlinear system made of a temperature dependent device electrical model, and of an approximate description of the device thermal behavior through a thermal impedance matrix. The numerical solution is pursued in the frequency domain by the Harmonic Balance technique. The approach is applied to the thermal stability analysis of power AlGaAs/GaAs HBTs and the results show that metallizations have a significant impact on the occurrence of the device thermal collapse

The NASA SBIR product catalog

The purpose of this catalog is to assist small business firms in making the community aware of products emerging from their efforts in the Small Business Innovation Research (SBIR) program. It contains descriptions of some products that have advanced into Phase 3 and others that are identified as prospective products. Both lists of products in this catalog are based on information supplied by NASA SBIR contractors in responding to an invitation to be represented in this document. Generally, all products suggested by the small firms were included in order to meet the goals of information exchange for SBIR results. Of the 444 SBIR contractors NASA queried, 137 provided information on 219 products. The catalog presents the product information in the technology areas listed in the table of contents. Within each area, the products are listed in alphabetical order by product name and are given identifying numbers. Also included is an alphabetical listing of the companies that have products described. This listing cross-references the product list and provides information on the business activity of each firm. In addition, there are three indexes: one a list of firms by states, one that lists the products according to NASA Centers that managed the SBIR projects, and one that lists the products by the relevant Technical Topics utilized in NASA's annual program solicitation under which each SBIR project was selected

Assessment of thermal instabilities and oscillations in multifinger heterojunction bipolar transistors through a harmonic-balance-based CAD-oriented dynamic stability analysis technique

We present a novel analysis of thermal instabilities and oscillations in multifinger heterojunction bipolar transistors (HBTs), based on a harmonic-balance computer-aided-design (CAD)-oriented approach to the dynamic stability assessment. The stability analysis is carried out in time-periodic dynamic conditions by calculating the Floquet multipliers of the limit cycle representing the HBT working point. Such a computation is performed directly in the frequency domain, on the basis of the Jacobian of the harmonic-balance problem yielding the limit cycle. The corresponding stability assessment is rigorous, and the efficient calculation method makes it readily implementable in CAD tools, thus allowing for circuit and device optimization. Results on three- and four-finger layouts are presented, including closed-form oscillation criteria for two-finger device

Global Sensitivity Methods for Design of Experiments in Lithium-ion Battery Context

Battery management systems may rely on mathematical models to provide higher performance than standard charging protocols. Electrochemical models allow us to capture the phenomena occurring inside a lithium-ion cell and therefore, could be the best model choice. However, to be of practical value, they require reliable model parameters. Uncertainty quantification and optimal experimental design concepts are essential tools for identifying systems and estimating parameters precisely. Approximation errors in uncertainty quantification result in sub-optimal experimental designs and consequently, less-informative data, and higher parameter unreliability. In this work, we propose a highly efficient design of experiment method based on global parameter sensitivities. This novel concept is applied to the single-particle model with electrolyte and thermal dynamics (SPMeT), a well-known electrochemical model for lithium-ion cells. The proposed method avoids the simplifying assumption of output-parameter linearization (i.e., local parameter sensitivities) used in conventional Fisher information matrix-based experimental design strategies. Thus, the optimized current input profile results in experimental data of higher information content and in turn, in more precise parameter estimates.Comment: Accepted for 21st IFAC World Congres