Lithium enrichment on the single active K1-giant DI Piscium -- Possible joint origin of differential rotation and Li enrichment

We investigate the surface spot activity of the rapidly rotating, lithium-rich active single K-giant DI Psc to measure the surface differential rotation and understand the mechanisms behind the Li-enrichment. Doppler imaging was applied to recover the surface temperature distribution of DI Psc in two subsequent rotational cycles using the individual mapping lines Ca I 6439, Fe I 6430, Fe I 6421 and Li I 6708. Surface differential rotation was derived by cross-correlation of the subsequent maps. Difference maps are produced to study the uniformity of Li-enrichment on the surface. These maps are compared with the rotational modulation of the Li I 6708 line equivalent width. Doppler images obtained for the Ca and Fe mapping lines agree well and reveal strong polar spottedness, as well as cool features at lower latitudes. Cross-correlating the consecutive maps yields antisolar differential rotation with shear coefficient -0.083 +- 0.021. The difference of the average and the Li maps indicates that the lithium abundance is non-activity related. There is also a significant rotational modulation of the Li equivalent width.Comment: 8 pages, 7 figures, accepted in A&

Fast Algorithms for the computation of Fourier Extensions of arbitrary length

Fourier series of smooth, non-periodic functions on $[-1,1]$ are known to exhibit the Gibbs phenomenon, and exhibit overall slow convergence. One way of overcoming these problems is by using a Fourier series on a larger domain, say $[-T,T]$ with $T>1$, a technique called Fourier extension or Fourier continuation. When constructed as the discrete least squares minimizer in equidistant points, the Fourier extension has been shown shown to converge geometrically in the truncation parameter $N$. A fast ${\mathcal O}(N \log^2 N)$ algorithm has been described to compute Fourier extensions for the case where $T=2$, compared to ${\mathcal O}(N^3)$ for solving the dense discrete least squares problem. We present two ${\mathcal O}(N\log^2 N )$ algorithms for the computation of these approximations for the case of general $T$, made possible by exploiting the connection between Fourier extensions and Prolate Spheroidal Wave theory. The first algorithm is based on the explicit computation of so-called periodic discrete prolate spheroidal sequences, while the second algorithm is purely algebraic and only implicitly based on the theory

On the numerical stability of Fourier extensions

An effective means to approximate an analytic, nonperiodic function on a bounded interval is by using a Fourier series on a larger domain. When constructed appropriately, this so-called Fourier extension is known to converge geometrically fast in the truncation parameter. Unfortunately, computing a Fourier extension requires solving an ill-conditioned linear system, and hence one might expect such rapid convergence to be destroyed when carrying out computations in finite precision. The purpose of this paper is to show that this is not the case. Specifically, we show that Fourier extensions are actually numerically stable when implemented in finite arithmetic, and achieve a convergence rate that is at least superalgebraic. Thus, in this instance, ill-conditioning of the linear system does not prohibit a good approximation. In the second part of this paper we consider the issue of computing Fourier extensions from equispaced data. A result of Platte, Trefethen & Kuijlaars states that no method for this problem can be both numerically stable and exponentially convergent. We explain how Fourier extensions relate to this theoretical barrier, and demonstrate that they are particularly well suited for this problem: namely, they obtain at least superalgebraic convergence in a numerically stable manner

Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence

Imaging the band-to-band photoluminescence of silicon wafers is known to provide rapid and high-resolution images of the carrier lifetime. Here, we show that such photoluminescence images, taken before and after dissociation of iron-boron pairs, allow an accurate image of the interstitial iron concentration across a boron-doped p-type silicon wafer to be generated. Such iron images can be obtained more rapidly than with existing point-by-point iron mapping techniques. However, because the technique is best used at moderate illumination intensities, it is important to adopt a generalized analysis that takes account of different injection levels across a wafer. The technique has been verified via measurement of a deliberately contaminated single-crystal silicon wafer with a range of known iron concentrations. It has also been applied to directionally solidified ingot-grown multicrystalline silicon wafers made for solar cell production, which contain a detectible amount of unwanted iron. The iron images on these wafers reveal internal gettering of iron to grain boundaries and dislocated regions during ingot growth.D.M. is supported by an Australian Research Council QEII Fellowship. The Centre of Excellence for Advanced Silicon Photovoltaics and Photonics at UNSW is funded by the Australian Research Council

On the making and taking of professionalism in the further education workplace

This paper examines the changing nature of professional practice in English further education. At a time when neo-liberal reform has significantly impacted on this under-researched and over-market-tested sector, little is known about who its practitioners are and how they construct meaning in their work. Sociological interest in the field has tended to focus on further education practitioners as either the subjects of market and managerial reform or as creative agents operating within the contradictions of audit and inspection cultures. In challenging such dualism, which is reflective of wider sociological thinking, the paper examines the ways in which agency and structure combine to produce a more transformative conception of the further education professional. The approach contrasts with a prevailing policy discourse that seeks to re-professionalise and modernise further education practice without interrogating either the terms of its professionalism or the neo-liberal practices in which it resides

Texture development and coercivity enhancement in cast alnico 9 magnets

The effect of Y addition and magnetic field on texture and magnetic properties of arc-melted alnico 9 magnets has been investigated. Small additions of Y (1.5 wt.%) develop a (200) texture for the arc-melted alnico 9 magnet. Such a texture is hard to form in cast samples. To achieve this goal, we set up a high-field annealing system with a maximum operation temperature of 12500 C. This system enabled annealing in a field of 45 kOe with subsequent draw annealing for the solutionized buttons; we have been able to substantially increase remanence ratio and coercivity, from 0.70 and 1200 Oe for the Y-free alnico 0 to 0.90 and 1400 Oe for the Y-doped alnico 9, respectively. A high energy product of 7.3 MGOe has been achieved for the fully heat-treated Y-doped alnico 9. The enhancement of coercvity is believed to arise from the introduction of magnetocrystalline anisotropy from 80 nm Y2Co17- type grains, which are exchange-coupled to the main-phase alnico rods

EVALUATION OF SILICON DIODES AS IN-SITU CRYOGENIC FIELD EMISSION DETECTORS FOR SRF CAVITY DEVELOPMENT

We performed in-situ cryogenic testing of four silicon diodes as possible candidates for field emission (FE) monitors of superconducting radio frequency (SRF) cavities during qualification testing and in accelerator cryo-modules. We evaluated diodes from 2 companies - from Hamamatsu corporation model S1223-01; and from OSI Optoelectronics models OSD35-LR-A, XUV-50C, and FIL-UV20. The measurements were done by placing the diodes in superfluid liquid helium near the top of a field emitting 9-cell cavity during its vertical test. For each diode, we will discuss their viability as a 2K cryogenic detector for FE mapping of SRF cavities and the directionality of S1223-01 in such environments. We will also present calibration curves between the diodes and JLab's standard radiation detector placed above the Dewar's top plate

Bi-metal Structures Fabricated by Extrusion-based Sintering-assisted Additive Manufacturing

The additive manufacturing (AM) of bi-metal structure has received much interest because it provides compensated properties for a single metal alloy, meeting the harsh requirements for components used in key industries like aerospace, defense, energy, etc. However, fusion-based AM technologies usually induce interfacial cracks and delamination resulted from the large mismatch of coefficient of thermal expansion (CTE) between dissimilar materials, while the solid-state AM methods generate a large number of pores at the interface, requiring post-fabrication heat treatment. In this study, we aim to build high-quality 17-4 PH stainless steel and nickel alloy bi-metal structure with material extrusion AM method, followed by debinding and sintering processes. The microstructure and mechanical properties of the bi-metal structure were thoroughly investigated. The completion of this study provides a pioneering analysis of bi-metal structures built by extrusion-based sintering-assisted AM and shows a great promise for further adoption in a variety of industrial applications.https://orb.binghamton.edu/research_days_posters_2023/1038/thumbnail.jp