A micropower centroiding vision processor

Published versio

An On-chip Trainable and Clock-less Spiking Neural Network with 1R Memristive Synapses

Spiking neural networks (SNNs) are being explored in an attempt to mimic brain's capability to learn and recognize at low power. Crossbar architecture with highly scalable Resistive RAM or RRAM array serving as synaptic weights and neuronal drivers in the periphery is an attractive option for SNN. Recognition (akin to reading the synaptic weight) requires small amplitude bias applied across the RRAM to minimize conductance change. Learning (akin to writing or updating the synaptic weight) requires large amplitude bias pulses to produce a conductance change. The contradictory bias amplitude requirement to perform reading and writing simultaneously and asynchronously, akin to biology, is a major challenge. Solutions suggested in the literature rely on time-division-multiplexing of read and write operations based on clocks, or approximations ignoring the reading when coincidental with writing. In this work, we overcome this challenge and present a clock-less approach wherein reading and writing are performed in different frequency domains. This enables learning and recognition simultaneously on an SNN. We validate our scheme in SPICE circuit simulator by translating a two-layered feed-forward Iris classifying SNN to demonstrate software-equivalent performance. The system performance is not adversely affected by a voltage dependence of conductance in realistic RRAMs, despite departing from linearity. Overall, our approach enables direct implementation of biological SNN algorithms in hardware

Neuromorphic In-Memory Computing Framework using Memtransistor Cross-bar based Support Vector Machines

This paper presents a novel framework for designing support vector machines (SVMs), which does not impose restriction on the SVM kernel to be positive-definite and allows the user to define memory constraint in terms of fixed template vectors. This makes the framework scalable and enables its implementation for low-power, high-density and memory constrained embedded application. An efficient hardware implementation of the same is also discussed, which utilizes novel low power memtransistor based cross-bar architecture, and is robust to device mismatch and randomness. We used memtransistor measurement data, and showed that the designed SVMs can achieve classification accuracy comparable to traditional SVMs on both synthetic and real-world benchmark datasets. This framework would be beneficial for design of SVM based wake-up systems for internet of things (IoTs) and edge devices where memtransistors can be used to optimize system's energy-efficiency and perform in-memory matrix-vector multiplication (MVM).Comment: 4 pages, 5 figures, MWSCAS 201

CMOS-3D smart imager architectures for feature detection

This paper reports a multi-layered smart image sensor architecture for feature extraction based on detection of interest points. The architecture is conceived for 3-D integrated circuit technologies consisting of two layers (tiers) plus memory. The top tier includes sensing and processing circuitry aimed to perform Gaussian filtering and generate Gaussian pyramids in fully concurrent way. The circuitry in this tier operates in mixed-signal domain. It embeds in-pixel correlated double sampling, a switched-capacitor network for Gaussian pyramid generation, analog memories and a comparator for in-pixel analog-to-digital conversion. This tier can be further split into two for improved resolution; one containing the sensors and another containing a capacitor per sensor plus the mixed-signal processing circuitry. Regarding the bottom tier, it embeds digital circuitry entitled for the calculation of Harris, Hessian, and difference-of-Gaussian detectors. The overall system can hence be configured by the user to detect interest points by using the algorithm out of these three better suited to practical applications. The paper describes the different kind of algorithms featured and the circuitry employed at top and bottom tiers. The Gaussian pyramid is implemented with a switched-capacitor network in less than 50 μs, outperforming more conventional solutions.Xunta de Galicia 10PXIB206037PRMinisterio de Ciencia e Innovación TEC2009-12686, IPT-2011-1625-430000Office of Naval Research N00014111031

Significance Driven Hybrid 8T-6T SRAM for Energy-Efficient Synaptic Storage in Artificial Neural Networks

Multilayered artificial neural networks (ANN) have found widespread utility in classification and recognition applications. The scale and complexity of such networks together with the inadequacies of general purpose computing platforms have led to a significant interest in the development of efficient hardware implementations. In this work, we focus on designing energy efficient on-chip storage for the synaptic weights. In order to minimize the power consumption of typical digital CMOS implementations of such large-scale networks, the digital neurons could be operated reliably at scaled voltages by reducing the clock frequency. On the contrary, the on-chip synaptic storage designed using a conventional 6T SRAM is susceptible to bitcell failures at reduced voltages. However, the intrinsic error resiliency of NNs to small synaptic weight perturbations enables us to scale the operating voltage of the 6TSRAM. Our analysis on a widely used digit recognition dataset indicates that the voltage can be scaled by 200mV from the nominal operating voltage (950mV) for practically no loss (less than 0.5%) in accuracy (22nm predictive technology). Scaling beyond that causes substantial performance degradation owing to increased probability of failures in the MSBs of the synaptic weights. We, therefore propose a significance driven hybrid 8T-6T SRAM, wherein the sensitive MSBs are stored in 8T bitcells that are robust at scaled voltages due to decoupled read and write paths. In an effort to further minimize the area penalty, we present a synaptic-sensitivity driven hybrid memory architecture consisting of multiple 8T-6T SRAM banks. Our circuit to system-level simulation framework shows that the proposed synaptic-sensitivity driven architecture provides a 30.91% reduction in the memory access power with a 10.41% area overhead, for less than 1% loss in the classification accuracy.Comment: Accepted in Design, Automation and Test in Europe 2016 conference (DATE-2016

Tensor Computation: A New Framework for High-Dimensional Problems in EDA

Many critical EDA problems suffer from the curse of dimensionality, i.e. the very fast-scaling computational burden produced by large number of parameters and/or unknown variables. This phenomenon may be caused by multiple spatial or temporal factors (e.g. 3-D field solvers discretizations and multi-rate circuit simulation), nonlinearity of devices and circuits, large number of design or optimization parameters (e.g. full-chip routing/placement and circuit sizing), or extensive process variations (e.g. variability/reliability analysis and design for manufacturability). The computational challenges generated by such high dimensional problems are generally hard to handle efficiently with traditional EDA core algorithms that are based on matrix and vector computation. This paper presents "tensor computation" as an alternative general framework for the development of efficient EDA algorithms and tools. A tensor is a high-dimensional generalization of a matrix and a vector, and is a natural choice for both storing and solving efficiently high-dimensional EDA problems. This paper gives a basic tutorial on tensors, demonstrates some recent examples of EDA applications (e.g., nonlinear circuit modeling and high-dimensional uncertainty quantification), and suggests further open EDA problems where the use of tensor computation could be of advantage.Comment: 14 figures. Accepted by IEEE Trans. CAD of Integrated Circuits and System

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis

Towards a bio-inspired mixed-signal retinal processor

Published versio