High-Efficiency Low-Voltage Rectifiers for Power Scavenging Systems

Abstract Rectifiers are commonly used in electrical energy conversion chains to transform the energy obtained from an AC signal source to a DC level. Conventional bridge and gate cross-coupled rectifier topologies are not sufficiently power efficient, particularly when input amplitudes are low. Depending on their rectifying element, their power efficiency is constrained by either the forward-bias voltage drop of a diode or the threshold voltage of a diode-connected MOS transistor. Advanced passive rectifiers use threshold cancellation techniques to effectively reduce the threshold voltage of MOS diodes. Active rectifiers use active circuits to control the conduction angle of low-loss MOS switches. In this thesis, an active rectifier with a gate cross-coupled topology is proposed, which replaces the diode-connected MOS transistors of a conventional rectifier with low-loss MOS switches. Using the inherent characteristics of MOS transistors as comparators, dynamic biasing of the bulks of main switches and small pull-up transistors, the proposed self-supplied active rectifier exhibits smaller voltage drop across the main switches leading to a higher power efficiency compared to conventional rectifier structures for a wide range of operating frequencies in the MHz range. Delivery of high load currents is another feature of the proposed rectifier. Using the bootstrapping technique, single- and double-reservoir based rectifiers are proposed. They present higher power and voltage conversion efficiencies compared to conventional rectifier structures. With a source amplitude of 3.3 V, when compared to the gate cross-coupled topology, the proposed active rectifier offers power and voltage conversion efficiencies improved by up to 10% and 16% respectively. The proposed rectifier using the bootstrap technique, including double- and single-reservoir schemes, are well suited for very low input amplitudes. They present power and voltage conversion efficiencies of 75% and 76% at input amplitude of 1.0 V and maintain their high efficiencies over input amplitudes greater than 1.0V. Single-reservoir bootstrap rectifier also reduces die area by 70% compared to its double-reservoir counterpart.---------Résumé Les redresseurs sont couramment utilisés dans de nombreux systèmes afin de transformer l'énergie électrique obtenue à partir d'une source alternative en une alimentation continue. Les topologies traditionnelles telles que les ponts de diodes et les redresseurs se servant de transistors à grilles croisées-couplées ne sont pas suffisamment efficaces en terme d’énergie, en particulier pour des signaux à faibles amplitudes. Dépendamment de leur élément de redressement, leur efficacité en termes de consommation d’énergie est limitée soit par la chute de tension de polarisation directe d'une diode, soit par la tension de seuil du transistor MOS. Les redresseurs passifs avancés utilisent une technique de conception pour réduire la tension de seuil des diodes MOS. Les redresseurs actifs utilisent des circuits actifs pour contrôler l'angle de conduction des commutateurs MOS à faible perte. Dans cette thèse, nous avons proposé un redresseur actif avec une topologie en grille croisée-couplée. Elle utilise des commutateurs MOS à faible perte à la place des transistors MOS connectés en diode comme redresseurs. Le circuit proposé utilise: des caractéristiques intrinsèques des transistors MOS pour les montages comparateurs et une polarisation dynamique des substrats des commutateurs principaux supportés par de petits transistors de rappel. Le redresseur proposé présente des faibles chutes de tension à travers le commutateur principal menant à une efficacité de puissance plus élevée par rapport aux structures d’un redresseur conventionnel pour une large gamme de fréquences de fonctionnement de l’ordre des MHz. La conduction des courants de charge élevée est une autre caractéristique du redresseur proposé. En utilisant la méthode de bootstrap, des redresseurs à simple et à double réservoir sont proposés. Ils présentent une efficacité de puissance et un rapport de conversion de tension élevés en comparaison avec les structures des redresseurs conventionnels. Avec une amplitude de source de 3,3 V, le redresseur proposé offre des efficacités de puissance et de conversion de tension améliorées par rapport au circuit à transistors croisés couplés. Ces améliorations atteignent 10% et 16% respectivement. Les redresseurs proposés utilisent la technique de bootstrap. Ils sont bien adaptés pour des amplitudes d'entrée très basses. À une amplitude d'entrée de 1,0 V, ces derniers redresseurs présentent des rendements de conversion de puissance et de tension de 75% et 76%. Le redresseur à simple réservoir réduit également l’aire de silicium requise de 70% par rapport à la version à double-réservoir

Highly Integrated Dc-dc Converters

A monolithically integrated smart rectifier has been presented first in this work. The smart rectifier, which integrates a power MOSFET, gate driver and control circuitry, operates in a self-synchronized fashion based on its drain-source voltage, and does not need external control input. The analysis, simulation, and design considerations are described in detail. A 5V, 5-µm CMOS process was used to fabricate the prototype. Experimental results show that the proposed rectifier functions as expected in the design. Since no dead-time control needs to be used to switch the sync-FET and ctrl-FET, it is expected that the body diode losses can be reduced substantially, compared to the conventional synchronous rectifier. The proposed self-synchronized rectifier (SSR) can be operated at high frequencies and maintains high efficiency over a wide load range. As an example of the smart rectifier\u27s application in isolated DC-DC converter, a synchronous flyback converter with SSR is analyzed, designed and tested. Experimental results show that the operating frequency could be as high as 4MHz and the efficiency could be improved by more than 10% compared to that when a hyper fast diode rectifier is used. Based on a new current-source gate driver scheme, an integrated gate driver for buck converter is also developed in this work by using a 0.35µm CMOS process with optional high voltage (50V) power MOSFET. The integrated gate driver consists both the current-source driver for high-side power MOSFET and low-power driver for low-side power iv MOSFET. Compared with the conventional gate driver circuit, the current-source gate driver can recovery some gate charging energy and reduce switching loss. So the current-source driver (CSD) can be used to improve the efficiency performance in high frequency power converters. This work also presents a new implementation of a power supply in package (PSiP) 5MHz buck converter, which is different from all the prior-of-art PSiP solutions by using a high-Q bondwire inductor. The high-Q bondwire inductor can be manufactured by applying ferrite epoxy to the common bondwire during standard IC packaging process, so the new implementation of PSiP is expected to be a cost-effective way of power supply integration

Design Of Low-capacitance And High-speed Electrostatic Discharge (esd) Devices For Low-voltage Protection Applications

Electrostatic discharge (ESD) is defined as the transfer of charge between bodies at different potentials. The electrostatic discharge induced integrated circuit damages occur throughout the whole life of a product from the manufacturing, testing, shipping, handing, to end user operating stages. This is particularly true as microelectronics technology continues shrink to nano-metric dimensions. The ESD related failures is a major IC reliability concern and results in a loss of millions dollars to the semiconductor industry each year. Several ESD stress models and test methods have been developed to reproduce the real world ESD discharge events and quantify the sensitivity of ESD protection structures. The basic ESD models are: Human body model (HBM), Machine model (MM), and Charged device model (CDM). To avoid or reduce the IC failure due to ESD, the on-chip ESD protection structures and schemes have been implemented to discharge ESD current and clamp overstress voltage under different ESD stress events. Because of its simple structure and good performance, the junction diode is widely used in on-chip ESD protection applications. This is particularly true for ESD protection of lowvoltage ICs where a relatively low trigger voltage for the ESD protection device is required. However, when the diode operates under the ESD stress, its current density and temperature are far beyond the normal conditions and the device is in danger of being damaged. For the design of effective ESD protection solution, the ESD robustness and low parasitic capacitance are two major concerns. The ESD robustness is usually defined after the failure current It2 and on-state resistance Ron. The transmission line pulsing (TLP) measurement is a very effective tool for evaluating the ESD robustness of a circuit or single element. This is particularly helpful in iv characterizing the effect of HBM stress where the ESD-induced damages are more likely due to thermal failures. Two types of diodes with different anode/cathode isolation technologies will be investigated for their ESD performance: one with a LOCOS (Local Oxidation of Silicon) oxide isolation called the LOCOS-bound diode, the other with a polysilicon gate isolation called the polysilicon-bound diode. We first examine the ESD performance of the LOCOS-bound diode. The effects of different diode geometries, metal connection patterns, dimensions and junction configurations on the ESD robustness and parasitic capacitance are investigated experimentally. The devices considered are N+/P-well junction LOCOS-bound diodes having different device widths, lengths and finger numbers, but the approach applies generally to the P+/N-well junction diode as well. The results provide useful insights into optimizing the diode for robust HBM ESD protection applications. Then, the current carrying and voltage clamping capabilities of LOCOS- and polysiliconbound diodes are compared and investigated based on both TCAD simulation and experimental results. Comparison of these capabilities leads to the conclusion that the polysilicon-bound diode is more suited for ESD protection applications due to its higher performance. The effects of polysilicon-bound diode’s design parameters, including the device width, anode/cathode length, finger number, poly-gate length, terminal connection and metal topology, on the ESD robustness are studied. Two figures of merits, FOM_It2 and FOM_Ron, are developed to better assess the effects of different parameters on polysilicon-bound diode’s overall ESD performance. As latest generation package styles such as mBGAs, SOTs, SC70s, and CSPs are going to the millimeter-range dimensions, they are often effectively too small for people to handle with fingers. The recent industry data indicates the charged device model (CDM) ESD event becomes v increasingly important in today’s manufacturing environment and packaging technology. This event generates highly destructive pulses with a very short rise time and very small duration. TLP has been modified to probe CDM ESD protection effectiveness. The pulse width was reduced to the range of 1-10 ns to mimic the very fast transient of the CDM pulses. Such a very fast TLP (VFTLP) testing has been used frequently for CDM ESD characterization. The overshoot voltage and turn-on time are two key considerations for designing the CDM ESD protection devices. A relatively high overshoot voltage can cause failure of the protection devices as well as the protected devices, and a relatively long turn-on time may not switch on the protection device fast enough to effectively protect the core circuit against the CDM stress. The overshoot voltage and turn-on time of an ESD protection device can be observed and extracted from the voltage versus time waveforms measured from the VFTLP testing. Transient behaviors of polysilicon-bound diodes subject to pulses generated by the VFTLP tester are characterized for fast ESD events such as the charged device model. The effects of changing devices’ dimension parameters on the transient behaviors and on the overshoot voltage and turn-on time are studied. The correlation between the diode failure and poly-gate configuration under the VFTLP stress is also investigated. Silicon-controlled rectifier (SCR) is another widely used ESD device for protecting the I/O pins and power supply rails of integrated circuits. Multiple fingers are often needed to achieve optimal ESD protection performance, but the uniformity of finger triggering and current flow is always a concern for multi-finger SCR devices operating under the post-snapback region. Without a proper understanding of the finger turn-on mechanism, design and realization of robust SCRs for ESD protection applications are not possible. Two two-finger SCRs with different combinations of anode/cathode regions are considered, and their finger turn-on vi uniformities are analyzed based on the I-V characteristics obtained from the transmission line pulsing (TLP) tester. The dV/dt effect of pulses with different rise times on the finger turn-on behavior of the SCRs are also investigated experimentally. In this work, unless noted otherwise, all the measurements are conducted using the Barth 4002 transmission line pulsing (TLP) and Barth 4012 very-fast transmission line pulsing (VFTLP) testers

Design, Characterization And Analysis Of Electrostatic Discharge (esd) Protection Solutions In Emerging And Modern Technologies

Electrostatic Discharge (ESD) is a significant hazard to electronic components and systems. Based on a specific processing technology, a given circuit application requires a customized ESD consideration that includes the devices’ operating voltage, leakage current, breakdown constraints, and footprint. As new technology nodes mature every 3-5 years, design of effective ESD protection solutions has become more and more challenging due to the narrowed design window, elevated electric field and current density, as well as new failure mechanisms that are not well understood. The endeavor of this research is to develop novel, effective and robust ESD protection solutions for both emerging technologies and modern complementary metal–oxide–semiconductor (CMOS) technologies. The Si nanowire field-effect transistors are projected by the International Technology Roadmap for Semiconductors as promising next-generation CMOS devices due to their superior DC and RF performances, as well as ease of fabrication in existing Silicon processing. Aiming at proposing ESD protection solutions for nanowire based circuits, the dimension parameters, fabrication process, and layout dependency of such devices under Human Body Mode (HBM) ESD stresses are studied experimentally in company with failure analysis revealing the failure mechanism induced by ESD. The findings, including design methodologies, failure mechanism, and technology comparisons should provide practical knowhow of the development of ESD protection schemes for the nanowire based integrated circuits. Organic thin-film transistors (OTFTs) are the basic elements for the emerging flexible, printable, large-area, and low-cost organic electronic circuits. Although there are plentiful studies focusing on the DC stress induced reliability degradation, the operation mechanism of OTFTs iv subject to ESD is not yet available in the literature and are urgently needed before the organic technology can be pushed into consumer market. In this work, the ESD operation mechanism of OTFT depending on gate biasing condition and dimension parameters are investigated by extensive characterization and thorough evaluation. The device degradation evolution and failure mechanism under ESD are also investigated by specially designed experiments. In addition to the exploration of ESD protection solutions in emerging technologies, efforts have also been placed in the design and analysis of a major ESD protection device, diodetriggered-silicon-controlled-rectifier (DTSCR), in modern CMOS technology (90nm bulk). On the one hand, a new type DTSCR having bi-directional conduction capability, optimized design window, high HBM robustness and low parasitic capacitance are developed utilizing the combination of a bi-directional silicon-controlled-rectifier and bi-directional diode strings. On the other hand, the HBM and Charged Device Mode (CDM) ESD robustness of DTSCRs using four typical layout topologies are compared and analyzed in terms of trigger voltage, holding voltage, failure current density, turn-on time, and overshoot voltage. The advantages and drawbacks of each layout are summarized and those offering the best overall performance are suggested at the en

Efficient power conversion interface circuits for energy harvesting applications

Harvesting energy from the environment for powering micro-power devices have been increasing in popularity. These types of devices can be used in embedded applications or in sensor networks where battery replacement is impractical. In this dissertation, different methods of energy harvesting from the environment are explored as alternative sources of energy for devices. Some of the most popular energy extraction used in electronic devices today are radio frequency (RF) and thermal/vibrational energy extraction. This dissertation presents novel power techniques that enable some of the most efficient power conversion circuits published to date. New power conversion circuits to interface to a piezoelectric micro-power generator that produces electrical energy from temperature differences have been fabricated and tested. Circuit designs and measurement results are presented for a half-wave synchronous rectifier with voltage doubler, a full-wave synchronous rectifier and a passive full-wave rectifier circuit. The active rectifier based on synchronous rectification, fabricated in a 0.25-μm CMOS process, is 86% efficient with 22-μW peak output power when connected to the piezoelectric micro-power generator. This gives the highest efficiency to date for active rectification circuits at the micro-power level. The passive rectifier circuit is 66% efficient with 16-μW peak output power and requires no quiescent current to operate. RF-powered devices are typically inductively coupled and extract their energy from the near field while operating within a few inches of the radiating source. Longer operating distances, exceeding 10 meters, are desired for a broader set of applications including distributed sensor networks. This dissertation describes an efficient method for far field power extraction from RF energy to enable long distance passively powered sensor networks. Passive rectifier circuits are designed in the TSMC 0.25μm mixed-signal CMOS process and antennas for the system are printed on a 4-layer FR4 board. A high-Q resonator is used with a matching network to passively amplify the input voltage to the rectifier. At the circuit level, floating gate transistors are used as rectifying diodes to reduce the diode threshold loss in voltage rectification and therefore increase the rectifier efficiency. A 36-stage rectifier fabricated in a 0.25-μm CMOS process attains an efficiency of over 60% in the far field with a received power sensitivity of 5.5μW(-22.6 dBm), corresponding to an operating distance of 44 meters. The effective threshold voltage of the floating-gate diode is reduced to 36 mV. This is the highest performance for far-field RF energy conversion reported to date. In ultra-low energy system, such as sensor networks, it is essential that power management circuitry are designed to dissipate very low quiescent power. RF energy and power management circuits are designed in a 0.18μm CMOS process. Voltage regulators are designed to operate at high input voltage and low power in a standard CMOS process. The voltage regulators can withstand input voltages up to 12 volts and dissipates from 90 nW to 1.4 μW of power. A floating-gate programming circuit is designed with a self-wakeup timer that turns itself on about once a month. The floating-gate programming circuits dissipates about 30 nW in sleep mode and 8 μW in active mode

Energy Harvesting for Self-Powered Wireless Sensors

A wireless sensor system is proposed for a targeted deployment in civil infrastructures (namely bridges) to help mitigate the growing problem of deterioration of civil infrastructures. The sensor motes are self-powered via a novel magnetic shape memory alloy (MSMA) energy harvesting material and a low-frequency, low-power rectifier multiplier (RM). Experimental characterizations of the MSMA device and the RM are presented. A study on practical implementation of a strain gauge sensor and its application in the proposed sensor system are undertaken and a low-power successive approximation register analog-to-digital converter (SAR ADC) is presented. The SAR ADC was fabricated and laboratory characterizations show the proposed low-voltage topology is a viable candidate for deployment in the proposed sensor system. Additionally, a wireless transmitter is proposed to transmit the SAR ADC output using on-off keying (OOK) modulation with an impulse radio ultra-wideband (IR-UWB) transmitter (TX). The RM and SAR ADC were fabricated in ON 0.5 micrometer CMOS process. An alternative transmitter architecture is also presented for use in the 3-10GHz UWB band. Unlike the IR-UWB TX described for the proposed wireless sensor system, the presented transmitter is designed to transfer large amounts of information with little concern for power consumption. This second method of data transmission divides the 3-10GHz spectrum into 528MHz sub-bands and "hops" between these sub-bands during data transmission. The data is sent over these multiple channels for short distances (?3-10m) at data rates over a few hundred million bits per second (Mbps). An UWB TX is presented for implementation in mode-I (3.1-4.6GHz) UWB which utilizes multi-band orthogonal frequency division multiplexing (MB-OFDM) to encode the information. The TX was designed and fabricated using UMC 0.13 micrometer CMOS technology. Measurement results and theoretical system level budgeting are presented for the proposed UWB TX

Ultra low power circuits for a miniature apnoea detection device

Imperial Users onl

ANALYSIS AND DESIGN OF CONTINUOUS INPUT CURRENT MULTIPHASE INTERLEAVED BUCK CONVERTER

The power requirements for microprocessors have been increasing per Moore\u27s Law. According to International Technology Roadmap (ITRS), Voltage Regulator Module (VRM) for microprocessors will be about 200 W at 1 V output in 2010. With the VRM’s topology of synchronous buck, serious technical challenges such as small duty cycle, high switching frequencies, and higher current demands, contribute to decreased power density and increased cost. This thesis proposes a Continuous Input Current Multiphase Interleaved Buck topology to solve the technical challenges of powering future microprocessors. This new topology is aimed to improve past topologies by providing continuous input current and improved efficiency. An open loop system of the proposed new topology is simulated using OrCAD PSpice to evaluate the performance criteria of the VRM. A hardware prototype of a four-phase Continuous Input Current Multiphase Interleaved Buck Converter is constructed and tested to assess the targeted improvements

Emerging Artificial Two-Dimensional van der Waals Heterostructures for Optoelectronics

Two-dimensional (2D) materials are attracting explosive attention for their intriguing potential in versatile applications, covering optoelectronics, electronics, sensors, etc. An attractive merit of 2D materials is their viable van der Waals (VdW) stacking in artificial sequence, thus forming different atomic arrangements in vertical direction and enabling unprecedented tailoring of material properties and device application. In this chapter, we summarize the latest progress in assembling VdW heterostructures for optoelectronic applications by beginning with the basic pick-transfer method for assembling 2D materials and then discussing the different combination of 2D materials of semiconductor, conductor, and insulator properties for various optoelectronic devices, e.g., photodiode, phototransistors, optical memories, etc