Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures

Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles and free charges on polarization dynamics are specifically explored. The intrinsic field effects, which originated at the ferroelectric-semiconductor interface, lead to the surface band bending and result into the formation of depletion space-charge layer near the semiconductor surface. During the local polarization reversal (caused by the inhomogeneous electric field induced by the nanosized tip of the Scanning Probe Microscope (SPM) probe) the thickness and charge of the interface layer drastically changes, it particular the sign of the screening carriers is determined by the polarization direction. Obtained analytical solutions could be extended to analyze polarization-mediated electronic transport.Comment: 35 pages, 12 figures, 1 table, 2 appendices, to be submitted to Phys. Rev.

A simple electrostatic model applicable to biomolecular recognition

An exact, analytic solution for a simple electrostatic model applicable to biomolecular recognition is presented. In the model, a layer of high dielectric constant material (representative of the solvent, water) whose thickness may vary separates two regions of low dielectric constant material (representative of proteins, DNA, RNA, or similar materials), in each of which is embedded a point charge. For identical charges, the presence of the screening layer always lowers the energy compared to the case of point charges in an infinite medium of low dielectric constant. Somewhat surprisingly, the presence of a sufficiently thick screening layer also lowers the energy compared to the case of point charges in an infinite medium of high dielectric constant. For charges of opposite sign, the screening layer always lowers the energy compared to the case of point charges in an infinite medium of either high or low dielectric constant. The behavior of the energy leads to a substantially increased repulsive force between charges of the same sign. The repulsive force between charges of opposite signs is weaker than in an infinite medium of low dielectric constant material but stronger than in an infinite medium of high dielectric constant material. The presence of this behavior, which we name asymmetric screening, in the simple system presented here confirms the generality of the behavior that was established in a more complicated system of an arbitrary number of charged dielectric spheres in an infinite solvent.Comment: 15 pages, 6 figure

Extended Classical Over-Barrier Model for Collisions of Highly Charged Ions with Conducting and Insulating Surfaces

We have extended the classical over-barrier model to simulate the neutralization dynamics of highly charged ions interacting under grazing incidence with conducting and insulating surfaces. Our calculations are based on simple model rates for resonant and Auger transitions. We include effects caused by the dielectric response of the target and, for insulators, localized surface charges. Characteristic deviations regarding the charge transfer processes from conducting and insulating targets to the ion are discussed. We find good agreement with previously published experimental data for the image energy gain of a variety of highly charged ions impinging on Au, Al, LiF and KI crystals.Comment: 32 pages http://pikp28.uni-muenster.de/~ducree

Towards time-dependent, non-equilibrium charge-transfer force fields: Contact electrification and history-dependent dissociation limits

Force fields uniquely assign interatomic forces for a given set of atomic coordinates. The underlying assumption is that electrons are in their quantum-mechanical ground state or in thermal equilibrium. However, there is an abundance of cases where this is unjustified because the system is only locally in equilibrium. In particular, the fractional charges of atoms, clusters, or solids tend to not only depend on atomic positions but also on how the system reached its state. For example, the charge of an isolated solid -- and thus the forces between atoms in that solid -- usually depends on the counterbody with which it has last formed contact. Similarly, the charge of an atom, resulting from the dissociation of a molecule, can differ for different solvents in which the dissociation took place. In this paper we demonstrate that such charge-transfer history effects can be accounted for by assigning discrete oxidation states to atoms. With our method, an atom can donate an integer charge to another, nearby atom to change its oxidation state as in a redox reaction. In addition to integer charges, atoms can exchange "partial charges" which are determined with the split charge equilibration method.Comment: 11 pages, 7 figure

Electroluminescence excitation mechanisms in an epoxy resin under divergent and uniform field

Electroluminescence excitation mechanisms have been investigated in epoxy resin under divergent and uniform field situations. Metallic wires embedded in the resin were used to produce field divergence whereas film samples were metallised to obtain a uniform field. Electroluminescence under divergent field was stimulated by an impulse voltage. Light was emitted on the positive and negative fronts of the square pulses when the field exceeded 20 kV/mm at the wire surface, with equal intensity and without polarity dependence. There was evidence of space charge accumulation around the wires in multiple-pulse experiments. Charge injection and extraction occurring at both fronts of the pulse provide the condition for EL excitation. Further excitation of the EL during the plateau of the voltage pulse is prevented by the opposite field of the trapped charge. Field computation with and without space charge supports the proposed interpretation. A DC voltage was used for the uniform field experiments. A continuous level of electroluminescence is found at 175 kV/mm. Charging/discharging current measurements and space charge profile analyses using the pulsed electro-acoustic (PEA) technique were performed at different fields up to the EL level. Dipolar orientation generates a long lasting transient current that prevents the conduction level being reached within the experimental protocol (one hour poling time). The continuous EL emission is nevertheless associated with a regime where the conduction becomes dominant over the orientational polarization. Polarization and space charge contribute to the PEA charge profiles. Homo-charge injection at anode and cathode is seen at 20 kV/mm and a penetration of positive space charge in the bulk is detected above 100 kV/mm, suggesting an excitation of the continuous EL by bipolar charge recombination

Surface potential at a ferroelectric grain due to asymmetric screening of depolarization fields

Nonlinear screening of electric depolarization fields, generated by a stripe domain structure in a ferroelectric grain of a polycrystalline material, is studied within a semiconductor model of ferroelectrics. It is shown that the maximum strength of local depolarization fields is rather determined by the electronic band gap than by the spontaneous polarization magnitude. Furthermore, field screening due to electronic band bending and due to presence of intrinsic defects leads to asymmetric space charge regions near the grain boundary, which produce an effective dipole layer at the surface of the grain. This results in the formation of a potential difference between the grain surface and its interior of the order of 1 V, which can be of either sign depending on defect transition levels and concentrations. Exemplary acceptor doping of BaTiO3 is shown to allow tuning of the said surface potential in the region between 0.1 and 1.3 V.Comment: 14 pages, 11 figures, submitted to J. Appl. Phy