Analog/RF Circuit Design Techniques for Nanometerscale IC Technologies

CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures. One strategy to deal with the use of lower supply voltages is to operate critical parts at higher supply voltages, by exploiting combinations of thin- and thick-oxide transistors. Alternatively, low voltage circuit techniques are successfully developed. In order to benefit from nanometer scale CMOS technology, more functionality is shifted to the digital domain, including parts of the RF circuits. At the same time, analog control for digital and digital control for analog emerges to deal with current and upcoming imperfections

Reduction of 1/f Noise in MOSFETS by Switched Bias Techniques

Switched Biasing is presented as a technique for reducing the 1/f noise in MOSFETS. It exploits an intriguing physical effect: cycling a MOS transistor from strong inversion to accumulation reduces its 1/f noise!! The history of the discovery of the effect and the main experimental results obtained so far will be reviewed

Integrated chaos generators

This paper surveys the different design issues, from mathematical model to silicon, involved on the design of integrated circuits for the generation of chaotic behavior.Comisión Interministerial de Ciencia y Tecnología 1FD97-1611(TIC)European Commission ESPRIT 3110