Analysis of error mechanisms in switched-current Sigma-Delta modulators

El pdf del artículo es la versión post-print.This paper presents a systematic analysis of the major switched-current (SI) errors and their influence on the performance degradation of ΣΔ Modulators (ΣΔMs). The study is presented in a hierarchical systematic way. First, the physical mechanisms behind SI errors are explained and a precise modeling of the memory cell is derived. Based on this modeling, the analysis is extended to other circuits of higher level in the modulator hierarchy such as integrators and resonators. After that, the study is extended to the modulator level, considering two fundamental architectures: a 2nd-order LowPass ΣΔM (2nd-LPΣΔM) and a 4th-order BandPass ΣΔM (4th-BPΣΔM). The noise shaping degradation caused by the linear part of SI errors is studied in the first part of the paper. This study classifies SI non-idealities in different categories depending on how they modify the zeroes of the quantization noise transfer function. As a result, closed-form expressions are found for the degradation of the signal-to-noise ratio and for the change of the notch frequency position in the case of 4th-BPΣΔMs. The analysis is treated considering both the isolated and the cumulative effect of errors. In the second part of the paper the impact of non-linear errors on the modulator performance is investigated. Closed-form expressions are derived for the third-order harmonic distortion and the third-order intermodulation distortion at the output of the modulator as a function of the different error mechanisms. In addition to the mentioned effects, thermal noise is also considered. The most significant noise sources of SI ΣΔMs are identified and their contributions to the input equivalent noise are calculated. All these analyses have been validated by SPICE electrical simulations at the memory cell level and by time-domain behavioural simulations at the modulator level. As an experimental illustration, measurements taken from a 0.8 μm CMOS SI 4th-BPΣΔM silicon prototype validate our approach.This work has been partially supported by the EU ESPRIT Program in the framework of the Project IST 2001-34283 (TAMES-2), and by the Spanish CICYT under contract TIC2001-0929 (ADAVERE).Peer reviewe

Analysis and Modeling of the Non-Linear Sampling Process in Switched-Current Circuits - Application to Bandpass Sigma-Delta Modulators

This paper presents a precise model for the transient behaviour of Fully Differential (FD) SwItched-current (SI) memory cells placed at the front-end of high-speed A/D interfaces. This model allows us to analyze the main errors associated to the S/H process, namely: excess transfer-function delay and harmonic distortion. For the latter, the analysis is extended to BandPass Σ∆ Modulators (BP-Σ∆Ms) and a closed-form expression is derived for the third-order intermodulation distortion. Time-domain simulations and experimental measurements taken from a 0.8µm CMOS 4th-order BP-Σ∆M silicon prototype validate our approach

Design of a 125 mhz tunable continuous-time bandpass modulator for wireless IF applications

Bandpass sigma-delta modulators combine oversampling and noise shaping to get very high resolution in a limited bandwidth. They are widely used in applications that require narrowband high-resolution conversion at high frequencies. In recent years interests have been seen in wireless system and software radio using sigma-delta modulators to digitize signals near the front end of radio receivers. Such applications necessitate clocking the modulators at a high frequency (MHz or above). Therefore a loop filter is required in continuous-time circuits (e.g., using transconductors and integrators) rather than discretetime circuits (e.g., using switched capacitors) where the maximum clocking rate is limited by the bandwidth of Opamp, switchÂs speed and settling-time of the circuitry. In this work, the design of a CMOS fourth-order bandpass sigma-delta modulator clocking at 500 MHz for direct conversion of narrowband signals at 125 MHz is presented. A new calibration scheme is proposed for the best signal-to-noise-distortion-ratio (SNDR) of the modulator. The continuous-time loop filter is based on Gm-C resonators. A novel transconductance amplifier has been developed with high linearity at high frequency. Qfactor of filter is enhanced by tunable negative impedance which cancels the finite output impendence of OTA. The fourth-order modulator is implemented using 0.35 mm triplemetal standard analog CMOS technology. Postlayout simulation in CADENCE demonstrates that the modulator achieves a SNDR of 50 dB (~8 bit) performance over a 1 MHz bandwidth. The modulatorÂs power consumption is 302 mW from supply power of ± 1.65V

Bandpass delta-sigma modulators for radio receivers

This thesis concerns discrete-time (DT) bandpass (BP) ΔΣ modulators targeted for intermediate frequency (IF) analog-to-digital (A/D) conversion in radio receivers. The receiver architecture adopted has to be capable of operating with different radio frequencies, channel bandwidths, and modulation techniques. This is necessary in order to achieve an extensive operating area and the possibility of utilizing a local mobile phone standard or a standard suitable for a specific service. The digital IF receiver is a good choice for a multi-mode and multi-band mobile phone receiver, because the signal demodulation and channel filtering are performed in the digital domain. This increases the flexibility of the receiver and relieves the design of the baseband part, but an A/D conversion with high dynamic range and low power dissipation is required. BP ΔΣ modulators are capable of converting a high-frequency narrow band signal and are therefore suitable for signal digitization in an IF receiver. First, the theory of BP ΔΣ modulators is introduced. It has been determined that resonators are the most critical circuit blocks in the implementation of a high performance BP ΔΣ modulator. Different DT resonator topologies are studied and a double-delay (DD) resonator is found to be the best candidate for a high quality resonator. A new DD switched-capacitor (SC) resonator structure has been designed. Furthermore, two evolution versions of the designed SC resonator are presented and their nonidealities are analyzed. The three designed DD SC resonator structures are a main point of the thesis, together with the experimental results. Five different DT BP ΔΣ modulator circuit structures have been implemented and measured. All three of the designed SC resonators are used in the implemented circuits. The experimental work consists of both single-bit and multi-bit structures, as well as both single-loop and cascade architectures. The circuits have been implemented with a 0.35 μm (Bi)CMOS technology and operate with a 3.0 V supply. The measured maximum signal-to-noise-and-distortion ratios (SNDRs) are 78 dB over 270 kHz (GSM), 75 dB over 1.25 MHz (IS-95), 69 dB over 1.762 MHz (DECT), and 48 dB over 3.84 MHz (WCDMA) bandwidths using a 60 MHz IF signal.reviewe

A bandpass sigma delta modulator IF receiver

Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.Includes bibliographical references (leaves 170-173).by Emilija Simic.M.Eng

Multi-stage noise shaping (MASH) delta-sigma modulators for wideband and multi-standard applications

Imperial Users onl

A survey on continuous-time modulators : theory, designs and implementations

Recently, delta-sigma modulation has become a widely applied technique for high-performance analog-to-digital conversion of narrow-band signals. Most of the early designs used discrete-time structure for good accuracy and good linearity. The transfer functions are independent of the clock frequency. However, high unity-gain bandwidths of the opamps are required to satisfy the settling accuracy required in the discrete-time designs. Continuous-time structure can potentially achieve higher clock frequency with less power consumption. the anti-aliasing filter can also be eliminated due to the anti-aliasing property of CT modulators. On the other hand, CT ADC have their own problems, such as jitter sensitivity and excess loop delay. In this thesis, the state-of-the-art of CT modulator is reviewed. The problems in the design of CT ADCs are analyzed and solutions to them are described. The theory, design and implementations of CT modulator will also be reviewed.Keywords: Continuous-Time, Delta-Sigm

High Performance Integrated Circuit Blocks for High-IF Wideband Receivers

Due to the demand for high‐performance radio frequency (RF) integrated circuit design in the past years, a system‐on‐chip (SoC) that enables integration of analog and digital parts on the same die has become the trend of the microelectronics industry. As a result, a major requirement of the next generation of wireless devices is to support multiple standards in the same chip‐set. This would enable a single device to support multiple peripheral applications and services. Based on the aforementioned, the traditional superheterodyne front‐end architecture is not suitable for such applications as it would require a complete receiver for each standard to be supported. A more attractive alternative is the highintermediate frequency (IF) radio architecture. In this case the signal is digitalized at an intermediate frequency such as 200MHz. As a consequence, the baseband operations, such as down‐conversion and channel filtering, become more power and area efficient in the digital domain. Such architecture releases the specifications for most of the front‐end building blocks, but the linearity and dynamic range of the ADC become the bottlenecks in this system. The requirements of large bandwidth, high frequency and enough resolution make such ADC very difficult to realize. Many ADC architectures were analyzed and Continuous‐Time Bandpass Sigma‐Delta (CT‐BP‐ΣΔ) architecture was found to be the most suitable solution in the high‐IF receiver architecture since they combine oversampling and noise shaping to get fairly high resolution in a limited bandwidth. A major issue in continuous‐time networks is the lack of accuracy due to powervoltage‐ temperature (PVT) tolerances that lead to over 20% pole variations compared to their discrete‐time counterparts. An optimally tuned BP ΣΔ ADC requires correcting for center frequency deviations, excess loop delay, and DAC coefficients. Due to these undesirable effects, a calibration algorithm is necessary to compensate for these variations in order to achieve high SNR requirements as technology shrinks. In this work, a novel linearization technique for a Wideband Low‐Noise Amplifier (LNA) targeted for a frequency range of 3‐7GHz is presented. Post‐layout simulations show NF of 6.3dB, peak S21 of 6.1dB, and peak IIP3 of 21.3dBm, respectively. The power consumption of the LNA is 5.8mA from 2V. Secondly, the design of a CMOS 6th order CT BP‐ΣΔ modulator running at 800 MHz for High‐IF conversion of 10MHz bandwidth signals at 200 MHz is presented. A novel transconductance amplifier has been developed to achieve high linearity and high dynamic range at high frequencies. A 2‐bit quantizer with offset cancellation is alsopresented. The sixth‐order modulator is implemented using 0.18 um TSMC standard analog CMOS technology. Post‐layout simulations in cadence demonstrate that the modulator achieves a SNDR of 78 dB (~13 bit) performance over a 14MHz bandwidth. The modulator’s static power consumption is 107mW from a supply power of ± 0.9V. Finally, a calibration technique for the optimization of the Noise Transfer Function CT BP ΣΔ modulators is presented. The proposed technique employs two test tones applied at the input of the quantizer to evaluate the noise transfer function of the ADC, using the capabilities of the Digital Signal Processing (DSP) platform usually available in mixed‐mode systems. Once the ADC output bit stream is captured, necessary information to generate the control signals to tune the ADC parameters for best Signal‐to‐Quantization Noise Ratio (SQNR) performance is extracted via Least‐ Mean Squared (LMS) software‐based algorithm. Since the two tones are located outside the band of interest, the proposed global calibration approach can be used online with no significant effect on the in‐band content