First-principles calculation on the transport properties of molecular wires between Au clusters under equilibrium

Based on the matrix Green's function method combined with hybrid tight-binding / density functional theory, we calculate the conductances of a series of gold-dithiol molecule-gold junctions including benzenedithiol (BDT), benzenedimethanethiol (BDMT), hexanedithiol (HDT), octanedithiol (ODT) and decanedithiol (DDT). An atomically-contacted extended molecule model is used in our calculation. As an important procedure, we determine the position of the Fermi level by the energy reference according to the results from ultraviolet photoelectron spectroscopy (UPS) experiments. After considering the experimental uncertainty in UPS measurement, the calculated results of molecular conductances near the Fermi level qualitatively agree with the experimental values measured by Tao et. al. [{\it Science} 301, 1221 (2003); {\it J. Am. Chem. Soc.} 125, 16164 (2003); {\it Nano. Lett.} 4, 267 (2004).]Comment: 12 pages,8 figure

Mempelajari Senyawa Mirisitrin Dengan Penambahan Substituen NH2, NO2, dan CH3 Sebagai Inhibitor Korosi Menggunakan Metode Density Fuctional Theory (DFT)

Corrosion inhibition ability myricitrin compound (M1) with the addition of NH2 (M2), NO2 (M3), and CH3 (M4) on the metal surface has been studied using Fuctional Density Theory (DFT) with a base set of B3LYP / 6-31G (d, p). Parameters obtained from the optimization result are the value EHOMO, ELUMO and dipole moment. Of the value EHOMO and ELUMO obtained and calculated the value of the energy gap (AE), ionization potential (IP), electron affinity (EA), electronegativity (χ), hardness (η), softness (σ), electron transfer (ΔN), and electrophilicity (ω). Computational calculations show that the compound M4 has the best corrosion inhibition ability. Based on the value EHOMO, the energy gap (AE), ionization potential (IP), hardness (η), softness (σ) and electron transfer (ΔN).   Keywords: DFT, Corrosion Inhibition, EHOMO, ELUM

Size dependent electronic properties of silicon quantum dots - an analysis with hybrid, screened hybrid and local density functional theory

We use an efficient projection scheme for the Fock operator to analyze the size dependence of silicon quantum dots (QDs) electronic properties. We compare the behavior of hybrid, screened hybrid and local density functionals as a function of the dot size up to $\sim$800 silicon atoms and volume of up to $\sim$20nm$^3$. This allows comparing the calculations of hybrid and screened hybrid functionals to experimental results over a wide range of QD sizes. We demonstrate the size dependent behavior of the band gap, density of states, ionization potential and HOMO level shift after ionization. Those results are compared to experiment and to other theoretical approaches, such as tight-binding, empirical pseudopotentials, TDDFT and GW

A low-bandgap dimeric porphyrin molecule for 10% efficiency solar cells with small photon energy loss

Dimeric porphyrin molecules have great potential as donor materials for high performance bulk heterojunction organic solar cells (OSCs). Recently reported dimeric porphyrins bridged by ethynylenes showed power conversion efficiencies (PCEs) of more than 8%. In this study, we design and synthesize a new conjugated dimeric D-A porphyrin ZnP2BT-RH, in which the two porphyrin units are linked by an electron accepting benzothiadiazole (BT) unit. The introduction of the BT unit enhances the electron delocalization, resulting in a lower highest occupied molecular orbital (HOMO) energy level and an increased molar extinction coefficient in the near-infrared (NIR) region. The bulk heterojunction solar cells with ZnP2BT-RH as the donor material exhibit a high PCE of up to 10% with a low energy loss (Eloss) of only 0.56 eV. The 10% PCE is the highest for porphyrin-based OSCs with a conventional structure, and this Eloss is also the smallest among those reported for small molecule-based OSCs with a PCE higher than 10% to date

BN Nanotube Serving as a Gas Chemical Sensor for N₂O by Parallel Electric Field

Density functional theory calculations were performed to understand the electronic properties of C₂₄, B₁₂N₁₂, B₁₂P₁₂, and (6, 0) BNNT interacted with N₂O molecule in the presence and absence of an external electric field using the B3LYP method and 6-31G** basis set. The adsorption of N₂O from O-side on the surface of (6, 0) BNNT has high sensitivity in comparison with B₁₂N₁₂ nano-cage. The adsorption energy of N₂O (O-side) on the sidewalls of B₁₂N₁₂ and BNNT in the presence of an electric field are −21.01 and −15.48 kJ mol⁻¹, respectively. Our results suggest that in the presence of an electric field, the B₁₂N₁₂ nano-cage is the more energetically notable upon the N₂O adsorption than (6, 0) BNNT, C₂₄, and B₁₂P₁₂. Whereas, our results indicate that the electronic property of BNNT is more sensitive to N₂O molecule at the presence of an electric field than B₁₂N₁₂ nano-cage. It is anticipated that BNNT could be a favorable gas sensor for the detection of N₂O molecule. © 2016, Springer Science+Business Media New York

Electronic Structure Shift of Deep Nanoscale Silicon by SiO2_2- vs. Si3_3N4_4-Embedding as Alternative to Impurity Doping

Conventional impurity doping of deep nanoscale silicon (dns-Si) used in ultra large scale integration (ULSI) faces serious challenges below the 14 nm technology node. We report on a new fundamental effect in theory and experiment, namely the electronic structure of dns-Si experiencing energy offsets of ca. 1 eV as a function of SiO$_2$- vs. Si$_3$N$_4$-embedding with a few monolayers (MLs). An interface charge transfer (ICT) from dns-Si specific to the anion type of the dielectric is at the core of this effect and arguably nested in quantum-chemical properties of oxygen (O) and nitrogen (N) vs. Si. We investigate the size up to which this energy offset defines the electronic structure of dns-Si by density functional theory (DFT), considering interface orientation, embedding layer thickness, and approximants featuring two Si nanocrystals (NCs); one embedded in SiO$_2$ and the other in Si$_3$N$_4$. Working with synchrotron ultraviolet photoelectron spectroscopy (UPS), we use SiO$_2$- vs. Si$_3$N$_4$-embedded Si nanowells (NWells) to obtain their energy of the top valence band states. These results confirm our theoretical findings and gauge an analytic model for projecting maximum dns-Si sizes for NCs, nanowires (NWires) and NWells where the energy offset reaches full scale, yielding to a clear preference for electrons or holes as majority carriers in dns-Si. Our findings can replace impurity doping for n/p-type dns-Si as used in ultra-low power electronics and ULSI, eliminating dopant-related issues such as inelastic carrier scattering, thermal ionization, clustering, out-diffusion and defect generation. As far as majority carrier preference is concerned, the elimination of those issues effectively shifts the lower size limit of Si-based ULSI devices to the crystalization limit of Si of ca. 1.5 nm and enables them to work also under cryogenic conditions.Comment: 14 pages, 17 Figures with a total 44 graph

Simulating the nanomechanical response of cyclooctatetraene molecules on a graphene device

We investigate the atomic and electronic structures of cyclooctatetraene (COT) molecules on graphene and analyze their dependence on external gate voltage using first-principles calculations. The external gate voltage is simulated by adding or removing electrons using density functional theory (DFT) calculations. This allows us to investigate how changes in carrier density modify the molecular shape, orientation, adsorption site, diffusion barrier, and diffusion path. For increased hole doping COT molecules gradually change their shape to a more flattened conformation and the distance between the molecules and graphene increases while the diffusion barrier drastically decreases. For increased electron doping an abrupt transition to a planar conformation at a carrier density of -8$\times$10$^{13}$ e/cm$^2$ is observed. These calculations imply that the shape and mobility of adsorbed COT molecules can be controlled by externally gating graphene devices