Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations

We present the detailed results of the application of mathematical optimization algorithms to transistor sizing in a full-adder cell design, to obtain the maximum expected fabrication yield. The approach takes into account all the fabrication process parameter variations specified in an industrial PDK, in addition to operating condition range and NBTI aging. The final design solutions present transistor sizing, which depart from intuitive transistor sizing criteria and show dramatic yield improvements, which have been verified by Monte Carlo SPICE analysis

Enhancing Power Efficient Design Techniques in Deep Submicron Era

Excessive power dissipation has been one of the major bottlenecks for design and manufacture in the past couple of decades. Power efficient design has become more and more challenging when technology scales down to the deep submicron era that features the dominance of leakage, the manufacture variation, the on-chip temperature variation and higher reliability requirements, among others. Most of the computer aided design (CAD) tools and algorithms currently used in industry were developed in the pre deep submicron era and did not consider the new features explicitly and adequately. Recent research advances in deep submicron design, such as the mechanisms of leakage, the source and characterization of manufacture variation, the cause and models of on-chip temperature variation, provide us the opportunity to incorporate these important issues in power efficient design. We explore this opportunity in this dissertation by demonstrating that significant power reduction can be achieved with only minor modification to the existing CAD tools and algorithms. First, we consider peak current, which has become critical for circuit's reliability in deep submicron design. Traditional low power design techniques focus on the reduction of average power. We propose to reduce peak current while keeping the overhead on average power as small as possible. Second, dual Vt technique and gate sizing have been used simultaneously for leakage savings. However, this approach becomes less effective in deep submicron design. We propose to use the newly developed process-induced mechanical stress to enhance its performance. Finally, in deep submicron design, the impact of on-chip temperature variation on leakage and performance becomes more and more significant. We propose a temperature-aware dual Vt approach to alleviate hot spots and achieve further leakage reduction. We also consider this leakage-temperature dependency in the dynamic voltage scaling approach and discover that a commonly accepted result is incorrect for the current technology. We conduct extensive experiments with popular design benchmarks, using the latest industry CAD tools and design libraries. The results show that our proposed enhancements are promising in power saving and are practical to solve the low power design challenges in deep submicron era

PERFORMANCE EVALUTION OF CNTFET-BASED SRAM CELL DESIGN

Carbon Nanotube Field-Effect Transistor (CNTFET) technology with their excellent current capabilities, ballistic transport operation and superior thermal conductivities has proved to be a very promising and superior alternative to the conventional CMOS technology. A detailed analysis and simulation based assessment of circuit performance of this technology is presented here. As figures of merit speed, power consumption and stability are considered to evaluate the performance parameters of CNTFET-Based SRAM Cells with different chiral vectors for the optimum performance. A novel performance metric, presented as “SPR,” is used to assess these figures of merit. This comprehensive metric includes a metric of low power delay product (PDP) for write operation and high stability in the operation of a memory cell. It is shown that an 8T SRAM cell provides 73% higher SPR than Dual-Chiral based 6T SRAM cell for CNT technology and 124% higher SPR than its CMOS counterpart, thus attaining superior performance. The CNTFET-based 8T SRAM cell demonstrates that it provides high stability, low delay and low power, which is better than CNTFET-based 6T SRAM cell as well as CMOS SRAM cell

A PROPOSED DUAL SIZE DESIGN FOR ENERGY MINIMIZATION IN SUB-THRESHOLD CIRCUITS

Sub-threshold operation has received a lot of attention in limited performance applications.However, energy optimization of sub-threshold circuits should be performed with the concern of the performance limitation of such circuit. In this paper, a dual size design is proposed for energy minimization of sub-threshold CMOS circuits. The optimal downsizing factor is determined and assigned for some gates on the off-critical paths to minimize the energy at the maximum allowable performance. This assignment is performed using the proposed slack based genetic algorithm which is a heuristic-mixed evolutionary algorithm. Some gates are heuristically assigned to the original and the downsized design based on their slack time determined by static timing analysis. Other gates are subjected to the genetic algorithm to perform an optimal downsizing assignment taking into account the previous assignments. The algorithm is applied for different downsizing factors to determine the optimal dual size for low energy operation without a performance degradation. Experimental results are obtained for some ISCAS-85 benchmark circuits such as 74283, 74L85, ALU74181, and 16 bit ripple carry adder. The proposed design shows an energy per cycle saving ranged from (29.6% to 56.59%) depending on the utilization of available slack time from the off-critical paths

Power Efficient Data-Aware SRAM Cell for SRAM-Based FPGA Architecture

The design of low-power SRAM cell becomes a necessity in today\u27s FPGAs, because SRAM is a critical component in FPGA design and consumes a large fraction of the total power. The present chapter provides an overview of various factors responsible for power consumption in FPGA and discusses the design techniques of low-power SRAM-based FPGA at system level, device level, and architecture levels. Finally, the chapter proposes a data-aware dynamic SRAM cell to control the power consumption in the cell. Stack effect has been adopted in the design to reduce the leakage current. The various peripheral circuits like address decoder circuit, write/read enable circuits, and sense amplifier have been modified to implement a power-efficient SRAM-based FPGA

Designing energy-efficient sub-threshold logic circuits using equalization and non-volatile memory circuits using memristors

The very large scale integration (VLSI) community has utilized aggressive complementary metal-oxide semiconductor (CMOS) technology scaling to meet the ever-increasing performance requirements of computing systems. However, as we enter the nanoscale regime, the prevalent process variation effects degrade the CMOS device reliability. Hence, it is increasingly essential to explore emerging technologies which are compatible with the conventional CMOS process for designing highly-dense memory/logic circuits. Memristor technology is being explored as a potential candidate in designing non-volatile memory arrays and logic circuits with high density, low latency and small energy consumption. In this thesis, we present the detailed functionality of multi-bit 1-Transistor 1-memRistor (1T1R) cell-based memory arrays. We present the performance and energy models for an individual 1T1R memory cell and the memory array as a whole. We have considered TiO2- and HfOx-based memristors, and for these technologies there is a sub-10% difference between energy and performance computed using our models and HSPICE simulations. Using a performance-driven design approach, the energy-optimized TiO2-based RRAM array consumes the least write energy (4.06 pJ/bit) and read energy (188 fJ/bit) when storing 3 bits/cell for 100 nsec write and 1 nsec read access times. Similarly, HfOx-based RRAM array consumes the least write energy (365 fJ/bit) and read energy (173 fJ/bit) when storing 3 bits/cell for 1 nsec write and 200 nsec read access times. On the logic side, we investigate the use of equalization techniques to improve the energy efficiency of digital sequential logic circuits in sub-threshold regime. We first propose the use of a variable threshold feedback equalizer circuit with combinational logic blocks to mitigate the timing errors in digital logic designed in sub-threshold regime. This mitigation of timing errors can be leveraged to reduce the dominant leakage energy by scaling supply voltage or decreasing the propagation delay. At the fixed supply voltage, we can decrease the propagation delay of the critical path in a combinational logic block using equalizer circuits and, correspondingly decrease the leakage energy consumption. For a 8-bit carry lookahead adder designed in UMC 130 nm process, the operating frequency can be increased by 22.87% (on average), while reducing the leakage energy by 22.6% (on average) in the sub-threshold regime. Overall, the feedback equalization technique provides up to 35.4% lower energy-delay product compared to the conventional non-equalized logic. We also propose a tunable adaptive feedback equalizer circuit that can be used with sequential digital logic to mitigate the process variation effects and reduce the dominant leakage energy component in sub-threshold digital logic circuits. For a 64-bit adder designed in 130 nm our proposed approach can reduce the normalized delay variation of the critical path delay from 16.1% to 11.4% while reducing the energy-delay product by 25.83% at minimum energy supply voltage. In addition, we present detailed energy-performance models of the adaptive feedback equalizer circuit. This work serves as a foundation for the design of robust, energy-efficient digital logic circuits in sub-threshold regime

Energy-Efficient Digital Circuit Design using Threshold Logic Gates

abstract: Improving energy efficiency has always been the prime objective of the custom and automated digital circuit design techniques. As a result, a multitude of methods to reduce power without sacrificing performance have been proposed. However, as the field of design automation has matured over the last few decades, there have been no new automated design techniques, that can provide considerable improvements in circuit power, leakage and area. Although emerging nano-devices are expected to replace the existing MOSFET devices, they are far from being as mature as semiconductor devices and their full potential and promises are many years away from being practical. The research described in this dissertation consists of four main parts. First is a new circuit architecture of a differential threshold logic flipflop called PNAND. The PNAND gate is an edge-triggered multi-input sequential cell whose next state function is a threshold function of its inputs. Second a new approach, called hybridization, that replaces flipflops and parts of their logic cones with PNAND cells is described. The resulting \hybrid circuit, which consists of conventional logic cells and PNANDs, is shown to have significantly less power consumption, smaller area, less standby power and less power variation. Third, a new architecture of a field programmable array, called field programmable threshold logic array (FPTLA), in which the standard lookup table (LUT) is replaced by a PNAND is described. The FPTLA is shown to have as much as 50% lower energy-delay product compared to conventional FPGA using well known FPGA modeling tool called VPR. Fourth, a novel clock skewing technique that makes use of the completion detection feature of the differential mode flipflops is described. This clock skewing method improves the area and power of the ASIC circuits by increasing slack on timing paths. An additional advantage of this method is the elimination of hold time violation on given short paths. Several circuit design methodologies such as retiming and asynchronous circuit design can use the proposed threshold logic gate effectively. Therefore, the use of threshold logic flipflops in conventional design methodologies opens new avenues of research towards more energy-efficient circuits.Dissertation/ThesisDoctoral Dissertation Computer Science 201

A Four-Transistor Level Converter for Dual-Voltage Low-Power Design

Power dissipation in digital circuits has become a primary concern in electronic design. With increasing usage of portable devices, there are severe restrictions being placed on the size, weight and power of batteries. In this work, we propose a design of a dual V th feedback type four-transistor level converter (DVF4) with reduced delay and power overheads. The use of DVF4 enhances the effectiveness of a dual-voltage low-power design. The level converter can be used in a circuit with multi supply voltage system where low supply gates may feed into high supply gates resulting in lower power and higher speed than with previously published level converters. The proposed level converter is based on a feedback circuit and employs multi-V th technique. To portray the advantages, we compare the proposed level converter with a previously published level converter for various supply voltages and observe 17.44% to 53% power savings and around 50% delay reduction over the best 32 nm CMOS design available in the literature. The impact of process variations is also examined. When used with dual VDD designs, the new level converter renders up to 61% more energy savings for benchmark circuits in comparison when level converters are not allowed. Furthermore, a level converter flip-flop combination performs better than an existing level converting flip-flop. A single-threshold alternative of the new level converter still remains effective, though over a reduced voltage range