Digitally-Assisted RF IC Design Techniques for Reliable Performance

Semiconductor industries have competitively scaled down CMOS devices to attain benefits of low cost, high performance, and high integration density in digital integrated circuits. On the other hand, deep scaled technologies inextricably accompany a large process variation, supply voltage scaling, and reduction in breakdown voltages of transistors. When it comes to RF/analog IC design, CMOS scaling adversely affects its reliability due to large performance variation and limited linearity. For addressing the issues related to variations and linearity, this research proposes the following digitally-assisted RF circuit design techniques: self-calibration system for RF phase shifters and wide dynamic range LNAs. Due to PVT variations in scaled technologies, RF phase shifter design becomes more challenging with device scaling. In the proposed self-calibration topology, we devised a novel phase sensing method and a pulsewidth-to-digital converter. The feedback controller is also designed in digital domain, which is robust to PVT variations. These unique techniques enable a sensing/control loop tolerant to PVT variations. The self-calibration loop was applied to a 7 to 13GHz phase shifter. With the calibration, the estimated phase error is less than 2 degrees. To overcome the linearity issue in scaled technologies, a digitally-controlled dual-mode LNA design is presented. A narrowband (5.1GHz) and a wideband (0.8 to 6GHz) LNA can be toggled between high-gain and high-linearity modes by digital control bits according to the input signal power. A compact design, which provides negligible performance degradation by additional circuitry, is achieved by sharing most of the components between the two operation modes. The narrowband and the wideband LNA achieves an input-referred P1dB of -1.8dBm and +4.2dBm, respectively

Power-efficient high-speed interface circuit techniques

Inter- and intra-chip connections have become the new challenge to enable the scaling of computing systems, ranging from mobile devices to high-end servers. Demand for aggregate I/O bandwidth has been driven by applications including high-speed ethernet, backplane micro-servers, memory, graphics, chip-to-chip and network onchip. I/O circuitry is becoming the major power consumer in SoC processors and memories as the increasing bandwidth demands larger per-pin data rate or larger I/O pin count per component. The aggregate I/O bandwidth has approximately doubled every three to four years across a diverse range of standards in different applications. However, in order to keep pace with these standards enabled in part by process-technology scaling, we will require more than just device scaling in the near future. New energy-efficient circuit techniques must be proposed to enable the next generations of handheld and high-performance computers, given the thermal and system-power limits they start facing. ^ In this work, we are proposing circuit architectures that improve energy efficiency without decreasing speed performance for the most power hungry circuits in high speed interfaces. By the introduction of a new kind of logic operators in CMOS, called implication operators, we implemented a new family of high-speed frequency dividers/prescalers with reduced footprint and power consumption. New techniques and circuits for clock distribution, for pre-emphasis and for driver at the transmitter side of the I/O circuitry have been proposed and implemented. At the receiver side, new DFE architecture and CDR have been proposed and have been proven experimentally

Techniques for Frequency Synthesizer-Based Transmitters.

Internet of Things (IoT) devices are poised to be the largest market for the semiconductor industry. At the heart of a wireless IoT module is the radio and integral to any radio is the transmitter. Transmitters with low power consumption and small area are crucial to the ubiquity of IoT devices. The fairly simple modulation schemes used in IoT systems makes frequency synthesizer-based (also known as PLL-based) transmitters an ideal candidate for these devices. Because of the reduced number of analog blocks and the simple architecture, PLL-based transmitters lend themselves nicely to the highly integrated, low voltage nanometer digital CMOS processes of today. This thesis outlines techniques that not only reduce the power consumption and area, but also significantly improve the performance of PLL-based transmitters.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/113385/1/mammad_1.pd

Broadband RF Front-End Design for Multi-Standard Receiver with High-Linearity and Low-Noise Techniques

Future wireless communication devices must support multiple standards and features on a single-chip. The trend towards software-defined radio requires flexible and efficient RF building blocks which justifies the adoption of broadband receiver front-ends in modern and future communication systems. The broadband receiver front-end significantly reduces cost, area, pins, and power, and can process several signal channels simultaneously. This research is mainly focused on the analysis and realization of the broadband receiver architecture and its various building blocks (LNA, Active Balun-LNA, Mixer, and trans-impedance amplifier) for multi-standard applications. In the design of the mobile DTV tuner, a direct-conversion receiver architecture is adopted achieving low power, low cost, and high dynamic-range for DVB-H standard. The tuner integrates a single-ended RF variable gain amplifier (RFVGA), a current-mode passive mixer, and a combination of continuous and discrete-time baseband filter with built-in anti-aliasing. The proposed RFVGA achieves high dynamic-range and gain-insensitive input impedance matching performance. The current-mode passive mixer achieves high gain, low noise, and high linearity with low power supplies. A wideband common-gate LNA is presented that overcomes the fundamental trade-off between power and noise match without compromising its stability. The proposed architecture can achieve the minimum noise figure over the previously reported feedback amplifiers in common-gate configuration. The proposed architecture achieves broadband impedance matching, low noise, large gain, enhanced linearity, and wide bandwidth concurrently by employing an efficient and reliable dual negative-feedback. For the wideband Inductorless Balun-LNA, active single-to-differential architecture has been proposed without using any passive inductor on-chip which occupies a lot of silicon area. The proposed Balun-LNA features lower power, wider bandwidth, and better gain and phase balance than previously reported architectures of the same kind. A surface acoustic wave (SAW)-less direct conversion receiver targeted for multistandard applications is proposed and fabricated with TSMC 0.13?m complementary metal-oxide-semiconductor (CMOS) technology. The target is to design a wideband SAW-less direct coversion receiver with a single low noise transconductor and current-mode passive mixer with trans-impedance amplifier utilizing feed-forward compensation. The innovations in the circuit and architecture improves the receiver dynamic range enabling highly linear direct-conversion CMOS front-end for a multi-standard receiver

Highly digital power efficient techniques for serial links

Low power, high speed serial transceivers are employed in a wide range of applications ranging from chip-to-chip, backplane, and optical interconnects. Apart from being capable of handling a wide range of data rates, the transceivers should have low power consumption (mW/Gbps) and be fully integrated. This work discusses enabling techniques to implement such transceivers. Specifically, three designs: (1) a 0.5-4 Gbps serial link which uses current recycling to reduce power dissipation and (2) a 0.5-2.5 Gbps reference-less clock and data recovery circuit which uses a novel frequency detector to achieve unlimited acquisition range and (3) a 2-4 Gbps low power receiver architecture capable of resolving multiple signalling formats with a simplified XOR based phase rotating PLL will be presented. All the three circuit topologies are highly digital and aim to address the requirements of wide operating range, low power dissipation while being fully integrated. Measured results obtained from the prototypes illustrate the effectiveness of the proposed design techniques

Design and implementation of frequency synthesizers for 3-10 ghz mulitband ofdm uwb communication

The allocation of frequency spectrum by the FCC for Ultra Wideband (UWB) communications in the 3.1-10.6 GHz has paved the path for very high data rate Gb/s wireless communications. Frequency synthesis in these communication systems involves great challenges such as high frequency and wideband operation in addition to stringent requirements on frequency hopping time and coexistence with other wireless standards. This research proposes frequency generation schemes for such radio systems and their integrated implementations in silicon based technologies. Special emphasis is placed on efficient frequency planning and other system level considerations for building compact and practical systems for carrier frequency generation in an integrated UWB radio. This work proposes a frequency band plan for multiband OFDM based UWB radios in the 3.1-10.6 GHz range. Based on this frequency plan, two 11-band frequency synthesizers are designed, implemented and tested making them one of the first frequency synthesizers for UWB covering 78% of the licensed spectrum. The circuits are implemented in 0.25µm SiGe BiCMOS and the architectures are based on a single VCO at a fixed frequency followed by an array of dividers, multiplexers and single sideband (SSB) mixers to generate the 11 required bands in quadrature with fast hopping in much less than 9.5 ns. One of the synthesizers is integrated and tested as part of a 3-10 GHz packaged receiver. It draws 80 mA current from a 2.5 V supply and occupies an area of 2.25 mm2. Finally, an architecture for a UWB synthesizer is proposed that is based on a single multiband quadrature VCO, a programmable integer divider with 50% duty cycle and a single sideband mixer. A frequency band plan is proposed that greatly relaxes the tuning range requirement of the multiband VCO and leads to a very digitally intensive architecture for wideband frequency synthesis suitable for implementation in deep submicron CMOS processes. A design in 130nm CMOS occupies less than 1 mm2 while consuming 90 mW. This architecture provides an efficient solution in terms of area and power consumption with very low complexity

An Energy-Efficient Reconfigurable Mobile Memory Interface for Computing Systems

The critical need for higher power efficiency and bandwidth transceiver design has significantly increased as mobile devices, such as smart phones, laptops, tablets, and ultra-portable personal digital assistants continue to be constructed using heterogeneous intellectual properties such as central processing units (CPUs), graphics processing units (GPUs), digital signal processors, dynamic random-access memories (DRAMs), sensors, and graphics/image processing units and to have enhanced graphic computing and video processing capabilities. However, the current mobile interface technologies which support CPU to memory communication (e.g. baseband-only signaling) have critical limitations, particularly super-linear energy consumption, limited bandwidth, and non-reconfigurable data access. As a consequence, there is a critical need to improve both energy efficiency and bandwidth for future mobile devices.;The primary goal of this study is to design an energy-efficient reconfigurable mobile memory interface for mobile computing systems in order to dramatically enhance the circuit and system bandwidth and power efficiency. The proposed energy efficient mobile memory interface which utilizes an advanced base-band (BB) signaling and a RF-band signaling is capable of simultaneous bi-directional communication and reconfigurable data access. It also increases power efficiency and bandwidth between mobile CPUs and memory subsystems on a single-ended shared transmission line. Moreover, due to multiple data communication on a single-ended shared transmission line, the number of transmission lines between mobile CPU and memories is considerably reduced, resulting in significant technological innovations, (e.g. more compact devices and low cost packaging to mobile communication interface) and establishing the principles and feasibility of technologies for future mobile system applications. The operation and performance of the proposed transceiver are analyzed and its circuit implementation is discussed in details. A chip prototype of the transceiver was implemented in a 65nm CMOS process technology. In the measurement, the transceiver exhibits higher aggregate data throughput and better energy efficiency compared to prior works

RF Circuit Design in Nanometer CMOS

With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern multi-band communication systems as these systems move toward software-defined radio.\ud These trends in technology and system design call for a re-thinking of analog and RF circuit design in nanometer CMOS. Dr. Bram Nauta will discuss innovations\ud intended to enable continued progress in spite of these challenges. These innovations include thermal noise canceling, poly-phase distortion canceling and 1/f noise reduction techniques applied to basic RF circuits

Design and implementation of frequency synthesizers for 3-10 ghz mulitband ofdm uwb communication

The allocation of frequency spectrum by the FCC for Ultra Wideband (UWB) communications in the 3.1-10.6 GHz has paved the path for very high data rate Gb/s wireless communications. Frequency synthesis in these communication systems involves great challenges such as high frequency and wideband operation in addition to stringent requirements on frequency hopping time and coexistence with other wireless standards. This research proposes frequency generation schemes for such radio systems and their integrated implementations in silicon based technologies. Special emphasis is placed on efficient frequency planning and other system level considerations for building compact and practical systems for carrier frequency generation in an integrated UWB radio. This work proposes a frequency band plan for multiband OFDM based UWB radios in the 3.1-10.6 GHz range. Based on this frequency plan, two 11-band frequency synthesizers are designed, implemented and tested making them one of the first frequency synthesizers for UWB covering 78% of the licensed spectrum. The circuits are implemented in 0.25µm SiGe BiCMOS and the architectures are based on a single VCO at a fixed frequency followed by an array of dividers, multiplexers and single sideband (SSB) mixers to generate the 11 required bands in quadrature with fast hopping in much less than 9.5 ns. One of the synthesizers is integrated and tested as part of a 3-10 GHz packaged receiver. It draws 80 mA current from a 2.5 V supply and occupies an area of 2.25 mm2. Finally, an architecture for a UWB synthesizer is proposed that is based on a single multiband quadrature VCO, a programmable integer divider with 50% duty cycle and a single sideband mixer. A frequency band plan is proposed that greatly relaxes the tuning range requirement of the multiband VCO and leads to a very digitally intensive architecture for wideband frequency synthesis suitable for implementation in deep submicron CMOS processes. A design in 130nm CMOS occupies less than 1 mm2 while consuming 90 mW. This architecture provides an efficient solution in terms of area and power consumption with very low complexity

Challenges and Solutions for High Performance Analog Circuits with Robust Operation in Low Power Digital CMOS

In modern System-on-Chip products, analog circuits need to co-exist with digital circuits integrated on the same chip. This brings on a lot of challenges since analog circuits need to maintain their performance while being subjected to disturbances from the digital circuits. Device size scaling is driven by digital applications to reduce size and improve performance but also results in the need to reduce the supply voltage. Moreover, in some applications, digital circuits require a changing supply voltage to adapt performance to workloads. So it is further desirable to develop design solutions for analog circuits that can operate with a flexible supply voltage, which can be reduced well below 1V. In this thesis challenges and solutions for key high performance analog circuit functions are explored and demonstrated that operate robustly in a digital environment, function with flexible supply voltages or have a digital-like operation. A combined phase detector consisting of a phase-frequency detector and sub-sampling phase detector is proposed for phase-locked loops (PLLs). The phase-frequency function offers robust operation and the sub-sampling detector leads to low in-band phase noise. A 2.2GHz PLL with a combined phase detector was prototyped in a 65nm CMOS process, with an on-chip loop filter area of only 0.04mm². The experimental results show that the PLL with the combined phase detector is more robust to disturbances than a sub-sampling PLL, while still achieving a measured in-band phase noise of -122dBc/Hz which is comparable to the excellent noise performance of a sub-sampling PLL. A pulse-controlled common-mode feedback (CMFB) circuit is proposed for a 0.6V-1.2V supply-scalable fully-differential amplifier that was implemented in a low power/leakage 65nm CMOS technology. An integrator built with the amplifier occupies an active area of 0.01mm². When the supply is changed from 0.6V to 1.2V, the measured frequency response changes are small, demonstrating the flexible supply operation of the differential amplifier with the pulse-controlled CMFB. Next, models are developed to study the performance scaling of a continuous-time sigma-delta modulator (SDM) with a varying supply voltage. It is demonstrated that the loop filter and the quantizer exhibit different supply dependence. The loop noise performance becomes better at a higher supply thanks to larger signal swings and better signal-to-noise ratio, while the figure of merit determined by the quantization noise gets better at a lower supply voltage, thanks to the quantizer power dissipation reduction. The theoretical models were verified with simulations of a 0.6V-1.2V 2MHz continuous-time SDM design in a 65nm CMOS low power/leakage process. Finally, two design techniques are introduced that leverage the continued improvement of digital circuit blocks for the realization of analog functions. A voltage-controlled-ring-oscillator-based amplifier with zero compensation is proposed that internally uses a phase-domain representation of the analog signal. This provides a huge DC gain without significant penalties on the unity-gain bandwidth or area. With this amplifier a 4th-order 40-MHz active-UGB-RC filter was implemented that offers a wide bandwidth, superior linearity and small area. The filter prototype in a 55nm CMOS process has an active area of 0.07mm² and a power consumption of 7.8mW at 1.2V. The in-band IIP3 and out-of-band IIP3 are measured as 27.3dBm and 22.5dBm, respectively. A digital in-situ biasing technique is proposed to overcome the design challenges of conventional analog biasing circuits in an advanced CMOS process. A digital CMFB was simulated in a 65nm CMOS technology to demonstrate the advantages of this digital biasing scheme. Using time-based successive approximation conversion, the digital CMFB provides the desired analog output with a more robust operation and a smaller area, but without needing any stability compensation schemes like in conventional analog CMFBs. In summary, analog design techniques are continuously evolving to adapt to the integration with digital circuits on the same chip and are increasingly using digital-like blocks to realize analog functions in highly-integrated SOC chips. The signal representation in analog circuits is moving from traditional electrical signals such as voltage or current, to time and phase-domain representations. These changes make analog circuits more robust to voltage disturbances and supply variations. In addition to improved robustness, analog circuits based on timing signals benefit from the faster and smaller transistors offered by the continued feature scaling in CMOS technologies