Predicting power scalability in a reconfigurable platform

This thesis focuses on the evolution of digital hardware systems. A reconfigurable platform is proposed and analysed based on thin-body, fully-depleted silicon-on-insulator Schottky-barrier transistors with metal gates and silicide source/drain (TBFDSBSOI). These offer the potential for simplified processing that will allow them to reach ultimate nanoscale gate dimensions. Technology CAD was used to show that the threshold voltage in TBFDSBSOI devices will be controllable by gate potentials that scale down with the channel dimensions while remaining within appropriate gate reliability limits. SPICE simulations determined that the magnitude of the threshold shift predicted by TCAD software would be sufficient to control the logic configuration of a simple, regular array of these TBFDSBSOI transistors as well as to constrain its overall subthreshold power growth. Using these devices, a reconfigurable platform is proposed based on a regular 6-input, 6-output NOR LUT block in which the logic and configuration functions of the array are mapped onto separate gates of the double-gate device. A new analytic model of the relationship between power (P), area (A) and performance (T) has been developed based on a simple VLSI complexity metric of the form ATσ = constant. As σ defines the performance “return” gained as a result of an increase in area, it also represents a bound on the architectural options available in power-scalable digital systems. This analytic model was used to determine that simple computing functions mapped to the reconfigurable platform will exhibit continuous power-area-performance scaling behavior. A number of simple arithmetic circuits were mapped to the array and their delay and subthreshold leakage analysed over a representative range of supply and threshold voltages, thus determining a worse-case range for the device/circuit-level parameters of the model. Finally, an architectural simulation was built in VHDL-AMS. The frequency scaling described by σ, combined with the device/circuit-level parameters predicts the overall power and performance scaling of parallel architectures mapped to the array

Doctor of Philosophy

dissertationAdvancements in process technology and circuit techniques have enabled the creation of small chemical microsystems for use in a wide variety of biomedical and sensing applications. For applications requiring a small microsystem, many components can be integrated onto a single chip. This dissertation presents many low-power circuits, digital and analog, integrated onto a single chip called the Utah Microcontroller. To guide the design decisions for each of these components, two specific microsystems have been selected as target applications: a Smart Intravaginal Ring (S-IVR) and an NO releasing catheter. Both of these applications share the challenging requirements of integrating a large variety of low-power mixed-signal circuitry onto a single chip. These applications represent the requirements of a broad variety of small low-power sensing systems. In the course of the development of the Utah Microcontroller, several unique and significant contributions were made. A central component of the Utah Microcontroller is the WIMS Microprocessor, which incorporates a low-power feature called a scratchpad memory. For the first time, an analysis of scaling trends projected that scratchpad memories will continue to save power for the foreseeable future. This conclusion was bolstered by measured data from a fabricated microcontroller. In a 32 nm version of the WIMS Microprocessor, the scratchpad memory is projected to save ~10-30% of memory access energy depending upon the characteristics of the embedded program. Close examination of application requirements informed the design of an analog-to-digital converter, and a unique single-opamp buffered charge scaling DAC was developed to minimize power consumption. The opamp was designed to simultaneously meet the varied demands of many chip components to maximize circuit reuse. Each of these components are functional, have been integrated, fabricated, and tested. This dissertation successfully demonstrates that the needs of emerging small low-power microsystems can be met in advanced process nodes with the incorporation of low-power circuit techniques and design choices driven by application requirements

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. With all these innovations and efforts, the transistor size is approaching the natural limitations of materials in the near future. The circuits are expected to compute in a more efficient way. From this perspective, new device concepts are desirable to exploit additional functionality. On the other hand, with the continuously increased device density on the chips, reducing the power consumption has become a key concern in IC design. To overcome the limitations of Complementary Metal-Oxide-Semiconductor (CMOS) technology in computing efficiency and power reduction, this thesis introduces the multiple- independent-gate Field-Effect Transistors (FETs) with silicon nanowires and FinFET structures. The device not only has the capability of polarity control, but also provides dual-threshold- voltage and steep-subthreshold-slope operations for power reduction in circuit design. By independently modulating the Schottky junctions between metallic source/drain and semiconductor channel, the dual-threshold-voltage characteristics with controllable polarity are achieved in a single device. This property is demonstrated in both experiments and simulations. Thanks to the compact implementation of logic functions, circuit-level benchmarking shows promising performance with a configurable dual-threshold-voltage physical design, which is suitable for low-power applications. This thesis also experimentally demonstrates the steep-subthreshold-slope operation in the multiple-independent-gate FETs. Based on a positive feedback induced by weak impact ionization, the measured characteristics of the device achieve a steep subthreshold slope of 6 mV/dec over 5 decades of current. High Ion/Ioff ratio and low leakage current are also simultaneously obtained with a good reliability. Based on a physical analysis of the device operation, feasible improvements are suggested to further enhance the performance. A physics-based surface potential and drain current model is also derived for the polarity-controllable Silicon Nanowire FETs (SiNWFETs). By solving the carrier transport at Schottky junctions and in the channel, the core model captures the operation with independent gate control. It can serve as the core framework for developing a complete compact model by integrating advanced physical effects. To summarize, multiple-independent-gate SiNWFETs and FinFETs are extensively studied in terms of fabrication, modeling, and simulation. The proposed device concept expands the family of polarity-controllable FETs. In addition to the enhanced logic functionality, the polarity-controllable SiNWFETs and FinFETs with the dual-threshold-voltage and steep-subthreshold-slope operation can be promising candidates for future IC design towards low-power applications

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects

Intelligent Circuits and Systems

ICICS-2020 is the third conference initiated by the School of Electronics and Electrical Engineering at Lovely Professional University that explored recent innovations of researchers working for the development of smart and green technologies in the fields of Energy, Electronics, Communications, Computers, and Control. ICICS provides innovators to identify new opportunities for the social and economic benefits of society.　 This conference bridges the gap between academics and R&D institutions, social visionaries, and experts from all strata of society to present their ongoing research activities and foster research relations between them. It provides opportunities for the exchange of new ideas, applications, and experiences in the field of smart technologies and finding global partners for future collaboration. The ICICS-2020 was conducted in two broad categories, Intelligent Circuits & Intelligent Systems and Emerging Technologies in Electrical Engineering

A Low-Power DSP Architecture for a Fully Implantable Cochlear Implant System-on-a-Chip.

The National Science Foundation Wireless Integrated Microsystems (WIMS) Engineering Research Center at the University of Michigan developed Systems-on-a-Chip to achieve biomedical implant and environmental monitoring functionality in low-milliwatt power consumption and 1-2 cm3 volume. The focus of this work is implantable electronics for cochlear implants (CIs), surgically implanted devices that utilize existing nerve connections between the brain and inner-ear in cases where degradation of the sensory hair cells in the cochlea has occurred. In the absence of functioning hair cells, a CI processes sound information and stimulates the nderlying nerve cells with currents from implanted electrodes, enabling the patient to understand speech. As the brain of the WIMS CI, the WIMS microcontroller unit (MCU) delivers the communication, signal processing, and storage capabilities required to satisfy the aggressive goals set forth. The 16-bit MCU implements a custom instruction set architecture focusing on power-efficient execution by providing separate data and address register windows, multi-word arithmetic, eight addressing modes, and interrupt and subroutine support. Along with 32KB of on-chip SRAM, a low-power 512-byte scratchpad memory is utilized by the WIMS custom compiler to obtain an average of 18% energy savings across benchmarks. A synthesizable dynamic frequency scaling circuit allows the chip to select a precision on-chip LC or ring oscillator, and perform clock scaling to minimize power dissipation; it provides glitch-free, software-controlled frequency shifting in 100ns, and dissipates only 480μW. A highly flexible and expandable 16-channel Continuous Interleaved Sampling Digital Signal Processor (DSP) is included as an MCU peripheral component. Modes are included to process data, stimulate through electrodes, and allow experimental stimulation or processing. The entire WIMS MCU occupies 9.18mm2 and consumes only 1.79mW from 1.2V in DSP mode. This is the lowest reported consumption for a cochlear DSP. Design methodologies were analyzed and a new top-down design flow is presented that encourages hardware and software co-design as well as cross-domain verification early in the design process. An O(n) technique for energy-per-instruction estimations both pre- and post-silicon is presented that achieves less than 4% error across benchmarks. This dissertation advances low-power system design while providing an improvement in hearing recovery devices.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/91488/1/emarsman_1.pd

High performance continuous-time filters for information transfer systems

Vast attention has been paid to active continuous-time filters over the years. Thus as the cheap, readily available integrated circuit OpAmps replaced their discrete circuit versions, it became feasible to consider active-RC filter circuits using large numbers of OpAmps. Similarly the development of integrated operational transconductance amplifier (OTA) led to new filter configurations. This gave rise to OTA-C filters, using only active devices and capacitors, making it more suitable for integration. The demands on filter circuits have become ever more stringent as the world of electronics and communications has advanced. In addition, the continuing increase in the operating frequencies of modern circuits and systems increases the need for active filters that can perform at these higher frequencies; an area where the LC active filter emerges. What mainly limits the performance of an analog circuit are the non-idealities of the used building blocks and the circuit architecture. This research concentrates on the design issues of high frequency continuous-time integrated filters. Several novel circuit building blocks are introduced. A novel pseudo-differential fully balanced fully symmetric CMOS OTA architecture with inherent common-mode detection is proposed. Through judicious arrangement, the common-mode feedback circuit can be economically implemented. On the level of system architectures, a novel filter low-voltage 4th order RF bandpass filter structure based on emulation of two magnetically coupled resonators is presented. A unique feature of the proposed architecture is using electric coupling to emulate the effect of the coupled-inductors, thus providing bandwidth tuning with small passband ripple. As part of a direct conversion dual-mode 802.11b/Bluetooth receiver, a BiCMOS 5th order low-pass channel selection filter is designed. The filter operated from a single 2.5V supply and achieves a 76dB of out-of-band SFDR. A digital automatic tuning system is also implemented to account for process and temperature variations. As part of a Bluetooth transmitter, a low-power quadrature direct digital frequency synthesizer (DDFS) is presented. Piecewise linear approximation is used to avoid using a ROM look-up table to store the sine values in a conventional DDFS. Significant saving in power consumption, due to the elimination of the ROM, renders the design more suitable for portable wireless communication applications

Development and modelling of a versatile active micro-electrode array for high density in-vivo and in-vitro neural signal investigation

The electrophysiological observation of neurological cells has allowed much knowledge to be gathered regarding how living organisms are believed to acquire and process sensation. Although much has been learned about neurons in isolation, there is much more to be discovered in how these neurons communicate within large networks. The challenges of measuring neurological networks at the scale, density and chronic level of non invasiveness required to observe neurological processing and decision making are manifold, however methods have been suggested that have allowed small scale networks to be observed using arrays of micro-fabricated electrodes. These arrays transduce ionic perturbations local to the cell membrane in the extracellular fluid into small electrical signals within the metal that may be measured. A device was designed for optimal electrical matching to the electrode interface and maximal signal preservation of the received extracellular neural signals. Design parameters were developed from electrophysiological computer simulations and experimentally obtained empirical models of the electrode-electrolyte interface. From this information, a novel interface based signal filtering method was developed that enabled high density amplifier interface circuitry to be realised. A novel prototype monolithic active electrode was developed using CMOS microfabrication technology. The device uses the top metallization of a selected process to form the electrode substrate and compact amplification circuitry fabricated directly beneath the electrode to amplify and separate the neural signal from the baseline offsets and noise of the electrode interface. The signal is then buffered for high speed sampling and switched signal routing. Prototype 16 and 256 active electrode array with custom support circuitry is presented at the layout stage for a 20 μm diameter 100 μm pitch electrode array. Each device consumes 26.4 μW of power and contributes 4.509 μV (rms) of noise to the received signal over a controlled bandwidth of 10 Hz - 5 kHz. The research has provided a fundamental insight into the challenges of high density neural network observation, both in the passive and the active manner. The thesis concludes that power consumption is the fundamental limiting factor of high density integrated MEA circuitry; low power dissipation being crucial for the existence of the surface adhered cells under measurement. With transistor sizing, noise and signal slewing each being inversely proportional to the dc supply current and the large power requirements of desirable ancillary circuitry such as analogue-to-digital converters, a situation of compromise is approached that must be carefully considered for specific application design

Topical Workshop on Electronics for Particle Physics

The purpose of the workshop was to present results and original concepts for electronics research and development relevant to particle physics experiments as well as accelerator and beam instrumentation at future facilities; to review the status of electronics for the LHC experiments; to identify and encourage common efforts for the development of electronics; and to promote information exchange and collaboration in the relevant engineering and physics communities