350 mV, 5 GHz Class-D Enhanced Swing Differential and Quadrature VCOs in 65 nm CMOS

A new enhanced swing class-D VCO which operates from a supply voltage as low as 300 mV is presented. The architectural advantages are described along with an analysis for the oscillation frequency. Prototype differential and quadrature variants of the proposed VCO have been implemented in a 65 nm RF CMOS process with a 5 GHz VCO oscillation frequency. At a 350 mV supply, the measured phase noise performance for the quadrature VCO with a 5% tuning range is -137.1 dBc/Hz at 3 MHz offset with a power dissipation of 2.1 mW from a 0.35 V supply. The highest resulting figure-of-merit (FoM) is 198.3 dBc/Hz.©2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works

Study on wideband voltage controlled oscillator and high efficiency power amplifier ICs for wireless communications

制度:新 ; 報告番号:甲3604号 ; 学位の種類:博士(工学) ; 授与年月日:2012/2/20 ; 早大学位記番号:新595

Circuits and Systems for On-Chip RF Chemical Sensors and RF FDD Duplexers

Integrating RF bio-chemical sensors and RF duplexers helps to reduce cost and area in the current applications. Furthermore, new applications can exist based on the large scale integration of these crucial blocks. This dissertation addresses the integration of RF bio-chemical sensors and RF duplexers by proposing these initiatives. A low power integrated LC-oscillator-based broadband dielectric spectroscopy (BDS) system is presented. The real relative permittivity ε’r is measured as a shift in the oscillator frequency using an on-chip frequency-to-digital converter (FDC). The imaginary relative permittivity ε”r increases the losses of the oscillator tank which mandates a higher dc biasing current to preserve the same oscillation amplitude. An amplitude-locked loop (ALL) is used to fix the amplitude and linearize the relation between the oscillator bias current and ε”r. The proposed BDS system employs a sensing oscillator and a reference oscillator where correlated double sampling (CDS) is used to mitigate the impact of flicker noise, temperature variations and frequency drifts. A prototype is implemented in 0.18 µm CMOS process with total chip area of 6.24 mm^2 to operate in 1-6 GHz range using three dual bands LC oscillators. The achieved standard deviation in the air is 2.1 ppm for frequency reading and 110 ppm for current reading. A tunable integrated electrical balanced duplexer (EBD) is presented as a compact alternative to multiple bulky SAW and BAW duplexers in 3G/4G cellular transceivers. A balancing network creates a replica of the transmitter signal for cancellation at the input of a single-ended low noise amplifier (LNA) to isolate the receive path from the transmitter. The proposed passive EBD is based on a cross-connected transformer topology without the need of any extra balun at the antenna side. The duplexer achieves around 50 dB TX-RX isolation within 1.6-2.2 GHz range up to 22 dBm. The cascaded noise figure of the duplexer and LNA is 6.5 dB, and TX insertion loss (TXIL) of the duplexer is about 3.2 dB. The duplexer and LNA are implemented in 0.18 µm CMOS process and occupy an active area of 0.35 mm^2

A Wide Tuning-Range CMOS VCO with a Tunable Active Inductor

This study describes a wide tuning-range VCO using tunable active inductor (TAI) topology and cross-coupled pair configuration for radio frequency operation. The TAI used two feedback loops to form a cascode circuit to obtain more degrees of freedom for inductance value. The TAI-VCO was fabricated using a 0.18 μm CMOS technology. The coarse frequency tuning is achieved by TAIs while the fine tuning is controlled by varactors. The fabricated circuit provides an output frequency range from 0.6 to 7.2 GHz (169%). The measured phase noise is from −110.38 to −86.01 dBc/Hz at a 1 MHz offset and output power is from −11.11 to −3.89 dBm within the entire frequency range under a 1.8 V power supply

Integrated RF oscillators and LO signal generation circuits

This thesis deals with fully integrated LC oscillators and local oscillator (LO) signal generation circuits. In communication systems a good-quality LO signal for up- and down-conversion in transmitters is needed. The LO signal needs to span the required frequency range and have good frequency stability and low phase noise. Furthermore, most modern systems require accurate quadrature (IQ) LO signals. This thesis tackles these challenges by presenting a detailed study of LC oscillators, monolithic elements for good-quality LC resonators, and circuits for IQ-signal generation and for frequency conversion, as well as many experimental circuits. Monolithic coils and variable capacitors are essential, and this thesis deals with good structures of these devices and their proper modeling. As experimental test devices, over forty monolithic inductors and thirty varactors have been implemented, measured and modeled. Actively synthesized reactive elements were studied as replacements for these passive devices. At first glance these circuits show promising characteristics, but closer noise and nonlinearity analysis reveals that these circuits suffer from high noise levels and a small dynamic range. Nine circuit implementations with various actively synthesized variable capacitors were done. Quadrature signal generation can be performed with three different methods, and these are analyzed in the thesis. Frequency conversion circuits are used for alleviating coupling problems or to expand the number of frequency bands covered. The thesis includes an analysis of single-sideband mixing, frequency dividers, and frequency multipliers, which are used to perform the four basic arithmetical operations for the frequency tone. Two design cases are presented. The first one is a single-sideband mixing method for the generation of WiMedia UWB LO-signals, and the second one is a frequency conversion unit for a digital period synthesizer. The last part of the thesis presents five research projects. In the first one a temperature-compensated GaAs MESFET VCO was developed. The second one deals with circuit and device development for an experimental-level BiCMOS process. A cable-modem RF tuner IC using a SiGe process was developed in the third project, and a CMOS flip-chip VCO module in the fourth one. Finally, two frequency synthesizers for UWB radios are presented

Scalable Array Transceivers with Wide Frequency Tuning Range for Next Generation Radios

Scalable array transceivers with wide frequency tuning range are attractive for next-generationradios. Key challenges for such radios include generation of LO signals with widefrequency tuning range, scalable synchronization between multiple array unit cells andtolerance to in-band and out-of-band interferers. This thesis presents approaches toaddress these challenges in commercial CMOS technologies.The first part focuses on a series resonant mode-switching VCO architecture thatachieves both state-of-art area and power efficiency with an octave frequency tuningrange from 6.4-14 GHz achieved 186-dB-188-dB Figure-of-Merit (FoM) in 65 nm CMOStechnology. The scalability of this approach towards achieving even larger FTR is alsodemonstrated by a triple-mode 2.2 GHz to 8.7 GHz (119% FTR) CMOS VCO.In the second part a scalable, single-wire coupled-PLL architecture for RF mm-wavearrays is presented. The proposed architecture preserves the simplicity of a daisy-chained LO distribution, compensates for phase offset due to interconnect, and provides phasenoise improvement commensurate to the number of coupled PLLs. Measurements on a28 GHz CMOS prototype demonstrate the feasibility of this scheme.The third part of this thesis presents filtering techniques for in-band blocker suppression.A spatial spectral notch filter design for MIMO digital beam forming arrays is proposedto relax the ADC dynamic range requirement. Orthogonal properties of Walsh functionsincorporated into passive N-path approach enables reconfigurable notches at multiplefrequencies and angles-of-incidence. A 0.3 GHz-1.4 GHz four-element array prototypeimplemented in 65 nm CMOS achieves > 15-dB notch filtering at RF input for twoblockers while causing < 3-dB NF degradation.Finally, a code-domain N-path receiver (RX) is proposed based on pseudo-random(PN) code-modulated LO pulses for simultaneous transmission and reception (STAR)applications. A combination of Walsh-Function and PN sequence is proposed to createcode-domain matched filter at the RF frontend which reflects unknown in-band blockersand rejects known in-band TX self-interference (SI) by using orthogonal codes at RXinput thereby maximizing the SNR of the received signals. The resulting prototype in65 nm is functional from 0.3 GHz-1.4 GHz with 35 dB gain and concurrently receivestwo code-modulated signals. Proposed transmitter (TX) SI mitigation approach resultsin 38.5 dB rejection for -11.8 dBm 1.46 Mb s QPSK modulated SI at RX input. TheRX achieves 23.7 dBm OP1dB for in-band SI, while consuming ∼35 mW and occupies0.31 mm2Keywords: Passive Mixers, dual band, TX self-Interferer, synchronisation, STAR, Code domain N-path receiver, mode switching, notch filter, Phase locked loops, Octave tuning range, CMOS, phase noise, VCO, large-scale 5G mm-wave arrays, resonator, Simultaneous transmit and receive, resonator band-switching, LO distribution, scalable coupled-PLL, N-path passive mixers, MIMO arrays, digital beamforming, CDMA, phased arrays, wide tuning range, Walsh Functio

An Energy-Efficient Reconfigurable Mobile Memory Interface for Computing Systems

The critical need for higher power efficiency and bandwidth transceiver design has significantly increased as mobile devices, such as smart phones, laptops, tablets, and ultra-portable personal digital assistants continue to be constructed using heterogeneous intellectual properties such as central processing units (CPUs), graphics processing units (GPUs), digital signal processors, dynamic random-access memories (DRAMs), sensors, and graphics/image processing units and to have enhanced graphic computing and video processing capabilities. However, the current mobile interface technologies which support CPU to memory communication (e.g. baseband-only signaling) have critical limitations, particularly super-linear energy consumption, limited bandwidth, and non-reconfigurable data access. As a consequence, there is a critical need to improve both energy efficiency and bandwidth for future mobile devices.;The primary goal of this study is to design an energy-efficient reconfigurable mobile memory interface for mobile computing systems in order to dramatically enhance the circuit and system bandwidth and power efficiency. The proposed energy efficient mobile memory interface which utilizes an advanced base-band (BB) signaling and a RF-band signaling is capable of simultaneous bi-directional communication and reconfigurable data access. It also increases power efficiency and bandwidth between mobile CPUs and memory subsystems on a single-ended shared transmission line. Moreover, due to multiple data communication on a single-ended shared transmission line, the number of transmission lines between mobile CPU and memories is considerably reduced, resulting in significant technological innovations, (e.g. more compact devices and low cost packaging to mobile communication interface) and establishing the principles and feasibility of technologies for future mobile system applications. The operation and performance of the proposed transceiver are analyzed and its circuit implementation is discussed in details. A chip prototype of the transceiver was implemented in a 65nm CMOS process technology. In the measurement, the transceiver exhibits higher aggregate data throughput and better energy efficiency compared to prior works