Miniature implantable antennas for biomedical telemetry: from simulation to realization

WOS:000310154700019 (Nº de Acesso Web of Science)“Prémio Científico ISCTE-IUL 2013”We address numerical versus experimental design and testing of miniature implantable antennas for biomedical telemetry in the medical implant communications service band (402-405 MHz). A model of a novel miniature antenna is initially proposed for skin implantation, which includes varying parameters to deal with fabrication-specific details. An iterative design-and-testing methodology is further suggested to determine the parameter values that minimize deviations between numerical and experimental results. To assist in vitro testing, a low-cost technique is proposed for reliably measuring the electric properties of liquids without requiring commercial equipment. Validation is performed within a specific prototype fabrication/testing approach for miniature antennas. To speed up design while providing an antenna for generic skin implantation, investigations are performed inside a canonical skin-tissue model. Resonance, radiation, and safety performance of the proposed antenna is finally evaluated inside an anatomical head model. This study provides valuable insight into the design of implantable antennas, assessing the significance of fabrication-specific details in numerical simulations and uncertainties in experimental testing for miniature structures. The proposed methodology can be applied to optimize antennas for several fabrication/testing approaches and biotelemetry applications

Review of LTCC technology for millimeter waves and photonics

VTT Technical Research Centre of Finland Ltd. has developed and utilized Low Temperature Co-fired Ceramic (LTCC) technology for about 25 years. This paper presents our activities related to photonics and millimetre-waves, including also a relevant literature survey. First a short summary of the technology is given. Especially, the unique features of LTCC technology are described in more details. In addition, several examples have been given to show the validity of LTCC technology in these high-performance fields

Antenna on chip (Aoc) design using metasurface and siw technologies for thz wireless applications

This paper presents the design of a high-performance 0.45-0.50 THz antenna on chip (AoC) for fabrication on a 100-micron GaAs substrate. The antenna is based on metasurface and substrate-integrated waveguide (SIW) technologies. It is constituted from seven stacked layers consisting of copper patch-silicon oxide-feedline-silicon oxide-aluminium-GaAs-copper ground. The top layer consists of a 2 x 4 array of rectangular metallic patches with a row of subwavelength circular slots to transform the array into a metasurface. This essentially enlarges the effective aperture area of the antenna. The antenna is excited using a coplanar waveguide feedline that is sandwiched between the two silicon oxide layers below the patch layer. The proposed antenna structure reduces substrate loss and surface waves. The AoC has dimensions of 0.8 x 0.8 x 0.13 mm(3). The results show that the proposed structure greatly enhances the antenna's gain and radiation efficiency, and this is achieved without compromising its physical size. The antenna exhibits an average gain and efficiency of 6.5 dBi and 65%, respectively, which makes it a promising candidate for emerging terahertz applications

Review of LTCC Technology for Millimeter Waves and Photonics

VTT Technical Research Centre of Finland Ltd. has developed and utilized Low Temperature Co-fired Ceramic (LTCC) technology for about 25 years. This paper presents our activities related to photonics and millimetre-waves, including also a relevant literature survey. First a short summary of the technology is given. Especially, the unique features of LTCC technology are described in more details. In addition, several examples have been given to show the validity of LTCC technology in these high-performance fields

A Novel Transparent UWB Antenna for Photovoltaic Solar Panel Integration and RF Energy Harvesting

A novel transparent ultra-wideband antenna for photovoltaic solar-panel integration and RF energy harvesting is proposed in this paper. Since the approval by the Federal Communications Committee (FCC) in 2002, much research has been undertaken on UWB technology, especially for wireless communications. However, in the last decade, UWB has also been proposed as a power harvester. In this paper, a transparent cone-top-tapered slot antenna covering the frequency range from 2.2 to 12.1 GHz is designed and fabricated to provide UWB communications whilst integrated onto solar panels as well as harvest electromagnetic waves from free space and convert them into electrical energy. The antenna when sandwiched between an a-Si solar panel and glass is able to demonstrate a quasi omni-directional pattern that is characteristic of a UWB. The antenna when connected to a 2.55-GHz rectifier is able to produce 18-mV dc in free space and 4.4-mV dc on glass for an input power of 10 dBm at a distance of 5 cm. Although the antenna presented in this paper is a UWB antenna, only an operating range of 2.49 to 2.58 GHz for power scavenging is possible due to the limitation of the narrowband rectifier used for the study

MEMS-reconfigurable metamaterials and antenna applications

This paper reviews some of our contributions to reconfigurable metamaterials, where dynamic control is enabled by micro-electro-mechanical systems (MEMS) technology. First, we show reconfigurable composite right/left handed transmission lines (CRLH-TLs) having state of the art phase velocity variation and loss, thereby enabling efficient reconfigurable phase shifters and leaky-wave antennas (LWA). Second, we present very low loss metasurface designs with reconfigurable reflection properties, applicable in reflectarrays and partially reflective surface (PRS) antennas. All the presented devices have been fabricated and experimentally validated. They operate in X- and Ku-bands.Comment: 8 pages; 8 figures; International Journal of Antennas and Propagatio

Miniaturized Resonator and Bandpass Filter for Silicon-Based Monolithic Microwave and Millimeter-Wave Integrated Circuits

© 2018 IEEE. © 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.This paper introduces a unique approach for the implementation of a miniaturized on-chip resonator and its application for the first-order bandpass filter (BPF) design. This approach utilizes a combination of a broadside-coupling technique and a split-ring structure. To fully understand the principle behind it, simplified LC equivalent-circuit models are provided. By analyzing these models, guidelines for implementation of an ultra-compact resonator and a BPF are given. To further demonstrate the feasibility of using this approach in practice, both the implemented resonator and the filter are fabricated in a standard 0.13-μm (Bi)-CMOS technology. The measured results show that the resonator can generate a resonance at 66.75 GHz, while the BPF has a center frequency at 40 GHz and an insertion loss of 1.7 dB. The chip size of both the resonator and the BPF, excluding the pads, is only 0.012mm 2 (0.08 × 0.144 mm 2).Peer reviewe

A high power handling capability CMOS T/R switch for x-band phased array antenna systems

This paper presents a single-pole double-throw (SPDT) transmit/receive (T/R) switch fabricated in 0.25-μm SiGe BiCMOS process for X-Band (8 – 12 GHz) phased array radar applications. The switch is based on series-shunt topology with combination of techniques to improve insertion loss (IL), isolation and power handling capability (P1dB). These techniques include optimization of transistor widths for lower insertion loss and parallel resonance technique to improve isolation. In addition, DC biasing of input and output ports, on-chip impedance transformation networks (ITN) and resistive body-floating are used to improve P1dB of the switch. All these design techniques resulted in a measured IL of 3.6 dB, isolation of 30.8 dB and P1dB of 28.2 dBm at 10 GHz. The return losses at both input and output ports are better than 16 dB from 8 to 12 GHz. To our knowledge, this work presents the highest P1dB at X-Band compared to other reported single-ended CMOS T/R switches in the literature