Network-on-Chip Synchronization

Technology scaling has enabled the number of cores within a System on Chip (SoC) to increase significantly. Globally Asynchronous Locally Synchronous (GALS) systems using Dynamic Voltage and Frequency Scaling (DVFS) operate each of these cores on distinct and dynamic clock domains. The main communication method between these cores is increasingly more likely to be a Network-on-Chip (NoC). Typically, the interfaces between these clock domains experience multi-cycle synchronization latencies due to their use of “brute-force” synchronizers. This dissertation aims to improve the performance of NoCs and thereby SoCs as a whole by reducing this synchronization latency. First, a survey of NoC improvement techniques is presented. One such improvement technique: a multi-layer NoC, has been successfully simulated. Given how one of the most commonly used techniques is DVFS, a thorough analysis and simulation of brute-force synchronizer circuits in both current and future process technologies is presented. Unfortunately, a multi-cycle latency is unavoidable when using brute-force synchronizers, so predictive synchronizers which require only a single cycle of latency have been proposed. To demonstrate the impact of these predictive synchronizer circuits at a high level, multi-core system simulations incorporating these circuits have been completed. Multiple forms of GALS NoC configurations have been simulated, including multi-synchronous, NoC-synchronous, and single-synchronizer. Speedup on the SPLASH benchmark suite was measured to directly quantify the performance benefit of predictive synchronizers in a full system. Additionally, Mean Time Between Failures (MTBF) has been calculated for each NoC synchronizer configuration to determine the reliability benefit possible when using predictive synchronizers

An Energy-Efficient System with Timing-Reliable Error-Detection Sequentials

A new type of energy-efficient digital system that integrate EDS and DVS circuits has been developed. In these systems, EDS-monitored paths convert the PVT variations into timing variations. Nevertheless, the conversion can suffer from the reliability issue (extrinsic EDS-reliability). EDS circuits detect the unfavorable timing variations (so called ``error'') and guide DVS circuits to adjust the operating voltage to a proper lower level to save the energy. However, the error detection is generally susceptible to the metastability problem (intrinsic EDS-reliability) due to the synchronizer in EDS circuits. The MTBF due to metastability is exponentially related to the synchronizer delay. This dissertation proposes a new EDS circuit deployment strategy to enhance the extrinsic EDS-reliability. This strategy requires neither buffer insertion nor an extra clock and is applicable for FPGA implementations. An FPGA-based Discrete Cosine Transform with EDS and DVS circuits deployed in this fashion demonstrates up to 16.5\% energy savings over a conventional design at equivalent frequency setting and image quality, with a 0.8\% logic element and 3.5\% maximum frequency penalties. VBSs are proposed to improve the synchronizer delay under single low-voltage supply environments. A VBS consists of a Jamb latch and a switched-capacitor-based charge pump that provides a voltage boost to the Jamb Latch to speed up the metastability resolution. The charge pump can be either CVBS or MVBS. A new methodology for extracting the metastability parameters of synchronizers under changing biasing currents is proposed. For a 1-year MTBF specification, MVBS and CVBS show 2.0 to 2.7 and 5.1 to 9.8 times the delay improvement over the basic Jamb latch, respectively, without large power consumption. Optimization techniques including transistor sizing, FBB and dynamic implementation are further applied. For a common MTBF specification at typical PVT conditions, the optimized MVBS and CVBS show 2.97 to 7.57 and 4.14 to 8.13 times the delay improvement over the basic Jamb latch, respectively. In post-Layout simulations, MVBS and CVBS are 1.84 and 2.63 times faster than the basic Jamb latch, respectively

Designing energy-efficient sub-threshold logic circuits using equalization and non-volatile memory circuits using memristors

The very large scale integration (VLSI) community has utilized aggressive complementary metal-oxide semiconductor (CMOS) technology scaling to meet the ever-increasing performance requirements of computing systems. However, as we enter the nanoscale regime, the prevalent process variation effects degrade the CMOS device reliability. Hence, it is increasingly essential to explore emerging technologies which are compatible with the conventional CMOS process for designing highly-dense memory/logic circuits. Memristor technology is being explored as a potential candidate in designing non-volatile memory arrays and logic circuits with high density, low latency and small energy consumption. In this thesis, we present the detailed functionality of multi-bit 1-Transistor 1-memRistor (1T1R) cell-based memory arrays. We present the performance and energy models for an individual 1T1R memory cell and the memory array as a whole. We have considered TiO2- and HfOx-based memristors, and for these technologies there is a sub-10% difference between energy and performance computed using our models and HSPICE simulations. Using a performance-driven design approach, the energy-optimized TiO2-based RRAM array consumes the least write energy (4.06 pJ/bit) and read energy (188 fJ/bit) when storing 3 bits/cell for 100 nsec write and 1 nsec read access times. Similarly, HfOx-based RRAM array consumes the least write energy (365 fJ/bit) and read energy (173 fJ/bit) when storing 3 bits/cell for 1 nsec write and 200 nsec read access times. On the logic side, we investigate the use of equalization techniques to improve the energy efficiency of digital sequential logic circuits in sub-threshold regime. We first propose the use of a variable threshold feedback equalizer circuit with combinational logic blocks to mitigate the timing errors in digital logic designed in sub-threshold regime. This mitigation of timing errors can be leveraged to reduce the dominant leakage energy by scaling supply voltage or decreasing the propagation delay. At the fixed supply voltage, we can decrease the propagation delay of the critical path in a combinational logic block using equalizer circuits and, correspondingly decrease the leakage energy consumption. For a 8-bit carry lookahead adder designed in UMC 130 nm process, the operating frequency can be increased by 22.87% (on average), while reducing the leakage energy by 22.6% (on average) in the sub-threshold regime. Overall, the feedback equalization technique provides up to 35.4% lower energy-delay product compared to the conventional non-equalized logic. We also propose a tunable adaptive feedback equalizer circuit that can be used with sequential digital logic to mitigate the process variation effects and reduce the dominant leakage energy component in sub-threshold digital logic circuits. For a 64-bit adder designed in 130 nm our proposed approach can reduce the normalized delay variation of the critical path delay from 16.1% to 11.4% while reducing the energy-delay product by 25.83% at minimum energy supply voltage. In addition, we present detailed energy-performance models of the adaptive feedback equalizer circuit. This work serves as a foundation for the design of robust, energy-efficient digital logic circuits in sub-threshold regime

Bascules à impulsion robustes en technologie 28nm FDSOI pour circuits numériques basse consommation à très large gamme de tension d'alimentation

The explosion market of the mobile application and the paradigm of the Internet of Things lead to a huge demand for energy-efficient systems. To overcome the limit of Moore's law due to bulk technology, a new transistor technology has appeared recently in industrial process: the fully-depleted silicon on insulator, or FDSOI.In modern ASIC designs, a large portion of the total power consumption is due to the leaves of the clock tree: the flip-flops. Therefore, the appropriate flip-flop architecture is a major choice to reach the speed and energy constraints of mobile and ultra-low power applications. After a thorough overview of the literature, the explicit pulse-triggered flip-flop topology is pointed out as a very interesting flip-flop architecture for high-speed and low-power systems. However, it is today only used in high-performances circuits mainly because of its poor robustness at ultra-low voltage.In this work, explicit pulse-triggered flip-flops architecture design is developed and studied in order to improve their robustness and their energy-efficiency. A large comparison of resettable and scannable latch architecture is performed in the energy-delay domain by modifying the sizing of the transistors, both at nominal and ultra-low voltage. Then, it is shown that the back biasing technique allowed by the FDSOI technology provides better energy and delay performances than the sizing methodology. As the pulse generator is the main cause of functional failure, we proposed a new architecture which provides both a good robustness at ultra-low voltage and an energy efficiency. A selected topology of explicit pulse-triggered flip-flop was implemented in a 16x32b register file which exhibits better speed, energy consumption and area performances than a version with master-slave flip-flops, mainly thanks to the sharing of the pulse generator over several latches.Avec l'explosion du marché des applications portables et le paradigme de l'Internet des objets, la demande pour les circuits à très haute efficacité énergétique ne cesse de croître. Afin de repousser les limites de la loi de Moore, une nouvelle technologie est apparue très récemment dans les procédés industriels afin de remplacer la technologie en substrat massif ; elle est nommée fully-depleted silicon on insulator ou FDSOI. Dans les circuits numériques synchrones modernes, une grande portion de la consommation totale du circuit provient de l'arbre d'horloge, et en particulier son extrémité : les bascules. Dès lors, l'architecture adéquate de bascules est un choix crucial pour atteindre les contraintes de vitesse et d'énergie des applications basse-consommation. Après un large aperçu de l'état de l'art, les bascules à impulsion explicite sont reconnues les plus prometteuses pour les systèmes demandant une haute performance et une basse consommation. Cependant, cette architecture est pour l'instant fortement utilisée dans les circuits à haute performance et pratiquement absente des circuits à basse tension d'alimentation, principalement à cause de sa faible robustesse face aux variations.Dans ce travail, la conception d'architecture de bascule à impulsion explicite est étudiée dans le but d'améliorer la robustesse et l'efficacité énergétique. Un large panel d'architectures de bascule, avec les fonctions reset et scan, a été comparé dans le domaine énergie-délais, à haute et basse tension d'alimentation, grâce à une méthodologie de dimensionnement des transistors. Il a été montré que la technique dite de « back bias », l'un des principaux avantages de la technologie FDSOI, permettait des meilleures performances en énergie et délais que la méthodologie de dimensionnement. Ensuite, comme le générateur d'impulsion est la principale raison de dysfonctionnement, nous avons proposé une nouvelle architecture qui permet un très bon compromis entre robustesse à faible tension et consommation énergétique. Une topologie de bascule à impulsion explicite a été choisie pour être implémentée dans un banc de registres et, comparé aux bascules maître-esclave, elle présente une plus grande vitesse, une plus faible consommation énergétique et une plus petite surface