Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives

Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in computing performance, new computing paradigms, such as quantum computing, must be developed. However, finding the optimal physical system to process quantum information, and scale it up to the large number of qubits necessary to build a general-purpose quantum computer, remains a significant challenge. Recent breakthroughs in nanodevice engineering have shown that qubits can now be manufactured in a similar fashion to silicon field-effect transistors, opening an opportunity to leverage the know-how of the CMOS industry to address the scaling challenge. In this article, we focus on the analysis of the scaling prospects of quantum computing systems based on CMOS technology.Comment: Comments welcom

Quantum-dot Cellular Automata: Review Paper

Quantum-dot Cellular Automata (QCA) is one of the most important discoveries that will be the successful alternative for CMOS technology in the near future. An important feature of this technique, which has attracted the attention of many researchers, is that it is characterized by its low energy consumption, high speed and small size compared with CMOS.  Inverter and majority gate are the basic building blocks for QCA circuits where it can design the most logical circuit using these gates with help of QCA wire. Due to the lack of availability of review papers, this paper will be a destination for many people who are interested in the QCA field and to know how it works and why it had taken lots of attention recentl

Pushing the Limits of Space Technology

Coordinators: Philippe Godignon; Gustavo Liñán.Peer reviewe

A 2.4-GHz low-power/low-voltage wireless plug-and-play module for EEG applications

This paper presents a plug-and-play module for wireless electroencephalogram (EEG) applications. The wireless module is composed by an electrode, processing electronics, a radio-frequency (RF) transceiver, and an associated antenna. The RF transceiver was fabricated in the UMC RF 0.18 mum CMOS process, and operates in the 2.4-GHz ISM band. The receiver has a sensitivity of -60 dBm and a power consumption of 6.3 mW from a 1.8 V supply. The transmitter delivers an output power of 0 dBm with a power consumption of 11.2 mW, for a range of 10 m. It is also presented the electrical performance and comparison between different electrodes for EEG applications, namely sputtered titanium nitride (TiN) electrodes, standard sintered silver/silver chloride (Ag/AgCl) ring electrodes and sputtered iridium oxide (IrO2) electrodes. The experimental results show a better performance of the sputtered IrO2 electrodes compared with the standard sintered Ag/AgCl ring electrodes. These results promise a new opportunity for the application of a dry IrO2 electrodes in wireless modules for using in a wearable EEG braincap. These wireless EEG modules will allow patients to wear a brain cap and maintain their mobility, while simultaneously having their electrical brain activity monitored