52 research outputs found

    RAID Organizations for Improved Reliability and Performance: A Not Entirely Unbiased Tutorial (1st revision)

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    RAID proposal advocated replacing large disks with arrays of PC disks, but as the capacity of small disks increased 100-fold in 1990s the production of large disks was discontinued. Storage dependability is increased via replication or erasure coding. Cloud storage providers store multiple copies of data obviating for need for further redundancy. Varitaions of RAID based on local recovery codes, partial MDS reduce recovery cost. NAND flash Solid State Disks - SSDs have low latency and high bandwidth, are more reliable, consume less power and have a lower TCO than Hard Disk Drives, which are more viable for hyperscalers.Comment: Submitted to ACM Computing Surveys. arXiv admin note: substantial text overlap with arXiv:2306.0876

    Scalable Storage for Digital Libraries

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    I propose a storage system optimised for digital libraries. Its key features are its heterogeneous scalability; its integration and exploitation of rich semantic metadata associated with digital objects; its use of a name space; and its aggressive performance optimisation in the digital library domain

    Growth of Group IV and III-V Semiconductor Materials for Silicon Photonics: Buffer Layer and Light Source Development

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    High data transmission speeds, high levels of integration, and low manufacturing costs have established Si photonics as a crucial technology for next-generation data interconnects and communications systems. It involves a variety of components including light emitters, photodetectors, amplifiers, waveguides, modulators, and more. Because of its indirect bandgap, silicon is unable to serve as an efficient light source on a chip, hence this has been one of the formidable challenges. Within the framework of the monolithic approach, this thesis presents the study of two essential aspects of this challenge, the optimisation of buffer layers and development of light sources, by incorporating and improving different systems of Group IV thin films and III-V quantum dots (QDs) semiconductor materials. The monolithic approach focuses on the direct epitaxial growth of highly efficient light sources, usually by the epitaxy of III-V semiconductors lasers on a single Si chip. However, because of the material dissimilarities between III-V materials and Si, during the heteroepitaxy, a high density of crystalline defects such as threading dislocations (TDs), thermal cracks and anti-phase domains are introduced, severely impeding the performance and yield of the laser. For instance, TDs act as non-radiative recombination centres, while thermal cracks cause issues with the efficient evanescent coupling of the emitted light with Si waveguide. To address these defects, typically complex buffer growth techniques with micron-scale thickness are employed. The research in this thesis is divided into two parts, namely buffer layer optimisation and light source development. Each part outlines alternative strategies for overcoming the above-mentioned hurdles for monolithic growth. The first part highlights the optimisation of buffer layer growth to reduce threading dislocations for the monolithic integration of high-performance direct-bandgap III-V and group IV light sources on Si. The growth optimisation of low defect-density Ge buffer layers epitaxially grown on Si was first investigated. Defect elimination in Ge buffers with doped and undoped seed layers of increasing total thickness is studied under a variety of growth regimes, doping techniques, and annealing processes. This study demonstrates that a 500 nm thin Ge achieves the same defect level (1.3 × 108 cm -2) as 2.2 μm GaAs grown on Si, which greatly increases the thickness budget for the subsequent dislocation filter layers (DFLs) and laser structure growth before the formation of thermal cracks. Meanwhile, a low threading dislocation density of 3.3 × 107 cm -2 is obtained for 1 μm Ge grown on Si. The second part places emphasis on the development of light sources in the near-infrared wavelength range for Si photonics. 1) The development of GeSn, an emerging direct bandgap light source for Si photonics, is shown, which has wide bandgap tuneability and full compatibility with Si complementary metal-oxide semiconductor (CMOS). Growing the high Sn composition of GeSn required for efficient light generation is challenging and its growth generally severely affected by large surface roughness and Sn segregation. In this work, first, ex-situ rapid thermal annealing for the grown GeSn layer is investigated, showing that by proper annealing the strain can be relaxed by 90% without intriguing Sn segregation. This method shows its potential for both material growth and device fabrication. Besides, strain compensated layer and in-situ annealing techniques have been developed. Significantly improved surface quality has been confirmed by in-situ reflection high-energy electron diffraction (RHEED) observations and atomic force microscopy (AFM) images. Transmission electron microscopy (TEM) results reveal the high crystal quality of the multiple quantum wells (MQWs) grown on such buffer layers. 2) The final section details the development of InAs/InP QDs emitting near the strategic 1.55 μm, the lowest optical fibre loss window. The InAs/InP QDs growth is prone to inhomogeneous quantum dash morphologies which broaden the photoluminescence (PL) spectra and degrade the carrier confinement. Research has been conducted on growth parameters and techniques including deposition thickness, growth temperature and Indium-flush technique is applied to improve the uniformity of the dots, and narrow room temperature PL linewidths of 47.9 meV and 50.9 meV have been achieved for single-layer and five-layer quantum dot samples, respectively. The structures enable the fabrication of small footprint microdisk lasers with lasing thresholds as low as 30 μW

    Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer

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    Thermophotovoltaic (TPV) devices based on GaInAsSb lattice matched to GaSb (100) substrates have demonstrated high external quantum efficiencies (EQEs) in the mid-infrared spectral range, making them promising candidates for waste heat recovery from high temperature “blackbody” sources. In this work, the GaInAsSb alloy has been integrated onto more cost-effective GaAs (100) substrates by using advanced metamorphic buffer layer techniques in molecular beam epitaxy (MBE), which included an interfacial misfit (IMF) array at the GaSb/GaAs interface followed by GaInSb/GaSb dislocation filtering layers. The threading dislocations in the GaInAsSb region can be efficiently supressed, resulting in high quality materials for TPV applications. To determine the performance of the GaInAsSb TPV on GaAs it was compared with a cell grown lattice matched onto GaSb substrate having the same structure. The resulting TPV on GaAs exhibited similar dark current-voltage characteristics with that on GaSb. Under illumination from an 800 °C silicon nitride emitter, the short circuit current density (Jsc) from the GaInAsSb TPVs on GaAs reached more than 90% of the control cell on GaSb, and the open circuit voltage (Voc) exceeded 80% of the cell on GaSb. The EQE from the TPV on GaAs reached around 62%, the highest value reported from this type of TPV on GaAs. With improved TPV structure design, large area GaInAsSb TPV panels on GaAs substrates can be realized in the future for waste heat energy recovery applications

    Application of advanced technology to space automation

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    Automated operations in space provide the key to optimized mission design and data acquisition at minimum cost for the future. The results of this study strongly accentuate this statement and should provide further incentive for immediate development of specific automtion technology as defined herein. Essential automation technology requirements were identified for future programs. The study was undertaken to address the future role of automation in the space program, the potential benefits to be derived, and the technology efforts that should be directed toward obtaining these benefits

    NASA Tech Briefs, January 1999

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    Topics include: special coverage sections on sensors and data acquisition and sections on electronic components and circuits, electronic software, materials, mechanics, bio-medical physical sciences, book and reports, and a special section of Photonics Tech Briefs

    The 29th Aerospace Mechanisms Symposium

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    The proceedings of the 29th Aerospace Mechanisms Symposium, which was hosted by NASA Johnson Space Center and held at the South Shore Harbour Conference Facility on May 17-19, 1995, are reported. Technological areas covered include actuators, aerospace mechanism applications for ground support equipment, lubricants, pointing mechanisms joints, bearings, release devices, booms, robotic mechanisms, and other mechanisms for spacecraft

    Investigation of the Effects of Image Signal-to-Noise Ratio on TSPO PET Quantification of Neuroinflammation

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    Neuroinflammation may be imaged using positron emission tomography (PET) and the tracer [11C]-PK11195. Accurate and precise quantification of 18 kilodalton Translocator Protein (TSPO) binding parameters in the brain has proven difficult with this tracer, due to an unfavourable combination of low target concentration in tissue, low brain uptake of the tracer and relatively high non-specific binding, all of which leads to higher levels of relative image noise. To address these limitations, research into new radioligands for the TSPO, with higher brain uptake and lower non-specific binding relative to [11C]-PK11195, is being conducted world-wide. However, factors other than radioligand properties are known to influence signal-to-noise ratio in quantitative PET studies, including the scanner sensitivity, image reconstruction algorithms and data analysis methodology. The aim of this thesis was to investigate and validate computational tools for predicting image noise in dynamic TSPO PET studies, and to employ those tools to investigate the factors that affect image SNR and reliability of TSPO quantification in the human brain. The feasibility of performing multiple (n≥40) independent Monte Carlo simulations for each dynamic [11C]-PK11195 frame- with realistic modelling of the radioactivity source, attenuation and PET tomograph geometries- was investigated. A Beowulf-type high performance computer cluster, constructed from commodity components, was found to be well suited to this task. Timing tests on a single desktop computer system indicated that a computer cluster capable of simulating an hour-long dynamic [11C]-PK11195 PET scan, with 40 independent repeats, and with a total simulation time of less than 6 weeks, could be constructed for less than 10,000 Australian dollars. A computer cluster containing 44 computing cores was therefore assembled, and a peak simulation rate of 2.84x105 photon pairs per second was achieved using the GEANT4 Application for Tomographic Emission (GATE) Monte Carlo simulation software. A simulated PET tomograph was developed in GATE that closely modelled the performance characteristics of several real-world clinical PET systems in terms of spatial resolution, sensitivity, scatter fraction and counting rate performance. The simulated PET system was validated using adaptations of the National Electrical Manufacturers Association (NEMA) quality assurance procedures within GATE. Image noise in dynamic TSPO PET scans was estimated by performing n=40 independent Monte Carlo simulations of an hour-long [11C]-PK11195 scan, and of an hour- long dynamic scan for a hypothetical TSPO ligand with double the brain activity concentration of [11C]-PK11195. From these data an analytical noise model was developed that allowed image noise to be predicted for any combination of brain tissue activity concentration and scan duration. The noise model was validated for the purpose of determining the precision of kinetic parameter estimates for TSPO PET. An investigation was made into the effects of activity concentration in tissue, radionuclide half-life, injected dose and compartmental model complexity on the reproducibility of kinetic parameters. Injecting 555 MBq of carbon-11 labelled TSPO tracer produced similar binding parameter precision to 185 MBq of fluorine-18, and a moderate (20%) reduction in precision was observed for the reduced carbon-11 dose of 370 MBq. Results indicated that a factor of 2 increase in frame count level (relative to [11C]-PK11195, and due for example to higher ligand uptake, injected dose or absolute scanner sensitivity) is required to obtain reliable binding parameter estimates for small regions of interest when fitting a two-tissue compartment, four-parameter compartmental model. However, compartmental model complexity had a similarly large effect, with the reduction of model complexity from the two-tissue compartment, four-parameter to a one-tissue compartment, two-parameter model producing a 78% reduction in coefficient of variation of the binding parameter estimates at each tissue activity level and region size studied. In summary, this thesis describes the development and validation of Monte Carlo methods for estimating image noise in dynamic TSPO PET scans, and analytical methods for predicting relative image noise for a wide range of tissue activity concentration and acquisition durations. The findings of this research suggest that a broader consideration of the kinetic properties of novel TSPO radioligands, with a view to selection of ligands that are potentially amenable to analysis with a simple one-tissue compartment model, is at least as important as efforts directed towards reducing image noise, such as higher brain uptake, in the search for the next generation of TSPO PET tracers
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