Single Event Effect Hardening Designs in 65nm CMOS Bulk Technology

Radiation from terrestrial and space environments is a great danger to integrated circuits (ICs). A single particle from a radiation environment strikes semiconductor materials resulting in voltage and current perturbation, where errors are induced. This phenomenon is termed a Single Event Effect (SEE). With the shrinking of transistor size, charge sharing between adjacent devices leads to less effectiveness of current radiation hardening methods. Improving fault-tolerance of storage cells and logic gates in advanced technologies becomes urgent and important. A new Single Event Upset (SEU) tolerant latch is proposed based on a previous hardened Quatro design. Soft error analysis tools are used and results show that the critical charge of the proposed design is approximately 2 times higher than that of the reference design with negligible penalty in area, delay, and power consumption. A test chip containing the proposed flip-flop chains was designed and exposed to alpha particles as well as heavy ions. Radiation experimental results indicate that the soft error rates of the proposed design are greatly reduced when Linear Energy Transfer (LET) is lower than 4, which makes it a suitable candidate for ground-level high reliability applications. To improve radiation tolerance of combinational circuits, two combinational logic gates are proposed. One is a layout-based hardening Cascode Voltage Switch Logic (CVSL) and the other is a fault-tolerant differential dynamic logic. Results from a SEE simulation tool indicate that the proposed CVSL has a higher critical charge, less cross section, and shorter Single Event Transient (SET) pulses when compared with reference designs. Simulation results also reveal that the proposed differential dynamic logic significantly reduces the SEU rate compared to traditional dynamic logic, and has a higher critical charge and shorter SET pulses than reference hardened design

Soft-Error Resilience Framework For Reliable and Energy-Efficient CMOS Logic and Spintronic Memory Architectures

The revolution in chip manufacturing processes spanning five decades has proliferated high performance and energy-efficient nano-electronic devices across all aspects of daily life. In recent years, CMOS technology scaling has realized billions of transistors within large-scale VLSI chips to elevate performance. However, these advancements have also continually augmented the impact of Single-Event Transient (SET) and Single-Event Upset (SEU) occurrences which precipitate a range of Soft-Error (SE) dependability issues. Consequently, soft-error mitigation techniques have become essential to improve systems\u27 reliability. Herein, first, we proposed optimized soft-error resilience designs to improve robustness of sub-micron computing systems. The proposed approaches were developed to deliver energy-efficiency and tolerate double/multiple errors simultaneously while incurring acceptable speed performance degradation compared to the prior work. Secondly, the impact of Process Variation (PV) at the Near-Threshold Voltage (NTV) region on redundancy-based SE-mitigation approaches for High-Performance Computing (HPC) systems was investigated to highlight the approach that can realize favorable attributes, such as reduced critical datapath delay variation and low speed degradation. Finally, recently, spin-based devices have been widely used to design Non-Volatile (NV) elements such as NV latches and flip-flops, which can be leveraged in normally-off computing architectures for Internet-of-Things (IoT) and energy-harvesting-powered applications. Thus, in the last portion of this dissertation, we design and evaluate for soft-error resilience NV-latching circuits that can achieve intriguing features, such as low energy consumption, high computing performance, and superior soft errors tolerance, i.e., concurrently able to tolerate Multiple Node Upset (MNU), to potentially become a mainstream solution for the aerospace and avionic nanoelectronics. Together, these objectives cooperate to increase energy-efficiency and soft errors mitigation resiliency of larger-scale emerging NV latching circuits within iso-energy constraints. In summary, addressing these reliability concerns is paramount to successful deployment of future reliable and energy-efficient CMOS logic and spintronic memory architectures with deeply-scaled devices operating at low-voltages

Single event upset hardened CMOS combinational logic and clock buffer design

A radiation strike on semiconductor device may lead to charge collection, which may manifest as a wrong logic level causing failure. Soft errors or Single Event Upsets (SEU) caused by radiation strikes are one of the main failure modes in a VLSI circuit. Previous work predicts that soft error rate may dominate the failure rate in VLSI circuit compared to all other failure modes put together. The issue of single event upsets (SEU) need to be addressed such that the failure rate of the chips dues to SEU is in the acceptable range. Memory circuits are designed to be error free with the help of error correction codes. Technology scaling is driving up the SEU rate of combinational logic and it is predicted that the soft error rate (SER) of combinational logic may dominate the SER of unpro-tected memory by the year 2011. Hence a robust combinational logic methodology must be designed for SEU hardening. Recent studies have also shown that clock distribution network is becoming increasingly vulnerable to radiation strike due to reduced capaci-tance at the clock leaf node. A strike on clock leaf node may propagate to many flip-flops increasing the system SER considerably. In this thesis we propose a novel method to improve the SER of the circuit by filtering single event upsets in the combinational logic and clock distribution network. Our ap-proach results in minimal circuit overhead and also requires minimal effort by the de-signer to implement the proposed method. In this thesis we focus on preventing the propagation of SEU rather than eliminating the SEU on each sensitive gate

Study of Single-Event Transient Effects on Analog Circuits

Radiation in space is potentially hazardous to microelectronic circuits and systems such as spacecraft electronics. Transient effects on circuits and systems from high energetic particles can interrupt electronics operation or crash the systems. This phenomenon is particularly serious in complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) since most of modern ICs are implemented with CMOS technologies. The problem is getting worse with the technology scaling down. Radiation-hardening-by-design (RHBD) is a popular method to build CMOS devices and systems meeting performance criteria in radiation environment. Single-event transient (SET) effects in digital circuits have been studied extensively in the radiation effect community. In recent years analog RHBD has been received increasing attention since analog circuits start showing the vulnerability to the SETs due to the dramatic process scaling. Analog RHBD is still in the research stage. This study is to further study the effects of SET on analog CMOS circuits and introduces cost-effective RHBD approaches to mitigate these effects. The analog circuits concerned in this study include operational amplifiers (op amps), comparators, voltage-controlled oscillators (VCOs), and phase-locked loops (PLLs). Op amp is used to study SET effects on signal amplitude while the comparator, the VCO, and the PLL are used to study SET effects on signal state during transition time. In this work, approaches based on multi-level from transistor, circuit, to system are presented to mitigate the SET effects on the aforementioned circuits. Specifically, RHBD approach based on the circuit level, such as the op amp, adapts the auto-zeroing cancellation technique. The RHBD comparator implemented with dual-well and triple-well is studied and compared at the transistor level. SET effects are mitigated in a LC-tank oscillator by inserting a decoupling resistor. The RHBD PLL is implemented on the system level using triple modular redundancy (TMR) approach. It demonstrates that RHBD at multi-level can be cost-effective to mitigate the SEEs in analog circuits. In addition, SETs detection approaches are provided in this dissertation so that various mitigation approaches can be implemented more effectively. Performances and effectiveness of the proposed RHBD are validated through SPICE simulations on the schematic and pulsed-laser experiments on the fabricated circuits. The proposed and tested RHBD techniques can be applied to other relevant analog circuits in the industry to achieve radiation-tolerance

Redundant Skewed Clocking of Pulse-Clocked Latches for Low Power Soft-Error Mitigation

abstract: An integrated methodology combining redundant clock tree synthesis and pulse clocked latches mitigates both single event upsets (SEU) and single event transients (SET) with reduced power consumption. This methodology helps to change the hardness of the design on the fly. This approach, with minimal additional overhead circuitry, has the ability to work in three different modes of operation depending on the speed, hardness and power consumption required by design. This was designed on 90nm low-standby power (LSP) process and utilized commercial CAD tools for testing. Spatial separation of critical nodes in the physical design of this approach mitigates multi-node charge collection (MNCC) upsets. An advanced encryption system implemented with the proposed design, compared to a previous design with non-redundant clock trees and local delay generation. The proposed approach reduces energy per operation up to 18% over an improved version of the prior approach, with negligible area impact. It can save up to 2/3rd of the power consumption and reach maximum possible frequency, when used in non-redundant mode of operation.Dissertation/ThesisMasters Thesis Electrical Engineering 201

Reliability-energy-performance optimisation in combinational circuits in presence of soft errors

PhD ThesisThe reliability metric has a direct relationship to the amount of value produced by a circuit, similar to the performance metric. With advances in CMOS technology, digital circuits become increasingly more susceptible to soft errors. Therefore, it is imperative to be able to assess and improve the level of reliability of these circuits. A framework for evaluating and improving the reliability of combinational circuits is proposed, and an interplay between the metrics of reliability, energy and performance is explored. Reliability evaluation is divided into two levels of characterisation: stochastic fault model (SFM) of the component library and a design-specific critical vector model (CVM). The SFM captures the properties of components with regard to the interference which causes error. The CVM is derived from a limited number of simulation runs on the specific design at the design time and producing the reliability metric. The idea is to move the high-complexity problem of the stochastic characterisation of components to the generic part of the design process, and to do it just once for a large number of specific designs. The method is demonstrated on a range of circuits with various structures. A three-way trade-off between reliability, energy, and performance has been discovered; this trade-off facilitates optimisations of circuits and their operating conditions. A technique for improving the reliability of a circuit is proposed, based on adding a slow stage at the primary output. Slow stages have the ability to absorb narrow glitches from prior stages, thus reducing the error probability. Such stages, or filters, suppress most of the glitches generated in prior stages and prevent them from arriving at the primary output of the circuit. Two filter solutions have been developed and analysed. The results show a dramatic improvement in reliability at the expense of minor performance and energy penalties. To alleviate the problem of the time-consuming analogue simulations involved in the proposed method, a simplification technique is proposed. This technique exploits the equivalence between the properties of the gates within a path and the equivalence between paths. On the basis of these equivalences, it is possible to reduce the number of simulation runs. The effectiveness of the proposed technique is evaluated by applying it to different circuits with a representative variety of path topologies. The results show a significant decrease in the time taken to estimate reliability at the expense of a minor decrease in the accuracy of estimation. The simplification technique enables the use of the proposed method in applications with complex circuits.Ministry of Education and Scientific Research in Liby

Improved Fault Tolerant SRAM Cell Design & Layout in 130nm Technology

Technology scaling of CMOS devices has made the integrated circuits vulnerable to single event radiation effects. Scaling of CMOS Static RAM (SRAM) has led to denser packing architectures by reducing the size and spacing of diffusion nodes. However, this trend has led to the increase in charge collection and sharing effects between devices during an ion strike, making the circuit even more vulnerable to a specific single event effect called the single event multiple-node upset (SEMU). In nanometer technologies, SEMU can easily disrupt the data stored in the memory and can be more hazardous than a single event single-node upset. During the last decade, most of the research efforts were mainly focused on improving the single event single-node upset tolerance of SRAM cells by using novel circuit techniques, but recent studies relating to angular radiation sensitivity has revealed the importance of SEMU and Multi Bit Upset (MBU) tolerance for SRAM cells. The research focuses on improving SEMU tolerance of CMOS SRAM cells by using novel circuit and layout level techniques. A novel SRAM cell circuit & layout technique is proposed to improve the SEMU tolerance of 6T SRAM cells with decreasing feature size, making it an ideal candidate for future technologies. The layout is based on strategically positioning diffusion nodes in such a way as to provide charge cancellation among nodes during SEMU radiation strikes, instead of charge build-up. The new design & layout technique can improve the SEMU tolerance levels by up to 20 times without sacrificing on area overhead and hence is suitable for high density SRAM designs in commercial applications. Finally, laser testing of SRAM based configuration memory of a Xilinx Virtex-5 FPGA is performed to analyze the behavior of SRAM based systems towards radiation strikes

An advanced Framework for efficient IC optimization based on analytical models engine

En base als reptes sorgits a conseqüència de l'escalat de la tecnologia, la present tesis desenvolupa i analitza un conjunt d'eines orientades a avaluar la sensibilitat a la propagació d'esdeveniments SET en circuits microelectrònics. S'han proposant varies mètriques de propagació de SETs considerant l'impacto dels emmascaraments lògic, elèctric i combinat lògic-elèctric. Aquestes mètriques proporcionen una via d'anàlisi per quantificar tant les regions més susceptibles a propagar SETs com les sortides més susceptibles de rebre'ls. S'ha desenvolupat un conjunt d'algorismes de cerca de camins sensibilitzables altament adaptables a múltiples aplicacions, un sistema lògic especific i diverses tècniques de simplificació de circuits. S'ha demostrat que el retard d'un camí donat depèn dels vectors de sensibilització aplicats a les portes que formen part del mateix, essent aquesta variació de retard comparable a la atribuïble a les variacions paramètriques del proces.En base a los desafíos surgidos a consecuencia del escalado de la tecnología, la presente tesis desarrolla y analiza un conjunto de herramientas orientadas a evaluar la sensibilidad a la propagación de eventos SET en circuitos microelectrónicos. Se han propuesto varias métricas de propagación de SETs considerando el impacto de los enmascaramientos lógico, eléctrico y combinado lógico-eléctrico. Estas métricas proporcionan una vía de análisis para cuantificar tanto las regiones más susceptibles a propagar eventos SET como las salidas más susceptibles a recibirlos. Ha sido desarrollado un conjunto de algoritmos de búsqueda de caminos sensibilizables altamente adaptables a múltiples aplicaciones, un sistema lógico especifico y diversas técnicas de simplificación de circuitos. Se ha demostrado que el retardo de un camino dado depende de los vectores de sensibilización aplicados a las puertas que forman parte del mismo, siendo esta variación de retardo comparable a la atribuible a las variaciones paramétricas del proceso.Based on the challenges arising as a result of technology scaling, this thesis develops and evaluates a complete framework for SET propagation sensitivity. The framework comprises a number of processing tools capable of handling circuits with high complexity in an efficient way. Various SET propagation metrics have been proposed considering the impact of logic, electric and combined logic-electric masking. Such metrics provide a valuable vehicle to grade either in-circuit regions being more susceptible of propagating SETs toward the circuit outputs or circuit outputs more susceptible to produce SET. A quite efficient and customizable true path finding algorithm with a specific logic system has been constructed and its efficacy demonstrated on large benchmark circuits. It has been shown that the delay of a path depends on the sensitization vectors applied to the gates within the path. In some cases, this variation is comparable to the one caused by process parameters variation