Reliable Power Gating with NBTI Aging Benefits

In this paper, we show that Negative Bias Temperature Instability (NBTI) aging of sleep transistors (STs), together with its detrimental effect for circuit performance and lifetime, presents considerable benefits for power gated circuits. Indeed, it reduces static power due to leakage current, and increases ST switch efficiency, making power gating more efficient and effective over time. The magnitude of these aging benefits depends on operating and environmental conditions. By means of HSPICE simulations, considering a 32nm CMOS technology, we demonstrate that static power may reduce by more than 80% in 10 years of operation. Static power decrease over time due to NBTI aging is also proven experimentally, using a test-chip manufactured with a TSMC 65nm technology. We propose an ST design strategy for reliable power gating, in order to harvest the benefits offered by NBTI aging. It relies on the design of STs with a proper lower Vth compared to the standard power switching fabric. This can be achieved by either re-designing the STs with the identified Vth value, or applying a proper forward body bias to the available power switching fabrics. Through HSPICE simulations, we show lifetime extension up to 21.4X and average static power reduction up to 16.3% compared to standard ST design approach, without additional area overhead. Finally, we show lifetime extension and several performance-cost trade-offs when a target maximum lifetime is considered

NBTI and leakage aware sleep transistor design for reliable and energy efficient power gating

In this paper we show that power gating techniques become more effective during their lifetime, since the aging of sleep transistors (STs) due to negative bias temperature instability (NBTI) drastically reduces leakage power. Based on this property, we propose an NBTI and leakage aware ST design method for reliable and energy efficient power gating. Through SPICE simulations, we show lifetime extension up to 19.9x and average leakage power reduction up to 14.4% compared to standard STs design approach without additional area overhead.Finally, when a maximum 10-year lifetime target is considered, we show that the proposed method allows multiple beneficial options compared to a standard STs design method: either to improve circuit operating frequency up to 9.53% or to reduce ST area overhead up to 18.4

On Improving Robustness of Hardware Security Primitives and Resistance to Reverse Engineering Attacks

The continued growth of information technology (IT) industry and proliferation of interconnected devices has aggravated the problem of ensuring security and necessitated the need for novel, robust solutions. Physically unclonable functions (PUFs) have emerged as promising secure hardware primitives that can utilize the disorder introduced during manufacturing process to generate unique keys. They can be utilized as \textit{lightweight} roots-of-trust for use in authentication and key generation systems. Unlike insecure non-volatile memory (NVM) based key storage systems, PUFs provide an advantage -- no party, including the manufacturer, should be able to replicate the physical disorder and thus, effectively clone the PUF. However, certain practical problems impeded the widespread deployment of PUFs. This dissertation addresses such problems of (i) reliability and (ii) unclonability. Also, obfuscation techniques have proven necessary to protect intellectual property in the presence of an untrusted supply chain and are needed to aid against counterfeiting. This dissertation explores techniques utilizing layout and logic-aware obfuscation. Collectively, we present secure and cost-effective solutions to address crucial hardware security problems

Degradation in FPGAs: Monitoring, Modeling and Mitigation

This dissertation targets the transistor aging degradation as well as the associated thermal challenges in FPGAs (since there is an exponential relation between aging and chip temperature). The main objectives are to perform experimentation, analysis and device-level model abstraction for modeling the degradation in FPGAs, then to monitor the FPGA to keep track of aging rates and ultimately to propose an aging-aware FPGA design flow to mitigate the aging

Techniques for Improving Security and Trustworthiness of Integrated Circuits

The integrated circuit (IC) development process is becoming increasingly vulnerable to malicious activities because untrusted parties could be involved in this IC development flow. There are four typical problems that impact the security and trustworthiness of ICs used in military, financial, transportation, or other critical systems: (i) Malicious inclusions and alterations, known as hardware Trojans, can be inserted into a design by modifying the design during GDSII development and fabrication. Hardware Trojans in ICs may cause malfunctions, lower the reliability of ICs, leak confidential information to adversaries or even destroy the system under specifically designed conditions. (ii) The number of circuit-related counterfeiting incidents reported by component manufacturers has increased significantly over the past few years with recycled ICs contributing the largest percentage of the total reported counterfeiting incidents. Since these recycled ICs have been used in the field before, the performance and reliability of such ICs has been degraded by aging effects and harsh recycling process. (iii) Reverse engineering (RE) is process of extracting a circuit’s gate-level netlist, and/or inferring its functionality. The RE causes threats to the design because attackers can steal and pirate a design (IP piracy), identify the device technology, or facilitate other hardware attacks. (iv) Traditional tools for uniquely identifying devices are vulnerable to non-invasive or invasive physical attacks. Securing the ID/key is of utmost importance since leakage of even a single device ID/key could be exploited by an adversary to hack other devices or produce pirated devices. In this work, we have developed a series of design and test methodologies to deal with these four challenging issues and thus enhance the security, trustworthiness and reliability of ICs. The techniques proposed in this thesis include: a path delay fingerprinting technique for detection of hardware Trojans, recycled ICs, and other types counterfeit ICs including remarked, overproduced, and cloned ICs with their unique identifiers; a Built-In Self-Authentication (BISA) technique to prevent hardware Trojan insertions by untrusted fabrication facilities; an efficient and secure split manufacturing via Obfuscated Built-In Self-Authentication (OBISA) technique to prevent reverse engineering by untrusted fabrication facilities; and a novel bit selection approach for obtaining the most reliable bits for SRAM-based physical unclonable function (PUF) across environmental conditions and silicon aging effects

ASCH-PUF: A "Zero" Bit Error Rate CMOS Physically Unclonable Function with Dual-Mode Low-Cost Stabilization

Physically unclonable functions (PUFs) are increasingly adopted for low-cost and secure secret key and chip ID generations for embedded and IoT devices. Achieving 100% reproducible keys across wide temperature and voltage variations over the lifetime of a device is critical and conventionally requires large masking or Error Correction Code (ECC) overhead to guarantee. This paper presents an Automatic Self Checking and Healing (ASCH) stabilization technique for a state-of-the-art PUF cell design based on sub-threshold inverter chains. The ASCH system successfully removes all unstable PUF cells without the need for expensive temperature sweeps during unstable bit detection. By accurately finding all unstable bits without expensive temperature sweeps to find all unstable bits, ASCH achieves ultra-low bit error rate (BER), thus significantly reducing the costs of using ECC and enrollment. Our ASCH can operate in two modes, a static mode (S-ASCH) with a conventional pre-enrolled unstable bit mask and a dynamic mode (D-ASCH) that further eliminates the need for non-volatile memories (NVMs) for storing masks. The proposed ASCH-PUF is fabricated and evaluated in 65nm CMOS. The ASCH system achieves "0" Bit Error Rate (BER, < 1.77E-9) across temperature variations of -20{\deg}C to 125{\deg}C, and voltage variations of 0.7V to 1.4V, by masking 31% and 35% of all fabricated PUF bits in S-ASCH and D-ASCH mode respectively. The prototype achieves a measured throughput of 11.4 Gbps with 0.057 fJ/b core energy efficiency at 1.2V, 25{\deg}C.Comment: This paper has been accepted to IEEE Journal of Solid-State Circuits (JSSC

The DEMO magnet system – Status and future challenges

We present the pre-concept design of the European DEMO Magnet System, which has successfully passed the DEMO plant-level gate review in 2020. The main design input parameters originate from the so-called DEMO 2018 baseline, which was produced using the PROCESS systems code. It defines a major and minor radius of 9.1 m and 2.9 m, respectively, an on-axis magnetic field of 5.3 T resulting in a peak field on the toroidal field (TF) conductor of 12.0 T. Four variants, all based on low-temperature superconductors (LTS), have been designed for the 16 TF coils. Two of these concepts were selected to be further pursued during the Concept Design Phase (CDP): the first having many similarities to the ITER TF coil concept and the second being the most innovative one, based on react-and-wind (RW) Nb3Sn technology and winding the coils in layers. Two variants for the five Central Solenoid (CS) modules have been investigated: an LTS-only concept resembling to the ITER CS and a hybrid configuration, in which the innermost layers are made of high-temperature superconductors (HTS), which allows either to increase the magnetic flux or to reduce the outer radius of the CS coil. Issues related to fatigue lifetime which emerged in mechanical analyses will be addressed further in the CDP. Both variants proposed for the six poloidal field coils present a lower level of risk for future development. All magnet and conductor design studies included thermal-hydraulic and mechanical analyses, and were accompanied by experimental tests on both LTS and HTS prototype samples (i.e. DC and AC measurements, stability tests, quench evolution etc.). In addition, magnet structures and auxiliary systems, e.g. cryogenics and feeders, were designed at pre-concept level. Important lessons learnt during this first phase of the project were fed into the planning of the CDP. Key aspects to be addressed concern the demonstration and validation of critical technologies (e.g. industrial manufacturing of RW Nb3Sn and HTS long conductors, insulation of penetrations and joints), as well as the detailed design of the overall Magnet System and mechanical structures

A COMPARATIVE STUDY OF RELIABILITY FOR FINFET

The continuous downscaling of CMOS technologies over the last few decades resulted in higher Integrated Circuit (IC) density and performance. The emergence of FinFET technology has brought with it the same reliability issues as standard CMOS with the addition of a new prominent degradation mechanism. The same mechanisms still exist as for previous CMOS devices, including Bias Temperature Instability (BTI), Hot Carrier Degradation (HCD), Electro-migration (EM), and Body Effects. A new and equally important reliability issue for FinFET is the Self -heating, which is a crucial complication since thermal time-constant is generally much longer than the transistor switching times. FinFET technology is the newest technological paradigm that has emerged in the past decade, as downscaling reached beyond 20 nm, which happens also to be the estimated mean free path of electrons at room temperature in silicon. As such, the reliability physics of FinFET was modified in order to fit the newly developed transistor technology. This paper highlights the roles and impacts of these various effects and aging mechanisms on FinFET transistors compared to planar transistors on the basic approach of the physics of failure mechanisms to fit to a comprehensive aging model