265 research outputs found
Switchable Hardening of a Ferromagnet at Fixed Temperature
The intended use of a magnetic material, from information storage to power
conversion, depends crucially on its domain structure, traditionally crafted
during materials synthesis. By contrast, we show that an external magnetic
field applied transverse to the preferred magnetization of a model disordered
uniaxial ferromagnet is an isothermal regulator of domain pinning. At elevated
temperatures, near the transition into the paramagnet, modest transverse fields
increase the pinning, stabilize the domain structure, and harden the magnet,
until a point where the field induces quantum tunneling of the domain walls and
softens the magnet. At low temperatures, tunneling completely dominates the
domain dynamics and provides an interpretation of the quantum phase transition
in highly disordered magnets as a localization/delocalization transition for
domain walls. While the energy scales of the rare earth ferromagnet studied
here restrict the effects to cryogenic temperatures, the principles discovered
are general and should be applicable to existing classes of highly anisotropic
ferromagnets with ordering at room temperature or above.Comment: 10 pages, 4 figure
Magnetic domain walls : Types, processes and applications
Domain walls (DWs) in magnetic nanowires are promising candidates for a
variety of applications including Boolean/unconventional logic, memories,
in-memory computing as well as magnetic sensors and biomagnetic
implementations. They show rich physical behaviour and are controllable using a
number of methods including magnetic fields, charge and spin currents and
spin-orbit torques. In this review, we detail types of domain walls in
ferromagnetic nanowires and describe processes of manipulating their state. We
look at the state of the art of DW applications and give our take on the their
current status, technological feasibility and challenges.Comment: 32 pages, 25 figures, review pape
Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory
Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr2O3 is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr2O3, the maximal mobility of 0.1 m/(s Oe) is reached at E = 0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr2O3. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. A split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality
Deterministic control of magnetic vortex wall chirality by electric field
Concepts for information storage and logical processing based on magnetic domain walls have great potential for implementation in future information and communications technologies. To date, the need to apply power hungry magnetic fields or heat dissipating spin polarized currents to manipulate magnetic domain walls has limited the development of such technologies. The possibility of controlling magnetic domain walls using voltages offers an energy efficient route to overcome these limitations. Here we show that a voltage-induced uniaxial strain induces reversible deterministic switching of the chirality of a magnetic vortex wall. We discuss how this functionality will be applicable to schemes for information storage and logical processing, making a significant step towards the practical implementation of magnetic domain walls in energy efficient computing
MAGNETOELECTRIC MEMORY CELLS WITH DOMAIN-WALL-MEDIATED SWITCHING
A magnetoelectric memory cell with domain - wall - mediated switching is implemented using a split gate architecture . The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic ( MEAF ) active layer . An extension of this architecture applies to multiple gate linear arrays that can offer advantages in memory density , programmability , and logic functionality . Applying a small anisotropic in - plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switchin
Physics of thin-film ferroelectric oxides
This review covers the important advances in recent years in the physics of
thin film ferroelectric oxides, the strongest emphasis being on those aspects
particular to ferroelectrics in thin film form. We introduce the current state
of development in the application of ferroelectric thin films for electronic
devices and discuss the physics relevant for the performance and failure of
these devices. Following this we cover the enormous progress that has been made
in the first principles computational approach to understanding ferroelectrics.
We then discuss in detail the important role that strain plays in determining
the properties of epitaxial thin ferroelectric films. Finally, we look at the
emerging possibilities for nanoscale ferroelectrics, with particular emphasis
on ferroelectrics in non conventional nanoscale geometries.Comment: This is an invited review for Reviews of Modern Physics. We welcome
feedback and will endeavour to incorporate comments received promptly into
the final versio
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