Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

Accurate Computation of Field Reject Ratio Based on Fault Latency

The field reject ratio, the fraction of defective devices that pass the acceptance test, is a measure of the quality of the tested product. Although the assessment of quality is important, an accurate measurement of the field reject ratio of tested VLSI chips is often not feasible. We show that the known methods of field reject ratio prediction are not accurate since they fail to realistically model the process of testing. We model the detection of a fault by an input test vector as a random event. However, we recognize that the detection of a fault may be delayed for various reasons: the fault may be detectable only by application of a sequence of vectors or it may not have been targeted until later. In our statistical model, a fault is characterized by two parameters: a per-vector detection probability and an integer-valued latency. Irrespective of the detection probability, the fault cannot be detected by a vector sequence shorter than its latency. The circuit is characterized by the joint distribution of latency and detection probability over all faults. This distribution, obtained by applying the Bayes’ rule to the actual test data, enables us to compute the field reject ratio. The sensitivity of this approach to variations in the measured parameters is also investigated

Accurate Computation of Field Reject Ratio Based on Fault Latency

The field reject ratio, the fraction of defective devices that pass the acceptance test, is a measure of the quality of the tested product. Although the assessment of quality is important, an accurate measurement of the field reject ratio of tested VLSI chips is often not feasible. We show that the known methods of field reject ratio prediction are not accurate since they fail to realistically model the process of testing. We model the detection of a fault by an input test vector as a random event. However, we recognize that the detection of a fault may be delayed for various reasons: the fault may be detectable only by application of a sequence of vectors or it may not have been targeted until later. In our statistical model, a fault is characterized by two parameters: a per-vector detection probability and an integer-valued latency. Irrespective of the detection probability, the fault cannot be detected by a vector sequence shorter than its latency. The circuit is characterized by the joint distribution of latency and detection probability over all faults. This distribution, obtained by applying the Bayes’ rule to the actual test data, enables us to compute the field reject ratio. The sensitivity of this approach to variations in the measured parameters is also investigated

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis

Design, processing, and testing of LSI arrays for space station

The applicability of a particular process for the fabrication of large scale integrated circuits is described. Test arrays were designed, built, and tested, and then utilized. A set of optimum dimensions for LSI arrays was generated. The arrays were applied to yield improvement through process innovation, and additional applications were suggested in the areas of yield prediction, yield modeling, and process reliability

Binning for IC Quality: Experimental Studies on the SEMATECH Data

The earlier smaller bipolar study did not provide a high enough bin 0 population to directly observe test escapes and thereby estimate defect levels for the best bin. Results presented here indicate that the best bin can be reasonably expected to show a 2 - 5 factor improvement in defect levels over the average for the lot for moderate to high yields (the overall yield for these experiments was approximately 65%). The experiments also confirm the dependence of the best bin quality on test transparency. The defect level improvement is poorer for the case Of IDDQ escapes where the tests applied had a much higher escape rate. Overall experimental results are consistent with analytical projections for typical values of the clustering parameter in [9]. The final version of this paper will include extensive analysis to validate the analytical models based on this data

Expansion of CMOS array design techniques

The important features of the multiport (double entry) automatic placement and routing programs for standard cells are described. Measured performance and predicted performance were compared for seven CMOS/SOS array types and hybrids designed with the high speed CMOS/SOS cell family. The CMOS/SOS standard cell data sheets are listed and described

Semiconductor technology program. Progress briefs

The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included