A low-offset low-voltage CMOS Op Amp with rail-to-rail input and output ranges

A low voltage CMOS op amp is presented. The circuit uses complementary input pairs to achieve a rail-to-rail common mode input voltage range. Special attention has been given to the reduction of the op amp's systematic offset voltage. Gain boost amplifiers are connected in a special way to provide not only an increase of the low-frequency open-loop gain but also a significant reduction of the systematic offset voltag

High-frequency two-input CMOS OTA for continuous-time filter applications

“This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder." “Copyright IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.”A high-frequency fully differential CMOS operational transconductance amplifier (OTA) is presented for continuous-time filter applications in the megahertz range. The proposed design technique combines a linear cross-coupled quad input stage with an enhanced folded-cascode circuit to increase the output resistance of the amplifier. SPICE simulations show that DC-gain enhancement can be obtained without significant bandwidth limitation. The two-input OTA developed is used in high-frequency tuneable filter design based on IFLF and LC ladder simulation structures. Simulated results of parameters and characteristics of the OTA and filters in a standard 1.2 μm CMOS process (MOSIS) are presented. A tuning circuit is also discussed.Peer reviewe

An Investigative Redesign of the ECG and EMG Signal Conditioning Circuits for Two-fault Tolerance and Circuit Improvement

An investigation was undertaken to make the elctrocardiography (ECG) and the electromyography (EMG) signal conditioning circuits two-fault tolerant and to update the circuitry. The present signal conditioning circuits provide at least one level of subject protection against electrical shock hazard but at a level of 100 micro-A (for voltages of up to 200 V). However, it is necessary to provide catastrophic fault tolerance protection for the astronauts and to provide protection at a current level of less that 100 micro-A. For this study, protection at the 10 micro-A level was sought. This is the generally accepted value below which no possibility of microshock exists. Only the possibility of macroshock exists in the case of the signal conditioners. However, this extra amount of protection is desirable. The initial part deals with current limiter circuits followed by an investigation into the signal conditioner specifications and circuit design

A neural probe with up to 966 electrodes and up to 384 configurable channels in 0.13 μm SOI CMOS

In vivo recording of neural action-potential and local-field-potential signals requires the use of high-resolution penetrating probes. Several international initiatives to better understand the brain are driving technology efforts towards maximizing the number of recording sites while minimizing the neural probe dimensions. We designed and fabricated (0.13-μm SOI Al CMOS) a 384-channel configurable neural probe for large-scale in vivo recording of neural signals. Up to 966 selectable active electrodes were integrated along an implantable shank (70 μm wide, 10 mm long, 20 μm thick), achieving a crosstalk of −64.4 dB. The probe base (5 × 9 mm2) implements dual-band recording and a 1

A Novel Fully Differential Second Generation Current Conveyor and Its Application as a Very High CMRR Instrumentation Amplifier

This paper aims to introduce a novel Fully Differential second generation Current Conveyor (FDCCII) and its application to design a novel Low Power (LP), very high CMRR, and wide bandwidth (BW) Current Mode Instrumentation Amplifier (CMIA). In the proposed application, CMRR, as the most important feature, has been greatly improved by using both common mode feed forward (CMFF) and common mode feedback (CMFB) techniques, which are verified by a perfect circuit analysis. As another unique quality, it neither needs well-matched active blocks nor matched resistors but inherently improves CMRR, BW, and power consumption hence gains an excellent matchless choice for integration. The FDCCII has been designed using 0.18 um TSMC CMOS Technology with ±1.2 V supply voltages. The simulation of the proposed FDCCII and CMIA have been done in HSPICE LEVEL 49. Simulation results for the proposed CMIA are as follow: Voltage CMRR of 216 dB, voltage CMRR BW of 300 Hz. Intrinsic resistance of X-terminals is only 45 Ω and the power dissipation is 383.4 μW.  Most favourably, it shows a constant differential voltage gain BW of 18.1 MHz for variable gains (here ranging from 0 dB to 45.7 dB for example) removing the bottleneck of constant gain-BW product of Voltage mode circuits

A 0.3 V rail-to-rail ultra-low-power OTA with improved bandwidth and slew rate

In this paper, we present a novel operational transconductance amplifier (OTA) topology based on a dual-path body-driven input stage that exploits a body-driven current mirror-active load and targets ultra-low-power (ULP) and ultra-low-voltage (ULV) applications, such as IoT or biomedical devices. The proposed OTA exhibits only one high-impedance node, and can therefore be compensated at the output stage, thus not requiring Miller compensation. The input stage ensures rail-to-rail input common-mode range, whereas the gate-driven output stage ensures both a high open-loop gain and an enhanced slew rate. The proposed amplifier was designed in an STMicroelectronics 130 nm CMOS process with a nominal supply voltage of only 0.3 V, and it achieved very good values for both the small-signal and large-signal Figures of Merit. Extensive PVT (process, supply voltage, and temperature) and mismatch simulations are reported to prove the robustness of the proposed amplifier

A HIGH PERFORMANCE FULLY DIFFERENTIAL PURE CURRENT MODE OPERATIONAL AMPLIFIER AND ITS APPLICATIONS

In this paper a novel high performance all current-mode fully-differential (FD) Current mode Operational Amplifier (COA) in BIPOLAR technology is presented. The unique true current mode simple structure grants the proposed COA the largest yet reported unity gain frequency while providing low voltage low power operation. Benefiting from some novel ideas, it also exhibits high gain, high common mode rejection ratio (CMRR), high power supply rejection ratio (PSRR), high output impedance, low input impedance and most importantly high current drive capability. Its most important parameters are derived and its performance is proved by PSPICE simulations using 0.8 μm BICMOS process parameters at supply voltage of ±1.2V indicating the values of 82.4 dB,52.3º, 31.5 Ω, 31.78 MΩ, 179.2 dB, 2 mW and 698 MHz for gain, phase margin, input impedance, output impedance, CMRR, power and unity gain frequency respectively. Its CMRR also shows very high frequency of 2.64 GHz at zero dB. Its very high PSRR+/PSRR- of 182 dB/196 dB makes the proposed COA a highly suitable block in Mixed-Mode (SOC) chips. Most favourably it can deliver up to ±1.5 mA yielding a high current drive capability exceeding 25. To demonstrate the performance of the proposed COA, it is used to realize a constant bandwidth voltage amplifier and a high performance Rm amplifier

A 0.3V Rail-to-Rail Three-Stage OTA With High DC Gain and Improved Robustness to PVT Variations

This paper presents a novel 0.3V rail-to-rail body-driven three-stage operational transconductance amplifier (OTA). The proposed OTA architecture allows achieving high DC gain in spite of the bulk-driven input. This is due to the doubled body transconductance at the first and third stages, and to a high gain, gate-driven second stage. The bias current in each branch of the OTA is accurately set through gate-driven or bulk-driven current mirrors, thus guaranteeing an outstanding stability of main OTA performance parameters to PVT variations. In the first stage, the input signals drive the bulk terminals of both NMOS and PMOS transistors in a complementary fashion, allowing a rail-to-rail input common mode range (ICMR). The second stage is a gate-driven, complementary pseudo-differential stage with an high DC gain and a local CMFB. The third stage implements the differential-to-single-ended conversion through a body-driven complementary pseudo-differential pair and a gate-driven current mirror. Thanks to the adoption of two fully differential stages with common mode feedback (CMFB) loop, the common-mode rejection ratio (CMRR) in typical conditions is greatly improved with respect to other ultra-low-voltage (ULV) bulk-driven OTAs. The OTA has been fabricated in a commercial 130nm CMOS process from STMicroelectronics. Its area is about 0.002 mm2 , and power consumption is less than 35nW at the supply-voltage of 0.3V. With a load capacitance of 35pF, the OTA exhibits a DC gain and a unity-gain frequency of about 85dB and 10kHz, respectively

Low Area, Low Power and High Bandwidth Operational Amplifier by 130nm CMOS Technology

A low power and high bandwidth CMOS Operational Amplifier has been designed in 130 nm CMOS Technology by Miller compensation technique and obtained a gain of 107 dB. A loop feedback is used to increase the bandwidth and results the final 3dB bandwidth 65 KHz and Unity gain bandwidth 2.3GHz. The proposed opamp providing 318 dB CMRR, 137 dB PSRR, 4.25 V/us Slew rate and 0.7 mW power dissipation. The overall design is simulated in 130nm digital CMOS technology in PSpice