Concepts for Short Range Millimeter-wave Miniaturized Radar Systems with Built-in Self-Test

This work explores short-range millimeter wave radar systems, with emphasis on miniaturization and overall system cost reduction. The designing and implementation processes, starting from the system level design considerations and characterization of the individual components to final implementation of the proposed architecture are described briefly. Several D-band radar systems are developed and their functionality and performances are demonstrated

Low-Overhead Built-In Self-Test for Advanced RF Transceiver Architectures

abstract: Due to high level of integration in RF System on Chip (SOC), the test access points are limited to the baseband and RF inputs/outputs of the system. This limited access poses a big challenge particularly for advanced RF architectures where calibration of internal parameters is necessary and ensure proper operation. Therefore low-overhead built-in Self-Test (BIST) solution for advanced RF transceiver is proposed. In this dissertation. Firstly, comprehensive BIST solution for RF polar transceivers using on-chip resources is presented. In the receiver, phase and gain mismatches degrade sensitivity and error vector magnitude (EVM). In the transmitter, delay skew between the envelope and phase signals and the finite envelope bandwidth can create intermodulation distortion (IMD) that leads to violation of spectral mask requirements. Characterization and calibration of these parameters with analytical model would reduce the test time and cost considerably. Hence, a technique to measure and calibrate impairments of the polar transceiver in the loop-back mode is proposed. Secondly, robust amplitude measurement technique for RF BIST application and BIST circuits for loop-back connection are discussed. Test techniques using analytical model are explained and BIST circuits are introduced. Next, a self-compensating built-in self-test solution for RF Phased Array Mismatch is proposed. In the proposed method, a sinusoidal test signal with unknown amplitude is applied to the inputs of two adjacent phased array elements and measure the baseband output signal after down-conversion. Mathematical modeling of the circuit impairments and phased array behavior indicates that by using two distinct input amplitudes, both of which can remain unknown, it is possible to measure the important parameters of the phased array, such as gain and phase mismatch. In addition, proposed BIST system is designed and fabricated using IBM 180nm process and a prototype four-element phased-array PCB is also designed and fabricated for verifying the proposed method. Finally, process independent gain measurement via BIST/DUT co-design is explained. Design methodology how to reduce performance impact significantly is discussed. Simulation and hardware measurements results for the proposed techniques show that the proposed technique can characterize the targeted impairments accurately.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

An RF BIST Architecture for Output Stages of Multistandard Radios

Article accepté pour publicationInternational audienceSoftware defined radios (SDR) platforms are in-creasingly complex systems which combine great flexibility and high performance. These two characteristics, together with highly integrated architectures make production test a challenging task. In this paper, we introduce an Radio Frequency (RF) Built-in Self-Test (BIST) strategy based on Periodically Nonuniform Sampling of the signal at the output stages of multistandard radios. We leverage the I/Q ADC channels and the DSP resources to extract the bandpass waveform at the output of the power amplifier (PA). Analytical expressions and simulations show that our time-interleaved conversion scheme is sensitive to time-skew. We show a time-skew estimation technique that allows us to surmount this obstacle. Simulation results show that we can effectively reconstruct the bandpass signal of the output stage using this architecture, opening the way for a complete RF BIST strategy for multistandard radios. Future developments will be focused on an efficient mapping to hardware of our new time-skew estimation for TIADC bandpass conversion

Enhancing Digital Controllability in Wideband RF Transceiver Front-Ends for FTTx Applications

Enhancing the digital controllability of wideband RF transceiver front-ends helps in widening the range of operating conditions and applications in which such systems can be employed. Technology limitations and design challenges often constrain the extensive adoption of digital controllability in RF front-ends. This work focuses on three major aspects associated with the design and implementation of a digitally controllable RF transceiver front-end for enhanced digital control. Firstly, the influence of the choice of semiconductor technology for a system-on-chip integration of digital gain control circuits are investigated. The digital control of gain is achieved by utilizing step attenuators that consist of cascaded switched attenuation stages. A design methodology is presented to evaluate the influence of the chosen technology on the performance of the three conventionally used switched attenuator topologies for desired attenuation levels, and the constraints that the technology suitable for high amplification places on the attenuator performance are examined. Secondly, a novel approach to the integrated implementation of gain slope equalization is presented, and the suitability of the proposed approach for integration within the RF front-end is verified. Thirdly, a sensitivity-aware implementation of a peak power detector is presented. The increased employment of digital gain control also increases the requirements on the sensitivity of the power detector employed for adaptive power and gain control. The design, implementation, and measurement results of a state-of-the-art wideband power detector with high sensitivity and large dynamic range are presented. The design is optimized to provide a large offset cancellation range, and the influence of offset cancellation circuits on the sensitivity of the power detector is studied. Moreover, design considerations for high sensitivity performance of the power detector are investigated, and the noise contributions from individual sub-circuits are evaluated. Finally, a wideband RF transceiver front-end is realized using a commercially available SiGe BiCMOS technology to demonstrate the enhancements in the digital controllability of the system. The RF front-end has a bandwidth of 500 MHz to 2.5 GHz, an input dynamic range of 20 dB, a digital gain control range larger than 30 dB, a digital gain slope equalization range from 1.49 dB/GHz to 3.78 dB/GHz, and employs a power detector with a sensitivity of -56 dBm and dynamic range of 64 dB. The digital control in the RF front-end is implemented using an on-chip serial-parallel-interface (SPI) that is controlled by an external micro-controller. A prototype implementation of the RF front-end system is presented as part of an RFIC intended for use in optical transceiver modules for fiber-to-the-x applications

In-field Built-in Self-test for Measuring RF Transmitter Power and Gain

abstract: RF transmitter manufacturers go to great extremes and expense to ensure that their product meets the RF output power requirements for which they are designed. Therefore, there is an urgent need for in-field monitoring of output power and gain to bring down the costs of RF transceiver testing and ensure product reliability. Built-in self-test (BIST) techniques can perform such monitoring without the requirement for expensive RF test equipment. In most BIST techniques, on-chip resources, such as peak detectors, power detectors, or envelope detectors are used along with frequency down conversion to analyze the output of the design under test (DUT). However, this conversion circuitry is subject to similar process, voltage, and temperature (PVT) variations as the DUT and affects the measurement accuracy. So, it is important to monitor BIST performance over time, voltage and temperature, such that accurate in-field measurements can be performed. In this research, a multistep BIST solution using only baseband signals for test analysis is presented. An on-chip signal generation circuit, which is robust with respect to time, supply voltage, and temperature variations is used for self-calibration of the BIST system before the DUT measurement. Using mathematical modelling, an analytical expression for the output signal is derived first and then test signals are devised to extract the output power of the DUT. By utilizing a standard 180nm IBM7RF CMOS process, a 2.4GHz low power RF IC incorporated with the proposed BIST circuitry and on-chip test signal source is designed and fabricated. Experimental results are presented, which show this BIST method can monitor the DUT’s output power with +/- 0.35dB accuracy over a 20dB power dynamic range.Dissertation/ThesisMasters Thesis Electrical Engineering 201

Using temperature as observable of the frequency response of RF CMOS amplifiers

The power dissipated by the devices of an integrated circuit can be considered a signature of the circuit's performance. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements on the silicon surface. In this paper, the frequency response of a RF LNA is observed by measuring spectral components of the sensed temperature. Results prove that temperature can be used to debug and observe figures of merit of analog blocks in a RFIC. Experimental measurements have been done in a 0.25 mum CMOS process. Laser probing techniques have been used as temperature sensors; specifically, a thermoreflectometer and a Michaelson interferometer.Peer ReviewedPostprint (author's final draft

Built-in self test of RF subsystems

textWith the rapid development of wireless and wireline communications, a variety of new standards and applications are emerging in the marketplace. In order to achieve higher levels of integration, RF circuits are frequently embedded into System on Chip (SoC) or System in Package (SiP) products. These developments, however, lead to new challenges in manufacturing test time and cost. Use of traditional RF test techniques requires expensive high frequency test instruments and long test time, which makes test one of the bottlenecks for reducing IC costs. This research is in the area of built-in self test technique for RF subsystems. In the test approach followed in this research, on-chip detectors are used to calculate circuits specifications, and data converters are used to collect the data for analysis by an on-chip processor. A novel on-chip amplitude detector has been designed and optimized for RF circuit specification test. By using on-chip detectors, both the system performance and specifications of the individual components can be accurately measured. On-chip measurement results need to be collected by Analog to Digital Converters (ADCs). A novel time domain, low power ADC has been designed for this purpose. The ADC architecture is based on a linear voltage controlled delay line. Using this structure results in a linear transfer function for the input dependent delay. The time delay difference is then compared to a reference to generate a digital code. Two prototype test chips were fabricated in commercial CMOS processes. One is for the RF transceiver front end with on-chip detectors; the other is for the test ADC. The 940MHz RF transceiver front-end was implemented with on-chip detectors in a 0.18 [micrometer] CMOS technology. The chips were mounted onto RF Printed Circuit Boards (PCBs), with tunable power supply and biasing knobs. The detector was characterized with measurements which show that the detector keeps linear performance over a wide input amplitude range of 500mV. Preliminary simulation and measurements show accurate transceiver performance prediction under process variations. A 300MS/s 6 bit ADC was designed using the novel time domain architecture in a 0.13 [micrometer] standard digital CMOS process. The simulation results show 36.6dB Signal to Noise Ratio (SNR), 34.1dB Signal to Noise and Distortion Ratio (SNDR) for 99MHz input, Differential Non-Linearity (DNL)<0.2 Least Significant Bit (LSB), and Integral Non-Linearity (INL)<0.5LSB. Overall chip power is 2.7mW with a 1.2V power supply. The built-in detector RF test was extended to a full transceiver RF front end test with a loop-back setup, so that measurements can be made to verify the benefits of the technique. The application of the approach to testing gain, linearity and noise figure was investigated. New detector types are also evaluated. In addition, the low-power delay-line based ADC was characterized and improved to facilitate gathering of data from the detector. Several improved ADC structures at the system level are also analyzed. The built-in detector based RF test technique enables the cost-efficient test for SoCs.Electrical and Computer Engineerin

System-level design and RF front-end implementation for a 3-10ghz multiband-ofdm ultrawideband receiver and built-in testing techniques for analog and rf integrated circuits

This work consists of two main parts: a) Design of a 3-10GHz UltraWideBand (UWB) Receiver and b) Built-In Testing Techniques (BIT) for Analog and RF circuits. The MultiBand OFDM (MB-OFDM) proposal for UWB communications has received significant attention for the implementation of very high data rate (up to 480Mb/s) wireless devices. A wideband LNA with a tunable notch filter, a downconversion quadrature mixer, and the overall radio system-level design are proposed for an 11-band 3.4-10.3GHz direct conversion receiver for MB-OFDM UWB implemented in a 0.25mm BiCMOS process. The packaged IC includes an RF front-end with interference rejection at 5.25GHz, a frequency synthesizer generating 11 carrier tones in quadrature with fast hopping, and a linear phase baseband section with 42dB of gain programmability. The receiver IC mounted on a FR-4 substrate provides a maximum gain of 67-78dB and NF of 5-10dB across all bands while consuming 114mA from a 2.5V supply. Two BIT techniques for analog and RF circuits are developed. The goal is to reduce the test cost by reducing the use of analog instrumentation. An integrated frequency response characterization system with a digital interface is proposed to test the magnitude and phase responses at different nodes of an analog circuit. A complete prototype in CMOS 0.35mm technology employs only 0.3mm2 of area. Its operation is demonstrated by performing frequency response measurements in a range of 1 to 130MHz on 2 analog filters integrated on the same chip. A very compact CMOS RF RMS Detector and a methodology for its use in the built-in measurement of the gain and 1dB compression point of RF circuits are proposed to address the problem of on-chip testing at RF frequencies. The proposed device generates a DC voltage proportional to the RMS voltage amplitude of an RF signal. A design in CMOS 0.35mm technology presents and input capacitance <15fF and occupies and area of 0.03mm2. The application of these two techniques in combination with a loop-back test architecture significantly enhances the testability of a wireless transceiver system

Built-in-self-test of RF front-end circuitry

Fuelled by the ever increasing demand for wireless products and the advent of deep submicron CMOS, RF ICs have become fairly commonplace in the semiconductor market. This has given rise to a new breed of Systems-On-Chip (SOCs) with RF front-ends tightly integrated along with digital, analog and mixed signal circuitry. However, the reliability of the integrated RF front-end continues to be a matter of significant concern and considerable research. A major challenge to the reliability of RF ICs is the fact that their performance is also severely degraded by wide tolerances in on-chip passives and package parasitics, in addition to process related faults. Due to the absence of contact based testing solutions in embedded RF SOCs (because the very act of probing may affect the performance of the RF circuit), coupled with the presence of very few test access nodes, a Built In Self Test approach (BiST) may prove to be the most efficient test scheme. However due to the associated challenges, a comprehensive and low-overhead BiST methodology for on-chip testing of RF ICs has not yet been reported in literature. In the current work, an approach to RF self-test that has hitherto been unexplored both in literature and in the commercial arena is proposed. A sensitive current monitor has been used to extract variations in the supply current drawn by the circuit-under-test (CUT). These variations are then processed in time and frequency domain to develop signatures. The acquired signatures can then be mapped to specific behavioral anomalies and the locations of these anomalies. The CUT is first excited by simple test inputs that can be generated on-chip. The current monitor extracts the corresponding variations in the supply current of the CUT, thereby creating signatures that map to various performance metrics of the circuit. These signatures can then be post-processed by low overhead on-chip circuitry and converted into an accessible form. To be successful in the RF domain any BIST architecture must be minimally invasive, reliable, offer good fault coverage and present low real estate and power overheads. The current-based self-test approach successfully addresses all these concerns. The technique has been applied to RF Low Noise Amplifiers, Mixers and Voltage Controlled Oscillators. The circuitry and post-processing techniques have also been demonstrated in silicon (using the IBM 0.25 micron RF CMOS process). The entire self-test of the RF front-end can be accomplished with a total test time of approximately 30µs, which is several orders of magnitude better than existing commercial test schemes