A Multi-Code Analysis Toolkit for Astrophysical Simulation Data

The analysis of complex multiphysics astrophysical simulations presents a unique and rapidly growing set of challenges: reproducibility, parallelization, and vast increases in data size and complexity chief among them. In order to meet these challenges, and in order to open up new avenues for collaboration between users of multiple simulation platforms, we present yt (available at http://yt.enzotools.org/), an open source, community-developed astrophysical analysis and visualization toolkit. Analysis and visualization with yt are oriented around physically relevant quantities rather than quantities native to astrophysical simulation codes. While originally designed for handling Enzo's structure adaptive mesh refinement (AMR) data, yt has been extended to work with several different simulation methods and simulation codes including Orion, RAMSES, and FLASH. We report on its methods for reading, handling, and visualizing data, including projections, multivariate volume rendering, multi-dimensional histograms, halo finding, light cone generation and topologically-connected isocontour identification. Furthermore, we discuss the underlying algorithms yt uses for processing and visualizing data, and its mechanisms for parallelization of analysis tasks.Comment: 18 pages, 6 figures, emulateapj format. Resubmitted to Astrophysical Journal Supplement Series with revisions from referee. yt can be found at http://yt.enzotools.org

Full Wafer Redistribution and Wafer Embedding as Key Technologies for a Multi-Scale Neuromorphic Hardware Cluster

Together with the Kirchhoff-Institute for Physics(KIP) the Fraunhofer IZM has developed a full wafer redistribution and embedding technology as base for a large-scale neuromorphic hardware system. The paper will give an overview of the neuromorphic computing platform at the KIP and the associated hardware requirements which drove the described technological developments. In the first phase of the project standard redistribution technologies from wafer level packaging were adapted to enable a high density reticle-to-reticle routing on 200mm CMOS wafers. Neighboring reticles were interconnected across the scribe lines with an 8{\mu}m pitch routing based on semi-additive copper metallization. Passivation by photo sensitive benzocyclobutene was used to enable a second intra-reticle routing layer. Final IO pads with flash gold were generated on top of each reticle. With that concept neuromorphic systems based on full wafers could be assembled and tested. The fabricated high density inter-reticle routing revealed a very high yield of larger than 99.9%. In order to allow an upscaling of the system size to a large number of wafers with feasible effort a full wafer embedding concept for printed circuit boards was developed and proven in the second phase of the project. The wafers were thinned to 250{\mu}m and laminated with additional prepreg layers and copper foils into a core material. After lamination of the PCB panel the reticle IOs of the embedded wafer were accessed by micro via drilling, copper electroplating, lithography and subtractive etching of the PCB wiring structure. The created wiring with 50um line width enabled an access of the reticle IOs on the embedded wafer as well as a board level routing. The panels with the embedded wafers were subsequently stressed with up to 1000 thermal cycles between 0C and 100C and have shown no severe failure formation over the cycle time.Comment: Accepted at EPTC 201

Through Silicon Via Field-Effect Transistor with Hafnia-based Ferroelectrics and the Doping of Silicon by Gallium Implantation Utilizing a Focused Ion Beam System

3-dimensional integration has become a standard to further increase the transistor density and to enhance the integrated functionality in microchips. Integrated circuits are stacked on top of each other and copper-filled through-silicon VIAs (TSVs) are the industry-accepted choice for their vertical electrical connection. The aim of this work is to functionalize the TSVs by implementing vertical field-effect transistors inside the via holes. The front and back sides of 200 ... 300 µm thin silicon wafers were doped to create the source/drain regions of n- and p-FETs. The TSVFETs showed very stable saturation currents and on/off current ratios of about 10^6 (n-TSVFET) and 10^3 (p-TSVFET) for a gate voltage magnitude of 4V. The use of hafnium zirconium oxide on a thin SiO_2 interface layer as gate dielectric material in a p-TSVFET, enabled the implementation of a charge trapping memory inside the TSVs, showing a memory window of about 1V. This allows the non-volatile storage of the transistor on/off state. In addition, the demonstration of the use of gallium as the source/drain dopant in planar p-FET test structures (ion implanted from a focused ion beam tool) paves the way for maskless doping and for a process flow with a low thermal budget. It was shown, that ion implanted gallium can be activated and annealed at relatively low temperatures of 500 °C ... 700 °C.:Abstract / Kurzzusammenfassung Danksagung Index I List of Figures III List of Tables X List of Symbols XI List of Abbreviations XV 1 Introduction 1 2 Fundamentals 5 2.1 Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) 5 2.1.1 Historical Development - Technological Advancements 7 2.1.2 Field-Effect Transistors in Semiconductor Memories 10 2.2 3D Integration and the Use of TSVs (Through Silicon VIAs) 16 2.3 Doping of Silicon 19 2.3.1 Doping by Thermal Diffusion 20 2.3.2 Doping by Ion Implantation 22 3 Electrical Characterization 24 3.1 Resistivity Measurements 24 3.1.1 Resistance Determination by Four-Point Probes Measurement 24 3.1.2 Contact Resistivity 27 3.1.3 Doping Concentration 32 3.2 C-V Measurements 35 3.2.1 Fundamentals of MIS C-V Measurements 35 3.2.2 Interpretation of C-V Measurements 37 3.3 Transistor Measurements 41 3.3.1 Output Characteristics (I_D-V_D) 41 3.3.2 Transfer Characteristics (I_D-V_G) 42 4 TSV Transistor 45 4.1 Idea and Motivation 45 4.2 Design and Layout of the TSV Transistor 47 4.2.1 Design of the TSV Transistor Structures 47 4.2.2 Test Structures for Planar FETs 48 5 Variations in the Integration Scheme of the TSV Transistor 51 5.1 Doping by Diffusion from Thin Films 51 5.1.1 Determination of Doping Profiles 52 5.1.2 n- and p- TSVFETs Doped Manufactures by the Use of the Diffusion Technique 59 5.2 Ferroelectric Hafnium-Zirconium-Oxide (HZO) in the Gate Stack 81 5.2.1 Planar ferroelectric p-MOSFETs Doped by Thermal Diffusion 82 5.2.2 p-TSVFETs with Hafnium-Zirconium-Oxide Metal Gate 90 5.3 Doping by Ion Implantation of Gallium with a Focused Ion Beam (FIB) Tool 96 5.3.1 Ga doped Si Diodes 97 5.3.2 Planar p-MOSFETs Doped by Ga Implantation 108 5.3.3 Proposal for a parallel integration of Cu TSVs and p-TSVFETs 117 6 Summary and Outlook 120 Bibliography XVIII A Appendix XXXVI A.1 Resistivity and Dopant Density XXXVI A.2 Mask set for the TSVFET XXXVII A.3 Mask Design of the Planar Test Structures XXXVIII Curriculum Vitae XXXIX List of Scientific Publications XL

Rethinking the I/O Stack for Persistent Memory

Modern operating systems have been designed around the hypotheses that (a) memory is both byte-addressable and volatile and (b) storage is block addressable and persistent. The arrival of new Persistent Memory (PM) technologies, has made these assumptions obsolete. Despite much of the recent work in this space, the need for consistently sharing PM data across multiple applications remains an urgent, unsolved problem. Furthermore, the availability of simple yet powerful operating system support remains elusive. In this dissertation, we propose and build The Region System – a high-performance operating system stack for PM that implements usable consistency and persistence for application data. The region system provides support for consistently mapping and sharing data resident in PM across user application address spaces. The region system creates a novel IPI based PMSYNC operation, which ensures atomic persistence of mapped pages across multiple address spaces. This allows applications to consume PM using the well understood and much desired memory like model with an easy-to-use interface. Next, we propose a metadata structure without any redundant metadata to reduce CPU cache flushes. The high-performance design minimizes the expensive PM ordering and durability operations by embracing a minimalistic approach to metadata construction and management. To strengthen the case for the region system, in this dissertation, we analyze different types of applications to identify their dependence on memory mapped data usage, and propose user level libraries LIBPM-R and LIBPMEMOBJ-R to support shared persistent containers. The user level libraries along with the region system demonstrate a comprehensive end-to-end software stack for consuming the PM devices

High-Density Solid-State Memory Devices and Technologies

This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms