Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires

We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the Kubo-Greenwood transport analysis. A real-space wave function study is undertaken and the outcomes are interpreted together with the findings of ballistic transport calculations. This reveals that ballistic transport edge lies tens to hundreds of millielectron volts above the lowest unoccupied molecular orbital, with a substantial number of localized states appearing in between, as well as above the former. We show that these localized states are not due to the oxide interface, but rather core silicon-derived. They manifest the wave nature of electrons brought to foreground by the reflections originating from NW junctions and bends. Hence, we show that the crossings and kinks of even ultraclean Si NWs possess a conduction band tail without a recourse to atomistic disorder.Comment: Published version, 7 pages, 9 figure

Energetics, forces, and quantized conductance in jellium modeled metallic nanowires

Energetics and quantized conductance in jellium modeled nanowires are investigated using the local density functional based shell correction method, extending our previous study of uniform in shape wires [C. Yannouleas and U. Landman, J. Phys. Chem. B 101, 5780 (1997)] to wires containing a variable shaped constricted region. The energetics of the wire (sodium) as a function of the length of the volume conserving, adiabatically shaped constriction leads to formation of self selecting magic wire configurations. The variations in the energy result in oscillations in the force required to elongate the wire and are directly correlated with the stepwise variations of the conductance of the nanowire in units of 2e^2/h. The oscillatory patterns in the energetics and forces, and the correlated stepwise variation in the conductance are shown, numerically and through a semiclassical analysis, to be dominated by the quantized spectrum of the transverse states at the narrowmost part of the constriction in the wire.Comment: Latex/Revtex, 11 pages with 5 Postscript figure

Electronic resonance states in metallic nanowires during the breaking process simulated with the ultimate jellium model

We investigate the elongation and breaking process of metallic nanowires using the ultimate jellium model in self-consistent density-functional calculations of the electron structure. In this model the positive background charge deforms to follow the electron density and the energy minimization determines the shape of the system. However, we restrict the shape of the wires by assuming rotational invariance about the wire axis. First we study the stability of infinite wires and show that the quantum mechanical shell-structure stabilizes the uniform cylindrical geometry at given magic radii. Next, we focus on finite nanowires supported by leads modeled by freezing the shape of a uniform wire outside the constriction volume. We calculate the conductance during the elongation process using the adiabatic approximation and the WKB transmission formula. We also observe the correlated oscillations of the elongation force. In different stages of the elongation process two kinds of electronic structures appear: one with extended states throughout the wire and one with an atom-cluster like unit in the constriction and with well localized states. We discuss the origin of these structures.Comment: 11 pages, 8 figure

First-principles calculation of mechanical properties of Si <001> nanowires and comparison to nanomechanical theory

We report the results of first-principles density functional theory calculations of the Young's modulus and other mechanical properties of hydrogen-passivated Si nanowires. The nanowires are taken to have predominantly {100} surfaces, with small {110} facets according to the Wulff shape. The Young's modulus, the equilibrium length and the constrained residual stress of a series of prismatic beams of differing sizes are found to have size dependences that scale like the surface area to volume ratio for all but the smallest beam. The results are compared with a continuum model and the results of classical atomistic calculations based on an empirical potential. We attribute the size dependence to specific physical structures and interactions. In particular, the hydrogen interactions on the surface and the charge density variations within the beam are quantified and used both to parameterize the continuum model and to account for the discrepancies between the two models and the first-principles results.Comment: 14 pages, 10 figure

Dependence of the electronic structure of self-assembled InGaAs/GaAs quantum dots on height and composition

While electronic and spectroscopic properties of self-assembled In_{1-x}Ga_{x}As/GaAs dots depend on their shape, height and alloy compositions, these characteristics are often not known accurately from experiment. This creates a difficulty in comparing measured electronic and spectroscopic properties with calculated ones. Since simplified theoretical models (effective mass, k.p, parabolic models) do not fully convey the effects of shape, size and composition on the electronic and spectroscopic properties, we offer to bridge the gap by providing accurately calculated results as a function of the dot height and composition. Prominent results are the following. (i) Regardless of height and composition, the electron levels form shells of nearly degenerate states. In contrast, the hole levels form shells only in flat dots and near the highest hole level (HOMO). (ii) In alloy dots, the electrons' ``s-p'' splitting depends weakly on height, while the ``p-p'' splitting depends non-monotonically. In non-alloyed InAs/GaAs dots, both these splittings depend weakly on height. For holes in alloy dots, the ``s-p'' splitting decreases with increasing height, whereas the ``p-p'' splitting remains nearly unchaged. Shallow, non-alloyed dots have a ``s-p'' splitting of nearly the same magnitude, whereas the ``p-p'' splitting is larger. (iii) As height increases, the ``s'' and ``p'' character of the wavefunction of the HOMO becomes mixed, and so does the heavy- and light-hole character. (iv) In alloy dots, low-lying hole states are localized inside the dot. Remarkably, in non-alloyed InAs/GaAs dots these states become localized at the interface as height increases. This localization is driven by the biaxial strain present in the nanostructure.Comment: 14 pages, 12 figure

Role of local fields in the optical properties of silicon nanocrystals using the tight binding approach

The role of local fields in the optical response of silicon nanocrystals is analyzed using a tight binding approach. Our calculations show that, at variance with bulk silicon, local field effects dramatically modify the silicon nanocrystal optical response. An explanation is given in terms of surface electronic polarization and confirmed by the fair agreement between the tight binding results and that of a classical dielectric model. From such a comparison, it emerges that the classical model works not only for large but also for very small nanocrystals. Moreover, the dependence on size of the optical response is discussed, in particular treating the limit of large size nanocrystals.Comment: 4 pages, 4 figure