Low-cost and low-topography fabrication of multilayer interconnections for microfluidic devices

Multilayer interconnections are needed for microdevices with a large number of independent electrodes. A multi-level photolithographic process is commonly employed to provide multilayer interconnections in integrated circuit (IC) devices, but it is often too expensive for large-area or disposable devices frequently needed for microfluidics. The printed circuit board (PCB) can provide multilayer interconnection at low cost, but its rough topography poses a challenge for small droplets to slide over. Here we report a low-cost fabrication of low-topography multilayer interconnects by selective and controlled anodization of thin-film metal layers. The process utilizes anodization of metal (tantalum in this paper) or, more specifically, repetitions of a partial anodization to form insulation layers between conductive layers and a full anodization to form isolating regions between electrodes, replacing the usual process of depositing, planarizing, and etching insulation layers. After verifying the electric connections and insulations as intended, the developed method is applied to electrowetting-on-dielectric (EWOD), whose complex microfluidic products are currently built on PCB or thin-film transistor (TFT) substrates. To demonstrate the utility, we fabricated a 3 metal-layer EWOD device with steps (surface topography) less than 1 micrometer (vs. > 10 micrometers of PCB EWOD devices) and confirmed basic digital microfluidic operations

Progress in Nanoporous Templates: Beyond Anodic Aluminum Oxide and Towards Functional Complex Materials

Successful synthesis of ordered porous, multi-component complex materials requires a series of coordinated processes, typically including fabrication of a master template, deposition of materials within the pores to form a negative structure, and a third deposition or etching process to create the final, functional template. Translating the utility and the simplicity of the ordered nanoporous geometry of binary oxide templates to those comprising complex functional oxides used in energy, electronic, and biology applications has been met with numerous critical challenges. This review surveys the current state of commonly used complex material nanoporous template synthesis techniques derived from the base anodic aluminum oxide (AAO) geometry

Nanowire Zinc Oxide MOSFET Pressure Sensor

Fabrication and characterization of a new kind of pressure sensor using self-assembly Zinc Oxide (ZnO) nanowires on top of the gate of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is presented. Self-assembly ZnO nanowires were fabricated with a diameter of 80 nm and 800 nm height (80:8 aspect ratio) on top of the gate of the MOSFET. The sensor showed a 110% response in the drain current due to pressure, even with the expected piezoresistive response of the silicon device removed from the measurement. The pressure sensor was fabricated through low temperature bottom up ultrahigh aspect ratio ZnO nanowire growth using anodic alumina oxide (AAO) templates. The pressure sensor has two main components: MOSFET and ZnO nanowires. Silicon Dioxide growth, photolithography, dopant diffusion, and aluminum metallization were used to fabricate a basic MOSFET. In the other hand, a combination of aluminum anodization, alumina barrier layer removal, ZnO atomic layer deposition (ALD), and wet etching for nanowire release were optimized to fabricate the sensor on a silicon wafer. The ZnO nanowire fabrication sequence presented is at low temperature making it compatible with CMOS technology

Effect of anodization on the surface characteristics and electrochemical behaviour of zirconium in artificial saliva

The paper is focused on elaboration of ZrO2 films on pure zirconium via anodizing inphosphoric acid with and without fluoride at constant potentials of 30 V and 60 V. Thestructure and composition of the films were investigated using scanning electronicmicroscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. The composition ofthe oxides formed at both potentials can be identified as monoclinic ZrO2. In addition to Zrand O, the layers formed in phosphoric acid contain phosphorus originating from thephosphoric acid. When the phosphoric acid solution contains NaF, fluorine is alsoincorporated into the oxide layer. The oxides formed at a higher voltage have greaterroughness than those formed at 30 V. Anodized samples exhibit smaller current densitiesduring anodic polarization compared to the as-received zirconium covered with native oxide.Fil: Romonti, Daniela E.. Faculty of Applied Chemistry and Materials Science; RumaniaFil: Gomez Sanchez, Andrea Valeria. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Milošev, Ingrid. Jožef Stefan Institute; EsloveniaFil: Demetrescu, Ioana. Faculty of Applied Chemistry and Materials Science; RumaniaFil: Ceré, Silvia. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentin

Fabrication and structural characterization of highly ordered sub-100-nm planar magnetic nanodot arrays over 1 cm2 coverage area

Porous alumina masks are fabricated by anodization of aluminum films grown on both semiconducting and insulating substrates. For these self-assembled alumina masks, pore diameters and periodicities within the ranges of 10–130 and 20–200nm, respectively, can be controlled by varying anodization conditions. 20nm periodicities correspond to pore densities in excess of 1012 per square inch, close to the holy grail of media with 1Tbit∕in.2 density. With these alumina masks, ordered sub-100-nm planar ferromagnetic nanodot arrays covering over 1cm2 were fabricated by electron beam evaporation and subsequent mask lift-off. Moreover, exchange-biased bilayer nanodots were fabricated using argon-ion milling. The average dot diameter and periodicity are tuned between 25 and 130nm and between 45 and 200nm, respectively. Quantitative analyses of scanning electron microscopy (SEM) images of pore and dot arrays show a high degree of hexagonal ordering and narrow size distributions. The dot periodicity obtained from grazi..

Effect of the anodization voltage on the porewidening rate of nanoporous anodic alumina

A detailed study of the pore-widening rate of nanoporous anodic alumina layers as a function of the anodization voltage was carried out. The study focuses on samples produced under the same electrolyte and concentration but different anodization voltages within the self-ordering regime. By means of ellipsometry-based optical characterization, it is shown that in the porewidening process, the porosity increases at a faster rate for lower anodization voltages. This opens the possibility of obtaining three-dimensional nanostructured nanoporous anodic alumina with controlled thickness and refractive index of each layer, and with a refractive index difference of up to 0.24 between layers, for samples produced with oxalic acid electrolytes