44 research outputs found

    Phase Noise Analyses and Measurements in the Hybrid Memristor-CMOS Phase-Locked Loop Design and Devices Beyond Bulk CMOS

    Get PDF
    Phase-locked loop (PLLs) has been widely used in analog or mixed-signal integrated circuits. Since there is an increasing market for low noise and high speed devices, PLLs are being employed in communications. In this dissertation, we investigated phase noise, tuning range, jitter, and power performances in different architectures of PLL designs. More energy efficient devices such as memristor, graphene, transition metal di-chalcogenide (TMDC) materials and their respective transistors are introduced in the design phase-locked loop. Subsequently, we modeled phase noise of a CMOS phase-locked loop from the superposition of noises from its building blocks which comprises of a voltage-controlled oscillator, loop filter, frequency divider, phase-frequency detector, and the auxiliary input reference clock. Similarly, a linear time-invariant model that has additive noise sources in frequency domain is used to analyze the phase noise. The modeled phase noise results are further compared with the corresponding phase-locked loop designs in different n-well CMOS processes. With the scaling of CMOS technology and the increase of the electrical field, the problem of short channel effects (SCE) has become dominant, which causes decay in subthreshold slope (SS) and positive and negative shifts in the threshold voltages of nMOS and pMOS transistors, respectively. Various devices are proposed to continue extending Moore\u27s law and the roadmap in semiconductor industry. We employed tunnel field effect transistor owing to its better performance in terms of SS, leakage current, power consumption etc. Applying an appropriate bias voltage to the gate-source region of TFET causes the valence band to align with the conduction band and injecting the charge carriers. Similarly, under reverse bias, the two bands are misaligned and there is no injection of carriers. We implemented graphene TFET and MoS2 in PLL design and the results show improvements in phase noise, jitter, tuning range, and frequency of operation. In addition, the power consumption is greatly reduced due to the low supply voltage of tunnel field effect transistor

    Organic Bioelectronics Development in Italy: A Review

    Get PDF
    In recent years, studies concerning Organic Bioelectronics have had a constant growth due to the interest in disciplines such as medicine, biology and food safety in connecting the digital world with the biological one. Specific interests can be found in organic neuromorphic devices and organic transistor sensors, which are rapidly growing due to their low cost, high sensitivity and biocompatibility. This trend is evident in the literature produced in Italy, which is full of breakthrough papers concerning organic transistors-based sensors and organic neuromorphic devices. Therefore, this review focuses on analyzing the Italian production in this field, its trend and possible future evolutions

    Stochastic-Based Computing with Emerging Spin-Based Device Technologies

    Get PDF
    In this dissertation, analog and emerging device physics is explored to provide a technology platform to design new bio-inspired system and novel architecture. With CMOS approaching the nano-scaling, their physics limits in feature size. Therefore, their physical device characteristics will pose severe challenges to constructing robust digital circuitry. Unlike transistor defects due to fabrication imperfection, quantum-related switching uncertainties will seriously increase their susceptibility to noise, thus rendering the traditional thinking and logic design techniques inadequate. Therefore, the trend of current research objectives is to create a non-Boolean high-level computational model and map it directly to the unique operational properties of new, power efficient, nanoscale devices. The focus of this research is based on two-fold: 1) Investigation of the physical hysteresis switching behaviors of domain wall device. We analyze phenomenon of domain wall device and identify hysteresis behavior with current range. We proposed the Domain-Wall-Motion-based (DWM) NCL circuit that achieves approximately 30x and 8x improvements in energy efficiency and chip layout area, respectively, over its equivalent CMOS design, while maintaining similar delay performance for a one bit full adder. 2) Investigation of the physical stochastic switching behaviors of Mag- netic Tunnel Junction (MTJ) device. With analyzing of stochastic switching behaviors of MTJ, we proposed an innovative stochastic-based architecture for implementing artificial neural network (S-ANN) with both magnetic tunneling junction (MTJ) and domain wall motion (DWM) devices, which enables efficient computing at an ultra-low voltage. For a well-known pattern recognition task, our mixed-model HSPICE simulation results have shown that a 34-neuron S-ANN implementation, when compared with its deterministic-based ANN counterparts implemented with digital and analog CMOS circuits, achieves more than 1.5 ~ 2 orders of magnitude lower energy consumption and 2 ~ 2.5 orders of magnitude less hidden layer chip area

    Simulation and implementation of novel deep learning hardware architectures for resource constrained devices

    Get PDF
    Corey Lammie designed mixed signal memristive-complementary metal–oxide–semiconductor (CMOS) and field programmable gate arrays (FPGA) hardware architectures, which were used to reduce the power and resource requirements of Deep Learning (DL) systems; both during inference and training. Disruptive design methodologies, such as those explored in this thesis, can be used to facilitate the design of next-generation DL systems

    Memristor-based design solutions for mitigating parametric variations in IoT applications

    Get PDF
    PhD ThesisRapid advancement of the internet of things (IoT) is predicated by two important factors of the electronic technology, namely device size and energy-efficiency. With smaller size comes the problem of process, voltage and temperature (PVT) variations of delays which are the key operational parameters of devices. Parametric variability is also an obstacle on the way to allowing devices to work in systems with unpredictable power sources, such as those powered by energy-harvesters. Designers tackle these problems holistically by developing new techniques such as asynchronous logic, where mechanisms such as matching delays are widely used to adapt to delay variations. To mitigate energy efficiency and power interruption issues the matching delays need to be ideally retained in a non-volatile storage. Meanwhile, a resistive memory called memristor becomes a promising component for power-restricted applications owing to its inherent non-volatility. While providing non-volatility, the use of memristor in delay matching incurs some power overheads. This creates the first challenge on the way of introducing memristors into IoT devices for the delay matching. Another important factor affecting the use of memristors in IoT devices is the dependence of the memristor value on temperature. For example, a memristance decoder used in the memristor-based components must be able to correct the read data without incurring significant overheads on the overall system. This creates the second challenge for overcoming the temperature effect in memristance decoding process. In this research, we propose methods for improving PVT tolerance and energy characteristics of IoT devices from the perspective of above two main challenges: (i) utilising memristor to enhance the energy efficiency of the delay element (DE), and (ii) improving the temperature awareness and energy robustness of the memristance decoder. For memristor-based delay element (MemDE), we applied a memristor between two inverters to vary the path resistance, which determines the RC delay. This allows power saving due to the low number of switching components and the absence of external delay storage. We also investigate a solution for avoiding the unintended tuning (UT) and a timing model to estimate the proper pulse width for memristance tuning. The simulation results based on UMC 180nm technology and VTEAM model show the MemDE can provide the delay between 0.55ns and 1.44ns which is compatible to the 4-bit multiplexerbased delay element (MuxDE) in the same technology while consuming thirteen times less power. The key contribution within (i) is the development of low-power MemDE to mitigate the timing mismatch caused by PVT variations. To estimate the temperature effect on memristance, we develop an empirical temperature model which fits both titanium dioxide and silver chalcogenide memristors. The temperature experiments are conducted using the latter device, and the results confirm the validity of the proposed model with the accuracy R-squared >88%. The memristance decoder is designed to deliver two key advantages. Firstly, the temperature model is integrated into the VTEAM model to enable the temperature compensation. Secondly, it supports resolution scalability to match the energy budget. The simulation results of the 2-bit decoder based on UMC 65nm technology show the energy can be varied between 49fJ and 98fJ. This is the second major contribution to address the challenge (ii). This thesis gives future research directions into an in-depth study of the memristive electronics as a variation-robust energy-efficient design paradigm and its impact on developing future IoT applications.sponsored by the Royal Thai Governmen

    Design of Neuromemristive Systems for Visual Information Processing

    Get PDF
    Neuromemristive systems (NMSs) are brain-inspired, adaptive computer architectures based on emerging resistive memory technology (memristors). NMSs adopt a mixed-signal design approach with closely-coupled memory and processing, resulting in high area and energy efficiencies. Previous work suggests that NMSs could even supplant conventional architectures in niche application domains such as visual information processing. However, given the infancy of the field, there are still several obstacles impeding the transition of these systems from theory to practice. This dissertation advances the state of NMS research by addressing open design problems spanning circuit, architecture, and system levels. Novel synapse, neuron, and plasticity circuits are designed to reduce NMSs’ area and power consumption by using current-mode design techniques and exploiting device variability. Circuits are designed in a 45 nm CMOS process with memristor models based on multilevel (W/Ag-chalcogenide/W) and bistable (Ag/GeS2/W) device data. Higher-level behavioral, power, area, and variability models are ported into MATLAB to accelerate the overall simulation time. The circuits designed in this work are integrated into neural network architectures for visual information processing tasks, including feature detection, clustering, and classification. Networks in the NMSs are trained with novel stochastic learning algorithms that achieve 3.5 reduction in circuit area, reduced design complexity, and exhibit similar convergence properties compared to the least-mean-squares algorithm. This work also examines the effects of device-level variations on NMS performance, which has received limited attention in previous work. The impact of device variations is reduced with a partial on-chip training methodology that enables NMSs to be configured with relatively sophisticated algorithms (e.g. resilient backpropagation), while maximizing their area-accuracy tradeoff

    Potential and Challenges of Analog Reconfigurable Computation in Modern and Future CMOS

    Get PDF
    In this work, the feasibility of the floating-gate technology in analog computing platforms in a scaled down general-purpose CMOS technology is considered. When the technology is scaled down the performance of analog circuits tends to get worse because the process parameters are optimized for digital transistors and the scaling involves the reduction of supply voltages. Generally, the challenge in analog circuit design is that all salient design metrics such as power, area, bandwidth and accuracy are interrelated. Furthermore, poor flexibility, i.e. lack of reconfigurability, the reuse of IP etc., can be considered the most severe weakness of analog hardware. On this account, digital calibration schemes are often required for improved performance or yield enhancement, whereas high flexibility/reconfigurability can not be easily achieved. Here, it is discussed whether it is possible to work around these obstacles by using floating-gate transistors (FGTs), and analyze problems associated with the practical implementation. FGT technology is attractive because it is electrically programmable and also features a charge-based built-in non-volatile memory. Apart from being ideal for canceling the circuit non-idealities due to process variations, the FGTs can also be used as computational or adaptive elements in analog circuits. The nominal gate oxide thickness in the deep sub-micron (DSM) processes is too thin to support robust charge retention and consequently the FGT becomes leaky. In principle, non-leaky FGTs can be implemented in a scaled down process without any special masks by using “double”-oxide transistors intended for providing devices that operate with higher supply voltages than general purpose devices. However, in practice the technology scaling poses several challenges which are addressed in this thesis. To provide a sufficiently wide-ranging survey, six prototype chips with varying complexity were implemented in four different DSM process nodes and investigated from this perspective. The focus is on non-leaky FGTs, but the presented autozeroing floating-gate amplifier (AFGA) demonstrates that leaky FGTs may also find a use. The simplest test structures contain only a few transistors, whereas the most complex experimental chip is an implementation of a spiking neural network (SNN) which comprises thousands of active and passive devices. More precisely, it is a fully connected (256 FGT synapses) two-layer spiking neural network (SNN), where the adaptive properties of FGT are taken advantage of. A compact realization of Spike Timing Dependent Plasticity (STDP) within the SNN is one of the key contributions of this thesis. Finally, the considerations in this thesis extend beyond CMOS to emerging nanodevices. To this end, one promising emerging nanoscale circuit element - memristor - is reviewed and its applicability for analog processing is considered. Furthermore, it is discussed how the FGT technology can be used to prototype computation paradigms compatible with these emerging two-terminal nanoscale devices in a mature and widely available CMOS technology.Siirretty Doriast
    corecore