Imperfection-Aware Design of CNFET Digital VLSI Circuits

Carbon nanotube field-effect transistor (CNFET) is one of the promising candidates as extensions to silicon CMOS devices. The CNFET, which is a 1-D structure with a near-ballistic transport capability, can potentially offer excellent device characteristics and order-of-magnitude better energy-delay product over standard CMOS devices. Significant challenges in CNT synthesis prevent CNFETs today from achieving such ideal benefits. CNT density variation and metallic CNTs are the dominant type of CNT variations/imperfections that cause performance variation, large static power consumption, and yield degradation. We present an imperfection-aware design technique for CNFET digital VLSI circuits by: 1) Analytical models that are developed to analyze and quantify the effects of CNT density variation on device characteristics, gate and system levels delays. The analytical models, which were validated by comparison to real experimental/simulation data, enables us to examine the space of CNFET combinational, sequential and memory cells circuits to minimize delay variations. Using these model, we drive CNFET processing and circuit design guidelines to manage/overcome CNT density variation. 2) Analytical models that are developed to analyze the effects of metallic CNTs on device characteristics, gate and system levels delay and power consumption. Using our presented analytical models, which are again validated by comparison with simulation data, it is shown that the static power dissipation is a more critical issue than the delay and the dynamic power of CNFET circuits in the presence of m-CNTs. 3) CNT density variation and metallic CNTs can result in functional failure of CNFET circuits. The complete and compact model for CNFET probability of failure that consider CNT density variation and m-CNTs is presented. This analytical model is applied to analyze the logical functional failures. The presented model is extended to predict opportunities and limitations of CNFET technology at todays Gigascale integration and beyond.\u2

Static noise margin analysis for CMOS logic cells in near-threshold

The advancement of semiconductor technology enabled the fabrication of devices with faster switching activity and chips with higher integration density. However, these advances are facing new impediments related to energy and power dissipation. Besides, the increasing demand for portable devices leads the circuit design paradigm to prioritize energy efficiency instead of performance. Altogether, this scenario motivates engineers towards reducing the supply voltage to the near and subthreshold regime to increase the lifespan of battery-powered devices. Even though operating in these regime offer interesting energy-frequency trade-offs, it brings challenges concerning noise tolerance. As the supply voltage reduces, the available noise margins decrease, and circuits become more prone to functional failures. In addition, near and subthreshold circuits are more susceptible to manufacturing variability, hence further aggravating noise issues. Other issues, such as wire minimization and gate fan-out, also contribute to the relevance of evaluating the noise margin of circuits early in the design Accordingly, this work investigates how to improve the static noise margin of digital synchronous circuits that will operate at the near/subthreshold regime. This investigation produces a set of three original contributions. The first is an automated tool to estimate the static noise margin of CMOS combinational cells. The second contribution is a realistic static noise margin estimation methodology that considers process-voltage-temperature variations. Results show that the proposed methodology allows to reduce up to 70% of the static noise margin pessimism. Finally, the third contribution is the noise-aware cell design methodology and the inclusion of a noise evaluation of complex circuits during the logic synthesis. The resulting library achieved higher static noise margin (up to 24%) and less spread among different cells (up to 62%).Os avanços na tecnologia de semicondutores possibilitou que se fabricasse dispositivos com atividade de chaveamento mais rápida e com maior capacidade de integração de transistores. Estes avanços, todavia, impuseram novos empecilhos relacionados com a dissipação de potência e energia. Além disso, a crescente demanda por dispositivos portáteis levaram à uma mudança no paradigma de projeto de circuitos para que se priorize energia ao invés de desempenho. Este cenário motivou à reduzir a tensão de alimentação com qual os dispositivos operam para um regime próximo ou abaixo da tensão de limiar, com o objetivo de aumentar sua duração de bateria. Apesar desta abordagem balancear características de performance e energia, ela traz novos desafios com relação a tolerância à ruído. Ao reduzirmos a tensão de alimentação, também reduz-se a margem de ruído disponível e, assim, os circuitos tornam-se mais suscetíveis à falhas funcionais. Somado à este efeito, circuitos com tensões de alimentação nestes regimes são mais sensíveis à variações do processo de fabricação, logo agravando problemas com ruído. Existem também outros aspectos, tais como a miniaturização das interconexões e a relação de fan-out de uma célula digital, que incentivam a avaliação de ruído nas fases iniciais do projeto de circuitos integrados Por estes motivos, este trabalho investiga como aprimorar a margem de ruído estática de circuitos síncronos digitais que irão operar em tensões no regime de tensão próximo ou abaixo do limiar. Esta investigação produz um conjunto de três contribuições originais. A primeira é uma ferramenta capaz de avaliar automaticamente a margem de ruído estática de células CMOS combinacionais. A segunda contribuição é uma metodologia realista para estimar a margem de ruído estática considerando variações de processo, tensão e temperatura. Os resultados obtidos mostram que a metodologia proposta permitiu reduzir até 70% do pessimismo das margens de ruído estática, Por último, a terceira contribuição é um fluxo de projeto de células combinacionais digitais considerando ruído, e uma abordagem para avaliar a margem de ruído estática de circuitos complexos durante a etapa de síntese lógica. A biblioteca de células resultante deste fluxo obteve maior margem de ruído (até 24%) e menor variação entre diferentes células (até 62%)

Analysis of High-Performance Near-threshold Dual Mode Logic design

A novel dual mode logic (DML) model has a superior energy-performance compare to CMOS logic. The DML model has unique feature that allows switching between both modes of operation as per the real-time system requirements. The DML functions in two dissimilar modes (static and dynamic) of operation with its specific features, to selectively obtain either low-energy or high-performance. The sub-threshold region DML achieves minimum-energy. However, sub-threshold region consequence in performance is enormous. In this paper, the working of DML model in the moderate inversion region has been explored. The near-threshold region holds much of the energy saving of sub-threshold designs, along with improved performance. Furthermore, robustness to supply voltage and sensitivity to the process temperature variations are presented. Monte carol analysis shows that the projected near-threshold region has minimum energy along with the moderate performance

Quantifying Near-Threshold CMOS Circuit Robustness

In order to build energy efficient digital CMOS circuits, the supply voltage must be reduced to near-threshold. Problematically, due to random parameter variation, supply scaling reduces circuit robustness to noise. Moreover, the effects of parameter variation worsen as device dimensions diminish, further reducing robustness, and making parameter variation one of the most significant hurdles to continued CMOS scaling. This paper presents a new metric to quantify circuit robustness with respect to variation and noise along with an efficient method of calculation. The method relies on the statistical analysis of standard cells and memories resulting an an extremely compact representation of robustness data. With this metric and method of calculation, circuit robustness can be included alongside energy, delay, and area during circuit design and optimization

Analysis of the subthreshold CMOS logic inverter

AbstractThere is no doubt that operating the MOSFET transistor in the subthreshold region, where the power-supply voltage is less than the threshold voltage, has an increasing importance due to the reduced power consumption. In this paper, the analysis of the CMOS logic inverter in the subthreshold region is addressed quantitatively with the static and dynamic characteristics investigated and compared with that operating in the superthreshold region. Specifically, compact-form equations are derived for the output-low voltage, output-high voltage, maximum-input voltage at logic “0,” minimum-input voltage at logic “1,” and threshold voltage of the inverter. Also, the static-power consumption and dynamic-power consumption are investigated and equations are derived for them. Compact-form expressions are derived for the low-to-high and the high-to-low propagation delays along with the fan-out. Qualitative discussions are also provided. The results of the quantitative analysis are verified by comparison with the simulation results adopting the 65nm CMOS technology

Architecting NP-Dynamic Skybridge

With the scaling of technology nodes, modern CMOS integrated circuits face severe fundamental challenges that stem from device scaling limitations, interconnection bottlenecks and increasing manufacturing complexities. These challenges drive researchers to look for revolutionary technologies beyond the end of CMOS roadmap. Towards this end, a new nanoscale 3-D computing fabric for future integrated circuits, Skybridge, has been proposed [1]. In this new fabric, core aspects from device to circuit style, connectivity, thermal management and manufacturing pathway are co-architected in a 3-D fabric-centric manner. However, the Skybridge fabric uses only n-type transistors in a dynamic circuit style for logic and memory implementations. Therefore, it requires complicated clocking schemes to overcome signal monotonicity associated with cascading dynamic logic gates. For Skybridge’s large-scale circuits, the dynamic circuit style requires cascaded stages to be micro-pipelined, which results in large number of buffers used for storing minterms causing significant overhead in terms of area and power. Moreover, implementation of logic is limited to NAND or AND-of-NAND based logic expressions, which does not always result in compact circuits. In this work, we propose an extension of original Skybridge fabric, called NP-Dynamic-Skybridge, to solve these challenges by using both n-and p-type transistors in an innovative circuit style. Here, every stage in a given circuit is implemented by either n-type or p-type dynamic logic. Cascading n- and p-type dynamic logic effectively avoids signal monotonicity problem, and allows combinational-like circuit implementation. This helps to simplify the clocking scheme for cascaded logics requiring only one set of global precharge and evaluate clock signals. And also it expands the degree of expressing logic enabling expressions such as NOR, OR-of-NORs, in addition to those previously mentioned. Furthermore, the number of pipeline stages is significantly reduced for a given logic function, and buffer requirements are less compared with Skybridge 3D fabric thus improving on area and power metrics. Initial evaluation for NP-Dynamic-Skybridge’s 4-bit carry look-ahead adder shows up to 2x density benefits over Skybridge 3-D fabric and at least 17% power/throughput benefit

Seven strategies for tolerating highly defective fabrication

In this article we present an architecture that supports fine-grained sparing and resource matching. The base logic structure is a set of interconnected PLAs. The PLAs and their interconnections consist of large arrays of interchangeable nanowires, which serve as programmable product and sum terms and as programmable interconnect links. Each nanowire can have several defective programmable junctions. We can test nanowires for functionality and use only the subset that provides appropriate conductivity and electrical characteristics. We then perform a matching between nanowire junction programmability and application logic needs to use almost all the nanowires even though most of them have defective junctions. We employ seven high-level strategies to achieve this level of defect tolerance

A low-power reconfigurable logic array based on double-gate transistors

A fine-grained reconfigurable architecture based on double gate technology is proposed and analyzed. The logic function operating on the first gate of a double-gate (DG) transistor is reconfigured by altering the charge on its second gate. Each cell in the array can act as logic or interconnect, or both, contrasting with current field-programmable gate array structures in which logic and interconnect are built and configured separately. Simulation results are presented for a fully depleted SOI DG-MOSFET implementation and contrasted with two other proposals from the literature based on directed self-assembly