A Direct Carrier I/Q Modulator for High-Speed Communication at D-Band Using 130 nm SiGe BiCMOS Technology

This paper presents a 110-170 GHz direct conversion I/Q modulator realized in 130 nm SiGe BiCMOS technology with ft/fmax values of 250 GHz/ 370 GHz. The design is based on double-balanced Gilbert mixer cells with on-chip quadrature LO phase shifter and RF balun. In single-sideband operation, the modulator exhibits up to 9.5 dB conversion gain and has measured 3 dB IF bandwidth of 12 GHz. The measured image rejection ratio and LO to RF isolation are as high as 20 dB and 31 dB respectively. Meas-ured input P1dB is -17 dBm at 127 GHz output. The DC power con-sumption is 53 mW. The active chip area is 620 μm× 480 μm in-cluding the RF and LO baluns. The circuit is capable of transmit-ting more than 12 Gbit/s QPSK signal

System-level design and RF front-end implementation for a 3-10ghz multiband-ofdm ultrawideband receiver and built-in testing techniques for analog and rf integrated circuits

This work consists of two main parts: a) Design of a 3-10GHz UltraWideBand (UWB) Receiver and b) Built-In Testing Techniques (BIT) for Analog and RF circuits. The MultiBand OFDM (MB-OFDM) proposal for UWB communications has received significant attention for the implementation of very high data rate (up to 480Mb/s) wireless devices. A wideband LNA with a tunable notch filter, a downconversion quadrature mixer, and the overall radio system-level design are proposed for an 11-band 3.4-10.3GHz direct conversion receiver for MB-OFDM UWB implemented in a 0.25mm BiCMOS process. The packaged IC includes an RF front-end with interference rejection at 5.25GHz, a frequency synthesizer generating 11 carrier tones in quadrature with fast hopping, and a linear phase baseband section with 42dB of gain programmability. The receiver IC mounted on a FR-4 substrate provides a maximum gain of 67-78dB and NF of 5-10dB across all bands while consuming 114mA from a 2.5V supply. Two BIT techniques for analog and RF circuits are developed. The goal is to reduce the test cost by reducing the use of analog instrumentation. An integrated frequency response characterization system with a digital interface is proposed to test the magnitude and phase responses at different nodes of an analog circuit. A complete prototype in CMOS 0.35mm technology employs only 0.3mm2 of area. Its operation is demonstrated by performing frequency response measurements in a range of 1 to 130MHz on 2 analog filters integrated on the same chip. A very compact CMOS RF RMS Detector and a methodology for its use in the built-in measurement of the gain and 1dB compression point of RF circuits are proposed to address the problem of on-chip testing at RF frequencies. The proposed device generates a DC voltage proportional to the RMS voltage amplitude of an RF signal. A design in CMOS 0.35mm technology presents and input capacitance <15fF and occupies and area of 0.03mm2. The application of these two techniques in combination with a loop-back test architecture significantly enhances the testability of a wireless transceiver system

Integrated Circuit Design for High Data Rate Polymer Microwave Fiber Communication

The rapid development of semiconductor processes with a maximum frequency of oscillation well above 300 GHz enables new applications at frequencies above 100 GHz to be researched and developed. Such applications include wireless backhaul, wireless access, radar and radiometer sensors, wireless energy distribution and harvesting, etc.\ua0For several of these applications, a throughput in data rate well above 10 Gbps, even up to 100 Gbps, is required. Optical fiber communication is the leading option for high data rate and long-range wired communication. However, for shorter ranges like chip-to-chip or module-to-module (up to ten meters), millimeter-wave communication over a polymer microwave fiber (PMF) is an interesting alternative due to its potential low cost. Other advantages include flexibility, less sensitivity to temperature variations, and a more relaxed mechanical tolerance requirement. Similar to optical fiber, dispersion occurs on PMFs and will cause symbol interference. Different ways to deal with this effect are investigated, for example, pulse shaping and equalization of the signal.\ua0This work proposes and presents various circuit solutions enabling high data rate communication. Two technologies are used, 250 nm InP DHBT and 130 nm SiGe BiCMOS. An energy-efficient solution using an RF-DAC and power detector for pulse amplitude modulated links are evaluated, as well as an I/Q modulated solution. I/Q (de-)modulators require more complexity, but the increased spectral efficiency can also increase the data rate further.\ua0\ua0In summary, I explore the opportunities and challenges of short-range, ultra-high data rate, PMF bound communication, which is found to support 56 Gbps error-free (BER&lt;10-12) data and 102 Gbps with a BER=2.1*10-3

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance

Millimeter-wave Communication and Radar Sensing — Opportunities, Challenges, and Solutions

With the development of communication and radar sensing technology, people are able to seek for a more convenient life and better experiences. The fifth generation (5G) mobile network provides high speed communication and internet services with a data rate up to several gigabit per second (Gbps). In addition, 5G offers great opportunities of emerging applications, for example, manufacture automation with the help of precise wireless sensing. For future communication and sensing systems, increasing capacity and accuracy is desired, which can be realized at millimeter-wave spectrum from 30 GHz to 300 GHz with several tens of GHz available bandwidth. Wavelength reduces at higher frequency, this implies more compact transceivers and antennas, and high sensing accuracy and imaging resolution. Challenges arise with these application opportunities when it comes to realizing prototype or demonstrators in practice. This thesis proposes some of the solutions addressing such challenges in a laboratory environment.High data rate millimeter-wave transmission experiments have been demonstrated with the help of advanced instrumentations. These demonstrations show the potential of transceiver chipsets. On the other hand, the real-time communication demonstrations are limited to either low modulation order signals or low symbol rate transmissions. The reason for that is the lack of commercially available high-speed analog-to-digital converters (ADCs); therefore, conventional digital synchronization methods are difficult to implement in real-time systems at very high data rates. In this thesis, two synchronous baseband receivers are proposed with carrier recovery subsystems which only require low-speed ADCs [A][B].Besides synchronization, high-frequency signal generation is also a challenge in millimeter-wave communications. The frequency divider is a critical component of a millimeter-wave frequency synthesizer. Having both wide locking range and high working frequencies is a challenge. In this thesis, a tunable delay gated ring oscillator topology is proposed for dual-mode operation and bandwidth extension [C]. Millimeter-wave radar offers advantages for high accuracy sensing. Traditional millimeter-wave radar with frequency-modulated continuous-wave (FMCW), or continuous-wave (CW), all have their disadvantages. Typically, the FMCW radar cannot share the spectrum with other FMCW radars.\ua0 With limited bandwidth, the number of FMCW radars that could coexist in the same area is limited. CW radars have a limited ambiguous distance of a wavelength. In this thesis, a phase-modulated radar with micrometer accuracy is presented [D]. It is applicable in a multi-radar scenario without occupying more bandwidth, and its ambiguous distance is also much larger than the CW radar. Orthogonal frequency-division multiplexing (OFDM) radar has similar properties. However, its traditional fast calculation method, fast Fourier transform (FFT), limits its measurement accuracy. In this thesis, an accuracy enhancement technique is introduced to increase the measurement accuracy up to the micrometer level [E]

Design and implementation of frequency synthesizers for 3-10 ghz mulitband ofdm uwb communication

The allocation of frequency spectrum by the FCC for Ultra Wideband (UWB) communications in the 3.1-10.6 GHz has paved the path for very high data rate Gb/s wireless communications. Frequency synthesis in these communication systems involves great challenges such as high frequency and wideband operation in addition to stringent requirements on frequency hopping time and coexistence with other wireless standards. This research proposes frequency generation schemes for such radio systems and their integrated implementations in silicon based technologies. Special emphasis is placed on efficient frequency planning and other system level considerations for building compact and practical systems for carrier frequency generation in an integrated UWB radio. This work proposes a frequency band plan for multiband OFDM based UWB radios in the 3.1-10.6 GHz range. Based on this frequency plan, two 11-band frequency synthesizers are designed, implemented and tested making them one of the first frequency synthesizers for UWB covering 78% of the licensed spectrum. The circuits are implemented in 0.25µm SiGe BiCMOS and the architectures are based on a single VCO at a fixed frequency followed by an array of dividers, multiplexers and single sideband (SSB) mixers to generate the 11 required bands in quadrature with fast hopping in much less than 9.5 ns. One of the synthesizers is integrated and tested as part of a 3-10 GHz packaged receiver. It draws 80 mA current from a 2.5 V supply and occupies an area of 2.25 mm2. Finally, an architecture for a UWB synthesizer is proposed that is based on a single multiband quadrature VCO, a programmable integer divider with 50% duty cycle and a single sideband mixer. A frequency band plan is proposed that greatly relaxes the tuning range requirement of the multiband VCO and leads to a very digitally intensive architecture for wideband frequency synthesis suitable for implementation in deep submicron CMOS processes. A design in 130nm CMOS occupies less than 1 mm2 while consuming 90 mW. This architecture provides an efficient solution in terms of area and power consumption with very low complexity

Integrated Circuits and Systems for Millimeter-Wave Frequencies

In the first section of this thesis, mm-wave circuit- and system-level solutions for addition of multi-user service to conventional multi-antenna phased array architectures will be introduced. The proposed architecture will enhance the link capacity, co-channel user service and hardware cost compared to conventional solutions. Theory and design of the circuits and system are detailed and comprehensive measurement results are presented verifying the system-level functionality. First section is named A Millimeter-Wave Partially-Overlapped Beamforming-MIMO Receiver: Theory, Design, and Implementation. More specifically, this section presents an analysis and design of a partially-overlapped beamforming-MIMO architecture capable of achieving higher beamforming and spatial multiplexing gains with lower number of elements compared to conventional architectures. As a proof of concept, a 4-element beamforming-MIMO receiver (RX) covering 64-67 GHz frequency band enabling 2-stream concurrent reception is designed and measured. By partitioning the RX elements into two clusters and partially overlapping these clusters to create two 3-element beamformers, both phased-array (coherent beamforming) as well as MIMO (spatial multiplexing) features are simultaneously acquired. 6-bit phase shifters with 360° phase control and 5-bit VGAs with 11 dB range are designed to enable steering of the two RX clusters toward two arbitrary angular locations corresponding to two users. Fabricated in a 130-nm SiGe BiCMOS process, the RX achieves a 30.15 dB maximum direct conversion gain and a 9.8 dB minimum noise figure (NF) across 548 MHz IF bandwidth. S-parameter-based array factor measurements verify spatial filtering of the interference and spatial multiplexing in this RX chip.In the second section of this thesis, energy-efficient ultra-high speed transceiver architectures will be presented. Current high-speed transceivers rely on high-sampling-rate high-resolution power-hungry analog-to-digital converters or digital-to-analog converters at the interface of analog and digital circuitries. However, design of these backend data-converters are extremely power-hungry at very high speeds in a fully-integrated end-to-end scenario (i.e. RF-to-Bits, Bits-to-RF). Novel system-level architectures will be presented that obviate the need for such costly data converters and will significantly relax the complexity of digital signal-processing. The proposed architecture will result in orders of magnitude energy saving at ultra-high speeds. Theory, design, and measurement results of the highest-speed, highly energy-efficient fully-integrated end-to-end transceiver will be discussed in this section. Second section is named A Millimeter-Wave Energy-Efficient Direct-Demodulation Receiver: Theory, Design, and Implementation. More precisely, this section presents the theory, design, and implementation of an 8PSK direct-demodulation receiver based on a novel multi-phase RF-correlation concept. The output of this RF-to-bits receiver architecture is demodulated bits, obviating the need for power-hungry high-speed-resolution data converters. A single-channel 115-135-GHz receiver prototype was fabricated in a 55-nm SiGe BiCMOS process. A max conversion gain of 32 dB and a min noise figure (NF) of 10.3 dB was measured. A data-rate of 36 Gbps was wirelessly measured at 30 cm distance with the received 8PSK signal being directly demodulated on-chip at a bit-error-rate (BER) of 1e-6. The measured receiver sensitivity at this BER is -41.28 dBm. The prototype occupies 2.5 by 3.5 mm squared of die area including PADs and test circuits (2.5 mm squared active area) and consumes a total DC power of 200.25 mW