An ultra low power OTA with improved unity gain bandwidth product

An operational transconductance amplifier (OTA) using dynamic threshold MOS (DTMOS) and hybrid compensation technique is presented in this paper. The proposed topology is based on a bulk and gate driven input differential pair. Two separate capacitors are employed for the OTA compensation where one of them is used in a signal path and the other one in a non-signal path. The circuit is designed in the 0.18μm CMOS TSMC technology. The proposed design technique shows remarkable enhancement in unity gain-bandwidth and also in DC gain compared to the bulk driven input differential pair OTAs. The Hspice simulation results show that the amplifier has a 92dB open-loop DC gain and a unity gain-bandwidth of 135kHz while operating at 0.4V supply voltage. The total power consumption is as low as 386nW which makes it suitable for low-power bio-medical and bio-implantable applications

A 0.3V Rail-to-Rail Three-Stage OTA With High DC Gain and Improved Robustness to PVT Variations

This paper presents a novel 0.3V rail-to-rail body-driven three-stage operational transconductance amplifier (OTA). The proposed OTA architecture allows achieving high DC gain in spite of the bulk-driven input. This is due to the doubled body transconductance at the first and third stages, and to a high gain, gate-driven second stage. The bias current in each branch of the OTA is accurately set through gate-driven or bulk-driven current mirrors, thus guaranteeing an outstanding stability of main OTA performance parameters to PVT variations. In the first stage, the input signals drive the bulk terminals of both NMOS and PMOS transistors in a complementary fashion, allowing a rail-to-rail input common mode range (ICMR). The second stage is a gate-driven, complementary pseudo-differential stage with an high DC gain and a local CMFB. The third stage implements the differential-to-single-ended conversion through a body-driven complementary pseudo-differential pair and a gate-driven current mirror. Thanks to the adoption of two fully differential stages with common mode feedback (CMFB) loop, the common-mode rejection ratio (CMRR) in typical conditions is greatly improved with respect to other ultra-low-voltage (ULV) bulk-driven OTAs. The OTA has been fabricated in a commercial 130nm CMOS process from STMicroelectronics. Its area is about 0.002 mm2 , and power consumption is less than 35nW at the supply-voltage of 0.3V. With a load capacitance of 35pF, the OTA exhibits a DC gain and a unity-gain frequency of about 85dB and 10kHz, respectively

Design of a Comparator and an Amplifier in CMOS using standard logic gates

Using standard logic gates in CMOS, or standard-cells, has the advantage of full synthe- sizability, as well as the voltage scalability between technologies. In this work a general pur- pose standard-cell-based voltage comparator and amplifier are presented. The objective is to design a general purpose standard-cell-based comparator and ampli- fier in 130 nm CMOS by optimizing the already existing topologies with the aim of improving some of the specifications of the studied topologies. Various simulation testbenches were made to test the studied topologies of comparators and amplifiers, in which the results were compared. The top performing standard-cell com- parator and amplifier were then modified. After successfully designing the comparator, it was used in the design of an opamp-less Sigma-Delta modulator (ΣΔM). The proposed comparator is an OR-AND-Inverter-based comparator with dual inputs and outputs, achieving a delay of 109 ps, static input offset of 591 μV, and random offset of 10.42 μV, while dissipating 890 μW, when clocked at 1.5 GHz. The proposed amplifier is a single-path three-stage inverter-based operational transcon- ductance amplifier (OTA) with active common-mode feedback loop, achieving a DC gain of 63 dB, 1444 MHz of unity-gain bandwidth, 51º of phase margin while dissipating 1098 μW, considering a load of 1 pF. The proposed comparator was employed in the ΣΔM with a standard-cell based edge- triggered flip-flop. The ΣΔM, with a sampling frequency of 2 MHz and a signal bandwidth of 2.5 kHz, achieved a peak SNDR of 69 dB while dissipating only 136.7 μW.Utilizando portas lógicas básicas em CMOS oferece a vantagem de um circuito comple- tamente sintetizável, tal como o escalamento de tensão entre tecnologias. Neste trabalho são apresentados um comparador de tensão e um amplificador utilizando portas lógicas. O objetivo deste trabalho é desenhar um comparador e um amplificador utilizando por- tas lógicas através do estudo e otimização de topologias já existentes com a finalidade de me- lhoramento de algumas das especificações das mesmas. Foram realizados vários bancos de teste para testar as topologias estudadas de compa- radores e amplificadores, em que os resultados foram comparados. As topologias de compa- radores e amplificadores de portas lógicas com melhor performance foram então modificadas. Após o comparador ter sido projetado com sucesso, foi utilizado na projeção de um modula- dor Sigma-Delta (ΣΔM) opamp-less. O comparador proposto é um OR-AND-Inversor com duas entradas e saídas, que apre- senta um atraso de 109 ps, offset estático na entrada de 591 μV, offset aleatório de 10.42 μV, enquanto dissipando 890 μW, utilizando uma frequência de relógio de 1.5 GHz O amplificador proposto é um amplificador operacional de transcondutância single- path three-stage inverter-based com um loop ativo de realimentação do modo-comum, que apresenta um ganho DC de 63 dB, 1444 MHz de ganho-unitário de largura de banda, 51º de margem de fase e dissipando 1098 μW, considerando uma carga de 1 pF. O comparador proposto foi aplicado no ΣΔM com um flip-flop edge-triggered baseado em portas lógicas. O ΣΔM, com uma frequência de amostragem de 2 MHz e uma largura de banda de 2.5 kHz, apresentou um SNDR máximo de 69 dB enquanto dissipando apenas 136.7 μW

An ultra-low-voltage class-AB OTA exploiting local CMFB and body-to-gate interface

In this work a novel bulk-driven (BD) ultra-low-voltage (ULV) class-AB operational transconductance amplifier (OTA) which exploits local common mode feedback (LCMFB) strategies to enhance performance and robustness against process, voltage and temperature (PVT) variations has been proposed. The amplifier exploits body-to-gate (B2G) interface to increase the slew rate and attain class-AB behaviour, whereas two pseudo-resistors have been employed to increase the common mode rejection ratio (CMRR). The architecture has been extensively tested through Monte Carlo and PVT simulations, results show that the amplifier is very robust in terms of gain-bandwidth-product (GBW), power consumption and slew rate. A wide comparison against state-of-the-art has pointed out that best small-signal figures of merit are attained and good large-signal performance is guaranteed, also when worst-case slew rate is considered

An improved reversed miller compensation technique for three-stage CMOS OTAs with double pole-zero cancellation and almost single-pole frequency response

This paper presents an improved reversed nested Miller compensation technique exploiting a single additional feed-forward stage to obtain double pole-zero cancellation and ideally single-pole behavior, in a three-stage Miller amplifier. The approach allows designing a three-stage operational transconductance amplifier (OTA) with one dominant pole and two (ideally) mutually cancelling pole-zero doublets. We demonstrate the robustness of the proposed cancellation technique, showing that it is not significantly influenced by process and temperature variations. The proposed design equations allow setting the unity-gain frequency of the amplifier and the complex poles' resonance frequency and quality factor. We introduce the notion of bandwidth efficiency to quantify the OTA performance with respect to a telescopic cascode OTA for given load capacitance and power consumption constraints and demonstrate analytically that the proposed approach allows a bandwidth efficiency that can ideally approach 100%. A CMOS implementation of the proposed compensation technique is provided, in which a current reuse scheme is used to reduce the total current consumption. The OTA has been designed using a 130-nm CMOS process by STMicroelectronics and achieves a DC gain larger than 120 dB, with almost single-pole frequency response. Monte Carlo simulations have been performed to show the robustness of the proposed approach to process, voltage, and temperature (PVT) variations and mismatches

Performance enhancement in the desing of amplifier and amplifier-less circuits in modern CMOS technologies.

In the context of nowadays CMOS technology downscaling and the increasing demand of high performance electronics by industry and consumers, analog design has become a major challenge. On the one hand, beyond others, amplifiers have traditionally been a key cell for many analog systems whose overall performance strongly depends on those of the amplifier. Consequently, still today, achieving high performance amplifiers is essential. On the other hand, due to the increasing difficulty in achieving high performance amplifiers in downscaled modern technologies, a different research line that replaces the amplifier by other more easily achievable cells appears: the so called amplifier-less techniques. This thesis explores and contributes to both philosophies. Specifically, a lowvoltage differential input pair is proposed, with which three multistage amplifiers in the state of art are designed, analysed and tested. Moreover, a structure for the implementation of differential switched capacitor circuits, specially suitable for comparator-based circuits, that features lower distortion and less noise than the classical differential structures is proposed, an, as a proof of concept, implemented in a ΔΣ modulator

A novel Digital OTA topology with 66-dB DC Gain and 12.3-kHz Bandwidth

The paper introduces an enhanced digital OTA topology which allows increasing the DC gain thanks to the adoption of an inverter-based output stage. Moreover, a new equivalent small-signal model is proposed which allows to simplify the circuit analysis and paves the way to new frequency compensation strategies. Designed using a 28-nm standard CMOS technology and working at 0.3-V power supply, post-layout simulations show a 66-dB gain and a 12.3-kHz gain bandwidth product while driving a 250-pF capacitive load. As compared to other ultra-low-voltage OTAs in literature, an increase of small and large signal performance, respect to area occupation, equal to 4.6X and 1.5X, respectively, is obtained