Modelling and analysis of crosstalk in scaled CMOS interconnects

The development of a general coupled RLC interconnect model for simulating scaled bus structures m VLSI is presented. Several different methods for extracting submicron resistance, inductance and capacitance parameters are documented. Realistic scaling dimensions for deep submicron design rules are derived and used within the model. Deep submicron HSPICE device models are derived through the use of constant-voltage scaling theory on existing 0.75µm and 1.0µm models to create accurate interconnect bus drivers. This complete model is then used to analyse crosstalk noise and delay effects on multiple scaling levels to determine the dependence of crosstalk on scaling level. Using this data, layout techniques and processing methods are suggested to reduce crosstalk in system

Full-wave analysis of large conductor systems over substrate

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006.Includes bibliographical references (leaves 137-145).Designers of high-performance integrated circuits are paying ever-increasing attention to minimizing problems associated with interconnects such as noise, signal delay, crosstalk, etc., many of which are caused by the presence of a conductive substrate. The severity of these problems increases as integrated circuit clock frequencies rise into the multiple gigahertz range. In this thesis, a simulation tool is presented for the extraction of full-wave interconnect impedances in the presence of a conducting substrate. The substrate effects are accounted for through the use of full-wave layered Green's functions in a mixed-potential integral equation (MPIE) formulation. Particularly, the choice of implementation for the layered Green's function kernels motivates the development of accelerated techniques for both their 3D volume and 2D surface integrations, where each integration type can be reduced to a sum of D line integrals. In addition, a set of high-order, frequency-independent basis functions is developed with the ability to parameterize the frequency-dependent nature of the solution space, hence reducing the number of unknowns required to capture the interconnects' frequency-variant behavior.(cont.) Moreover, a pre-corrected FFT acceleration technique, conventional for the treatment of scalar Green's function kernels, is extended in the solver to accommodate the dyadic Green's function kernels encountered in the substrate modeling problem. Overall, the integral-equation solver, combined with its numerous acceleration techniques, serves as a viable solution to full-wave substrate impedance extractions of large and complex interconnect structures.by Xin Hu.Ph.D

SIGNAL PROCESSING TECHNIQUES AND APPLICATIONS

As the technologies scaling down, more transistors can be fabricated into the same area, which enables the integration of many components into the same substrate, referred to as system-on-chip (SoC). The components on SoC are connected by on-chip global interconnects. It has been shown in the recent International Technology Roadmap of Semiconductors (ITRS) that when scaling down, gate delay decreases, but global interconnect delay increases due to crosstalk. The interconnect delay has become a bottleneck of the overall system performance. Many techniques have been proposed to address crosstalk, such as shielding, buffer insertion, and crosstalk avoidance codes (CACs). The CAC is a promising technique due to its good crosstalk reduction, less power consumption and lower area. In this dissertation, I will present analytical delay models for on-chip interconnects with improved accuracy. This enables us to have a more accurate control of delays for transition patterns and lead to a more efficient CAC, whose worst-case delay is 30-40% smaller than the best of previously proposed CACs. As the clock frequency approaches multi-gigahertz, the parasitic inductance of on-chip interconnects has become significant and its detrimental effects, including increased delay, voltage overshoots and undershoots, and increased crosstalk noise, cannot be ignored. We introduce new CACs to address both capacitive and inductive couplings simultaneously.Quantum computers are more powerful in solving some NP problems than the classical computers. However, quantum computers suffer greatly from unwanted interactions with environment. Quantum error correction codes (QECCs) are needed to protect quantum information against noise and decoherence. Given their good error-correcting performance, it is desirable to adapt existing iterative decoding algorithms of LDPC codes to obtain LDPC-based QECCs. Several QECCs based on nonbinary LDPC codes have been proposed with a much better error-correcting performance than existing quantum codes over a qubit channel. In this dissertation, I will present stabilizer codes based on nonbinary QC-LDPC codes for qubit channels. The results will confirm the observation that QECCs based on nonbinary LDPC codes appear to achieve better performance than QECCs based on binary LDPC codes.As the technologies scaling down further to nanoscale, CMOS devices suffer greatly from the quantum mechanical effects. Some emerging nano devices, such as resonant tunneling diodes (RTDs), quantum cellular automata (QCA), and single electron transistors (SETs), have no such issues and are promising candidates to replace the traditional CMOS devices. Threshold gate, which can implement complex Boolean functions within a single gate, can be easily realized with these devices. Several applications dealing with real-valued signals have already been realized using nanotechnology based threshold gates. Unfortunately, the applications using finite fields, such as error correcting coding and cryptography, have not been realized using nanotechnology. The main obstacle is that they require a great number of exclusive-ORs (XORs), which cannot be realized in a single threshold gate. Besides, the fan-in of a threshold gate in RTD nanotechnology needs to be bounded for both reliability and performance purpose. In this dissertation, I will present a majority-class threshold architecture of XORs with bounded fan-in, and compare it with a Boolean-class architecture. I will show an application of the proposed XORs for the finite field multiplications. The analysis results will show that the majority class outperforms the Boolean class architectures in terms of hardware complexity and latency. I will also introduce a sort-and-search algorithm, which can be used for implementations of any symmetric functions. Since XOR is a special symmetric function, it can be implemented via the sort-and-search algorithm. To leverage the power of multi-input threshold functions, I generalize the previously proposed sort-and-search algorithm from a fan-in of two to arbitrary fan-ins, and propose an architecture of multi-input XORs with bounded fan-ins

Field theoretic analysis of a class of planar microwave and opto-electronic structures

With increasing operating frequencies in CMOS RF/microwave integrated circuits, the performance of on-chip interconnects is becoming significantly affected by the lossy substrate. It is the purpose of the first part of this thesis to develop a rigorous field theoretic analysis approach for efficient characterization of single and multiple coupled interconnects on silicon substrate, which is applicable over a wide range of substrate resistivities. The frequency-dependent transmission line parameters of a microstrip on silicon are determined by a new formulation based on a quasi-electrostatic and quasi-magnetostatic spectral domain approach. It is demonstrated that this new quasi-static formulation provides the complete frequency-dependent interconnect characteristics for all three major transmission line modes of operation. In particular, it is shown that in the case of heavily doped CMOS substrates, the distributed series inductance and series resistance parameters are significantly affected by the presence of longitudinal substrate currents giving rise to the substrate skin-effect. The method is further extended to multiple coupled single and multi-level interconnect structures with ground plane and multiple coupled co-planar stripline structures without ground plane. The finite conductor thickness is taken into account in terms of a stacked conductor model. The new quasi-static approach is validated by comparison with results obtained with a full-wave spectral domain method and the commercial planar full-wave electromagnetic field solver HP/Momentum®, as well as published simulation and measurement data. In the second part of this thesis, coupled planar optical interconnect structures are investigated based on a rigorous field theoretic analysis combined with an application of the normal mode theory for coupled transmission lines. A new transfer matrix description for a general optical directional coupler is presented. Based on this transfer matrix formulation, the wavelength-dependent characteristics of multi-section optical filters consisting of cascaded asymmetric optical directional coupler sections are investigated. It is shown that by varying the asymmetry factors of the cascaded coupled waveguide sections, optical wavelength filters with different passband properties can be achieved

Statistical circuit simulations - from ‘atomistic’ compact models to statistical standard cell characterisation

This thesis describes the development and application of statistical circuit simulation methodologies to analyse digital circuits subject to intrinsic parameter fluctuations. The specific nature of intrinsic parameter fluctuations are discussed, and we explain the crucial importance to the semiconductor industry of developing design tools which accurately account for their effects. Current work in the area is reviewed, and three important factors are made clear: any statistical circuit simulation methodology must be based on physically correct, predictive models of device variability; the statistical compact models describing device operation must be characterised for accurate transient analysis of circuits; analysis must be carried out on realistic circuit components. Improving on previous efforts in the field, we posit a statistical circuit simulation methodology which accounts for all three of these factors. The established 3-D Glasgow atomistic simulator is employed to predict electrical characteristics for devices aimed at digital circuit applications, with gate lengths from 35 nm to 13 nm. Using these electrical characteristics, extraction of BSIM4 compact models is carried out and their accuracy in performing transient analysis using SPICE is validated against well characterised mixed-mode TCAD simulation results for 35 nm devices. Static d.c. simulations are performed to test the methodology, and a useful analytic model to predict hard logic fault limitations on CMOS supply voltage scaling is derived as part of this work. Using our toolset, the effect of statistical variability introduced by random discrete dopants on the dynamic behaviour of inverters is studied in detail. As devices scaled, dynamic noise margin variation of an inverter is increased and higher output load or input slew rate improves the noise margins and its variation. Intrinsic delay variation based on CV/I delay metric is also compared using ION and IEFF definitions where the best estimate is obtained when considering ION and input transition time variations. Critical delay distribution of a path is also investigated where it is shown non-Gaussian. Finally, the impact of the cell input slew rate definition on the accuracy of the inverter cell timing characterisation in NLDM format is investigated

Analysis, synthesis, and fabrication of VLSI Si detector arrays for optoelectronic interconnections

Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.Includes bibliographical references (p. 141-145).by Edward Joseph Ouellette, III.M.S

Advanced modelling and design considerations for interconnects in ultra- low power digital system

PhD ThesisAs Very Large Scale Integration (VLSI) is progressing in very Deep submicron (DSM) regime without decreasing chip area, the importance of global interconnects increases but at the cost of performance and power consumption for advanced System-on- Chip (SoC)s. However, the growing complexity of interconnects behaviour presents a challenge for their adequate modelling, whereby conventional circuit theoretic approaches cannot provide sufficient accuracy. During the last decades, fractional differential calculus has been successfully applied to modelling certain classes of dynamical systems while keeping complexity of the models under acceptable bounds. For example, fractional calculus can help capturing inherent physical effects in electrical networks in a compact form, without following conventional assumptions about linearization of non-linear interconnect components. This thesis tackles the problem of interconnect modelling in its generality to simulate a wide range of interconnection configurations, its capacity to emulate irregular circuit elements and its simplicity in the form of responsible approximation. This includes modelling and analysing interconnections considering their irregular components to add more flexibility and freedom for design. The aim is to achieve the simplest adaptable model with the highest possible accuracy. Thus, the proposed model can be used for fast computer simulation of interconnection behaviour. In addition, this thesis proposes a low power circuit for driving a global interconnect at voltages close to the noise level. As a result, the proposed circuit demonstrates a promising solution to address the energy and performance issues related to scaling effects on interconnects along with soft errors that can be caused by neutron particles. The major contributions of this thesis are twofold. Firstly, in order to address Ultra-Low Power (ULP) design limitations, a novel driver scheme has been configured. This scheme uses a bootstrap circuitry which boosts the driver’s ability to drive a long interconnect with an important feedback feature in it. Hence, this approach achieves two objectives: improving performance and mitigating power consumption. Those achievements are essential in designing ULP circuits along with occupying a smaller footprint and being immune to noise, observed in this design as well. These have been verified by comparing the proposed design to the previous and traditional circuits using a simulation tool. Additionally, the boosting based approach has been shown beneficial in mitigating the effects of single event upset (SEU)s, which are known to affect DSM circuits working under low voltages. Secondly, the CMOS circuit driving a distributed RLC load has been brought in its analysis into the fractional order domain. This model will make the on-chip interconnect structure easy to adjust by including the effect of fractional orders on the interconnect timing, which has not been considered before. A second-order model for the transfer functions of the proposed general structure is derived, keeping the complexity associated with second-order models for this class of circuits at a minimum. The approach here attaches an important trait of robustness to the circuit design procedure; namely, by simply adjusting the fractional order we can avoid modifying the circuit components. This can also be used to optimise the estimation of the system’s delay for a broad range of frequencies, particularly at the beginning of the design flow, when computational speed is of paramount importance.Iraqi Ministry of Higher Education and Scientific Researc