4,731 research outputs found

    A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C

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    An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2

    A review of advances in pixel detectors for experiments with high rate and radiation

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    The Large Hadron Collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog. Phy

    Low Power and Small Area Mixed-Signal Circuits:ADCs, Temperature Sensors and Digital Interfaces

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    A 6.0-mW 10.0-Gb/s Receiver With Switched-Capacitor Summation DFE

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    A low-power receiver with a one-tap decision feedback equalization (DFE) was fabricated in 90-nm CMOS technology. The speculative equalization is performed using switched-capacitor-based addition at the front-end sample-hold circuit. In order to further reduce the power consumption, an analog multiplexer is used in the speculation technique implementation. A quarter-rate-clocking scheme facilitates the use of low-power front-end circuitry and CMOS clock buffers. The receiver was tested over channels with different levels of ISI. The signaling rate with BER<10^-12 was significantly increased with the use of DFE for short- to medium-distance PCB traces. At 10-Gb/s data rate, the receiver consumes less than 6.0 mW from a 1.0-V supply. This includes the power consumed in all quarter-rate clock buffers, but not the power of a clock recovery loop. The input clock phase and the DFE taps are adjusted externally

    Technical Design Report for the PANDA Micro Vertex Detector

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    This document illustrates the technical layout and the expected performance of the Micro Vertex Detector (MVD) of the PANDA experiment. The MVD will detect charged particles as close as possible to the interaction zone. Design criteria and the optimisation process as well as the technical solutions chosen are discussed and the results of this process are subjected to extensive Monte Carlo physics studies. The route towards realisation of the detector is outlined

    The Deformable Mirror Demonstration Mission (DeMi) CubeSat: optomechanical design validation and laboratory calibration

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    Coronagraphs on future space telescopes will require precise wavefront correction to detect Earth-like exoplanets near their host stars. High-actuator count microelectromechanical system (MEMS) deformable mirrors provide wavefront control with low size, weight, and power. The Deformable Mirror Demonstration Mission (DeMi) payload will demonstrate a 140 actuator MEMS deformable mirror (DM) with \SI{5.5}{\micro\meter} maximum stroke. We present the flight optomechanical design, lab tests of the flight wavefront sensor and wavefront reconstructor, and simulations of closed-loop control of wavefront aberrations. We also present the compact flight DM controller, capable of driving up to 192 actuator channels at 0-250V with 14-bit resolution. Two embedded Raspberry Pi 3 compute modules are used for task management and wavefront reconstruction. The spacecraft is a 6U CubeSat (30 cm x 20 cm x 10 cm) and launch is planned for 2019.Comment: 15 pages, 10 figues. Presented at SPIE Astronomical Telescopes + Instrumentation, Austin, Texas, US

    Electronic systems for intelligent particle tracking in the High Energy Physics field

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    This Ph.D thesis describes the development of a novel readout ASIC for hybrid pixel detector with intelligent particle tracking capabilities in High Energy Physics (HEP) application, called Macro Pixel ASIC (MPA). The concept of intelligent tracking is introduced for the upgrade of the particle tracking system of the Compact Muon Solenoid (CMS) experiment of the Large Hadron Collider (LHC) at CERN: this detector must be capable of selecting at front--end level the interesting particle and of providing them continuously to the back-end. This new functionality is required to cope with the improved performances of the LHC when, in about ten years' time, a major upgrade will lead to the High Luminosity scenario (HL-LHC). The high complexity of the digital logic for particle selection and the very low power requirement of 95% in particle selection and a data reduction from 200 Tb/s/cm2 to 1 Tb/s/cm2. A prototype, called MPA-Light, has been designed, produced and tested. According to the measurements, the prototype respects all the specications. The same device has been used for multi-chip assembly with a pixelated sensor. The assembly characterization with radioactive sources conrms the result obtained on the bare chip

    A 2.98pJ/conversion 0.0023mm2 Dynamic Temperature Sensor with Fully On-Chip Corrections

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    Nowadays, many battery-operated SoCs for loT and environmental monitoring applications are equipped with temperature sensors. In these miniaturized systems, power and area are two critical concerns. One challenge for temperature sensors is that they are sensitive to process corners and random mismatch. Generally, a 2-point trim and systematic non-linear error removal are required, especially for resistor-based sensing front-ends with two types of resistors, whose spread is partially uncorrelated [1], [2]. These corrections are done off-chip and digitally in most publications. In particular for low power sensors, they may consume more power and area than the sensor itself when integrated on-chip [3]. This work presents a resistive temperature sensor that integrates on-chip analog offset, gain and non-linearity correction techniques, while keeping state-of-the-art power and size performance. The prototype consumes 2.98pJ/conversion with an area of 0. 0023textmm 2 including all the correction techniques and achieves +0.7/-0.6 circC inaccuracy.</p
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