Estimation of real traffic radiated emissions from electric vehicles in terms of the driving profile using neural networks

The increment of the use of electric vehicles leads to a worry about measuring its principal source of environmental pollution: electromagnetic emissions. Given the complexity of directly measuring vehicular radiated emissions in real traffic, the main contribution of this PhD thesis is to propose an indirect solution to estimate such type of vehicular emissions. Relating the on-road vehicular radiated emissions with the driving profile is a complicated task. This is because it is not possible to directly measure the vehicular radiated interferences in real traffic due to potential interferences from another electromagnetic wave sources. This thesis presents a microscopic artificial intelligence model based on neural networks to estimate real traffic radiated emissions of electric vehicles in terms of the driving dynamics. Instantaneous values of measured speed and calculated acceleration have been used to characterize the driving profile. Experimental electromagnetic interference tests have been carried out with a Vectrix electric motorcycle as well as Twizy electric cars in semi-anechoic chambers. Both the motorcycle and the car have been subjected to different urban and interurban driving profiles. Time Domain measurement methodology of electromagnetic radiated emissions has been adopted in this work to save the overall measurement time. The relationship between the magnetic radiated emissions of the Twizy and the corresponding speed has been very noticeable. Maximum magnetic field levels have been observed during high speed cruising in extra-urban driving and acceleration in urban environments. A comparative study of the prediction performance between various static and dynamic neural models has been introduced. The Multilayer Perceptron feedforward neural network trained with Extreme Learning Machines has achieved the best estimation results of magnetic radiated disturbances as function of instantaneous speed and acceleration. In this way, on-road magnetic radiated interferences from an electric vehicle equipped with a Global Positioning System can be estimated. This research line will allow quantify the pollutant electromagnetic emissions of electric vehicles and study new policies to preserve the environment

Estimation of real traffic radiated emissions from electric vehicles in terms of the driving profile using neural networks

The increment of the use of electric vehicles leads to a worry about measuring its principal source of environmental pollution: electromagnetic emissions. Given the complexity of directly measuring vehicular radiated emissions in real traffic, the main contribution of this PhD thesis is to propose an indirect solution to estimate such type of vehicular emissions. Relating the on-road vehicular radiated emissions with the driving profile is a complicated task. This is because it is not possible to directly measure the vehicular radiated interferences in real traffic due to potential interferences from another electromagnetic wave sources. This thesis presents a microscopic artificial intelligence model based on neural networks to estimate real traffic radiated emissions of electric vehicles in terms of the driving dynamics. Instantaneous values of measured speed and calculated acceleration have been used to characterize the driving profile. Experimental electromagnetic interference tests have been carried out with a Vectrix electric motorcycle as well as Twizy electric cars in semi-anechoic chambers. Both the motorcycle and the car have been subjected to different urban and interurban driving profiles. Time Domain measurement methodology of electromagnetic radiated emissions has been adopted in this work to save the overall measurement time. The relationship between the magnetic radiated emissions of the Twizy and the corresponding speed has been very noticeable. Maximum magnetic field levels have been observed during high speed cruising in extra-urban driving and acceleration in urban environments. A comparative study of the prediction performance between various static and dynamic neural models has been introduced. The Multilayer Perceptron feedforward neural network trained with Extreme Learning Machines has achieved the best estimation results of magnetic radiated disturbances as function of instantaneous speed and acceleration. In this way, on-road magnetic radiated interferences from an electric vehicle equipped with a Global Positioning System can be estimated. This research line will allow quantify the pollutant electromagnetic emissions of electric vehicles and study new policies to preserve the environment

System data communication structures for active-control transport aircraft, volume 2

The application of communication structures to advanced transport aircraft are addressed. First, a set of avionic functional requirements is established, and a baseline set of avionics equipment is defined that will meet the requirements. Three alternative configurations for this equipment are then identified that represent the evolution toward more dispersed systems. Candidate communication structures are proposed for each system configuration, and these are compared using trade off analyses; these analyses emphasize reliability but also address complexity. Multiplex buses are recognized as the likely near term choice with mesh networks being desirable for advanced, highly dispersed systems

iGrace – Emotional Computational Model for EmI Companion Robot.

Chapitre 4We will discuss in this chapter the research in the field of emotional interaction, to maintain a non-verbal interaction with children from 4 to 8 years. This work fits into the EmotiRob project, whose goal is to comfort the children vulnerable and / or in hospitalization with an emotional robot companion. The use of robots in hospitals is still limited; we decided to put forward simple robot architecture and therefore, the emotional expression. In this context, a robot too complex and too voluminous must be avoided. After a study of advanced research on perception and emotional synthesis, it was important to determine the most appropriate way to express emotions in order to have a recognition rate acceptable to our target. Following an experiment on this subject, we were able to determine the degrees of freedom needed for the robot to express the six primary emotions. The second step was the definition and description of our emotional model. In order to have a wide range of expressions, while respecting the number of degrees of freedom, we use the concepts of emotional experiences. They provide us with almost two hundred different behaviors for the model. However we decide as a first step to limit ourselves to only fifty behaviors. This diversification is possible thanks to a mix of emotions linked to the dynamics of emotions. This theoretical model now established, we have started various experiments on a variety of audiences in order to validate the first time in its relevance and the rate of recognition of emotions. The first experiment was performed using a simulator for the capture of speech and the emotional and behavioral synthesis of the robot. This, validates the model assumptions that will be integrated EMI - Emotional Model of Interaction. Future phases of the project will evaluate the robot, both in its expression than in providing comfort to children. We describe the protocols used and present the results for EMI. These experiments will allow us to adjust and adapt the model. We will finish this chapter with a brief description of the robot's architecture, and the improvements to be made for the second version of EMI

System configuration, fault detection, location, isolation and restoration: a review on LVDC Microgrid protections

Low voltage direct current (LVDC) distribution has gained the significant interest of research due to the advancements in power conversion technologies. However, the use of converters has given rise to several technical issues regarding their protections and controls of such devices under faulty conditions. Post-fault behaviour of converter-fed LVDC system involves both active converter control and passive circuit transient of similar time scale, which makes the protection for LVDC distribution significantly different and more challenging than low voltage AC. These protection and operational issues have handicapped the practical applications of DC distribution. This paper presents state-of-the-art protection schemes developed for DC Microgrids. With a close look at practical limitations such as the dependency on modelling accuracy, requirement on communications and so forth, a comprehensive evaluation is carried out on those system approaches in terms of system configurations， fault detection, location, isolation and restoration

MOSFET zero-temperature-coefficient (ZTC) effect modeling anda analysis for low thermal sensitivity analog applications

Continuing scaling of Complementary Metal-Oxide-Semiconductor (CMOS) technologies brings more integration and consequently temperature variation has become more aggressive into a single die. Besides, depending on the application, room ambient temperature may also vary. Therefore, procedures to decrease thermal dependencies of eletronic circuit performances become an important issue to include in both digital and analog Integrated Circuits (IC) design flow. The main purpose of this thesis is to present a design methodology for a typical CMOS Analog design flow to make circuits as insensitivity as possible to temperature variation. MOSFET Zero Temperature Coefficient (ZTC) and Transconductance Zero Temperature Coefficient (GZTC) bias points are modeled to support it. These are used as reference to deliver a set of equations that explains to analog designers how temperature will change transistor operation and hence the analog circuit behavior. The special bias conditions are analyzed using a MOSFET model that is continuous from weak to strong inversion, and both are proven to occur always from moderate to strong inversion operation in any CMOS fabrication process. Some circuits are designed using proposed methodology: two new ZTC-based current references, two new ZTC-based voltage references and four classical Gm-C circuits biased at GZTC bias point (or defined here as GZTC-C filters). The first current reference is a Self-biased CMOS Current Reference (ZSBCR), which generates a current reference of 5 A. It is designed in an 180 nm process, operating with a supply voltage from 1.4V to 1.8 V and occupying around 0:010mm2 of silicon area. From circuit simulations the reference shows an effective temperature coefficient (TCeff ) of 15 ppm/oC from 45 to +85oC, and a fabrication process sensitivity of = = 4:5%, including average process and local mismatch. Simulated power supply sensitivity is estimated around 1%/V. The second proposed current reference is a Resistorless Self-Biased ZTC Switched Capacitor Current Reference (ZSCCR). It is also designed in an 180 nm process, resulting a reference current of 5.88 A under a supply voltage of 1.8 V, and occupying a silicon area around 0:010mm2. Results from circuit simulation show an TCeff of 60 ppm/oC from -45 to +85 oC and a power consumption of 63 W. The first proposed voltage reference is an EMI Resisting MOSFET-Only Voltage Reference (EMIVR), which generates a voltage reference of 395 mV. The circuit is designed in a 130 nm process, occupying around 0.0075 mm2 of silicon area while consuming just 10.3 W. Post-layout simulations present a TCeff of 146 ppm/oC, for a temperature range from 55 to +125oC. An EMI source of 4 dBm (1 Vpp amplitude) injected into the power supply of circuit, according to Direct Power Injection (DPI) specification results in a maximum DC Shift and Peak-to-Peak ripple of -1.7 % and 35.8m Vpp, respectively. The second proposed voltage reference is a 0.5V Schottky-based Voltage Reference (SBVR). It provides three voltage reference outputs, each one utilizing different threshold voltage MOSFETs (standard-VT , low-VT , and zero-VT ), all available in adopted 130 nm CMOS process. This design results in three different and very low reference voltages: 312, 237, and 51 mV, presenting a TCeff of 214, 372, and 953 ppm/oC in a temperature range from -55 to 125oC, respectively. It occupies around 0.014 mm2 of silicon area for a total power consumption of 5.9 W. Lastly, a few example Gm-C circuits are designed using GZTC technique: a single-ended resistor emulator, an impedance inverter, a first order and a second order filter. These circuits are simulated in a 130 nm CMOS commercial process, resulting improved thermal stability in the main performance parameters, in the range from 27 to 53 ppm/°C.A contínua miniaturização das tecnologias CMOS oferece maior capacidade de integração e, consequentemente, as variações de temperatura dentro de uma pastilha de silício têm se apresentado cada vez mais agressivas. Ademais, dependendo da aplicação, a temperatura ambiente a qual o CHIP está inserido pode variar. Dessa maneira, procedimentos para diminuir o impacto dessas variações no desempenho do circuito são imprescindíveis. Tais métodos devem ser incluídos em ambos fluxos de projeto CMOS, analógico e digital, de maneira que o desempenho do sistema se mantenha estável quando a temperatura oscilar. A ideia principal desta dissertação é propor uma metodologia de projeto CMOS analógico que possibilite circuitos com baixa dependência térmica. Como base fundamental desta metodologia, o efeito de coeficiente térmico nulo no ponto de polarização da corrente de dreno (ZTC) e da transcondutância (GZTC) do MOSFET são analisados e modelados. Tal modelamento é responsável por entregar ao projetista analógico um conjunto de equações que esclarecem como a temperatura influencia o comportamento do transistor e, portanto, o comportamento do circuito. Essas condições especiais de polarização são analisadas usando um modelo de MOSFET que é contínuo da inversão fraca para forte. Além disso, é mostrado que as duas condições ocorrem em inversão moderada para forte em qualquer processo CMOS. Algumas aplicações são projetadas usando a metodologia proposta: duas referências de corrente baseadas em ZTC, duas referências de tensão baseadas em ZTC, e quatro circuitos gm-C polarizados em GZTC. A primeira referência de corrente é uma Corrente de Referência CMOS Auto-Polarizada (ZSBCR), que gera uma referência de 5uA. Projetada em CMOS 180 nm, a referência opera com uma tensão de alimentação de 1.4 à 1.8 V, ocupando uma área em torno de 0:010mm2. Segundo as simulações, o circuito apresenta um coeficiente de temperatura efetivo (TCeff ) de 15 ppm/oC para -45 à +85 oC e uma sensibilidade à variação de processo de = = 4:5% incluindo efeitos de variabilidade dos tipos processo e descasamento local. A sensibilidade de linha encontrada nas simulações é de 1%=V . A segunda referência de corrente proposta é uma Corrente de Referência Sem Resistor Auto-Polarizada com Capacitor Chaveado (ZSCCR). O circuito é projetado também em 180 nm, resultando em uma corrente de referência de 5.88 A, para uma tensão de alimentação de 1.8 V, e ocupando uma área de 0:010mm2. Resultados de simulações mostram um TCeff de 60 ppm/oC para um intervalo de temperatura de -45 à +85 oC e um consumo de potência de 63 W. A primeira referência de tensão proposta é uma Referência de Tensão resistente à pertubações eletromagnéticas contendo apenas MOSFETs (EMIVR), a qual gera um valor de referência de 395 mV. O circuito é projetado no processo CMOS 130 nm, ocupando em torno de 0.0075 mm2 de área de silício, e consumindo apenas 10.3 W. Simulações pós-leiaute apresentam um TCeff de 146 ppm/oC, para um intervalo de temperatura de 55 à +125oC. Uma fonte EMI de 4 dBm (1 Vpp de amplitude) aplicada na alimentação do circuito, de acordo com o padrão Direct Power Injection (DPI), resulta em um máximo de desvio DC e ondulação Pico-à-Pico de -1.7 % e 35.8m Vpp, respectivamente. A segunda referência de tensão é uma Tensão de Referência baseada em diodo Schottky com 0.5V de alimentação (SBVR). Ela gera três saídas, cada uma utilizando MOSFETs com diferentes tensões de limiar (standard-VT , low-VT , e zero-VT ). Todos disponíveis no processo adotado CMOS 130 nm. Este projeto resulta em três diferentes voltages de referências: 312, 237, e 51 mV, apresentando um TCeff de 214, 372, e 953 ppm/oC no intervalo de temperatura de -55 à 125oC, respectivamente. O circuito ocupa em torno de 0.014 mm2, consumindo um total de 5.9 W. Por último, circuitos gm-C são projetados usando o conceito GZTC: um emulador de resistor, um inversor de impedância, um filtro de primeira ordem e um filtro de segunda ordem. Os circuitos também são simulados no processo CMOS 130 nm, resultando em uma melhora na estabilidade térmica dos seus principais parâmetros, indo de 27 à 53 ppm/°C

Textile materials

In this specialised publication, the reader will find research results and real engineering developments in the field of modern technical textiles. Modern technical textile materials, ranging from ordinary reinforcing fabrics in the construction and production of modern composite materials to specialised textile materials in the composition of electronics, sensors and other intelligent devices, play an important role in many areas of human technical activity. The use of specialized textiles, for example, in medicine makes it possible to achieve important results in diagnostics, prosthetics, surgical practice and the practice of using specialized fabrics at the health recovery stage. The use of reinforcing fabrics in construction can significantly improve the mechanical properties of concrete and various plaster mixtures, which increases the reliability and durability of various structures and buildings in general. In mechanical engineering, the use of composite materials reinforced with special textiles can simultaneously reduce weight and improve the mechanical properties of machine parts. Fabric- reinforced composites occupy a significant place in the automotive industry, aerospace engineering, and shipbuilding. Here, the mechanical reliability and thermal resistance of the body material of the product, along with its low weight, are very relevant. The presented edition will be useful and interesting for engineers and researchers whose activities are related to the design, production and application of various technical textile materials