Aggressive undervolting of FPGAs : power & reliability trade-offs

In this work, we evaluate aggressive undervolting, i.e., voltage underscaling below the nominal level to reduce the energy consumption of Field Programmable Gate Arrays (FPGAs). Usually, voltage guardbands are added by chip vendors to ensure the worst-case process and environmental scenarios. Through experimenting on several FPGA architectures, we con¿rm a large voltage guardband for several FPGA components, which in turn, delivers signi¿cant power savings. However, further undervolting below the voltage guardband may cause reliability issues as the result of the circuit delay increase, and faults might start to appear. We extensively characterize the behavior of these faults in terms of the rate, location, type, as well as sensitivity to environmental temperature, primarily focusing on FPGA on-chip memories, or Block RAMs (BRAMs). Understanding this behavior can allow to deploy ef¿cient mitigation techniques, and in turn, FPGA-based designs can be improved for better energy, reliability, and performance trade-offs. Finally, as a case study, we evaluate a typical FPGA-based Neural Network (NN) accelerator when the FPGA voltage is underscaled. In consequence, the substantial NN energy savings come with the cost of NN accuracy loss. To attain power savings without NN accuracy loss below the voltage guardband gap, we proposed an application-aware technique and we also, evaluated the built-in Error-Correcting Code (ECC) mechanism. Hence, First, we developed an application-dependent BRAMs placement technique that relies on the deterministic behavior of undervolting faults, and mitigates these faults by mapping the most reliability sensitive NN parameters to BRAM blocks that are relatively more resistant to undervolting faults. Second, as a more general technique, we applied the built-in ECC of BRAMs and observed a signi¿cant fault coverage capability thanks to the behavior of undervolting faults, with a negligible power consumption overhead.En este trabajo, evaluamos el reducir el voltaje en forma agresiva, es decir, bajar la tensión por debajo del nivel nominal para reducir el consumo de energía en Field Programmable Gate Arrays (FPGA). Por lo general, los vendedores de chips establecen margen de seguridad al voltaje para garantizar el funcionamiento de los mismos en el peor de los casos y en los peores escenarios ambientales. Mediante la experimentación en varias arquitecturas FPGA, confirmamos que hay un margen de seguridad de voltaje grande en varios de los componentes de la FPGA, que a su vez, nos ofrece ahorros de energía significativos. Sin embargo, un trabajar a un voltaje por debajo del margen de seguridad del voltaje puede causar problemas de confiabilidad a medida ya que aumenta el retardo del circuito y pueden comenzar a aparecer fallos. Caracterizamos ampliamente el comportamiento de estos fallos en términos de velocidad, ubicación, tipo, así como la sensibilidad a la temperatura ambiental, centrándonos principalmente en memorias internas de la FPGA, o Block RAM (BRAM). Comprender este comportamiento puede permitir el desarrollo de técnicas eficientes de mitigación y, a su vez, mejorar los diseños basados en FPGA para obtener ahorros en energía, una mayor confiabilidad y un mayor rendimiento. Finalmente, como caso de estudio, evaluamos un acelerador típico de Redes Neuronales basado en FPGA cuando el voltaje de la FPGA esta por debajo del nivel mínimo de seguridad. En consecuencia, los considerables ahorros de energía de la red neuronal vienen asociados con la pérdida de precisión de la red neuronal. Para obtener ahorros de energía sin una pérdida de precisión en la red neuronal por debajo del margen de seguridad del voltaje, proponemos una técnica que tiene en cuenta la aplicación, asi mismo, evaluamos el mecanismo integrado en las BRAMs de Error Correction Code (ECC). Por lo tanto, en primer lugar, desarrollamos una técnica de colocación de BRAM dependiente de la aplicación que se basa en el comportamiento determinista de las fallos cuando la FPGA funciona por debajo del margen de seguridad, y se mitigan estos fallos asignando los parámetros de la red neuronal más sensibles a producir fallos a los bloques BRAM que son relativamente más resistentes a los fallos. En segundo lugar, como técnica más general, aplicamos el ECC incorporado de los BRAM y observamos una capacidad de cobertura de fallos significativo gracias a las características de comportamiento de fallos, con una sobrecoste de consumo de energía insignificantePostprint (published version

DRAM Bender: An Extensible and Versatile FPGA-based Infrastructure to Easily Test State-of-the-art DRAM Chips

To understand and improve DRAM performance, reliability, security and energy efficiency, prior works study characteristics of commodity DRAM chips. Unfortunately, state-of-the-art open source infrastructures capable of conducting such studies are obsolete, poorly supported, or difficult to use, or their inflexibility limit the types of studies they can conduct. We propose DRAM Bender, a new FPGA-based infrastructure that enables experimental studies on state-of-the-art DRAM chips. DRAM Bender offers three key features at the same time. First, DRAM Bender enables directly interfacing with a DRAM chip through its low-level interface. This allows users to issue DRAM commands in arbitrary order and with finer-grained time intervals compared to other open source infrastructures. Second, DRAM Bender exposes easy-to-use C++ and Python programming interfaces, allowing users to quickly and easily develop different types of DRAM experiments. Third, DRAM Bender is easily extensible. The modular design of DRAM Bender allows extending it to (i) support existing and emerging DRAM interfaces, and (ii) run on new commercial or custom FPGA boards with little effort. To demonstrate that DRAM Bender is a versatile infrastructure, we conduct three case studies, two of which lead to new observations about the DRAM RowHammer vulnerability. In particular, we show that data patterns supported by DRAM Bender uncovers a larger set of bit-flips on a victim row compared to the data patterns commonly used by prior work. We demonstrate the extensibility of DRAM Bender by implementing it on five different FPGAs with DDR4 and DDR3 support. DRAM Bender is freely and openly available at https://github.com/CMU-SAFARI/DRAM-Bender.Comment: To appear in TCAD 202

Understanding and Improving the Latency of DRAM-Based Memory Systems

Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic random-access memory), which has been used as the physical substrate for main memory. In stark contrast with capacity and bandwidth, DRAM latency has remained almost constant, reducing by only 1.3x in the same time frame. Therefore, long DRAM latency continues to be a critical performance bottleneck in modern systems. Increasing core counts, and the emergence of increasingly more data-intensive and latency-critical applications further stress the importance of providing low-latency memory access. In this dissertation, we identify three main problems that contribute significantly to long latency of DRAM accesses. To address these problems, we present a series of new techniques. Our new techniques significantly improve both system performance and energy efficiency. We also examine the critical relationship between supply voltage and latency in modern DRAM chips and develop new mechanisms that exploit this voltage-latency trade-off to improve energy efficiency. The key conclusion of this dissertation is that augmenting DRAM architecture with simple and low-cost features, and developing a better understanding of manufactured DRAM chips together lead to significant memory latency reduction as well as energy efficiency improvement. We hope and believe that the proposed architectural techniques and the detailed experimental data and observations on real commodity DRAM chips presented in this dissertation will enable development of other new mechanisms to improve the performance, energy efficiency, or reliability of future memory systems.Comment: PhD Dissertatio

Temperature Variation Aware Energy Optimization in Heterogeneous MPSoCs

Thermal effects are rapidly gaining importance in nanometer heterogeneous integrated systems. Increased power density, coupled with spatio-temporal variability of chip workload, cause lateral and vertical temperature non-uniformities (variations) in the chip structure. The assumption of an uniform temperature for a large circuit leads to inaccurate determination of key design parameters. To improve design quality, we need precise estimation of temperature at detailed spatial resolution which is very computationally intensive. Consequently, thermal analysis of the designs needs to be done at multiple levels of granularity. To further investigate the flow of chip/package thermal analysis we exploit the Intel Single Chip Cloud Computer (SCC) and propose a methodology for calibration of SCC on-die temperature sensors. We also develop an infrastructure for online monitoring of SCC temperature sensor readings and SCC power consumption. Having the thermal simulation tool in hand, we propose MiMAPT, an approach for analyzing delay, power and temperature in digital integrated circuits. MiMAPT integrates seamlessly into industrial Front-end and Back-end chip design flows. It accounts for temperature non-uniformities and self-heating while performing analysis. Furthermore, we extend the temperature variation aware analysis of designs to 3D MPSoCs with Wide-I/O DRAM. We improve the DRAM refresh power by considering the lateral and vertical temperature variations in the 3D structure and adapting the per-DRAM-bank refresh period accordingly. We develop an advanced virtual platform which models the performance, power, and thermal behavior of a 3D-integrated MPSoC with Wide-I/O DRAMs in detail. Moving towards real-world multi-core heterogeneous SoC designs, a reconfigurable heterogeneous platform (ZYNQ) is exploited to further study the performance and energy efficiency of various CPU-accelerator data sharing methods in heterogeneous hardware architectures. A complete hardware accelerator featuring clusters of OpenRISC CPUs, with dynamic address remapping capability is built and verified on a real hardware

The Efficacy of Error Mitigation Techniques for DRAM Retention Failures: A Comparative Experimental Study

As DRAM cells continue to shrink, they become more susceptible to retention failures. DRAM cells that permanently exhibit short retention times are fairly easy to identify and repair through the use of memory tests and row and column redundancy. However, the retention time of many cells may vary over time due to a property called Variable Retention Time (VRT). Since these cells intermittently transition between failing and non-failing states, they are particularly difficult to identify through memory tests alone. In addition, the high temperature packaging process may aggravate this problem as the susceptibility of cells to VRT increases after the assembly of DRAM chips. A promising alternative to manufacturetime testing is to detect and mitigate retention failures after the system has become operational. Such a system would require mechanisms to detect and mitigate retention failures in the field, but woul

Adaptive-latency DRAM: Optimizing DRAM timing for the common-case

In current systems, memory accesses to a DRAM chip must obey a set of minimum latency restrictions specified in the DRAM standard. Such timing parameters exist to guarantee re-liable operation. When deciding the timing parameters, DRAM manufacturers incorporate a very large margin as a provision against two worst-case scenarios. First, due to process varia-tion, some outlier chips are much slower than others and can-not be operated as fast. Second, chips become slower at higher temperatures, and all chips need to operate reliably at the high-est supported (i.e., worst-case) DRAM temperature (85◦C). In this paper, we show that typical DRAM chips operating at typ-ical temperatures (e.g., 55◦C) are capable of providing a much smaller access latency, but are nevertheless forced to operate at the largest latency of the worst-case. Our goal in this paper is to exploit the extra margin that is built into the DRAM timing parameters to improve perfor-mance. Using an FPGA-based testing platform, we first char-acterize the extra margin for 115 DRAM modules from three major manufacturers. Our results demonstrate that it is possi-ble to reduce four of the most critical timing parameters by a minimum/maximum of 17.3%/54.8 % at 55◦C without sac-rificing correctness. Based on this characterization, we pro-pose Adaptive-Latency DRAM (AL-DRAM), a mechanism that adaptively reduces the timing parameters for DRAM modules based on the current operating condition. AL-DRAM does not require any changes to the DRAM chip or its interface. We evaluate AL-DRAM on a real system that allows us to re-configure the timing parameters at runtime. We show that AL-DRAM improves the performance of memory-intensive work-loads by an average of 14 % without introducing any errors. We discuss and show why AL-DRAM does not compromise re-liability. We conclude that dynamically optimizing the DRAM timing parameters can reliably improve system performance. 1