Sustainability report

Altres títols : Sustainability highlights

Method of joining aluminum to stainless steel Patent

Joining aluminum to stainless steel by bonding aluminum coatings onto titanium coated stainless steel and brazing aluminum to aluminum/titanium coated stee

Metal nanoring and tube formation on carbon nanotubes

The structural and electronic properties of aluminum covered single wall carbon nanotubes (SWNT) are studied from first-principles for a large number of coverage. Aluminum-aluminum interaction that is stronger than aluminum-tube interaction, prevents uniform metal coverage, and hence gives rise to the clustering. However, a stable aluminum ring and aluminum nanotube with well defined patterns can also form around the semiconducting SWNT and lead to metallization. The persistent current in the Al nanoring is discussed to show that a high magnetic field can be induced at the center of SWNT.Comment: Submitted to Physical Review

Explosive welding technique for joining aluminum and steel tubes

Silver sheet is wrapped around aluminum portion of joint. Mylar powder box is wrapped over silver sheet. Explosion welds silver to aluminum. Stainless-steel tube is placed over silver-aluminum interface. Mylar powder box, covered with Mylar tape, is wrapped around steel member. Explosion welds steel to silver-aluminum interface

Study of crevice-galvanic corrosion of aluminum

Corrosion effects of aluminum-copper and aluminum-nickel couples in oxygenated distilled water, and aluminum alloys in oxygenated copper sulfate solution were studied. One of each of the couples had a water tight seal, and showed no substantial corrosion, and of the unsealed couples, only the aluminum-copper developed corrosion

Thin-film ultraviolet detector and spectrometer

Typical metal-insulator-metal detector device is formed on quartz substrate. Base electrode is 3 to 6 nm aluminum layer, overcoated with 3 to 6 nm aluminum oxide or aluminum nitride, and capped with counter electrode of gold, lead, magnesium, or aluminum. Photoelectric yield data are given for Al-AlN-Au structure

Comparative study of the growth of sputtered aluminum oxide films on organic and inorganic substrates

We present a comparative study of the growth of the technologically highly relevant gate dielectric and encapsulation material aluminum oxide in inorganic and also organic heterostructures. Atomic force microscopy studies indicate strong similarities in the surface morphology of aluminum oxide films grown on these chemically different substrates. In addition, from X-ray reflectivity measurements we extract the roughness exponent \beta of aluminum oxide growth on both substrates. By renormalising the aluminum oxide roughness by the roughness of the underlying organic film we find good agreement with \beta as obtained from the aluminum oxide on silicon oxide (\beta = 0.38 \pm 0.02), suggesting a remarkable similarity of the aluminum oxide growth on the two substrates under the conditions employed

Method of fluxless brazing and diffusion bonding of aluminum containing components

A method of diffusion bonding and fluxless brazing of aluminum containing components is reported. The aluminum surfaces are freed of any aluminum oxide coating and are coated with a polymeric sealer which can be thermally removed leaving essentially no residue. The polymeric sealer is being removed in a substantially oxygen free environment, and the aluminum components are then being brazed or diffusion bonded without the use of a flux to remove oxide coating