Nitrided La 2O 3 as charge-trapping layer for nonvolatile memory applications

Charge-trapping characteristics of La 2O 3 with and without nitrogen incorporation were investigated based on Al/Al 2O 3/La 2O 3/SiO 2Si (MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Compared with the MONOS capacitor with La 2O 3 as charge-trapping layer, the one with nitrided La 2O 3 showed a larger memory window (4.9 V at ±10-V sweeping voltage), higher program speed (4.9 V at 1-ms +14 V), and smaller charge loss (27% after 10 years), due to the nitrided La 2O 3 film exhibiting less crystallized structure and high trap density induced by nitrogen incorporation, and suppressed leakage by nitrogen passivation. © 2012 IEEE.published_or_final_versio

Improved performance of yttrium-doped Al 2O 3 as inter-poly dielectric for flash-memory applications

Yttrium-doped Al 2O 3Y xAl yO) with different yttrium contents prepared by co-sputtering method is investigated as the inter-poly dielectric (IPD) for flash memory applications. A poor SiO 2-like interlayer formed at the IPD/Si interface is confirmed by X-ray photoelectron spectroscopy, and can be suppressed by Y doping through the transformation of silica into silicate. Compared with Al 2O 3 and Y 2O 3 films, the optimized Y xAl yO film shows lower interface-state density, lower bulk charge-trapping density, higher dielectric constant, and smaller gate leakage, due to the suppressed interlayer and good thermal property ascribed to appropriate Y and Al contents in the film. Therefore, the optimized Y xAl yO film is a promising candidate as the IPD for flash memory. © 2010 IEEE.published_or_final_versio

Temperature dependence of current transport in Al/Al 2O 3 nanocomposite thin films

In this work, Al/Al 2O 3 nanocomposite thin film is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. It is found that the current conduction at low fields is greatly enhanced with temperature. The current increase can be attributed to the decrease in the tunneling resistance and/or the formation of some tunneling paths due to the release of some measurement-induced charges trapped in the thin film as a result of increase in the temperature. The current conduction evolves with a trend toward a three-dimensional transport as the temperature increases. © 2011 American Institute of Physics.published_or_final_versio

Preparation of Al 2O 3and AlN nanotubes by atomic layer deposition

Al 2O 3 and AlN nanotubes were fabricated by depositing conformal thin films via atomic layer deposition (ALD) on electrospun nylon 66 (PA66) nanofiber templates. Depositions were carried out at 200°C, using trimethylaluminum (TMAl), water (H 2O), and ammonia (NH 3) as the aluminum, oxygen, and nitrogen precursors, respectively. Deposition rates of Al 2O 3 and AlN at this temperature were ∼1.05 and 0.86 Å/cycle. After the depositions, Al 2O 3- and AlN-coated nanofibers were calcinated at 500°C for 2 h in order to remove organic components. Nanotubes were characterized by using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). AlN nanotubes were polycrystalline as determined by high resolution TEM (HR-TEM) and selected area electron diffraction (SAED). TEM images of all the samples reported in this study indicated uniform wall thicknesses. © 2012 Materials Research Society

CVD of CrO2 Thin Films: Influence of the Deposition Parameters on their Structural and Magnetic Properties

This work reports on the synthesis of CrO2 thin films by atmospheric pressure CVD using chromium trioxide (CrO3) and oxygen. Highly oriented (100) CrO2 films containing highly oriented (0001) Cr2O3 were grown onto Al2O3(0001) substrates. Films display a sharp magnetic transition at 375 K and a saturation magnetization of 1.92 Bohr magnetons per f.u., close to the bulk value of 2 Bohr magnetons per f.u. for the CrO2. Keywords: Chromium dioxide (CrO2), Atmospheric pressure CVD, Spintronics.Comment: 5 pages, 6 figure

Slow positron beam generator for lifetime studies

A slow positron beam generator uses a conductive source residing between two test films. Moderator pieces are placed next to the test film on the opposite side of the conductive source. A voltage potential is applied between the moderator pieces and the conductive source. Incident energetic positrons: (1) are emitted from the conductive source; (2) are passed through test film; and (3) isotropically strike moderator pieces before diffusing out of the moderator pieces as slow positrons, respectively. The slow positrons diffusing out of moderator pieces are attracted to the conductive source which is held at an appropriate potential below the moderator pieces. The slow positrons have to pass through the test films before reaching the conductive source. A voltage is adjusted so that the potential difference between the moderator pieces and the conductive source forces the positrons to stop in the test films. Measurable annihilation radiation is emitted from the test film when positrons annihilate (combine) with electrons in the test film

Tribological properties of Ag/Ti films on Al2O3 ceramic substrates

Ag solid lubricant films, with a thin Ti interlayer for enhanced adhesion, were sputter deposited on Al2O3 substrate disks to reduce friction and wear. The dual Ag/Ti films were tested at room temperature in a pin-on-disk tribometer sliding against bare, uncoated Al2O3 pins under a 4.9 N load at a sliding velocity of 1 m/s. The Ag/Ti films reduced the friction coefficient by 50 percent to about 0.41 compared to unlubricated baseline specimens. Pin wear was reduced by a factor of 140 and disk wear was reduced by a factor of 2.5 compared to the baseline. These films retain their good tribological properties including adhesion after heat treatments at 850 C and thus may be able to lubricate over a wide temperature range. This lubrication technique is applicable to space lubrication, advanced heat engines, and advanced transportation systems

Spreading characteristics of an insoluble surfactant film on a thin liquid layer: comparison between theory and experiment

We describe measurements of the surface slope and reconstruction of the interface shape during the spreading of an oleic acid film on the surface of a thin aqueous glycerol mixture. This experimental system closely mimics the behaviour of an insoluble surfactant film driven to spread on a thin viscous layer under the action of a tangential (Marangoni) surface stress. Refracted image Moiré topography is used to monitor the evolution of the surface slope over macroscopic distances, from which the time variant interface shape and advancing speed of the surfactant film are inferred. The interfacial profile exhibits a strong surface depression ahead of the surfactant source capped by an elevated rim at the surfactant leading edge. The surface slope and shape as well as the propagation characteristics of the advancing rim can be compared directly with theoretical predictions. The agreement is quite strong when the model allows for a small level of pre-existing surface contamination of the initial liquid layer. Comparison between theoretical and experimental profiles reveals the importance of the initial shear stress in determining the evolution in the film thickness and surfactant distribution. This initial stress appears to thin the underlying liquid support so drastically that the surfactant droplet behaves as a finite and not an infinite source, even though there is always an excess of surfactant present at the origin