Single-Event Upset Analysis and Protection in High Speed Circuits

The effect of single-event transients (SETs) (at a combinational node of a design) on the system reliability is becoming a big concern for ICs manufactured using advanced technologies. An SET at a node of combinational part may cause a transient pulse at the input of a flip-flop and consequently is latched in the flip-flop and generates a soft-error. When an SET conjoined with a transition at a node along a critical path of the combinational part of a design, a transient delay fault may occur at the input of a flip-flop. On the other hand, increasing pipeline depth and using low power techniques such as multi-level power supply, and multi-threshold transistor convert almost all paths in a circuit to critical ones. Thus, studying the behavior of the SET in these kinds of circuits needs special attention. This paper studies the dynamic behavior of a circuit with massive critical paths in the presence of an SET. We also propose a novel flip-flop architecture to mitigate the effects of such SETs in combinational circuits. Furthermore, the proposed architecture can tolerant a single event upset (SEU) caused by particle strike on the internal nodes of a flip-flo

On the Evaluation of SEEs on Open-Source Embedded Static RAMs

3Static RAM modules are widely adopted in high performance systems. Single Event Effects (SEEs) resilient memories are required in many embedded systems applied in automotive and aerospace applications to increase their overall resiliency against SEEs. The current SEE resilient SRAM modules are obtained by applying radiation-hardened by design solutions which leads to elevated area overhead and difficulty to tune the resiliency capability with respect to the particle’s radiation profile. To overcome these limitations, we propose a methodology for the analysis and mitigation of embedded SRAMs generated by the OpenRAM memory compiler. A technology-oriented radiation analysis tool is presented to support the interaction of the charged radiation particles with the SRAM layout and depict the sensitive transistors of the SRAM memory. A selective duplication of the sensitive transistors has been applied to the 6T-SRAM cell designed at the layout level. The designed cell is included in the OpenRAM compiler and used to generate a mitigated 8Kb SRAM-bank. We evaluated the SEEs sensitivity by comparative simulation-based radiation analysis observing a reduction more than 6 times with respect to the original 6T-SRAM cell for the SEE sensitivity at high energy heavy ions particles, with negligible degradation of operations margins and power consumption and area overhead of less than ̴4%.partially_openopenAzimi, Sarah; De Sio, Corrado; Sterpone, LucaAzimi, Sarah; De Sio, Corrado; Sterpone, Luc

Statistical circuit simulations - from ‘atomistic’ compact models to statistical standard cell characterisation

This thesis describes the development and application of statistical circuit simulation methodologies to analyse digital circuits subject to intrinsic parameter fluctuations. The specific nature of intrinsic parameter fluctuations are discussed, and we explain the crucial importance to the semiconductor industry of developing design tools which accurately account for their effects. Current work in the area is reviewed, and three important factors are made clear: any statistical circuit simulation methodology must be based on physically correct, predictive models of device variability; the statistical compact models describing device operation must be characterised for accurate transient analysis of circuits; analysis must be carried out on realistic circuit components. Improving on previous efforts in the field, we posit a statistical circuit simulation methodology which accounts for all three of these factors. The established 3-D Glasgow atomistic simulator is employed to predict electrical characteristics for devices aimed at digital circuit applications, with gate lengths from 35 nm to 13 nm. Using these electrical characteristics, extraction of BSIM4 compact models is carried out and their accuracy in performing transient analysis using SPICE is validated against well characterised mixed-mode TCAD simulation results for 35 nm devices. Static d.c. simulations are performed to test the methodology, and a useful analytic model to predict hard logic fault limitations on CMOS supply voltage scaling is derived as part of this work. Using our toolset, the effect of statistical variability introduced by random discrete dopants on the dynamic behaviour of inverters is studied in detail. As devices scaled, dynamic noise margin variation of an inverter is increased and higher output load or input slew rate improves the noise margins and its variation. Intrinsic delay variation based on CV/I delay metric is also compared using ION and IEFF definitions where the best estimate is obtained when considering ION and input transition time variations. Critical delay distribution of a path is also investigated where it is shown non-Gaussian. Finally, the impact of the cell input slew rate definition on the accuracy of the inverter cell timing characterisation in NLDM format is investigated

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

On Fault Tolerance Methods for Networks-on-Chip

Technology scaling has proceeded into dimensions in which the reliability of manufactured devices is becoming endangered. The reliability decrease is a consequence of physical limitations, relative increase of variations, and decreasing noise margins, among others. A promising solution for bringing the reliability of circuits back to a desired level is the use of design methods which introduce tolerance against possible faults in an integrated circuit. This thesis studies and presents fault tolerance methods for network-onchip (NoC) which is a design paradigm targeted for very large systems-onchip. In a NoC resources, such as processors and memories, are connected to a communication network; comparable to the Internet. Fault tolerance in such a system can be achieved at many abstraction levels. The thesis studies the origin of faults in modern technologies and explains the classification to transient, intermittent and permanent faults. A survey of fault tolerance methods is presented to demonstrate the diversity of available methods. Networks-on-chip are approached by exploring their main design choices: the selection of a topology, routing protocol, and flow control method. Fault tolerance methods for NoCs are studied at different layers of the OSI reference model. The data link layer provides a reliable communication link over a physical channel. Error control coding is an efficient fault tolerance method especially against transient faults at this abstraction level. Error control coding methods suitable for on-chip communication are studied and their implementations presented. Error control coding loses its effectiveness in the presence of intermittent and permanent faults. Therefore, other solutions against them are presented. The introduction of spare wires and split transmissions are shown to provide good tolerance against intermittent and permanent errors and their combination to error control coding is illustrated. At the network layer positioned above the data link layer, fault tolerance can be achieved with the design of fault tolerant network topologies and routing algorithms. Both of these approaches are presented in the thesis together with realizations in the both categories. The thesis concludes that an optimal fault tolerance solution contains carefully co-designed elements from different abstraction levelsSiirretty Doriast

Autonomous Recovery Of Reconfigurable Logic Devices Using Priority Escalation Of Slack

Field Programmable Gate Array (FPGA) devices offer a suitable platform for survivable hardware architectures in mission-critical systems. In this dissertation, active dynamic redundancy-based fault-handling techniques are proposed which exploit the dynamic partial reconfiguration capability of SRAM-based FPGAs. Self-adaptation is realized by employing reconfiguration in detection, diagnosis, and recovery phases. To extend these concepts to semiconductor aging and process variation in the deep submicron era, resilient adaptable processing systems are sought to maintain quality and throughput requirements despite the vulnerabilities of the underlying computational devices. A new approach to autonomous fault-handling which addresses these goals is developed using only a uniplex hardware arrangement. It operates by observing a health metric to achieve Fault Demotion using Recon- figurable Slack (FaDReS). Here an autonomous fault isolation scheme is employed which neither requires test vectors nor suspends the computational throughput, but instead observes the value of a health metric based on runtime input. The deterministic flow of the fault isolation scheme guarantees success in a bounded number of reconfigurations of the FPGA fabric. FaDReS is then extended to the Priority Using Resource Escalation (PURE) online redundancy scheme which considers fault-isolation latency and throughput trade-offs under a dynamic spare arrangement. While deep-submicron designs introduce new challenges, use of adaptive techniques are seen to provide several promising avenues for improving resilience. The scheme developed is demonstrated by hardware design of various signal processing circuits and their implementation on a Xilinx Virtex-4 FPGA device. These include a Discrete Cosine Transform (DCT) core, Motion Estimation (ME) engine, Finite Impulse Response (FIR) Filter, Support Vector Machine (SVM), and Advanced Encryption Standard (AES) blocks in addition to MCNC benchmark circuits. A iii significant reduction in power consumption is achieved ranging from 83% for low motion-activity scenes to 12.5% for high motion activity video scenes in a novel ME engine configuration. For a typical benchmark video sequence, PURE is shown to maintain a PSNR baseline near 32dB. The diagnosability, reconfiguration latency, and resource overhead of each approach is analyzed. Compared to previous alternatives, PURE maintains a PSNR within a difference of 4.02dB to 6.67dB from the fault-free baseline by escalating healthy resources to higher-priority signal processing functions. The results indicate the benefits of priority-aware resiliency over conventional redundancy approaches in terms of fault-recovery, power consumption, and resource-area requirements. Together, these provide a broad range of strategies to achieve autonomous recovery of reconfigurable logic devices under a variety of constraints, operating conditions, and optimization criteria

IC design for reliability

textAs the feature size of integrated circuits goes down to the nanometer scale, transient and permanent reliability issues are becoming a significant concern for circuit designers. Traditionally, the reliability issues were mostly handled at the device level as a device engineering problem. However, the increasing severity of reliability challenges and higher error rates due to transient upsets favor higher-level design for reliability (DFR). In this work, we develop several methods for DFR at the circuit level. A major source of transient errors is the single event upset (SEU). SEUs are caused by high-energy particles present in the cosmic rays or emitted by radioactive contaminants in the chip packaging materials. When these particles hit a N+/P+ depletion region of an MOS transistor, they may generate a temporary logic fault. Depending on where the MOS transistor is located and what state the circuit is at, an SEU may result in a circuit-level error. We analyze SEUs both in combinational logic and memories (SRAM). For combinational logic circuit, we propose FASER, a Fast Analysis tool of Soft ERror susceptibility for cell-based designs. The efficiency of FASER is achieved through its static and vector-less nature. In order to evaluate the impact of SEU on SRAM, a theory for estimating dynamic noise margins is developed analytically. The results allow predicting the transient error susceptibility of an SRAM cell using a closedform expression. Among the many permanent failure mechanisms that include time-dependent oxide breakdown (TDDB), electro-migration (EM), hot carrier effect (HCE), and negative bias temperature instability (NBTI), NBTI has recently become important. Therefore, the main focus of our work is NBTI. NBTI occurs when the gate of PMOS is negatively biased. The voltage stress across the gate generates interface traps, which degrade the threshold voltage of PMOS. The degraded PMOS may eventually fail to meet timing requirement and cause functional errors. NBTI becomes severe at elevated temperatures. In this dissertation, we propose a NBTI degradation model that takes into account the temperature variation on the chip and gives the accurate estimation of the degraded threshold voltage. In order to account for the degradation of devices, traditional design methods add guard-bands to ensure that the circuit will function properly during its lifetime. However, the worst-case based guard-bands lead to significant penalty in performance. In this dissertation, we propose an effective macromodel-based reliability tracking and management framework, based on a hybrid network of on-chip sensors, consisting of temperature sensors and ring oscillators. The model is concerned specifically with NBTIinduced transistor aging. The key feature of our work, in contrast to the traditional tracking techniques that rely solely on direct measurement of the increase of threshold voltage or circuit delay, is an explicit macromodel which maps operating temperature to circuit degradation (the increase of circuit delay). The macromodel allows for costeffective tracking of reliability using temperature sensors and is also essential for enabling the control loop of the reliability management system. The developed methods improve the over-conservatism of the device-level, worstcase reliability estimation techniques. As the severity of reliability challenges continue to grow with technology scaling, it will become more important for circuit designers/CAD tools to be equipped with the developed methods.Electrical and Computer Engineerin