Index to NASA Tech Briefs, January - June 1966

Index to NASA technological innovations for January-June 196

Index to nasa tech briefs, issue number 2

Annotated bibliography on technological innovations in NASA space program

Design of an RF CMOS Power Amplifier for Wireless Sensor Networks

The Power Amplifier (PA) is the last Radio Frequency (RF) building block in a transmitter, directly driving an antenna. The low power RF input signal of the PA is amplified to a significant power RF output signal by converting DC power into RF power. Since the PA consumes a majority of the power, efficiency plays one of the most important roles in a PA design. Designing an efficient, fully integrated RF PA that can operate at low supply voltage (1.2V), low power, and low RF frequency (433MHz) is a major challenge. The class E Power Amplifier, which is one type of switch mode PA, is preferred in such a scenario because of its higher theoretical efficiency compared to linear power amplifiers. A controllable class E RF power amplifier design implemented in 0.13 µm CMOS process is presented. The circuit was designed, simulated, laid out, fabricated, and tested. The PA will be integrated as a part of a complete wireless transceiver system using the same process

An investigation of the effects of radiation on silicon nitride insulated gate /MNS/ transistors Final report

Radiation effects on silicon nitride insulated gate field effect transistor

Electronic test instrumentation and techniques: A compilation

The uses of test equipment and techniques used in space research and development programs are discussed. Modifications and adaptations to enlarge the scope of usefulness or divert the basic uses to alternate applications are analyzed. The items of equipment which have been of benefit to professional personnel in the enlargement and improvement of quality control capabilities are identified. Items which have been simplified or made more accurate in conducting measurements are described

Transducer applications, a compilation

The characteristics and applications of transducers are discussed. Subjects presented are: (1) thermal measurements, (2) liquid level and fluid flow measurements, (3) pressure transducers, (4) stress-strain measurements, (5) acceleration and velocity measurements, (6) displacement and angular rotation, and (7) transducer test and calibration methods

Optical properties monitor: Experiment definition phase

The stability of materials used in the space environment will continue to be a limiting technology for space missions. The Optical Properties Monitor (OPM) Experiment provides a comprehensive space research program to study the effects of the space environment-both natural and induced-on optical, thermal and space power materials. The OPM Experiment was selected for definition under the NASA/OAST In-Space Technology Experiment Program. The results of the OPM Definition Phase are presented. The OPM Experiment will expose selected materials to the space environment and measure the effects with in-space optical measurements. In-space measurements include total hemispherical reflectance total integrated scatter and VUV reflectance/transmittance. The in-space measurements will be augmented with extensive pre- and post-flight sample measurements to determine other optical, mechanical, electrical, chemical or surface effects of space exposure. Environmental monitors will provide the amount and time history of the sample exposure to solar irradiation, atomic oxygen and molecular contamination

SIRU development. Volume 1: System development

A complete description of the development and initial evaluation of the Strapdown Inertial Reference Unit (SIRU) system is reported. System development documents the system mechanization with the analytic formulation for fault detection and isolation processing structure; the hardware redundancy design and the individual modularity features; the computational structure and facilities; and the initial subsystem evaluation results

CMOS MESFET Cascode Amplifiers for RFIC Applications

abstract: There is an ever-increasing demand for higher bandwidth and data rate ensuing from exploding number of radio frequency integrated systems and devices. As stated in the Shannon-Hartley theorem, the maximum achievable data rate of a communication channel is linearly proportional to the system bandwidth. This is the main driving force behind pushing wireless systems towards millimeter-wave frequency range, where larger bandwidth is available at a higher carrier frequency. Observing the Moor’s law, highly scaled complementary metal–oxide–semiconductor (CMOS) technologies provide fast transistors with a high unity power gain frequency which enables operating at millimeter-wave frequency range. CMOS is the compelling choice for digital and signal processing modules which concurrently offers high computation speed, low power consumption, and mass integration at a high manufacturing yield. One of the main shortcomings of the sub-micron CMOS technologies is the low breakdown voltage of the transistors that limits the dynamic range of the radio frequency (RF) power blocks, especially with the power amplifiers. Low voltage swing restricts the achievable output power which translates into low signal to noise ratio and degraded linearity. Extensive research has been done on proposing new design and IC fabrication techniques with the goal of generating higher output power in CMOS technology. The prominent drawbacks of these solutions are an increased die area, higher cost per design, and lower overall efficiency due to lossy passive components. In this dissertation, CMOS compatible metal–semiconductor field-effect transistor (MESFETs) are utilized to put forward a new solution to enhance the power amplifier’s breakdown voltage, gain and maximum output power. Requiring no change to the conventional CMOS process flow, this low cost approach allows direct incorporation of high voltage power MESFETs into silicon. High voltage MESFETs were employed in a cascode structure to push the amplifier’s cutoff frequency and unity power gain frequency to the 5G and K-band frequency range. This dissertation begins with CMOS compatible MESFET modeling and fabrication steps, and culminates in the discussion of amplifier design and optimization methodology, parasitic de-embedding steps, simulation and measurement results, and high resistivity RF substrate characterization.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201