Design of two-stage class AB CMOS buffers: a systematic approach

A systematic approach for the design of two-stage class AB CMOS unity-gain buffers is proposed. It is based on the inclusion of a class AB operation to class A Miller amplifier topologies in unity-gain negative feedback by a simple technique that does not modify quiescent currents, supply requirements, noise performance, or static power. Three design examples are fabricated in a 0.5 μm CMOS process. Measurement results show slew rate improvement factors of approximately 100 for the class AB buffers versus their class A counterparts for the same quiescent power consumption (< 200 μW)

A CMOS Spiking Neuron for Dense Memristor-Synapse Connectivity for Brain-Inspired Computing

Neuromorphic systems that densely integrate CMOS spiking neurons and nano-scale memristor synapses open a new avenue of brain-inspired computing. Existing silicon neurons have molded neural biophysical dynamics but are incompatible with memristor synapses, or used extra training circuitry thus eliminating much of the density advantages gained by using memristors, or were energy inefficient. Here we describe a novel CMOS spiking leaky integrate-and-fire neuron circuit. Building on a reconfigurable architecture with a single opamp, the described neuron accommodates a large number of memristor synapses, and enables online spike timing dependent plasticity (STDP) learning with optimized power consumption. Simulation results of an 180nm CMOS design showed 97% power efficiency metric when realizing STDP learning in 10,000 memristor synapses with a nominal 1M{\Omega} memristance, and only 13{\mu}A current consumption when integrating input spikes. Therefore, the described CMOS neuron contributes a generalized building block for large-scale brain-inspired neuromorphic systems.Comment: This is a preprint of an article accepted for publication in International Joint Conference on Neural Networks (IJCNN) 201

An Ultra Low Power Digital to Analog Converter Optimized for Small Format LCD Applications

Liquid crystal displays (LCDs) for mobile applications present a unique design challenge. These small format displays can be found primarily in cell phones and PDAs which are devices that have particularly stringent power requirements. At the same time, the displays are increasing in resolution with every generation. This is creating demand for new LCD display technologies. The predominant amorphous thin film transistor technology is no longer feasible in the new high resolution small format screens due to the fact that the displays require too many connections to the driver and the aperture ratios do not allow high density displays. New technologies such as low temperature polysilicon (LTPS) displays continue to shrink in size and increase in resolution. LTPS technology enables the display manufacturer to create relatively high quality transistors on the glass. This allows for a display architecture which integrates the gate driver on the glass. Newer LTPS LCDs also enable a high level of multiplexing the sources lines on the glass which allows for a much simpler connection to the display driver chip. The electronic drivers for these display applications must adhere to strict power and area budgets. This work describes a low-power, area efficient, scalable, digital-to-analog conversion (DAC) integrated circuit architecture optimized for driving small format LCDs. The display driver is based on a twelve channel, 9-bit DAC driver. This architecture, suitable for % VGA resolution displays, exhibited a 2 MSPS conversion rate, less than 300 pW power dissipation per channel using a 5 V supply, and a die area of 0.042 mm per DAC. A new performance standard is set for DAC display drivers in joules per bit areal density

Energy-Efficient Amplifiers Based on Quasi-Floating Gate Techniques

Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage, energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example, including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage, ultra-low-power amplifiers can be designed, preserving, at the same time, excellent small-signal and large-signal performance.Agencia Estatal de Investigación PID2019-107258RB-C32Unión Europea PID2019-107258RB-C3

Energy-efficient amplifiers based on quasi-floating gate techniques

Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage ultra low power amplifiers can be designed preserving at the same time excellent small-signal and large-signal performance.This research was funded by AEI/FEDER, grant number PID2019-107258RB-C32

Design of Low Power CMOS Read-Out with TDI Function for Infrared Linear Photodiode Array Detectors

A new low voltage CMOS infrared readout circuit using the buffer-direct injection method is presented. It uses a single supply voltage of 1.8 volts and a bias current of 1uA. The time-delay integration technique is used to increase the signal to noise ratio. A current memory circuit with faulty diode detection is used to remove dark current for background compensation and to disable a photodiode in a cell if detected as faulty. Simulations are shown that verify the circuit that is currently in fabrication in 0.5ym CMOS technology

Homogeneous Spiking Neuromorphic System for Real-World Pattern Recognition

A neuromorphic chip that combines CMOS analog spiking neurons and memristive synapses offers a promising solution to brain-inspired computing, as it can provide massive neural network parallelism and density. Previous hybrid analog CMOS-memristor approaches required extensive CMOS circuitry for training, and thus eliminated most of the density advantages gained by the adoption of memristor synapses. Further, they used different waveforms for pre and post-synaptic spikes that added undesirable circuit overhead. Here we describe a hardware architecture that can feature a large number of memristor synapses to learn real-world patterns. We present a versatile CMOS neuron that combines integrate-and-fire behavior, drives passive memristors and implements competitive learning in a compact circuit module, and enables in-situ plasticity in the memristor synapses. We demonstrate handwritten-digits recognition using the proposed architecture using transistor-level circuit simulations. As the described neuromorphic architecture is homogeneous, it realizes a fundamental building block for large-scale energy-efficient brain-inspired silicon chips that could lead to next-generation cognitive computing.Comment: This is a preprint of an article accepted for publication in IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol 5, no. 2, June 201

Bulk-driven flipped voltage follower

A voltage buffer so-called the bulk-driven flipped voltage follower is presented. This proposal is based on the flipped voltage follower (FVF) technique, but a bulk-driven MOSFET with the replica-biased scheme is utilized for the input device to eliminate the DC level shift. The proposed buffer has been designed and simulated with a 0.35 mum CMOS technology. The input current and capacitance of our proposal are 1.5 pA and 9.3 fF respectively, and with 0.8 V peak-to-peak 500 kHz input, the total harmonic distortion is 0.5% for a 10 pF load. This circuit can operate from a single 1.2 V power supply and consumes only 2.5 muA