FVF-Based Low-Dropout Voltage Regulator with Fast Charging/Discharging Paths for Fast Line and Load Regulation

A new internally compensated low drop-out voltage regulator based on the cascoded flipped voltage follower is presented in this paper. Adaptive biasing current and fast charging/discharging paths have been added to rapidly charge and discharge the parasitic capacitance of the pass transistor gate, thus improving the transient response. The proposed regulator was designed with standard 65-nm CMOS technology. Measurements show load and line regulations of 433.80 μV/mA and 5.61 mV/V, respectively. Furthermore, the output voltage spikes are kept under 76 mV for 0.1 mA to 100 mA load variations and 0.9 V to 1.2 V line variations with rise and fall times of 1 μs. The total current consumption is 17.88 μA (for a 0.9 V supply voltage).Ministerio de Economía y Competitividad TEC2015-71072-C3-3-RConsejería de Economía, Innovación y Ciencia. Junta de Andalucía P12-TIC-186

Super-gain-boosted AB-AB fully differential Miller op-amp with 156dB open-loop gain and 174MV/V MHZ pF/uW figure of merit in 130nm CMOS technology

A fully differential Miller op-amp with a composite input stage using resistive local common-mode feedback and regulated cascode transistors is presented here. High gain pseudo-differential auxiliary amplifiers are used to implement the regulated cascode transistors in order to boost the output impedance of the composite input stage and the open-loop gain of the op-amp. Both input and output stages operate in class AB mode. The proposed op-amp has been simulated in a 130nm commercial CMOS process technology. It operates from a 1.2V supply and has a close to rail-to-rail differential output swing. It has 156dB DC open-loop gain and 63MHz gain-bandwidth product with a 30pF capacitive load. The op-amp has a DC open-loop gain figure of merit FOMAOLDC of 174 (MV/V) MHz pF/uW and large-signal figure of merit FOMLS of 3(V/us) pF/uW.This work was supported in part by the Spanish Government Agencia Estatal de Investigación (AEI) under Grant TEC2016-80396-C2, in part by the Consejería de Economía y Conocimiento of Junta de Andalucía under Grant P18-FR-4317 (both projects received support from the Fondo Europeo de Desarrollo Regional (FEDER)), and in part by the Consejo Nacional de Ciencia y Tecnologia (CONACyT) under Grant A1-S-43214

Super-Gain-Boosted AB-AB Fully Differential Miller Op-Amp With 156dB Open-Loop Gain and 174MV/V MHZ pF/µW Figure of Merit in 130nm CMOS Technology

Article number 9400400A fully differential Miller op-amp with a composite input stage using resistive local common-mode feedback and regulated cascode transistors is presented here. High gain pseudo-differential auxiliary amplifiers are used to implement the regulated cascode transistors in order to boost the output impedance of the composite input stage and the open-loop gain of the op-amp. Both input and output stages operate in class AB mode. The proposed op-amp has been simulated in a 130nm commercial CMOS process technology. It operates from a 1.2V supply and has a close to rail-to-rail differential output swing. It has 156dB DC open-loop gain and 63MHz gain-bandwidth product with a 30pF capacitive load. The op-amp has a DC open-loop gain figure of merit FOMAOLDC of 174 (MV/V) MHz pF/µW and large-signal figure of merit FOMLS of 3(V/µs) pF/µW.Consejería de Economía y Conocimiento of Junta de Andalucía P18-FR-4317Consejo Nacional de Ciencia y Tecnología (España) A1-S-43214Agencia Estatal de Investigación TEC2016-80396-C

Exploiting the bulk-driven approach in CMOS analogue amplifier design

This thesis presents a collection of new novel techniques using the bulk-driven approach, which can lead to performance enhancement in the field of CMOS analogue amplifier design under the very low-supply voltage constraints. In this thesis, three application areas of the bulk-driven approach are focused – at the input-stage of differential pairs, at the source followers, and at the cascode devices. For the input stage of differential pairs, this thesis proposes two new novel circuit design techniques. One of them utilises the concept of the replica-biased scheme in order to solve the non-linearity and latch-up issues, which are the potential problems that come along with the bulk-driven approach. The other proposed circuit design technique utilises the flipped voltage scheme and the Quasi-Floating Gate technique in order to achieve low-power high-speed performances, and furthermore the reversed-biased diode concept to overcome the issue of degraded input impedance characteristics that come along with the bulk-driven approach. Applying the bulk-driven approach in source followers is a new type of circuit blocks in CMOS analogue field, in which to the author’s best knowledge has not been proposed at any literatures in the past. This thesis presents the bulk-driven version of the flipped voltage followers and super source followers, which can lead to eliminating the DC level shift. Furthermore, a technique for programming the DC level shift less than the threshold voltage of a MOSFET, which cannot be achieved by conventional types of source followers, is presented. The effectiveness of the cascode device using the bulk-driven approach is validated by implementing it in a complete schematics design of a fully differential bulk-driven operational transcoductance amplifier (OTA). This proposal leads to solving the lowtranconductance problem of a bulk-driven differential pair, and in effect the open loop gain of the OTA exceeds 60dB using a 0.35μm CMOS technology. The final part of this thesis provides the study result of the input capacitance of a bulk-driven buffer. To verify the use of the BSIM3 MOSFET model in the simulation for predicting the input capacitance, the measurement data of the fabricated device are compared with the postlayout simulation results

Exploiting the bulk-driven approach in CMOS analogue amplifier design

This thesis presents a collection of new novel techniques using the bulk-driven approach, which can lead to performance enhancement in the field of CMOS analogue amplifier design under the very low-supply voltage constraints. In this thesis, three application areas of the bulk-driven approach are focused – at the input-stage of differential pairs, at the source followers, and at the cascode devices. For the input stage of differential pairs, this thesis proposes two new novel circuit design techniques. One of them utilises the concept of the replica-biased scheme in order to solve the non-linearity and latch-up issues, which are the potential problems that come along with the bulk-driven approach. The other proposed circuit design technique utilises the flipped voltage scheme and the Quasi-Floating Gate technique in order to achieve low-power high-speed performances, and furthermore the reversed-biased diode concept to overcome the issue of degraded input impedance characteristics that come along with the bulk-driven approach. Applying the bulk-driven approach in source followers is a new type of circuit blocks in CMOS analogue field, in which to the author’s best knowledge has not been proposed at any literatures in the past. This thesis presents the bulk-driven version of the flipped voltage followers and super source followers, which can lead to eliminating the DC level shift. Furthermore, a technique for programming the DC level shift less than the threshold voltage of a MOSFET, which cannot be achieved by conventional types of source followers, is presented. The effectiveness of the cascode device using the bulk-driven approach is validated by implementing it in a complete schematics design of a fully differential bulk-driven operational transcoductance amplifier (OTA). This proposal leads to solving the lowtranconductance problem of a bulk-driven differential pair, and in effect the open loop gain of the OTA exceeds 60dB using a 0.35μm CMOS technology. The final part of this thesis provides the study result of the input capacitance of a bulk-driven buffer. To verify the use of the BSIM3 MOSFET model in the simulation for predicting the input capacitance, the measurement data of the fabricated device are compared with the postlayout simulation results

Performance analysis and design optimization of parallel-type slew-rate enhancers for switched-capacitor applications

The design of single-stage OTAs for accurate switched-capacitor circuits involves challenging trade-offs between speed and power consumption. The addition of a Slew-Rate Enhancer (SRE) circuit placed in parallel to the main OTA (parallel-type SRE) constitutes a viable solution to reduce the settling time, at the cost of low-power overhead and no modifications of the main OTA. In this work, a practical analytical model has been developed to predict the settling time reduction achievable with OTA/SRE systems and to show the effect of the various design parameters. The model has been applied to a real case, consisting of the combination of a standard folded-cascode OTA with an existing parallel-type SRE solution. Simulations performed on a circuit designed with a commercial 180-nm CMOS technology revealed that the actual settling-time reduction was significantly smaller than predicted by the model. This discrepancy was explained by taking into account the internal delays of the SRE, which is exacerbated when a high output current gain is combined with high power efficiency. To overcome this problem, we propose a simple modification of the original SRE circuit, consisting in the addition of a single capacitor which temporarily boosts the OTA/SRE currents reducing the internal turn-on delay. With the proposed approach a settling-time reduction of 57% has been demonstrated with an SRE that introduces only a 10% power-overhead with respect of the single OTA solution. The robustness of the results have been validated by means of Monte-Carlo simulations

High Slew-Rate Adaptive Biasing Hybrid Envelope Tracking Supply Modulator for LTE Applications

abstract: As wireless communication enters smartphone era, more complicated communication technologies are being used to transmit higher data rate. Power amplifier (PA) has to work in back-off region, while this inevitably reduces battery life for cellphones. Various techniques have been reported to increase PA efficiency, such as envelope elimination and restoration (EER) and envelope tracking (ET). However, state of the art ET supply modulators failed to address high efficiency, high slew rate, and accurate tracking concurrently. In this dissertation, a linear-switch mode hybrid ET supply modulator utilizing adaptive biasing and gain enhanced current mirror operational transconductance amplifier (OTA) with class-AB output stage in parallel with a switching regulator is presented. In comparison to a conventional OTA design with similar quiescent current consumption, proposed approach improves positive and negative slew rate from 50 V/µs to 93.4 V/µs and -87 V/µs to -152.5 V/µs respectively, dc gain from 45 dB to 67 dB while consuming same amount of quiescent current. The proposed hybrid supply modulator achieves 83% peak efficiency, power added efficiency (PAE) of 42.3% at 26.2 dBm for a 10 MHz 7.24 dB peak-to-average power ratio (PAPR) LTE signal and improves PAE by 8% at 6 dB back off from 26.2 dBm power amplifier (PA) output power with respect to fixed supply. With a 10 MHz 7.24 dB PAPR QPSK LTE signal the ET PA system achieves adjacent channel leakage ratio (ACLR) of -37.7 dBc and error vector magnitude (EVM) of 4.5% at 26.2 dBm PA output power, while with a 10 MHz 8.15 dB PAPR 64QAM LTE signal the ET PA system achieves ACLR of -35.6 dBc and EVM of 6% at 26 dBm PA output power without digital pre-distortion (DPD). The proposed supply modulator core circuit occupies 1.1 mm2 die area, and is fabricated in a 0.18 µm CMOS technology.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

A 12b 250 MS/s Pipelined ADC With Virtual Ground Reference Buffers

The virtual ground reference buffer (VGRB) technique is introduced as a means to improve the performance of switched-capacitor circuits. The technique enhances the performance by improving the feedback factor of the op-amp without affecting the signal gain. The bootstrapping action of the level-shifting buffers relaxes key op-amp performance requirements including unity-gain bandwidth, noise, open-loop gain and offset compared with conventional circuits. This reduces the design complexity and the power consumption of op-amp based circuits. Based on this technique, a 12 b pipelined ADC is implemented in 65 nm CMOS that achieves 67.0 dB SNDR at 250 MS/s and consumes 49.7 mW of power from a 1.2 V power supply