A 0.35 μm CMOS 17-bit@40-kS/s cascade 2-1 ΣΔ modulator with programmable gain and programmable chopper stabilization

This paper describes a 0.35μm CMOS chopper-stabilized Switched-Capacitor 2-1 cascade ΣDelta; modulator for automotive sensor interfaces. For a better fitting to the characteristics of different sensor outputs, the modulator includes a programmable set of gains (x0.5, x1, x2, and x4) and a programmable set of chopper frequencies (fs/16, fs/8, fs/4 and fs/2). It has also been designed to operate within the restrictive environmental conditions of automotive electronics (-40°C, 175°C). The modulator architecture has been selected after an exhaustive comparison among multiple ΣΔM topologies in terms of resolution, speed and power dissipation. The design of the modulator building blocks is based upon a top-down CAD methodology which combines simulation and statistical optimization at different levels of the modulator hierarchy. The circuit is clocked at 5.12MHz and consumes, all together, 14.7mW from a single 3.3-V supply. Experimental measurements result in 99.77dB of Dynamic Range (DR), which combined with the gain programmability leads to an overall DR of 112dB. This puts the presented design beyond the state-of-the-art according with the existing bibliography

Integrated chaos generators

This paper surveys the different design issues, from mathematical model to silicon, involved on the design of integrated circuits for the generation of chaotic behavior.Comisión Interministerial de Ciencia y Tecnología 1FD97-1611(TIC)European Commission ESPRIT 3110

Investigation of charge coupled device correlation techniques

Analog Charge Transfer Devices (CTD's) offer unique advantages to signal processing systems, which often have large development costs, making it desirable to define those devices which can be developed for general system's use. Such devices are best identified and developed early to give system's designers some interchangeable subsystem blocks, not requiring additional individual development for each new signal processing system. The objective of this work is to describe a discrete analog signal processing device with a reasonably broad system use and to implement its design, fabrication, and testing

Solid State Television Camera (CID)

The design, development and test are described of a charge injection device (CID) camera using a 244x248 element array. A number of video signal processing functions are included which maximize the output video dynamic range while retaining the inherently good resolution response of the CID. Some of the unique features of the camera are: low light level performance, high S/N ratio, antiblooming, geometric distortion, sequential scanning and AGC

Discrete-Time Mixing Receiver Architecture for RF-Sampling Software-Defined Radio

A discrete-time (DT) mixing architecture for RF-sampling receivers is presented. This architecture makes RF sampling more suitable for software-defined radio (SDR) as it achieves wideband quadrature demodulation and wideband harmonic rejection. The paper consists of two parts. In the first part, different downconversion techniques are classified and compared, leading to the definition of a DT mixing concept. The suitability of CT-mixing and RF-sampling receivers to SDR is also discussed. In the second part, we elaborate the DT-mixing architecture, which can be realized by de-multiplexing. Simulation shows a wideband 90° phase shift between I and Q outputs without systematic channel bandwidth limitation. Oversampling and harmonic rejection relaxes RF pre-filtering and reduces noise and interference folding. A proof-of-concept DT-mixing downconverter has been built in 65 nm CMOS, for 0.2 to 0.9 GHz RF band employing 8-times oversampling. It can reject 2nd to 6th harmonics by 40 dB typically and without systematic channel bandwidth limitation. Without an LNA, it achieves a gain of -0.5 to 2.5 dB, a DSB noise figure of 18 to 20 dB, an IIP3 = +10 dBm, and an IIP2 = +53 dBm, while consuming less than 19 mW including multiphase clock generation

The impact of CMOS scaling projected on a 6b full-Nyquist non-calibrated flash ADC

A 6-bit 1.2 Gs/s non-calibrated flash ADC in a standard 45nm CMOS process, that achieves 0.45pJ/conv-step at full Nyquist bandwidth, is presented. Power efficient operation is achieved by a full optimization of amplifier blocks, and by innovations in the comparator and encoding stage. The performance of a non-calibrated flash ADC is directly related to device properties; a scaling analysis of our ADC in and across CMOS technologies gives insight into the excellent usability of 45nm technology for AD converter design

Design of a low power switched-capacitor pipeline analog-to-digital converter

An Analog to Digital Converter (ADC) is a circuit which converts an analog signal into digital signal. Real world is analog, and the data processed by the computer or by other signal processing systems is digital. Therefore, the need for ADCs is obvious. In this thesis, several novel designs used to improve ADCs operation speed and reduce ADC power consumption are proposed. First, a high speed switched source follower (SSF) sample and hold amplifier without feedthrough penalty is implemented and simulated. The SSF sample and hold amplifier can achieve 6 Bit resolution with sampling rate at 10Gs/s. Second, a novel rail-to-rail time domain comparator used in successive approximation register ADC (SAR ADC) is implemented and simulated. The simulation results show that the proposed SAR ADC can only consume 1.3 muW with a 0.7 V power supply. Finally, a prototype pipeline ADC is implemented and fabricated in an IBM 90nm CMOS process. The proposed design is validated using measurement on a fabricated silicon IC, and the proposed 10-bit ADC achieves a peak signal-to-noise- and-distortion-ratio (SNDR) of 47 dB. This SNDR translates to a figure of merit (FOM) of 2.6N/conversion-step with a 1.2 V power supply

A 0.45pJ/conv-step 1.2Gs/s 6b full-Nyquist non-calibrated flash ADC in 45nm CMOS and its scaling behavior

A 6-bit 1.2 Gs/s non-calibrated flash ADC in a standard 45nm CMOS process, that achieves 0.45pJ/conv-step at full Nyquist bandwidth, is presented. Power efficient operation is achieved by a full optimization of amplifier blocks, and by innovations in the comparator and encoding stage. The performance of a non-calibrated flash ADC is directly related to device properties;\ud a scaling analysis of our ADC in and across CMOS technologies gives insight into the excellent usability of 45nm technology for AD converter design