Integrated circuit & system design for concurrent amperometric and potentiometric wireless electrochemical sensing

Complementary Metal-Oxide-Semiconductor (CMOS) biosensor platforms have steadily grown in healthcare and commerial applications. This technology has shown potential in the field of commercial wearable technology, where CMOS sensors aid the development of miniaturised sensors for an improved cost of production and response time. The possibility of utilising wireless power and data transmission techniques for CMOS also allows for the monolithic integration of the communication, power and sensing onto a single chip, which greatly simplifies the post-processing and improves the efficiency of data collection. The ability to concurrently utilise potentiometry and amperometry as an electrochemical technique is explored in this thesis. Potentiometry and amperometry are two of the most common transduction mechanisms for electrochemistry, with their own advantages and disadvantages. Concurrently applying both techniques will allow for real-time calibration of background pH and for improved accuracy of readings. To date, developing circuits for concurrently sensing potentiometry and amperometry has not been explored in the literature. This thesis investigates the possibility of utilising CMOS sensors for wireless potentiometric and amperometric electrochemical sensing. To start with, a review of potentiometry and amperometry is evaluated to understand the key factors behind their operation. A new configuration is proposed whereby the reference electrode for both electrochemistry techniques are shared. This configuration is then compared to both the original configurations to determine any differences in the sensing accuracy through a novel experiment that utilises hydrogen peroxide as a measurement analyte. The feasibility of the configuration with the shared reference electrode is proven and utilised as the basis of the electrochemical configuration for the front end circuits. A unique front-end circuit named DAPPER is developed for the shared reference electrode topology. A review of existing architectures for potentiometry and amperometry is evaluated, with a specific focus on low power consumption for wireless applications. In addition, both the electrochemical sensing outputs are mixed into a single output data channel for use with a near-field communication (NFC). This mixing technique is also further analysed in this thesis to understand the errors arising due to various factors. The system is fabricated on TSMC 180nm technology and consumes 28µW. It measures a linear input current range from 250pA - 0.1µW, and an input voltage range of 0.4V - 1V. This circuit is tested and verified for both electrical and electrochemical tests to showcase its feasibility for concurrent measurements. This thesis then provides the integration of wireless blocks into the system for wireless powering and data transmission. This is done through the design of a circuit named SPACEMAN that consists of the concurrent sensing front-end, wireless power blocks, data transmission, as well as a state machine that allows for the circuit to switch between modes: potentiometry only, amperometry only, concurrent sensing and none. The states are switched through re-booting the circuit. The core size of the electronics is 0.41mm² without the coil. The circuit’s wireless powering and data transmission is tested and verified through the use of an external transmitter and a connected printed circuit board (PCB) coil. Finally, the future direction for ongoing work to proceed towards a fully monolithic electrochemical technique is discussed through the next development of a fully integrated coil-on-CMOS system, on-chip electrodes with the electroplating and microfludics, the development of an external transmitter for powering the device and a test platform. The contributions of this thesis aim to formulate a use for wireless electrochemical sensors capable of concurrent measurements for use in wearable devices.Open Acces

A fully-integrated 180 nm CMOS 1.2 V low-dropout regulator for low-power portable applications

This paper presents the design and postlayout simulation results of a capacitor-less low dropout (LDO) regulator fully integrated in a low-cost standard 180 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology which regulates the output voltage at 1.2 V from a 3.3 to 1.3 V battery over a -40 to 120 degrees C temperature range. To meet with the constraints of system-on-chip (SoC) battery-operated devices, ultralow power (I-q = 8.6 mu A) and minimum area consumption (0.109 mm(2)) are maintained, including a reference voltage V-ref = 0.4 V. It uses a high-gain dynamically biased folded-based error amplifier topology optimized for low-voltage operation that achieves an enhanced regulation-fast transient performance trade-off

High Performance Power Management Integrated Circuits for Portable Devices

abstract: Portable devices often require multiple power management IC (PMIC) to power different sub-modules, Li-ion batteries are well suited for portable devices because of its small size, high energy density and long life cycle. Since Li-ion battery is the major power source for portable device, fast and high-efficiency battery charging solution has become a major requirement in portable device application. In the first part of dissertation, a high performance Li-ion switching battery charger is proposed. Cascaded two loop (CTL) control architecture is used for seamless CC-CV transition, time based technique is utilized to minimize controller area and power consumption. Time domain controller is implemented by using voltage controlled oscillator (VCO) and voltage controlled delay line (VCDL). Several efficiency improvement techniques such as segmented power-FET, quasi-zero voltage switching (QZVS) and switching frequency reduction are proposed. The proposed switching battery charger is able to provide maximum 2 A charging current and has an peak efficiency of 93.3%. By configure the charger as boost converter, the charger is able to provide maximum 1.5 A charging current while achieving 96.3% peak efficiency. The second part of dissertation presents a digital low dropout regulator (DLDO) for system on a chip (SoC) in portable devices application. The proposed DLDO achieve fast transient settling time, lower undershoot/overshoot and higher PSR performance compared to state of the art. By having a good PSR performance, the proposed DLDO is able to power mixed signal load. To achieve a fast load transient response, a load transient detector (LTD) enables boost mode operation of the digital PI controller. The boost mode operation achieves sub microsecond settling time, and reduces the settling time by 50% to 250 ns, undershoot/overshoot by 35% to 250 mV and 17% to 125 mV without compromising the system stability.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Ultra-low Quiescent Current NMOS Low Dropout Regulator With Fast Transient response for Always-On Internet-of-Things Applications

abstract: The increased adoption of Internet-of-Things (IoT) for various applications like smart home, industrial automation, connected vehicles, medical instrumentation, etc. has resulted in a large scale distributed network of sensors, accompanied by their power supply regulator modules, control and data transfer circuitry. Depending on the application, the sensor location can be virtually anywhere and therefore they are typically powered by a localized battery. To ensure long battery-life without replacement, the power consumption of the sensor nodes, the supply regulator and, control and data transmission unit, needs to be very low. Reduction in power consumption in the sensor, control and data transmission is typically done by duty-cycled operation such that they are on periodically only for short bursts of time or turn on only based on a trigger event and are otherwise powered down. These approaches reduce their power consumption significantly and therefore the overall system power is dominated by the consumption in the always-on supply regulator. Besides having low power consumption, supply regulators for such IoT systems also need to have fast transient response to load current changes during a duty-cycled operation. Supply regulation using low quiescent current low dropout (LDO) regulators helps in extending the battery life of such power aware always-on applications with very long standby time. To serve as a supply regulator for such applications, a 1.24 µA quiescent current NMOS low dropout (LDO) is presented in this dissertation. This LDO uses a hybrid bias current generator (HBCG) to boost its bias current and improve the transient response. A scalable bias-current error amplifier with an on-demand buffer drives the NMOS pass device. The error amplifier is powered with an integrated dynamic frequency charge pump to ensure low dropout voltage. A low-power relaxation oscillator (LPRO) generates the charge pump clocks. Switched-capacitor pole tracking (SCPT) compensation scheme is proposed to ensure stability up to maximum load current of 150 mA for a low-ESR output capacitor range of 1 - 47µF. Designed in a 0.25 µm CMOS process, the LDO has an output voltage range of 1V – 3V, a dropout voltage of 240 mV, and a core area of 0.11 mm2.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

CMOS Design of Reconfigurable SoC Systems for Impedance Sensor Devices

La rápida evolución en el campo de los sensores inteligentes, junto con los avances en las tecnologías de la computación y la comunicación, está revolucionando la forma en que recopilamos y analizamos datos del mundo físico para tomar decisiones, facilitando nuevas soluciones que desempeñan tareas que antes eran inconcebibles de lograr.La inclusión en un mismo dado de silicio de todos los elementos necesarios para un proceso de monitorización y actuación ha sido posible gracias a los avances en micro (y nano) electrónica. Al mismo tiempo, la evolución de las tecnologías de procesamiento y micromecanizado de superficies de silicio y otros materiales complementarios ha dado lugar al desarrollo de sensores integrados compatibles con CMOS, lo que permite la implementación de matrices de sensores de alta densidad. Así, la combinación de un sistema de adquisición basado en sensores on-Chip, junto con un microprocesador como núcleo digital donde se puede ejecutar la digitalización de señales, el procesamiento y la comunicación de datos proporciona características adicionales como reducción del coste, compacidad, portabilidad, alimentación por batería, facilidad de uso e intercambio inteligente de datos, aumentando su potencial número de aplicaciones.Esta tesis pretende profundizar en el diseño de un sistema portátil de medición de espectroscopía de impedancia de baja potencia operado por batería, basado en tecnologías microelectrónicas CMOS, que pueda integrarse con el sensor, proporcionando una implementación paralelizable sin incrementar significativamente el tamaño o el consumo, pero manteniendo las principales características de fiabilidad y sensibilidad de un instrumento de laboratorio. Esto requiere el diseño tanto de la etapa de gestión de la energía como de las diferentes celdas que conforman la interfaz, que habrán de satisfacer los requisitos de un alto rendimiento a la par que las exigentes restricciones de tamaño mínimo y bajo consumo requeridas en la monitorización portátil, características que son aún más críticas al considerar la tendencia actual hacia matrices de sensores.A nivel de celdas, se proponen diferentes circuitos en un proceso CMOS de 180 nm: un regulador de baja caída de voltaje como unidad de gestión de energía, que proporciona una alimentación de 1.8 V estable, de bajo ruido, precisa e independiente de la carga para todo el sistema; amplificadores de instrumentación con una aproximación completamente diferencial, que incluyen una etapa de entrada de voltaje/corriente configurable, ganancia programable y ancho de banda ajustable, tanto en la frecuencia de corte baja como alta; un multiplicador para conformar la demodulación dual, que está embebido en el amplificador para optimizar consumo y área; y filtros pasa baja totalmente integrados, que actúan como extractores de magnitud de DC, con frecuencias de corte ajustables desde sub-Hz hasta cientos de Hz.<br /

Design of a Programmable Passive SoC for Biomedical Applications Using RFID ISO 15693/NFC5 Interface

Low power, low cost inductively powered passive biotelemetry system involving fully customized RFID/NFC interface base SoC has gained popularity in the last decades. However, most of the SoCs developed are application specific and lacks either on-chip computational or sensor readout capability. In this paper, we present design details of a programmable passive SoC in compliance with ISO 15693/NFC5 standard for biomedical applications. The integrated system consists of a 32-bit microcontroller, a sensor readout circuit, a 12-bit SAR type ADC, 16 kB RAM, 16 kB ROM and other digital peripherals. The design is implemented in a 0.18 μ m CMOS technology and used a die area of 1.52 mm × 3.24 mm. The simulated maximum power consumption of the analog block is 592 μ W. The number of external components required by the SoC is limited to an external memory device, sensors, antenna and some passive components. The external memory device contains the application specific firmware. Based on the application, the firmware can be modified accordingly. The SoC design is suitable for medical implants to measure physiological parameters like temperature, pressure or ECG. As an application example, the authors have proposed a bioimplant to measure arterial blood pressure for patients suffering from Peripheral Artery Disease (PAD)

Graphene field effect transistor based pressure sensors for tactile sensing applications

The development of electronic skin emulating human skin's functionality is a growing area of interest due to its prospect in autonomous and interactive robots, prosthesis and wearable health monitoring devices. In an effort to mimic human skin a number of sensors for the detection of various stimuli have been developed including pressure, strain and thermal sensors. Amongst them, a significant effort has been focused on the development of novel pressure sensors due to their potential in the aforementioned applications. A number of strategies have been adopted for the development of pressure sensors and in particular, there has been a growing interest in the development of field effect transistor (FET) based pressure sensors. This is due to the capability to develop large area high spatial resolution active matrix pressure sensor array. In recent times, there has been a growing demand for the development of flexible pressure sensors due to emerging applications such as smart prosthesis, interactive robots, and wearable electronics. The use of conventional material like Si for flexible electronic applications are limited owing to their rigid and brittle nature. This has led to the investigation of various novel materials like organic semiconductors, carbon nanotube, inorganic semiconductor nanowires, and graphene. Amongst them, graphene is an attractive choice owing to its intrinsic material properties such as its electronic and mechanical properties. Further, the complementary metal oxide semiconductor (CMOS) compatibility and ability to grow high-quality graphene over a large area, and its low optical absorption are some of the other attractive features for the development of large area transparent electronic applications. The high mobility of graphene would enable the development of low voltage devices attractive for flexible electronics applications. This thesis presents work on the development of graphene field effect transistor (GFET) based pressure sensors for tactile sensing applications. The developed sensor comprises of two main components: a top-gate GFET and a piezoelectric transducer layer. A commercially available chemical vapour deposition grown monolayer graphene on Cu foil (from Graphenea) was used as the channel material of the transistor. A high-k Al2O3 deposited by atomic layer deposition technique was employed as the top-gate dielectric. In particular, care was taken to ensure a low temperature CMOS compatible process was adopted for the development of GFET. This ensured that the developed fabrication process could be transferred directly for the development of flexible devices. The development of the transfer process, the impact of different polymers (used as supporting layer during the transfer process) on graphene and the optimisation of dielectric deposition process are discussed in the thesis. The piezoelectric transducer layer is another vital component of the developed pressure sensor. In this respect, two piezoelectric materials, lead zirconate titanate (PZT) and aluminium nitride (AlN), have been investigated as the transducer layer. The pressure sensors were characterised with the piezoelectric transducer layer in an extended-gate configuration with GFET. PZT based pressure sensors exhibited a pressure sensitivity of 4.55E-3/kPa for a pressure range between 0 - 94.18 kPa. Though PZT is a better piezoelectric material than AlN, CMOS process incompatibility, non-biocompatibility and high processing temperature often associated with PZT limit its use in the development of flexible electronics especially for wearable applications. Therefore, AlN deposited by low temperature radio frequency magnetron sputtering has been explored as an alternate piezoelectric transducer layer for pressure sensing applications. The use of AlN also evades the need for the high voltage poling process often employed to enhance the piezoelectric property of the material. The AlN deposited via an optimised RF sputtering process reported in the thesis resulted in film with a piezoelectric constant of 5.9 pC/N. Similar to PZT , AlN was also characterised in an extended gate configuration and exhibited a sensitivity of 7.18 E-3 /kPa for a pressure range of 0-9.74 kPa. In an attempt to improve the spatial sensor resolution of sensor and to improve the signal to noise ratio a piezoelectric layer integrated within the top gate dielectric stack was investigated. In this regard,a flexible GFET with a piezoelectric layer integrated with the top-gate dielectric film was developed. The top gate dielectric stack comprise a 15 nm Al2O3(deposited by ALD)/ 90 nm AlN (deposited by RF sputtering). The developed device exhibited typical GFET electrical characteristics. The electron and hole mobility of the developed devices were 1612 cm2/V.s and 1568 cm2/V.s respectively. In addition, the device also displayed a stable electrical response under mechanical bending condition, thereby demonstrating its potential in the development of flexible electronics

Current Feedback-Based High Load Current Low Drop-Out Voltage Regulator in 65-nm CMOS Technology

The motivation for this paper was to design a current feedback-based high load current, low drop-out (LDO) voltage regulator. A bandgap voltage reference (BGR) was also designed in conjunction with the LDO to simulate realistic environments. The schematic was designed with Cadence Virtuoso Schematic XL, using the Taiwan Semiconductor Manufacturing Company (TSMC) 65-nm CMOS library, used for Internet of Things (IoT) System on Chip (SoC) applications. The proposed capacitor-less LDO with BGR provided an average temperature coefficient (TC) of 13.34 ppm/℃ within the range of -40 to 125 ℃. This was in accordance with military standards to gain a higher stability and power supply rejection ratio (PSRR). The proposed capacitor-less LDO also achieved a 200 mA load current with an error percentage of 0.246% and a -21.47 dB PSRR at 100 KHz with a current based structure. This thesis concluded with the application of capacitor-less LDO in medical IoT devices, followed by the future of medical device development

Ultra-Low Power Transmitter and Power Management for Internet-of-Things Devices

Two of the most critical components in an Internet-of-Things (IoT) sensing and transmitting node are the power management unit (PMU) and the wireless transmitter (Tx). The desire for longer intervals between battery replacements or a completely self-contained, battery-less operation via energy harvesting transducers and circuits in IoT nodes demands highly efficient integrated circuits. This dissertation addresses the challenge of designing and implementing power management and Tx circuits with ultra-low power consumption to enable such efficient operation. The first part of the dissertation focuses on the study and design of power management circuits for IoT nodes. This opening portion elaborates on two different areas of the power management field: Firstly, a low-complexity, SPICE-based model for general low dropout (LDO) regulators is demonstrated. The model aims to reduce the stress and computation times in the final stages of simulation and verification of Systems-on-Chip (SoC), including IoT nodes, that employ large numbers of LDOs. Secondly, the implementation of an efficient PMU for an energy harvesting system based on a thermoelectric generator transducer is discussed. The PMU includes a first-in-its-class LDO with programmable supply noise rejection for localized improvement in the suppression. The second part of the dissertation addresses the challenge of designing an ultra- low power wireless FSK Tx in the 900 MHz ISM band. To reduce the power consumption and boost the Tx energy efficiency, a novel delay cell exploiting current reuse is used in a ring-oscillator employed as the local oscillator generator scheme. In combination with an edge-combiner PA, the Tx showed a measured energy efficiency of 0.2 nJ/bit and a normalized energy efficiency of 3.1 nJ/(bit∙mW) when operating at output power levels up to -10 dBm and data rates of 3 Mbps. To close this dissertation, the implementation of a supply-noise tolerant BiCMOS ring-oscillator is discussed. The combination of a passive, high-pass feedforward path from the supply to critical nodes in the selected delay cell and a low cost LDO allow the oscillator to exhibit power supply noise rejection levels better than –33 dB in experimental results

Doctor of Philosophy

dissertationSince the late 1950s, scientists have been working toward realizing implantable devices that would directly monitor or even control the human body's internal activities. Sophisticated microsystems are used to improve our understanding of internal biological processes in animals and humans. The diversity of biomedical research dictates that microsystems must be developed and customized specifically for each new application. For advanced long-term experiments, a custom designed system-on-chip (SoC) is usually necessary to meet desired specifications. Custom SoCs, however, are often prohibitively expensive, preventing many new ideas from being explored. In this work, we have identified a set of sensors that are frequently used in biomedical research and developed a single-chip integrated microsystem that offers the most commonly used sensor interfaces, high computational power, and which requires minimum external components to operate. Included peripherals can also drive chemical reactions by setting the appropriate voltages or currents across electrodes. The SoC is highly modular and well suited for prototyping in and ex vivo experimental devices. The system runs from a primary or secondary battery that can be recharged via two inductively coupled coils. The SoC includes a 16-bit microprocessor with 32 kB of on chip SRAM. The digital core consumes 350 μW at 10 MHz and is capable of running at frequencies up to 200 MHz. The integrated microsystem has been fabricated in a 65 nm CMOS technology and the silicon has been fully tested. Integrated peripherals include two sigma-delta analog-to-digital converters, two 10-bit digital-to-analog converters, and a sleep mode timer. The system also includes a wireless ultra-wideband (UWB) transmitter. The fullydigital transmitter implementation occupies 68 x 68 μm2 of silicon area, consumes 0.72 μW static power, and achieves an energy efficiency of 19 pJ/pulse at 200 MHz pulse repetition frequency. An investigation of the suitability of the UWB technology for neural recording systems is also presented. Experimental data capturing the UWB signal transmission through an animal head are presented and a statistical model for large-scale signal fading is developed