This paper presents the design and postlayout simulation results of a capacitor-less low dropout (LDO) regulator fully integrated in a low-cost standard 180 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology which regulates the output voltage at 1.2 V from a 3.3 to 1.3 V battery over a -40 to 120 degrees C temperature range. To meet with the constraints of system-on-chip (SoC) battery-operated devices, ultralow power (I-q = 8.6 mu A) and minimum area consumption (0.109 mm(2)) are maintained, including a reference voltage V-ref = 0.4 V. It uses a high-gain dynamically biased folded-based error amplifier topology optimized for low-voltage operation that achieves an enhanced regulation-fast transient performance trade-off
